IRFT004 [ETC]
Interface IC ; 接口IC\nPowered by ICminer.com Electronic-Library Service CopyRight 2003
相关型号:
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IRFTS8342
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
INFINEON
![](http://pdffile.icpdf.com/pdf2/p00236/img/page/IRFTS8342TRP_1383866_files/IRFTS8342TRP_1383866_1.jpg)
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IRFTS8342TRPBF
Power Field-Effect Transistor, 8.2A I(D), 30V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, TSOP-6
INFINEON
![](http://pdffile.icpdf.com/pdf2/p00369/img/page/IRFTS9342_2255282_files/IRFTS9342_2255282_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00369/img/page/IRFTS9342_2255282_files/IRFTS9342_2255282_2.jpg)
IRFTS9342
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
INFINEON
![](http://pdffile.icpdf.com/pdf2/p00225/img/page/IRFTS9342TRP_1314731_files/IRFTS9342TRP_1314731_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00225/img/page/IRFTS9342TRP_1314731_files/IRFTS9342TRP_1314731_2.jpg)
IRFTS9342TRPBF
Power Field-Effect Transistor, 5.8A I(D), 30V, 0.04ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, TSOP-6
INFINEON
![](http://pdffile.icpdf.com/pdf2/p00263/img/page/IRFU015_1583319_files/IRFU015_1583319_1.jpg)
IRFU012
Power Field-Effect Transistor, 6.7A I(D), 50V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
SAMSUNG
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