关闭背景特效

IRFS635 [ETC]

TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 4.4A I(D) | TO-220VAR ; 晶体管| MOSFET | N沟道| 250V V（ BR ） DSS | 4.4AI （D ） | TO- 220VAR\n

IRFS635


元器件型号：	IRFS635
生产厂家：	ETC
描述和应用：	TRANSISTOR \| MOSFET \| N-CHANNEL \| 250V V(BR)DSS \| 4.4A I(D) \| TO-220VAR 晶体管\| MOSFET \| N沟道\| 250V V（ BR ） DSS \| 4.4AI （D ） \| TO- 220VAR\n 晶体晶体管
PDF文件：	总5页 (文件大小：300K)
下载文档：	下载PDF数据表文档文件
型号参数：IRFS635参数

IRFS640

200V N-Channel MOSFET

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394 FAIRCHILD

IRFS640

200V N-Channel MOSFET

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117 FAIRCHILD

IRFS640

Improved inductive ruggedness

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55 SAMSUNG

IRFS640

Power Field-Effect Transistor, 9.8A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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1 SAMSUNG

IRFS640A

Rugged Gate Oxide Technology

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46 FAIRCHILD

IRFS640A

Improved gate charge

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84 SAMSUNG

IRFS640A

TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 9.8A I(D) | TO-220AB

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452 ETC

IRFS640B

200V N-Channel MOSFET

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241 FAIRCHILD

IRFS640B

200V N-Channel MOSFET

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16 TGS

IRFS640B

18A, 200V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220F, 3 PIN

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0 ROCHESTER

IRFS640B_FP001

Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, TO-220F, 3 PIN

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0 FAIRCHILD

IRFS640B_FP001

18A, 200V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, TO-220F, 3 PIN

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0 ROCHESTER

IRFS641

Improved inductive ruggedness

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21 SAMSUNG

IRFS641

TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 9.8A I(D) | SOT-186

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27 ETC

IRFS641

Power Field-Effect Transistor, 9.8A I(D), 150V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 SAMSUNG

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