IRFS842 [ETC]

TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 4A I(D) | TO-220VAR ; 晶体管| MOSFET | N沟道| 500V V( BR ) DSS | 4A I( D) | TO- 220VAR\n
IRFS842
型号: IRFS842
厂家: ETC    ETC
描述:

TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 4A I(D) | TO-220VAR
晶体管| MOSFET | N沟道| 500V V( BR ) DSS | 4A I( D) | TO- 220VAR\n

晶体 晶体管
文件: 总5页 (文件大小:316K)
下载:  下载PDF数据表文档文件

IRFS843

TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 4A I(D) | TO-220VAR

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18 ETC

IRFS843

Power Field-Effect Transistor, 4A I(D), 450V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN

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0 SAMSUNG

IRFS9130

Power Field-Effect Transistor, 8.3A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN

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1 SAMSUNG

IRFS9132

Power Field-Effect Transistor, 6.9A I(D), 100V, 0.4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN

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0 SAMSUNG

IRFS9140

TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 13.2A I(D) | SOT-186VAR

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31 ETC

IRFS9141

TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 13.2A I(D) | SOT-186VAR

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12 ETC

IRFS9142

Power Field-Effect Transistor, 10.4A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN

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0 SAMSUNG

IRFS9143

Power Field-Effect Transistor, 10.4A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN

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1 SAMSUNG

IRFS9240

TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 7.6A I(D) | SOT-186VAR

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19 ETC

IRFS9241

TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 7.6A I(D) | SOT-186VAR

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13 ETC

IRFS9520

Power Field-Effect Transistor, 6A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN

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0 SAMSUNG

IRFS9521

Power Field-Effect Transistor, 6A I(D), 60V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN

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0 SAMSUNG

IRFS9522

Power Field-Effect Transistor, 5A I(D), 100V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN

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1 SAMSUNG

IRFS9523

Power Field-Effect Transistor, 5A I(D), 60V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN

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0 SAMSUNG

IRFS9523

Power Field-Effect Transistor, 5A I(D), 60V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN

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0 SAMSUNG