IRHM250 [ETC]


型号：	IRHM250
厂家：	ETC
描述：	TRANSISTOR \| MOSFET \| N-CHANNEL \| 200V V(BR)DSS \| 25A I(D) \| TO-254AA 晶体管\| MOSFET \| N沟道\| 200V V（ BR ） DSS \| 25A I（ D） \| TO- 254AA\n 晶体晶体管
文件：	总1页 (文件大小：79K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

相关型号：

IRHM2C50SE

TRANSISTOR N-CHANNEL(BVdss=600V, Rds(on)=0.60ohm, Id=10.4A)

INFINEON

IRHM2C50SED

Power Field-Effect Transistor, 10.4A I(D), 600V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

INFINEON

IRHM2C50SEDPBF

Power Field-Effect Transistor, 10.4A I(D), 600V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

INFINEON

IRHM2C50SEPBF

Power Field-Effect Transistor, 10A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA

INFINEON

IRHM2C50SEU

Power Field-Effect Transistor, 10.4A I(D), 600V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

INFINEON

IRHM2C50SEUPBF

Power Field-Effect Transistor, 10.4A I(D), 600V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

INFINEON

IRHM3054

RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA)

INFINEON

IRHM3054D

Power Field-Effect Transistor, 35A I(D), 60V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, TO-254AA, 3 PIN

INFINEON

IRHM3054DPBF

Power Field-Effect Transistor, 35A I(D), 60V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, TO-254AA, 3 PIN

INFINEON

IRHM3054PBF

Power Field-Effect Transistor, 35A I(D), 60V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA

INFINEON

IRHM3054U

Power Field-Effect Transistor, 35A I(D), 60V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, TO-254AA, 3 PIN

INFINEON

IRHM3054UPBF

Power Field-Effect Transistor, 35A I(D), 60V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, TO-254AA, 3 PIN

INFINEON