IRHNJ598130 [ETC]
-100V 1000kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-0.5 package ; -100V 1000kRad高可靠性的单P沟道TID硬化MOSFET在SMD- 0.5包\n
| 型号： | IRHNJ598130 |
| 厂家： | 
ETC |
| 描述： | -100V 1000kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-0.5 package
|
| 文件： | 总8页 (文件大小：122K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 94047A
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-0.5)
IRHNJ597130
100V, P-CHANNEL
TECHNOLOGY
R
5
Product Summary
Part Number Radiation Level RDS(on)
ID
IRHNJ597130 100K Rads (Si) 0.205Ω -12.5A
IRHNJ593130 300K Rads (Si) 0.205Ω -12.5A
SMD-0.5
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space appli-
cations. These devices have been characterized for
Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of paral-
leling and temperature stability of electrical param-
eters.
Features:
n
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Ultra Low RDS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Ceramic Package
Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
I
@ V
@ V
= -12V, T = 25°C Continuous Drain Current
-12.5
D
GS
C
A
I
D
= -12V, T = 100°C Continuous Drain Current
-8.0
-50
GS
C
I
Pulsed Drain Current ➀
Max. Power Dissipation
DM
@ T = 25°C
P
75
W
W/°C
V
D
C
Linear Derating Factor
0.6
V
Gate-to-Source Voltage
±20
GS
E
Single Pulse Avalanche Energy ➀
Avalanche Current ➀
96
mJ
A
AS
I
-12.5
7.5
AR
E
AR
dv/dt
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➀
Operating Junction
mJ
V/ns
-6.2
T
-55 to 150
J
T
Storage Temperature Range
oC
g
STG
Pckg. Mounting Surface Temp.
Weight
300 ( for 5s )
1.0 ( Typical )
For footnotes refer to the last page
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1
10/01/01
IRHNJ597130
Pre-Irradiation
Electrical Characteristics @Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
DSS
Drain-to-Source Breakdown Voltage
-100
—
—
—
—
V
V
= 0V, I = -1.0mA
D
GS
V/°C Reference to 25°C, I = -1.0mA
∆BV
/∆T Temperature Coefficient of Breakdown
-0.12
DSS
J
D
Voltage
R
Static Drain-to-Source On-State
Resistance
—
—
0.205
Ω
V = -12V, I = -8.0A
GS D
DS(on)
➀
V
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
-2.0
6.8
—
—
—
—
—
-4.0
—
V
V
= V , I = -1.0mA
GS(th)
fs
DS
GS
D
Ω
g
S ( )
V
DS
V
> -15V, I
= -8.0A ➀
DS
I
-10
-25
= -80V ,V =0V
DS GS
DSS
µA
—
V
= -80V,
DS
= 0V, T = 125°C
V
GS
J
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
4.0
-100
100
45
V
V
= -20V
= 20V
GSS
GSS
GS
GS
nA
nC
Q
Q
Q
V
=-12V, I = -12.5A
GS D
g
gs
gd
d(on)
r
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
FallTime
16
11
V
= -50V
DS
t
t
t
t
28
V
DD
V
= -50V, I = -12.5A,
D
78
35
=-12V, R = 7.5Ω
GS G
ns
d(off)
f
125
—
L
+ L
Total Inductance
S
D
nH
Measured from the center of
drain pad to center of source pad
C
C
C
Input Capacitance
Output Capacitance
—
—
—
1372
326
20
—
—
—
V
= 0V, V
= -25V
iss
oss
rss
GS
DS
f = 1.0MHz
pF
Reverse Transfer Capacitance
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
I
I
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) ➀
Diode Forward Voltage
—
—
—
—
—
—
—
—
—
—
-12.5
-50
S
A
SM
V
t
-5.0
191
778
V
ns
nC
T = 25°C, I = -12.5A, V
= 0V ➀
j
SD
rr
S
GS
Reverse Recovery Time
T = 25°C, I =-12.5A, di/dt ≤ -100A/µs
j
F
V
Q
Reverse Recovery Charge
≤ -50V ➀
DD
RR
t
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
on
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
R
R
Junction-to-Case
—
—
—
1.67
—
thJC
°C/W
Junction-to-PC board
6.9
soldered to a 2” square copper-clad board
thJ-PCB
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
www.irf.com
Radiation Characteristics
IRHNJ597130
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @Tj = 25°C, PostTotal Dose Irradiation ➀➀
Parameter
100K Rads(Si)1
300KRads(Si)2
Units
Test Conditions
Min
Max
Min
Max
BV
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
-100
-2.0
—
—
-4.0
-100
100
-100
-2.0
—
—
-5.0
-100
100
V
= 0V, I = -1.0mA
GS D
DSS
V
V
V
= V , I = -1.0mA
GS(th)
GS
DS
D
I
V
=-20V
GS
GSS
nA
I
—
—
V
= 20 V
GS
GSS
I
—
—
-10
0.205
—
—
-10
0.205
µA
Ω
V
V
=-80V, V =0V
GS
= -12V, I =-8.0A
D
DSS
DS
GS
R
DS(on)
Static Drain-to-Source
On-State Resistance (TO-3)
Static Drain-to-Source
On-State Resistance (SMD-0.5)
Diode Forward Voltage
➀
R
DS(on)
➀
—
—
0.205
-5.0
—
—
0.205
-5.0
Ω
V
= -12V, I =-8.0A
GS
D
V
SD
➀
V
V
= 0V, I = -12.5A
GS S
1. Part number IRHNJ597130
2. Part number IRHNJ593130
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
VDS (V)
Ion
LET
(MeV/(mg/cm2))
37.9
Energy
(MeV)
252.6
314
Range
@VGS=20V
(µm) @VGS=0V @VGS=5V @VGS=10V @VGS=15V @VGS=17.5V
Br
I
Au
33.1
30.5
28.4
-100
-100
-100
-100
-100
-100
-100
-100
-100
-100
-100
-30
-100
-75
—
-100
-25
59.7
82.3
350
—
-120
-100
-80
-60
-40
-20
0
Br
I
Au
0
5
10
15
20
25
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHNJ597130
Pre-Irradiation
100
10
1
100
VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
VGS
TOP
TOP
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
BOTTOM -5.0V
BOTTOM -5.0V
10
-5.0V
-5.0V
20µs PULSE WIDTH
T = 25 C
J
20µs PULSE WIDTH
T = 150 C
J
°
°
1
0.1
1
10
100
0.1
1
10
100
-V , Drain-to-Source Voltage (V)
DS
-V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
10
1
2.5
-12.5A
=
I
D
°
T = 25 C
J
2.0
1.5
1.0
0.5
0.0
°
T = 150 C
J
V
= -25V
DS
20µs PULSE WIDTH
V
= -12V
GS
5
6
7
8
9
10
11
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
-V , Gate-to-Source Voltage (V)
GS
T , Junction Temperature( C)
J
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs.Temperature
4
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Pre-Irradiation
IRHNJ597130
2000
1600
20
16
12
8
V
= 0V,
f = 1MHz
C SHORTED
ds
GS
I
D
= -12.5A
C
= C + C
iss
gs
gd
gd ,
V
V
V
=-80V
=-50V
=-20V
C
= C
DS
DS
DS
rss
C
= C + C
gd
oss
ds
C
iss
1200
800
400
0
C
oss
4
FOR TEST CIRCUIT
SEE FIGURE 13
C
rss
0
1
10
100
0
10
20
30
40
-V , Drain-to-Source Voltage (V)
DS
Q
, Total Gate Charge (nC)
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
100
10
1
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
°
T = 150 C
J
°
T = 25 C
J
1ms
1
10ms
Tc = 25°C
Tj = 150°C
Single Pulse
V
= 0 V
GS
0.1
0.1
0.0
1.0
2.0
3.0
4.0
5.0
1
10
100
1000
-V ,Source-to-Drain Voltage (V)
SD
-V
, Drain-toSource Voltage (V)
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
ForwardVoltage
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5
IRHNJ597130
Pre-Irradiation
RD
14
12
10
8
VDS
VGS
D.U.T.
RG
-
+
VDD
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
6
Fig 10a. Switching Time Test Circuit
4
V
DS
2
90%
0
25
50
75
100
125
150
°
, Case Temperature ( C)
T
C
10%
V
GS
t
t
r
t
t
f
Fig 9. Maximum Drain Current Vs.
d(on)
d(off)
CaseTemperature
Fig 10b. Switching Time Waveforms
10
1
D = 0.50
0.20
0.10
0.05
P
DM
0.1
t
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
1
t
2
Notes:
1. Duty factor D = t / t
1
2
2. Peak T = P
x Z
+ T
C
J
DM
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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Pre-Irradiation
IRHNJ597130
L
V
200
160
120
80
DS
I
D
TOP
-5.6A
-
D.U.T
R
-8.0A
BOTTOM-12.5A
G
VDD
A
+
I
AS
DRIVER
V
-
GS
0.01
t
Ω
p
15V
40
Fig 12a. Unclamped Inductive Test Circuit
I
0
AS
25
50
75
100
125
150
°
Starting T , Junction Temperature( C)
J
Fig 12c. Maximum Avalanche Energy
Vs. DrainCurrent
t
p
V
(BR)DSS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
Q
Q
G
-12V
1
.3µF
-12 V
-
Q
V
GS
GD
+
DS
D.U.T.
V
GS
V
G
-3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
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7
IRHNJ597130
Footnotes:
Pre-Irradiation
➀➀➀Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
➀➀➀Total Dose Irradiation with V Bias.
➀➀ Repetitive Rating; Pulse width limited by
maximum junction temperature.
GS
= 0 during
-12 volt V
applied and V
➀➀➀V
= -25V, starting T = 25°C, L=1.2 mH
J
GS
irradiation per MIL-STD-750, method 1019, condition A.
DS
DD
Peak I = -12.5A, V
= -12V
L
GS
➀➀Total Dose Irradiation with V Bias.
➀➀ I
≤ -12.5A, di/dt ≤ -320A/µs,
DS
applied and V = 0 during
GS
SD
DD
-80 volt V
V
≤ -100V, T ≤ 150°C
DS
irradiation per MlL-STD-750, method 1019, condition A.
J
Case Outline and Dimensions — SMD-0.5
PAD ASSIGNMENTS
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 10/01
8
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