IRHNJ63230 [INFINEON]
RADIATION HARDENED POWER MOSFET SURFACE-MOUNT (SMD-0.5); 抗辐射功率MOSFET表面贴装（ SMD- 0.5 ）
| 型号： | IRHNJ63230 |
| 厂家： | 
Infineon |
| 描述： | RADIATION HARDENED POWER MOSFET SURFACE-MOUNT (SMD-0.5) |
| 文件： | 总8页 (文件大小：144K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD-96923B
RADIATION HARDENED
POWER MOSFET
SURFACE-MOUNT (SMD-0.5)
IRHNJ67230
200V, N-CHANNEL
TECHNOLOGY
Product Summary
Part Number
IRHNJ67230
IRHNJ63230
Radiation Level RDS(on)
100K Rads (Si) 0.13Ω 16A
300K Rads (Si) 0.13Ω 16A
ID
SMD-0.5
International Rectifier’s R6TM technology provides
superior power MOSFETs for space applications.
These devices have improved immunity to Single
Event Effect (SEE) and have been characterized for
useful performance with Linear Energy Transfer
(LET) up to 90MeV/(mg/cm2). Their combination of
Features:
n
n
n
n
n
n
n
n
n
n
Low RDS(on)
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
very low R
and faster switching times reduces
DS(on)
power loss and increases power density in today’s
high speed switching applications such as DC-DC
converters and motor controllers. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, ease of paralleling
and temperature stability of electrical parameters.
Ceramic Package
Light Weight
Pre-Irradiation
Absolute Maximum Ratings
Parameter
Units
I
@ V
@ V
= 12V, T = 25°C Continuous Drain Current
16
D
GS
GS
C
A
I
= 12V, T = 100°C Continuous Drain Current
10
64
D
C
I
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
DM
@ T = 25°C
P
75
W
W/°C
V
D
C
0.6
V
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
±20
60
GS
E
mJ
A
AS
I
16
AR
E
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
7.5
mJ
V/ns
AR
dv/dt
6.2
T
-55 to 150
J
oC
g
T
Storage Temperature Range
STG
Pckg. Mounting Surface Temp.
Weight
300 (for 5s)
1.0 (Typical)
For footnotes refer to the last page
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1
03/17/06
IRHNJ67230
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
Drain-to-Source Breakdown Voltage
200
—
—
—
—
V
V
= 0V, I = 1.0mA
D
DSS
GS
V/°C Reference to 25°C, I = 1.0mA
∆BV
/∆T Temperature Coefficient of Breakdown
0.22
DSS
J
D
Voltage
R
V
Static Drain-to-Source On-State
Resistance
—
—
0.13
Ω
V
= 12V, I = 10A
DS(on)
GS D
Ã
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
2.0
10
—
—
—
—
—
4.0
—
V
V
DS
= V , I = 1.0mA
GS(th)
fs
GS
D
Ω
g
S ( )
V
= 15V, I
= 10A Ã
DS
DS
I
10
25
V
DS
= 160V ,V =0V
GS
DSS
µA
—
V
= 160V,
DS
= 0V, T = 125°C
V
GS
J
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
4.0
100
-100
42
V
= 20V
GSS
GS
nA
nC
V
= -20V
GSS
GS
Q
Q
Q
V
= 12V, I = 16A
g
gs
gd
d(on)
r
GS
D
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
15
15
V
= 100V
DS
t
t
t
t
18
V
DD
= 100V, I = 16A,
D
32
V
= 12V, R = 7.5Ω
GS G
ns
Turn-Off Delay Time
Fall Time
41
d(off)
f
10
L
+ L
Total Inductance
—
S
D
nH
Measured from the center of
drain pad to center of source pad
C
C
C
Input Capacitance
—
—
—
—
1450
210
3.8
—
—
—
—
V
= 0V, V
= 25V
iss
GS
DS
f = 1.0MHz
Output Capacitance
pF
oss
rss
g
Reverse Transfer Capacitance
Internal Gate Resistance
R
0.9
Ω
f = 1.0MHz, open drain
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
I
I
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) À
Diode Forward Voltage
—
—
—
—
—
—
—
—
—
—
16
64
S
A
SM
V
1.2
346
3.5
V
T = 25°C, I = 16A, V
= 0V Ã
j
SD
S
GS
t
Q
Reverse Recovery Time
Reverse Recovery Charge
ns
µC
T = 25°C, I = 16A, di/dt ≤ 100A/µs
j
rr
RR
F
V
DD
≤ 25V Ã
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
* Current is limited by package
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
R
Junction-to-Case
—
—
1.67
°C/W
thJC
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
For footnotes refer to the last page
2
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Radiation Characteristics
IRHNJ67230
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
Up to 300K Rads (Si) Units
Test Conditions
Min
Max
BV
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
200
2.0
—
—
4.0
V
= 0V, I = 1.0mA
DSS
GS D
V
V
V
= V , I = 1.0mA
GS(th)
GS
DS
D
I
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
100
-100
10
V
GS
= 20V
GSS
GSS
DSS
nA
µA
—
—
V
GS
= -20V
V
=160V, V =0V
GS
DS
R
DS(on)
On-State Resistance (TO-3)
—
0.134
Ω
V
GS
= 12V, I = 10A
D
R
DS(on)
Static Drain-to-Source On-State
Resistance (SMD-0.5)
—
—
0.130
1.2
Ω
V
= 12V, I = 10A
D
GS
V
Diode Forward Voltage
V
V
= 0V, I = 16A
GS
D
SD
Part numbers IRHNJ67230 and IRHNJ63230
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion
LET
Energy
Range
VDS (V)
(MeV/(mg/cm2))
(MeV)
2441
825
(µm)
205
66
@VGS= 0V
200
@VGS= -5V @VGS= -10V @VGS= -15V
Xe
Xe
Au
43
59
90
200
200
170
200
200
--
190
190
--
200
1480
80
170
240
200
160
120
80
Xe - LE T=43
Xe - LE T=59
Au - LET=90
40
0
0
-5
-10
VGS
-15
-20
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHNJ67230
Pre-Irradiation
100
100
10
1
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
VGS
15V
TOP
TOP
12V
10V
9.0V
8.0V
7.0V
6.0V
10
BOTTOM 5.0V
BOTTOM 5.0V
5.0V
1
5.0V
µ
60 s PULSE WIDTH
Tj = 25°C
µ
60 s PULSE WIDTH
Tj = 150°C
0.1
0.1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
3.0
2.5
2.0
1.5
1.0
0.5
0.0
100
10
I
= 16A
T
= 150°C
D
J
T
= 25°C
J
1
0.1
0.01
V
= 50V
DS
60µs PULSE WIDTH
V
= 12V
GS
-60 -40 -20
0
20 40 60 80 100 120 140 160
5
6
7
8
9
10 11 12 13
V
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (°C)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs.Temperature
4
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Pre-Irradiation
IRHNJ67230
20
16
12
8
2800
V
= 0V,
= C
f = 1 MHz
GS
V
V
V
= 160V
I
= 16A
C
C
C
+ C , C
SHORTED
DS
DS
DS
D
iss
gs
gd
ds
2400
2000
1600
1200
800
400
0
= 100V
= 40V
= C
rss
oss
gd
= C + C
ds
gd
C
iss
C
oss
4
C
FOR TEST CIRCUIT
SEE FIGURE 13
rss
0
0
10
Q
20
30
40
50
1
10
100
Total Gate Charge (nC)
V
, Drain-to-Source Voltage (V)
G,
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
1000
100
10
100
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
T
= 150°C
J
10
100µs
1ms
= 25°C
T
J
1
Tc = 25°C
Tj = 150°C
Single Pulse
V
= 0V
10ms
GS
0.1
1.0
1
10
100
1000
0.4
0.6
0.8
1.0
1.2
V
, Drain-to-Source Voltage (V)
V
, Source-to-Drain Voltage (V)
DS
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
ForwardVoltage
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5
IRHNJ67230
Pre-Irradiation
RD
16
12
8
VDS
VGS
D.U.T.
RG
+VDD
-
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
4
V
DS
90%
0
25
50
T
75
100
125
150
, Case Temperature (°C)
C
10%
V
GS
t
t
r
t
t
f
Fig 9. Maximum Drain Current Vs.
d(on)
d(off)
CaseTemperature
Fig 10b. Switching Time Waveforms
10
1
D = 0.50
0.20
0.10
0.05
P
2
DM
0.1
t
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
1
t
2
Notes:
1. Duty factor D = t / t
1
2. Peak T =P
x Z
+ T
C
J
DM
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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Pre-Irradiation
IRHNJ67230
100
80
60
40
20
0
I
D
15V
TOP
7.2A
10A
BOTTOM 16A
DRIVER
+
L
V
DS
.
D.U.T
R
G
V
DD
-
I
A
AS
V
2
GS
0.01
Ω
t
p
Fig 12a. Unclamped Inductive Test Circuit
25
50
75
100
125
150
Starting T , Junction Temperature (°C)
V
(BR)DSS
J
t
p
Fig 12c. Maximum Avalanche Energy
Vs. DrainCurrent
I
AS
Current Regulator
Fig 12b. Unclamped Inductive Waveforms
Same Type as D.U.T.
50KΩ
.2µF
12V
Q
G
.3µF
+
12 V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
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7
IRHNJ67230
Footnotes:
Pre-Irradiation
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Ä Total Dose Irradiation with V Bias.
À
Repetitive Rating; Pulse width limited by
maximum junction temperature.
GS
= 0 during
12 volt V
applied and V
DS
Á V
= 25V, starting T = 25°C, L= 0.47 mH
J
GS
irradiation per MIL-STD-750, method 1019, condition A.
DD
Peak I = 16A, V
= 12V
L
GS
Å Total Dose Irradiation with V
Bias.
 I
≤ 16A, di/dt ≤ 570A/µs,
DS
= 0 during
SD
DD
160 volt V
applied and V
GS
V
≤ 200V, T ≤ 150°C
DS
irradiation per MlL-STD-750, method 1019, condition A.
J
Case Outline and Dimensions — SMD-0.5
PAD ASSIGNMENTS
1 = DRAIN
2 = GATE
3 = SOURCE
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TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 03/2006
8
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