HVU134 [ETC]
;
| 型号： | HVU134 |
| 厂家： | 
ETC |
| 描述： | 二极管 测试 |
| 文件： | 总5页 (文件大小：31K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HVU134
Silicon Epitaxial Planar Pin Diode for High Frequency Switching
ADE-208-786 (Z)
Rev. 0
Apr. 1999
Features
•
•
•
Low capacitance.(C=0.4pF max)
Low forward resistance. (rf=2.0Ω max)
Ultra small Resin Package (URP) is suitable for surface mount design.
Ordering Information
Type No.
Laser Mark
Package Code
HVU134
P4
URP
Outline
Cathode mark
Mark
1
2
1. Cathode
2. Anode
HVU134
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
VRM
VR
Value
65
Unit
V
Peak reverse voltage
Reverse voltage
Forward current
Power dissipation
Junction temperature
Storage temperature
60
V
IF
100
mA
mW
°C
Pd
150
Tj
125
Tstg
-55 to +125
°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Typ Max Unit Test Condition
Reverse current
Forward voltage
Capacitance
IR
0.1
1.0
0.4
2.0
µA
V
VR = 60V
VF
C
IF = 10 mA
pF
Ω
VR = 1V, f = 1 MHz
Forward resistance rf
ESD-Capability *1
IF = 10 mA, f = 100 MHz
200
V
C =100pF, R = 1.5KΩ, Both forward and
reverse direction 5 pulse
Notes 1. Failure criterion ; IR ≥ 0.1 µA at VR = 60V.
Rev.0, Apr. 1999, page 2 of 5
HVU134
Main Characteristic
10-2
10-4
10-6
10-8
10-7
10-8
10-9
10-10
10-11
10-10
-12
10
-12
-13
10
10
0.6
0.8
0
0.2
0.4
1.0
0
40
60
80
100
20
Forward voltage VF (V)
Reverse voltage V R(V)
Fig.2 Reverse current Vs. Reverse voltage
Fig.1 Forward current Vs. Forward voltage
103
f=1MHz
f=100MHz
10
102
10
1.0
1.0
-1
10-1
10
10
102
-2
10
-4
10-5
10
Forward current I F (A)
10-3
1.0
Reverse voltage V R(V)
Fig.4 Forward resistance Vs. Forward current
Fig.3 Capacitance Vs. Reverse voltage
Rev.0, Apr. 1999, page 3 of 5
HVU134
Package Dimensions
Unit : mm
Cathode Mark
2
1.7±0.15
1
2.5±0.15
1. Cathode
2. Anode
Hitachi Code
JEDECCode
EIAJCode
URP
—
—
Weight(g)
0.004
Rev.0, Apr. 1999, page 4 of 5
HVU134
Disclaimer
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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Copyright © Hitachi, Ltd., 2001. All rights reserved. Printed in Japan.
Colophon 4.0
Rev.0, Apr. 1999, page 5 of 5
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