IRFS730B [KERSEMI]
400V N-Channel MOSFET; 400V N沟道MOSFET
| 型号： | IRFS730B |
| 厂家： | 
Kersemi Electronic Co., Ltd. |
| 描述： | 400V N-Channel MOSFET |
| 文件： | 总9页 (文件大小：3101K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRF730B/IRFS730B
400V N-Channel MOSFET
www.kersemi.com
General Description
Features
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supplies and
electronic lamp ballasts based on half bridge.
•
•
•
•
•
•
5.5A, 400V, R
= 1.0Ω @V = 10 V
DS(on) GS
Low gate charge ( typical 25 nC)
Low Crss ( typical 20 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
D
G
TO-220
IRF Series
TO-220F
IRFS Series
G
D S
G D
S
S
Absolute Maximum Ratings
T = 25°C unless otherwise noted
C
Symbol
Parameter
IRF730B
IRFS730B
Units
V
V
I
Drain-Source Voltage
400
DSS
- Continuous (T = 25°C)
Drain Current
5.5
3.5
22
5.5 *
3.5 *
22 *
A
D
C
- Continuous (T = 100°C)
A
C
I
(Note 1)
Drain Current
- Pulsed
A
DM
V
E
I
Gate-Source Voltage
± 30
330
5.5
V
GSS
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Single Pulsed Avalanche Energy
Avalanche Current
mJ
A
AS
AR
E
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
7.3
mJ
V/ns
W
AR
dv/dt
5.5
P
Power Dissipation (T = 25°C)
73
38
D
C
- Derate above 25°C
Operating and Storage Temperature Range
0.58
0.3
W/°C
°C
T , T
-55 to +150
300
J
STG
Maximum lead temperature for soldering purposes,
T
°C
L
1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
Parameter
IRF730B
IRFS730B
3.31
Units
°C/W
°C/W
°C/W
R
R
R
Thermal Resistance, Junction-to-Case Max.
Thermal Resistance, Case-to-Sink Typ.
1.71
0.5
θJC
--
θCS
Thermal Resistance, Junction-to-Ambient Max.
62.5
62.5
θJA
Electrical Characteristics
T = 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
V
= 0 V, I = 250 µA
GS D
Drain-Source Breakdown Voltage
400
--
--
--
--
V
DSS
∆BV
Breakdown Voltage Temperature
Coefficient
DSS
I
= 250 µA, Referenced to 25°C
0.4
V/°C
D
/
∆T
J
I
V
V
V
V
= 400 V, V = 0 V
--
--
--
--
--
--
--
--
10
100
100
-100
µA
µA
nA
nA
DSS
DS
GS
Zero Gate Voltage Drain Current
= 320 V, T = 125°C
DS
GS
GS
C
I
= 30 V, V = 0 V
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
GSSF
DS
I
= -30 V, V = 0 V
GSSR
DS
On Characteristics
V
V
V
V
= V , I = 250 µA
Gate Threshold Voltage
2.0
--
--
4.0
1.0
--
V
Ω
S
GS(th)
DS
GS
DS
GS
D
R
Static Drain-Source
On-Resistance
DS(on)
= 10 V, I = 2.75 A
0.83
4.5
D
g
= 40 V, I = 2.75 A
(Note 4)
Forward Transconductance
--
FS
D
Dynamic Characteristics
C
C
C
Input Capacitance
--
--
--
790
80
1000
100
26
pF
pF
pF
iss
V
= 25 V, V = 0 V,
GS
DS
Output Capacitance
oss
rss
f = 1.0 MHz
Reverse Transfer Capacitance
20
Switching Characteristics
t
t
t
t
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
--
--
--
--
--
--
--
15
55
85
50
25
4.3
11
40
120
180
110
33
ns
ns
d(on)
V
= 200 V, I = 5.5 A,
DD
D
r
R
= 25 Ω
G
ns
d(off)
f
(Note 4, 5)
(Note 4, 5)
ns
Q
Q
Q
nC
nC
nC
g
V
V
= 320 V, I = 5.5 A,
DS
D
--
= 10 V
gs
gd
GS
--
Drain-Source Diode Characteristics and Maximum Ratings
I
Maximum Continuous Drain-Source Diode Forward Current
--
--
--
--
--
--
--
5.5
22
1.5
--
A
A
S
I
Maximum Pulsed Drain-Source Diode Forward Current
SM
V
t
V
V
= 0 V, I = 5.5 A
Drain-Source Diode Forward Voltage
Reverse Recovery Time
--
V
SD
GS
S
= 0 V, I = 5.5 A,
265
2.32
ns
µC
rr
GS
S
(Note 4)
dI / dt = 100 A/µs
Q
Reverse Recovery Charge
--
F
rr
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 19mH, I = 5.5A, V = 50V, R = 25 Ω, Starting T = 25°C
AS
DD
G
J
3. I ≤ 5.5A, di/dt ≤ 300A/µs, V
≤ BV Starting T = 25°C
SD
DD
DSS, J
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
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Typical Characteristics
VGS
Top :
15.0V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
101
101
Bottom: 5.0V
150oC
25oC
100
100
-55oC
※
Notes :
※
Notes :
1. V = 40V
2. 250 s Pulse Test
μ
1. 250 s Pulse Test
DS μ
-1
10
℃
2. TC = 25
-1
10
-1
10
2
4
6
8
10
100
101
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
5
4
3
2
1
0
101
VGS = 10V
VGS = 20V
100
℃
25
℃
150
※
Notes :
1. V = 0V
2. 250 s Pulse Test
GS μ
※
℃
Note : T = 25
J
-1
10
0
3
6
9
12
15
18
0.2
0.4
0.6
0.8
1.0
1.2
1.4
ID, Drain Current [A]
VSD, Source-Drain voltage [V]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
2000
1500
1000
500
0
12
10
8
C
iss = Cgs + Cgd (Cds = shorted)
Coss = Cds + C
gd
Crss = C
gd
VDS = 80V
VDS = 200V
VDS = 320V
C
iss
6
4
C
oss
※
Notes :
1. VGS = 0 V
2. f = 1 MHz
C
rss
2
※
Note: ID = 5.5 A
0
-1
1
10
0
3
6
9
12
15
18
21
24
27
10
100
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
Typical Characteristics (Continued)
1.2
1.1
1.0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
※Notes :
0.9
1. VGS = 0 V
※
Notes :
2. ID = 250 μA
1. VGS = 10 V
2. ID = 2.75 A
0.8
-100
-100
-50
0
50
100
150
200
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
T, Junction Temperature [oC]
J
Figure 7. Breakdown Voltage Variation
vs Temperature
Figure 8. On-Resistance Variation
vs Temperature
102
101
100
102
Operation in This Area
is Limited by R DS(on)
Operation in This Area
is Limited by R DS(on)
10 µs
100 µs
100 µs
101
100
1 ms
1 ms
10 ms
10 ms
100 ms
DC
DC
-1
10
-1
10
※
Notes :
※
Notes :
1. TC = 25 oC
1. TC = 25 oC
2. T = 150 oC
2. T = 150 oC
J
J
3. Single Pulse
3. Single Pulse
-2
-2
10
10
0
101
102
103
0
1
10
2
10
3
10
10
10
VDS, Drain-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 9-1. Maximum Safe Operating Area
for IRF730B
Figure 9-2. Maximum Safe Operating Area
for IRFS730B
6
5
4
3
2
1
0
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25
50
75
100
125
150
℃
TC, Case Temperature [
]
Figure 10. Maximum Drain Current
vs Case Temperature
Typical Characteristics
1 0 0
D = 0 .5
※
N otes
1. Zθ (t)
2. D uJtCy Factor, D =t1/t2
3. TJM TC P D M Zθ JC (t)
:
℃
/W M ax.
=
1.71
0 .2
0 .1
-
=
*
0 .0 5
1 0 -1
PDM
0 .0 2
0 .0 1
t1
sin g le p u lse
t2
1 0 -2
1 0-5
1 0-4
1 0-3
1 0-2
1 0-1
1 00
1 01
t1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
Figure 11. Transient Thermal Response Curve for IRF730B
D = 0 .5
1 0 0
1 0 -1
1 0 -2
0 .2
※
N otes
1. Z θ JC(t)
2. D uty Factor, D =t1/t2
3. T JM TC P D M Zθ JC(t)
:
℃
/W M ax.
=
3.31
0 .1
-
=
*
0 .0 5
0 .0 2
0 .0 1
PDM
t1
t2
sin g le p u lse
1 0-5
1 0-4
1 0-3
1 0-2
1 0-1
1 00
1 01
t1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
Figure 11-2. Transient Thermal Response Curve for IRFS730B
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Gate Charge Test Circuit & Waveform
VGS
Same Type
50Kꢀ
as DUT
Qg
12V
200nF
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
RL
VDS
90%
VDS
VDD
VGS
RG
10%
VGS
DUT
10V
td(on)
tr
td(off)
tf
t on
t off
Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
--------------------
BVDSS - VDD
L
1
2
2
----
EAS
=
L IAS
VDS
I D
BVDSS
IAS
RG
VDD
ID (t)
VDD
VDS (t)
DUT
10V
t p
t p
Time
Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
DUT
VDS
_
I SD
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I SD
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
Package Dimensions
TO-220
4.50 ±0.20
9.90 ±0.20
(8.70)
+0.10
–0.05
1.30
ø3.60 ±0.10
1.27 ±0.10
1.52 ±0.10
0.80 ±0.10
+0.10
–0.05
0.50
2.40 ±0.20
2.54TYP
2.54TYP
[2.54 ±0.20]
[2.54 ±0.20]
10.00 ±0.20
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Package Dimensions
TO-220F
2.54 ±0.20
10.16 ±0.20
ø3.18 ±0.10
(7.00)
(0.70)
(1.00x45°)
MAX1.47
0.80 ±0.10
#1
0.35 ±0.10
+0.10
–0.05
0.50
2.76 ±0.20
2.54TYP
2.54TYP
[2.54 ±0.20]
[2.54 ±0.20]
9.40 ±0.20
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