关闭背景特效

IRF520NL [ETC]

TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 9.7A I(D) | TO-262 ; 晶体管| MOSFET | N沟道| 100V V（ BR ） DSS | 9.7AI （D ） | TO- 262\n

IRF520NL


元器件型号：	IRF520NL
生产厂家：	ETC
描述和应用：	TRANSISTOR \| MOSFET \| N-CHANNEL \| 100V V(BR)DSS \| 9.7A I(D) \| TO-262 晶体管\| MOSFET \| N沟道\| 100V V（ BR ） DSS \| 9.7AI （D ） \| TO- 262\n 晶体晶体管
PDF文件：	总10页 (文件大小：219K)
下载文档：	下载PDF数据表文档文件
型号参数：IRF520NL参数

IRF520NLPBF

Advamced {rpcess Technology Surface Mount

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63 IRF

IRF520NPBF

HEXFET㈢ Power MOSFET

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107 IRF

IRF520NS

Power MOSFET(Vdss=100V, Rds(on)=0.20ohm, Id=9.7A)

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114 IRF

IRF520NSPBF

Advamced {rpcess Technology Surface Mount

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43 IRF

IRF520NSTRL

TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 9.7A I(D) | TO-263AB

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48 ETC

IRF520NSTRLPBF

暂无描述

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0 IRF

IRF520NSTRR

TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 9.7A I(D) | TO-263AB

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24 ETC

IRF520NSTRRPBF

暂无描述

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0 IRF

IRF520PBF

HEXFET Power MOSFET

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56 IRF

IRF520PBF

Power MOSFET

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34 VISHAY

IRF520PBF

HEXFET Power MOSFET

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37 IRF

IRF520R

TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 9.2A I(D) | TO-220AB

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39 ETC

IRF520S

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51 ETC

IRF520S

Power Field-Effect Transistor, 9A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

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0 MOTOROLA

IRF520STRL

Power Field-Effect Transistor, 9.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN

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0 VISHAY

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