IRFS720A [ETC]
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 2.8A I(D) | TO-220AB ; 晶体管| MOSFET | N沟道| 400V V( BR ) DSS | 2.8AI (D ) | TO- 220AB型号: | IRFS720A |
厂家: | ETC |
描述: | TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 2.8A I(D) | TO-220AB
|
文件: | 总7页 (文件大小:260K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
IRFS720A
Advanced Power MOSFET
FEATURES
BVDSS = 400 V
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
RDS(on) = 1.8
ID = 2.8 A
W
Improved Gate Charge
Extended Safe Operating Area
TO-220F
Lower Leakage Current : 10 A (Max.) @ VDS = 400V
m
W
Lower RDS(ON) : 1.408 (Typ.)
1
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol
Characteristic
Value
Units
VDSS
Drain-to-Source Voltage
V
400
2.8
1.8
13
O
Continuous Drain Current (TC=25
)
C
ID
A
O
C
Continuous Drain Current (TC=100
Drain Current-Pulsed
)
IDM
VGS
EAS
IAR
1
A
V
O
+
_
Gate-to-Source Voltage
30
2
Single Pulsed Avalanche Energy
Avalanche Current
269
2.8
3.3
4.0
33
mJ
A
O
1
O
EAR
dv/dt
Repetitive Avalanche Energy
1
mJ
V/ns
O
3
Peak Diode Recovery dv/dt
O
O
Total Power Dissipation (TC=25
Linear Derating Factor
)
C
W
PD
TJ , TSTG
TL
O
C
0.27
W/
Operating Junction and
- 55 to +150
300
Storage Temperature Range
O
C
Maximum Lead Temp. for Soldering
Purposes, 1/8” from case for 5-seconds
Thermal Resistance
Symbol
R qJC
R
Characteristic
Typ.
Max.
Units
--
--
3.74
62.5
Junction-to-Case
O
C
/W
Junction-to-Ambient
JA
q
Rev. B
©1999 Fairchild Semiconductor Corporation
N-CHANNEL
POWER MOSFET
IRFS720A
O
C
Electrical Characteristics (TC=25 unless otherwise specified)
Symbol
Characteristic
Min. Typ. Max. Units
Test Condition
VGS=0V,I =250 A
BVDSS
m
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
V
400 --
--
D
O
BV/ T
D
I =250 A
See Fig 7
DS=5V,ID=250 mA
VGS=30V
GS=-30V
VDS=400V
DS=320V,TC=125
D
V/
C
m
J
-- 0.54 --
D
VGS(th)
V
V
2.0
--
--
--
4.0
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
100
IGSS
nA
V
--
-- -100
--
--
--
10
IDSS
Drain-to-Source Leakage Current
m
A
O
C
V
--
100
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
W
W
RDS(on)
VGS=10V,ID=1.4A
VDS=50V,ID=1.4A
4
--
--
1.8
O
gfs
Ciss
Coss
Crss
td(on)
tr
--
--
--
--
--
--
--
--
--
--
--
4
O
2.28 --
385 500
VGS=0V,VDS=25V,f =1MHz
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
70
33
35
45
110
45
26
--
60
27
pF
See Fig 5
12
VDD=200V,ID=3.3A,
17
W
RG=18
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
51
4
5
O
See Fig 13
O
18
Qg
Total Gate Charge
Gate-Source Charge
Gate-Drain(“ Miller” ) Charge
19
V
DS=320V,VGS=10V,
Qgs
Qgd
nC
2.7
11.1
ID=3.3A
4
--
5
See Fig 6 & Fig 12
O O
Source-Drain Diode Ratings and Characteristics
Symbol
Characteristic
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
Test Condition
IS
ISM
VSD
trr
--
--
--
--
--
--
2.8
13
1.5
--
Integral reverse pn-diode
A
1
in the MOSFET
O
O
4
O
V
--
T =25 ,I =2.8A,VGS=0V
C
J S
O
ns
230
TJ=25 C ,IF=3.3A
m
C
Qrr
-- 1.16 --
di /dt=100A/ s
m
F
Notes ;
Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
1
O
L=60mH, IAS=2.8A, VDD=50V, RG=27W , Starting TJ =25oC
2
O
ISD _ 3.3A, di/dt 110A/ s, VDD_BVDSS , Starting TJ =25o
3
_
<
m
C
<
<
O
_
<
4
Pulse Test : Pulse Width = 250 ms, Duty Cycle 2%
O
Essentially Independent of Operating Temperature
5
O
N-CHANNEL
POWER MOSFET
IRFS720A
Fig 1. Output Characteristics
Fig 2. Transfer Characteristics
1
1
VGS
10
10
Top :
1 5 V
1 0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
150 oC
0
Bottom : 4.5 V
10
0
10
25 o
C
@ Notes :
1. V = 0 V
-1
GS
10
@ Notes :
1. 250 s Pulse Test
2. V = 50 V
DS
- 55o
C
µ
3. 250 s Pulse Test
µ
2. TC = 25o
C
-1
10
-1
0
1
2
4
6
8
10
10
10
10
VGS , Gate-Source Voltage [V]
VDS , Drain-Source Voltage [V]
Fig 3. On-Resistance vs. Drain Current
Fig 4. Source-Drain Diode Forward Voltage
5
4
3
2
1
0
1
10
V
= 10 V
GS
0
10
V
= 20 V
GS
@ Notes :
o
150
C
1. V = 0 V
GS
o
25
C
o
2. 250 s Pulse Test
µ
@ Note : T = 25
J
C
-1
10
0
3
6
9
12
0.4
0.6
0.8
1.0
1.2
I , Drain Current [A]
VSD , Source-Drain Voltage [V]
D
Fig 5. Capacitance vs. Drain-Source Voltage
Fig 6. Gate Charge vs. Gate-Source Voltage
600
400
200
0
C
iss= Cgs+ Cgd ( Cds= shorted )
V
DS = 80 V
DS = 200 V
DS = 320 V
Coss= Cds+ C
gd
10
Crss= C
C iss
gd
V
V
5
C oss
@ Notes :
1. VGS = 0 V
2. f = 1 MHz
C rss
@ Notes : ID = 3.3 A
15 20
0
0
1
0
5
10
10
10
Q , Total Gate Charge [nC]
VDS , Drain-Source Voltage [V]
G
N-CHANNEL
POWER MOSFET
IRFS720A
Fig 7. Breakdown Voltage vs. Temperature
Fig 8. On-Resistance vs. Temperature
1.2
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.1
1.0
0.9
@ Notes :
1. VGS = 0 V
@ Notes :
1. V = 10 V
GS
2. I = 250
A
µ
2. I = 1.65 A
D
D
0.8
-75
-50
-25
0
25
50
75
100
125
150
175
-75
-50
-25
0
25
50
75
100
125
150
175
T , Junction Temperature [ oC]
T , Junction Temperature [ oC]
J
J
Fig 9. Max. Safe Operating Area
Fig 10. Max. Drain Current vs. Case Temperature
3
2
10
Operation in This Area
is Limited by RDS(on)
1
10
100
s
µ
1 ms
10 ms
2
1
0
100 ms
0
10
DC
@ Notes :
-1
10
1. T = 25o
C
C
2. T = 150o
C
J
3. Single Pulse
-2
10
0
1
2
3
25
50
75
100
125
150
10
10
10
10
T , Case Temperature [ oC]
V
DS , Drain-Source Voltage [V]
c
Fig 11. Thermal Response
D=0.5
100
10-1
10-2
0.2
0.1
@
Notes
:
1.
Z
θ JC(t)=3.74 oC/W Max.
2. Duty Factor, D=t/t2
3. TJM-TC=PDM*Zθ JC(t)
0.05
1
0.02
0.01
PDM
t1
t2
single pulse
10-5
10-4
10-3
10-2
10-1
100
101
t1 , Square Wave Pulse Duration [sec]
N-CHANNEL
POWER MOSFET
IRFS720A
Fig 12. Gate Charge Test Circuit & Waveform
“ Current Regulator ”
VGS
Same Type
as DUT
W
50K
Qg
12V
200nF
10V
300nF
VDS
Qgs
Qgd
VGS
DUT
R2
3mA
R1
Charge
Current Sampling (IG) Current Sampling (ID)
Resistor Resistor
Fig 13. Resistive Switching Test Circuit & Waveforms
RL
Vout
Vin
Vout
90%
VDD
( 0.5 rated VDS
)
RG
DUT
10%
Vin
10V
td(on)
tr
td(off)
tf
t on
t off
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
1
2
2
LL
ID
----
--------------------
EAS
=
LL IAS
BVDSS -- VDD
VDS
BVDSS
IAS
Vary tp to obtain
required peak ID
RG
ID (t)
VDD
C
DUT
VDS (t)
VDD
10V
t p
t p
Time
N-CHANNEL
POWER MOSFET
IRFS720A
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
DUT
VDS
--
IS
L
Driver
VGS
Same Type
as DUT
RG
VDD
VGS
• dv/dt controlled by “RG”
• IS controlled by Duty Factor “D”
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I S
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
Vf
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
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Definition
Advance Information
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First Production
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