IRHNJ67130 [INFINEON]
100V, N-CHANNEL; 100V N沟道
| 型号： | IRHNJ67130 |
| 厂家： | 
Infineon |
| 描述： | 100V, N-CHANNEL |
| 文件： | 总8页 (文件大小：180K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD-95816A
RADIATION HARDENED
POWER MOSFET
SURFACE-MOUNT (SMD-0.5)
IRHNJ67130
100V, N-CHANNEL
TECHNOLOGY
Product Summary
Part Number Radiation Level RDS(on)
ID
IRHNJ67130 100K Rads (Si)
IRHNJ63130 300K Rads (Si)
0.042Ω 22A*
0.042Ω 22A*
SMD-0.5
International Rectifier’s R6TM technology provides
superior power MOSFETs for space applications.
These devices have improved immunity to Single
Event Effect (SEE) and have been characterized for
useful performance with Linear Energy Transfer (LET)
up to 90MeV/(mg/cm2).
Features:
n
n
n
n
n
n
n
n
n
n
Low RDS(on)
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Their combination of very low R
DS(on)
and faster
switching times reduces power loss and increases
power density in today’s high speed switching
applications such as DC-DC converters and motor
controllers. These devices retain all of the well
established advantages of MOSFETs such as voltage
control, ease of paralleling and temperature stability
of electrical parameters.
Ceramic Package
Light Weight
Pre-Irradiation
Absolute Maximum Ratings
Parameter
Units
I
@ V
@ V
= 12V, T = 25°C Continuous Drain Current
22*
D
D
GS
GS
C
A
I
= 12V, T = 100°C Continuous Drain Current
19
88
C
I
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
DM
@ T = 25°C
P
75
W
W/°C
V
D
C
0.6
V
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
±20
73
GS
E
mJ
A
AS
I
22
AR
E
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
7.5
mJ
V/ns
AR
dv/dt
3.8
T
-55 to 150
J
oC
g
T
Storage Temperature Range
STG
Pckg. Mounting Surface Temp.
Weight
300 (for 5s)
1.0 (Typical)
* Current is limited by package
For footnotes refer to the last page
www.irf.com
1
02/18/05
IRHNJ67130
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
Drain-to-Source Breakdown Voltage
100
—
—
V
V
= 0V, I = 1.0mA
D
DSS
GS
V/°C Reference to 25°C, I = 1.0mA
∆BV
/∆T Temperature Coefficient of Breakdown
—
0.11
—
DSS
J
D
Voltage
R
V
Static Drain-to-Source On-State
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
—
—
0.042
Ω
V
= 12V, I = 19A
GS D
Ã
DS(on)
2.0
14
—
—
—
—
—
4.0
—
10
25
V
S ( )
V
DS
= V , I = 1.0mA
GS(th)
fs
GS
D
Ω
g
V
DS
= 15V, I
= 19A Ã
DS
I
V
= 80V ,V =0V
DSS
DS GS
µA
—
V
= 80V,
DS
= 0V, T = 125°C
V
GS
J
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
4.0
100
-100
35
13
14
20
38
35
15
V
V
= 20V
= -20V
GSS
GSS
GS
GS
nA
nC
Q
Q
Q
V
= 12V, I = 22A
g
gs
gd
d(on)
r
GS D
V
= 50V
DS
t
t
t
t
V
DD
= 50V, I = 22A,
D
V
= 12V, R = 7.5Ω
GS G
ns
d(off)
f
L
+ L
—
S
D
nH
Measured from the center of
drain pad to center of source pad
C
C
C
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Gate Resistance
—
—
—
—
1730
340
6.0
—
—
—
—
V
= 0V, V
= 25V
f = 1.0MHz
iss
oss
rss
GS DS
pF
R
1.03
Ω
f = 1.0MHz, open drain
g
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
I
I
V
t
Q
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
—
—
—
—
22*
88
1.2
355
3.0
S
SM
SD
rr
A
V
ns
µC
T = 25°C, I = 22A, V
= 0V Ã
j
S
GS
T = 25°C, I = 22A, di/dt ≤ 100A/µs
j
F
V
DD
≤ 25V Ã
RR
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
* Current is limited by package
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
R
Junction-to-Case
—
—
1.67
°C/W
thJC
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
For footnotes refer to the last page
2
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Radiation Characteristics
IRHNJ67130
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
Up to 300K Rads (Si)1 Units
Test Conditions
Min
Max
BV
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
100
2.0
—
—
—
—
4.0
100
-100
10
V
= 0V, I = 1.0mA
DSS
GS D
V
V
V
= V , I = 1.0mA
GS
GS(th)
DS
D
I
I
V
GS
= 20V
GSS
GSS
nA
µA
V
GS
= -20V
I
V
= 120V, V = 0V
DS GS
DSS
R
DS(on)
Static Drain-to-Source
On-State Resistance (TO-3)
—
0.045
Ω
V
GS
= 12V, I = 12A
D
R
DS(on)
Static Drain-to-Sourcee
On-State Resistance (SMD-0.5)
—
—
0.042
1.2
Ω
V
= 12V, I = 12A
D
GS
V
SD
Diode Forward Voltage
V
V
= 0V, I = 19A
D
GS
1. Part numbers IRHNJ67130, IRHNJ63130
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion
LET
Energy Range
VDS (V)
@VGS= @VGS=
@VGS= @VGS= @VGS= @VGS= @VGS=
(MeV/(mg/cm2))
(MeV)
(µm)
0V
-5V
-10V
-15V
-17V
-19V
-20V
Br
I
37.46
59.72
81.44
278.5
320
36.03
30.97
27.53
100
100
100
100
100
100
100
100
-
100
30
-
100
100
40
-
-
-
-
-
Au
333
-
120
100
80
60
40
20
0
Br
I
Au
0
-5
-10
VGS
-15
-20
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHNJ67130
Pre-Irradiation
100
10
1
100
10
1
VGS
15V
12V
10V
8.0V
7.0V
6.0V
5.0V
VGS
TOP
TOP
15V
12V
10V
8.0V
7.0V
6.0V
5.0V
BOTTOM 4.5V
BOTTOM 4.5V
0.1
4.5V
4.5V
60µs PULSE WIDTH
60µs PULSE WIDTH
Tj = 25°C
Tj = 150°C
0.01
0.1
1
10
100
1000
0.1
1
10
100
1000.0
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
10
1
2.5
2.0
1.5
1.0
0.5
0.0
22A
=
I
D
T
= 150°C
J
T
= 25°C
J
V
= 50V
DS
60µs PULSE WIDTH
V
=12V
GS
0.1
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
4
5
6
7
8
9
10
T , Junction Temperature ( C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs.Temperature
4
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Pre-Irradiation
IRHNJ67130
20
16
12
8
2800
V
= 0V,
f = 1MHz
gd , ds
GS
C
V
V
V
= 80V
DS
DS
DS
= C + C
gs
C
SHORTED
I
= 22A
iss
D
= 50V
= 20V
C
= C
gd
= C + C
ds
2400
2000
1600
1200
800
400
0
rss
C
oss
gd
C
iss
C
oss
4
FOR TEST CIRCUIT
SEE FIGURE 13
C
rss
0
1
10
100
0
5
10 15 20 25 30 35 40
V
, Drain-to-Source Voltage (V)
DS
Q
Total Gate Charge (nC)
G,
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
100
10
1
1000
100
10
OPERATION IN THIS AREA
T
= 150°C
J
LIMITED BY R
(on)
DS
T
= 25°C
J
100µs
1ms
1
10ms
Tc = 25°C
Tj = 150°C
V
= 0V
Single Pulse
GS
0.1
1.0
10
100
1000
0.4
0.6
0.8
1.0
1.2
1.4
V
, Drain-toSource Voltage (V)
V
, Source-to-Drain Voltage (V)
DS
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
ForwardVoltage
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5
IRHNJ67130
Pre-Irradiation
RD
30
25
20
15
10
5
VDS
LIMITED BY PACKAGE
VGS
D.U.T.
RG
+VDD
-
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
0
25
50
75
100
125
150
°
, Case Temperature ( C)
T
C
10%
V
GS
t
t
r
t
t
f
Fig 9. Maximum Drain Current Vs.
d(on)
d(off)
CaseTemperature
Fig 10b. Switching Time Waveforms
10
1
D = 0.50
0.20
0.10
0.05
P
2
DM
0.1
SINGLE PULSE
(THERMAL RESPONSE)
t
1
0.02
0.01
t
2
Notes:
1. Duty factor D =
t / t
1
2. Peak T =P
x Z
+ T
C
J
DM
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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Pre-Irradiation
IRHNJ67130
120
100
80
60
40
20
0
I
D
TOP
10A
14A
15V
BOTTOM 22A
DRIVER
+
L
V
DS
.
D.U.T
R
G
V
DD
-
I
A
AS
V
2
GS
0.01
Ω
t
p
Fig 12a. Unclamped Inductive Test Circuit
25
50
75
100
125
150
°
Starting T , Junction Temperature ( C)
J
V
(BR)DSS
t
p
Fig 12c. Maximum Avalanche Energy
Vs. DrainCurrent
I
AS
Current Regulator
Same Type as D.U.T.
Fig 12b. Unclamped Inductive Waveforms
50KΩ
.2µF
12V
Q
G
.3µF
+
12 V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
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7
IRHNJ67130
Footnotes:
Pre-Irradiation
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Ä Total Dose Irradiation with V Bias.
À
Repetitive Rating; Pulse width limited by
maximum junction temperature.
GS
= 0 during
12 volt V
applied and V
Á V
= 25V, starting T = 25°C, L= 0.3 mH
J
GS
irradiation per MIL-STD-750, method 1019, condition A.
DS
DD
Peak I = 22A, V
= 12V
L
GS
Å Total Dose Irradiation with V
Bias.
 I
≤ 22A, di/dt ≤ 420A/µs,
DS
= 0 during
SD
DD
80 volt V
applied and V
V
≤ 100V, T ≤ 150°C
DS
irradiation per MlL-STD-750, method 1019, condition A.
GS
J
Case Outline and Dimensions — SMD-0.5
PAD ASSIGNMENTS
1 = DRAIN
2 = GATE
3 = SOURCE
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 02/2005
8
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