HVL900-16IO1 [ETC]
THYRISTOR MODULE|AC SWITCH|1.6KV V(RRM) ; 晶闸管模块|交流开关| 1.6KV V（ RRM ）\n
| 型号： | HVL900-16IO1 |
| 厂家： | 
ETC |
| 描述： | THYRISTOR MODULE|AC SWITCH|1.6KV V(RRM)
|
| 文件： | 总3页 (文件大小：160K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HVL 900
IRMS = 900 A
VRRM = 1200-1800 V
AC Controller
with Isolated Water Flow
Preliminary data
1
VRSM
VDSM
VRRM
VDRM
Type
7
6
V
V
5
4
1300
1500
1700
1900
1200
1400
1600
1800
HVL 900 - 12io1
HVL 900 - 14io1
HVL 900 - 16io1
HVL 900 - 18io1
2/3
Symbol
IRMS
Test Conditions
TWater = 17°C; watervolume = 4 l/min
Maximum Ratings
Features
●
900
A
Isolation between water and electrical
connections with Direct copper
bonded Al2O3-ceramic
Planar passivated chips
Isolation voltage 3600 V~
Keyed gate/cathode twin pins
ITSM, IFSM
TVJ = 45°C;
VR = 0
t = 10 ms (50 Hz)
t = 8.3 ms (60 Hz)
9200
10100
A
A
●
●
●
TVJ = TVJM
VR = 0
t = 10 ms (50 Hz)
t = 8.3 ms (60 Hz)
8000
8800
A
A
I2t
TVJ = 45°C
VR = 0
t = 10 ms (50 Hz)
t = 8.3 ms (60 Hz)
423 000
423 000
A2s
A2s
Applications
●
Large resistance welding equipment
A2s
A2s
●
TVJ = TVJM
VR = 0
t = 10 ms (50 Hz)
t = 8.3 ms (60 Hz)
320 000
321 000
Large electroplating equipment
(di/dt)cr
TVJ = TVJM
repetitive, IT = 960 A
100
A/ms
f =50 Hz, tP = 200 ms
VD = 2/3 VDRM
IG = 1 A,
diG/dt = 1 A/ms
(dv/dt)cr
PGM
TVJ = TVJM; VDR = 2/3 VDRM
RGK = ¥; method 1 (linear voltage rise)
1000
120
V/ms
TVJ = TVJM
IT = ITAVM
tP = 30 ms
tP = 500 ms
W
60
20
10
W
W
V
PGAV
VRGM
TVJ
TVJM
Tstg
-40...+140
140
-40...+125
°C
°C
°C
VISOL
50/60 Hz, RMS t = 1 min
IISOL £ 1 mA t = 1 s
Typical including screws
3000
3600
V~
V~
Weight
1300
g
Data according to IEC 60747 refer to a single thyristor unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions
© 2000 IXYS All rights reserved
1 - 3
HVL 900
Symbol
IRRM, IDRM
VT, VF
Test Conditions
Characteristic Values
10
V
1: IGT, TVJ = 140 C
2: IGT, TVJ 25 C
TVJ = TVJM; VR = VRRM; VD = VDRM
IT, IF = 600 A; TVJ = 25°C
For power-loss calculations only
40 mA
=
3: IGT, TVJ = -40 C
1.32
V
VG
VT0
rT
0.8
V
3
0.68 mW
6
5
2
VGT
IGT
VD = 6 V;
VD = 6 V;
TVJ = 25°C
TVJ = -40°C
TVJ = 25°C
2
3
V
V
1
4
1
150 mA
220 mA
T
VJ = -40°C
VGD
IGD
TVJ = TVJM
TVJ = TVJM
;
;
VD = 2/3 VDRM
VD = 2/3 VDRM
0.25
10 mA
V
4: PGM
5: PGM
=
=
20 W
60 W
IL
TVJ = 25°C; tP = 30 ms; VD = 6 V
IG = 0.45 A; diG/dt = 0.45 A/ms
200 mA
IGD, TVJ = 140 C
6: PGM = 120 W
0.1
10-3
IH
TVJ = 25°C; VD = 6 V; RGK = ¥
150 mA
10-2
10-1
100
101
102
A
IG
tgd
TVJ = 25°C; VD = 1/2 VDRM
IG = 1 A; diG/dt = 1 A/ms
2
ms
Fig. 1 Gate trigger characteristics
QS
IRM
TVJ = 125°C; IT, IF = 300 A; -di/dt = 50 A/ms
760 mC
275
A
100
TVJ = 25 C
RthJW
per thyristor ; 180° el; watervolume = 4 l/min
0.203 K/W
µs
tgd
dS
dA
a
Creeping distance on surface
Creepage distance in air
Maximum allowable acceleration
12.7 mm
9.6 mm
50 m/s2
typ.
Limit
10
Optional accessories for modules
Keyed Gate/Cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red
Type ZY 180 L (L = Left for pin pair 4/5)
Type ZY 180 R (R = Right for pin pair 6/7)
UL 758, style 1385,
CSA class 5851, guide 460-1-1
1
0.01
A
0.1
1
10
IG
Fig. 2 Gate trigger delay time
(Thermoswitch
on request)
© 2000 IXYS All rights reserved
2 - 3
HVL 900
10000
106
A2s
ITSM
I2t
VR = 0V
A
50 Hz
80 % VRRM
TVJ = 45°C
8000
TVJ = 140°C
TVJ = 45°C
6000
4000
2000
0
TVJ = 140°C
105
104
0.001
0.01
0.1
s
1
1
10
ms
t
t
Fig. 3 Surge overload current
ITSM: Crest value, t: duration
Fig. 4 I2t versus time (1-10 ms)
5000
4500
n=1
4000
n=2
3500
3000
2500
2000
1500
1000
500
n=5
n=10
n=25
n=50
n=100
0
1
10
100
ED [%]
Fig. 5 Rated rms current vs. duty cycle
0.22
0.2
2 l/min
4 l/min
6 l/min
0.18
0.16
0.14
0.12
0.1
0.08
0.06
0.04
0.02
0
3
0.001
0.01
0.1
1
10
100
1 10
t [s]
Fig. 6 Transient thermal impedance vs. time
© 2000 IXYS All rights reserved
3 - 3
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