JANS2N3866AUB [ETC]
BJT ; BJT\n
| 型号： | JANS2N3866AUB |
| 厂家： | 
ETC |
| 描述： | BJT
|
| 文件： | 总22页 (文件大小：124K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
The documentation and process
conversion measures necessary to
comply with this revision shall be
completed by 23 May 2002.
INCH-POUND
MIL-PRF-19500/398F
23 January 2002
SUPERSEDING
MIL-PRF-19500/398E
11 September 2000
PERFORMANCE SPECIFICATION
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-FREQUENCY
TYPES 2N3866, 2N3866A, 2N3866UB, 2N3866AUB, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
1. SCOPE
* 1.1 Scope. This specification covers the performance requirements for NPN silicon, VHF-UHF amplifier
transistor. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500.
Two levels of product assurance are provided for die.
* 1.2 Physical dimensions. See figure 1 (TO-39), figure 2 (surface mount, UB), and figure 3 (die).
* 1.3 Maximum ratings.
Types
PT
TC = (3),
PT (1)
TA = (2)
TJ and
TSTG
RθJC
RθJA
VCBO
V dc
VCEO
V dc
VEBO
V dc
IC
W
W
A dc
°C
°C/W
°C/W
2N3866, 2N3866A
2N3866UB, 2N3866AUB
2.9
1.0
0.5
60
60
30
30
3.5
3.5
0.4
0.4
-65 to +200
-65 to +200
60
325
(1) Derate linearly 5.71 mW/°C (2N3866, 2N3866A) and 2.86 mW/°C (2N3866UB, 2N3866AUB) above
TA ≥ +25°C.
(2) TA = Room ambient as defined in the general requirements of MIL-PRF-19500.
(3) PT = 2.9 W at TC = +25°C, derate at 16.6 mW/°C above TC > +25°C.
* 1.4 Primary electrical characteristics.
h
V
C
P
P
out2
h
FE (1)
CE(SAT)
obo
out1
fe
V
= 5.0 V dc
V
= 15 V dc
I
= 100 mA dc
= 10 mA dc
V
= 28 V dc
V
= 28 V dc V
= 28 V dc
CE
CE
= 50 mA dc
C
CB
CC
CC
= 0.15 W Pin = 0.075 W
I
= 50 mA dc
I
I
I
= 0
P
C
C
B
E
in
f = 200 MHz
f = 400 MHz
f = 400 MHz
100 kHz ≤ f ≤ 1 MHz
2N3866
2N3866A
2N3866
2N3866A
V dc
1.0
pF
W
W
2N3866UB 2N3866AUB 2N3866UB 2N3866AUB
Min
Max
15
200
25
200
2.5
8.0
4.0
7.5
1.0
2.0
0.5
3.5
(1) Pulsed (see 4.5.1)
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in
improving this document should be addressed to: Defense Supply Center Columbus, ATTN: DSCC-VAC, P. O. Box
3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD Form 1426)
appearing at the end of this document or by letter.
AMSC N/A
FSC 5961
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
MIL-PRF-19500/398F
2. DOCUMENTS
2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This
section does not include documents cited in other sections of this specification or recommended for additional
information or as examples. While every effort has been made to ensure the completeness of this list, document
users are cautioned that they must meet all specified requirements documents cited in sections 3 and 4 of this
specification, whether or not they are listed.
2.2 Government documents.
2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a
part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are
those listed in the issue of the Department of Defense Index of Specifications and Standards (DODISS) and
supplement thereto, cited in the solicitation (see 6.2).
SPECIFICATION
DEPARTMENT OF DEFENSE
MIL-PRF-19500 - Semiconductor Devices, General Specification for.
STANDARD
DEPARTMENT OF DEFENSE
MIL-STD-750 - Test Methods for Semiconductor Devices.
*
(Unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the
Document Automation and Production Services (DAPS), Building 4D (DPM-DODSSP), 700 Robbins Avenue,
Philadelphia, PA 19111-5094.)
* 2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited
herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws
and regulations unless a specific exemption has been obtained.
3. REQUIREMENTS
3.1 General. The requirements for acquiring the product described herein shall consist of this document and
MIL-PRF-19500.
3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a
manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer's list (QML)
before contract award (see 4.2 and 6.3).
* 3.3 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein shall be as
specified in MIL-PRF-19500 and as follows:
η: (eta) Collector efficiency = rf power out x 100
dc power in
Pin: Input power
Pout: Output power
* 3.4 Interface requirements and physical dimensions. The interface requirements and physical dimensions shall
be as specified in MIL-PRF-19500 and on figure 1 (similar to T0-39), figure 2 (UB), and figure 3 (die) herein.
* 3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein.
Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2).
2
MIL-PRF-19500/398F
NOTES:
1. Dimensions are in inches.
2. Metric equivalents are given for general information only.
3. Beyond r (radius) maximum, TW shall be held for a minimum length of 0.011 inch (0.28 mm).
4. TL measured from HD maximum.
5. Outline in this zone is not controlled.
6. CD shall not vary more than .010 inch (0.25 mm) in zone P. This zone is controlled for automatic handling.
7. Leads at gauge plane .054 +.001, -.000 inch (1.37 + 0.03, - 0.00 mm) below seating plane shall be within
.007 inch (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at
MMC.
8. LU applies between L and L . LD applies between L and LL minimum. Diameter is uncontrolled in L
1
and beyond LL minimum.
9. All three leads.
2
2
1
10. The collector shall be electrically and mechanically connected to the case.
11. r (radius) applies to both inside corners of tab.
FIGURE 1. Physical dimensions.
3
MIL-PRF-19500/398F
Dimensions
Millimeters
Symbol
Notes
Inches
Min
Max
.260
Min
Max
6.60
CH
LC
LD
LU
.240
6.10
0 .200 TP
5.08 TP
7
.016
.016
.021
.019
0.41
0.41
0.53
0.48
8, 9
8, 9
HD
CD
.335
.305
.370
.335
8.51
7.75
9.40
8.51
6
TW
TL
.028
.029
.500
.034
.045
.750
.050
0.71
0.74
0.86
1.14
3
4
LL
12.70
19.05
1.27
8, 9
8, 9
L
L
1
2
.250
.100
6.35
2.54
8, 9
P
6
5
Q
r
.010
0.25
11, 3
7
α
45° TP
45° TP
FIGURE 1. Physical dimensions - Continued.
4
MIL-PRF-19500/398F
Dimensions
Millimeters
Min
Symbol
Inches
Note
Min
.046
.017
.016
.016
.016
.085
.071
.035
.085
.115
Max
.056
.035
.024
.024
.024
.108
.079
.039
.108
.128
.128
.038
.038
Max
1.42
0.89
0.61
0.61
0.61
2.74
2.01
0.99
2.74
3.25
3.25
0.96
0.96
A
0.97
0.43
0.41
0.41
0.41
2.41
1.81
0.89
2.41
2.82
A1
B1
B2
B3
D
D1
D2
D3
E
E3
L1
L2
.022
.022
0.56
0.56
NOTES:
1. Dimensions are in inches.
2. Metric equivalents are given for general information only.
* FIGURE 2. Physical dimensions, surface mount (UB version).
5
MIL-PRF-19500/398F
E
B
Die size:
Die thickness:
Base pad:
Emitter pad:
Back metal:
Top metal:
Back side:
Glassivation:
0.016 x 0.020 inches
0.008 ± 0.0016 inches
0.0028 x 0.0028 inches
0.0028 x 0.0028 inches
Gold, 6500 ± 1950 Ang
Aluminum, 17500 ± 2500 Ang
Collector
SiO2, 7500 ± 1500 Ang
* FIGURE 3. JANHC and JANKC (A-version) die dimensions.
6
MIL-PRF-19500/398F
3.4.2 Transistor construction. These devices shall be constructed in a manner and using materials which enable
the transistors to meet the applicable requirements of MIL-PRF-19500 and this document.
* 3.4.3 Marking. Devices shall be marked in accordance with MIL-PRF-19500, except for the UB suffix package.
Marking on the UB package shall consist of an abbreviated part number, the date code, and the manufacturer's
symbol or logo. The prefixes JAN, JANTX, JANTXV, and JANS can be abbreviated as J, JX, JV, and JS
respectively. The "2N" prefix and the "AUB" suffix can also be omitted.
3.5 Electrical performance characteristics. Unless otherwise specified, the electrical performance characteristics
are as specified in 1.3, 1.4, and table I herein.
3.6 Electrical test requirements. The electrical test requirements shall be the subgroups specified in 4.4.2 and
4.4.3 herein.
* 3.7 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and
shall be free from other defects that will affect life, serviceability, or appearance.
4. VERIFICATION
4.1 Classification of inspections. The inspection requirements specified herein are classified as follows:
a. Qualification inspection (see 4.2).
b. Screening (see 4.3).
c. Conformance inspection (see 4.4).
* 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified
herein.
* 4.3 Screening (JANS, JANTXV, and JANTX levels only). Screening shall be in accordance with table IV of
MIL-PRF-19500 and as specified herein. The following measurements shall be made in accordance with table I
herein. Devices that exceed the limits of table I herein shall not be acceptable.
Screen (see table IV
of MIL-PRF-19500)
Measurement
JANS level
JANTX and JANTXV levels
3
Thermal impedance, method 3131
of MIL-STD-750
Thermal impedance, method 3131 of
MIL-STD-750
9
I
and h
Not applicable
CEO
CEO
FE1
FE1
11
I
and h
;
I
and h
CEO FE1
∆I
= 100 percent of initial value
CEO
or 2 µA dc, whichever is greater.
∆h = ±20 percent of initial value.
FE1
12
13
See 4.3.1
See 4.3.1
∆I
= 100 percent of initial value
∆I
= 100 percent of initial value or
CEO
or 2 µA dc, whichever is greater;
∆h = ± 20 percent of initial
CEO
2 µA dc, whichever is greater;
∆h = ± 20 percent of initial value;
FE1
FE1
subgroup 2 of table I herein.
value; subgroups 2 and 3 of table I
herein.
7
MIL-PRF-19500/398F
4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: TA = room ambient as defined in the
general requirements of MIL-STD-750; VCB = 10 to 30 V dc. Power shall be applied to achieve a junction
temperature TJ = +135°C minimum and power dissipation of PT ≥ 75 percent of max rated PT as defined in 1.3
herein.
* 4.3.2 Screening (JANHC and JANKC). Screening of JANHC and JANKC die shall be in accordance with
MIL-PRF-19500, “Discrete Semiconductor Die/Chip Lot Acceptance”. Burn-in duration for the JANKC level follows
JANS requirements; the JANHC follows JANTX requirements.
4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as
specified herein.
4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500 and table I
herein.
4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for
subgroup testing in VIa (JANS) of 4.4.2.1. See 4.4.2.2 herein for JAN, JANTX, and JANTXV group B testing.
Electrical measurements (end-points) requirements shall be in accordance with group A, subgroup 2 herein. Delta
requirements apply to the subgroups specified in 4.4.2.1 and 4.4.2.2, and shall be those specified in 4.5.5.
* 4.4.2.1 Group B inspection, table VIa (JANS) of MIL-PRF-19500.
Subgroup Method
Conditions
B4
B5
1037
1027
VCB = 10 V dc; 2,000 cycles.
VCB = 10 V dc; PD ≥ 100 percent of maximum rated PT (see 1.3). (NOTE: If a
failure occurs, resubmission shall be at the test conditions of the original
sample.)
Option 1: 96 hours minimum sample size in accordance with table VIa of
MIL-PRF-19500, adjust TA or PD to achieve TJ = +275°C minimum.
Option 2: 216 hours minimum, sample size = 45, c = 0; adjusted TA or PD to
achieve a TJ = +225°C minimum.
8
MIL-PRF-19500/398F
4.4.2.2 Group B inspection, table VIb (JAN, JANTX and JANTXV). Separate samples may be used for each step.
In the event of a group B failure, the manufacturer may pull a new sample at double size from either the failed
assembly lot or from another assembly lot from the same wafer lot. If the new “assembly lot” option is exercised, the
failed assembly lot shall be scrapped.
Step Method Conditions
1
2
3
1027
1027
1032
Steady-state life: Test condition B, 340 hours, VCB = 10 to 30 V dc; power shall be applied to
achieve TJ = +150°C minimum and a power dissipation of PD ≥ 75 percent of max rated PT as
defined in 1.3. n = 45 devices, c = 0. For small lots, n = 12 devices, c = 0.
The steady-state life test of step 1 shall be extended to 1,000 hours for each die design.
Samples shall be selected from a wafer lot every twelve months of wafer production. Group
B, step 2 shall not be required more than once for any single wafer lot. n = 45, c = 0.
High-temperature life (non-operating), t = 340 hours; TA = +200°C. n = 22, c = 0.
4.4.2.3 Group B sample selection. Samples selected from group B inspection shall meet all of the following
requirements.
a. For JAN, JANTX and JANTXV samples shall be selected randomly from a minimum of three wafers (or from
each wafer in the lot) from each wafer lot. For JANS samples shall be selected from each inspection lot.
See MIL-PRF-19500.
b. Must be chosen from an inspection lot that has been submitted to and passed group A, subgroup 2
conformance inspection. When the final lead finish is solder or any plating prone to oxidation at high
temperature, the samples for life test (subgroups B4 and B5 for JANS, and group B for JAN, JANTX and
JANTXV) may be pulled prior to the application of final lead finish.
* 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the tests and conditions
specified for subgroup testing in table VII of MIL-PRF-19500, and in 4.4.3.1 (JANS).and 4.4.3.2 (JAN, JANTX, and
JANTXV) herein for group C testing. Electrical measurements (end-points) requirements shall be in accordance with
group A, subgroup 2 herein. Delta requirements apply to the subgroups C6 and C8, and shall be those specified in
4.5.5.
* 4.4.3.1 Group C inspection, table VII (JANS) of MIL-PRF-19500.
Subgroup Method
Conditions
C2
C5
C6
2036
3131
1026
Test condition E (not applicable to UB suffix devices).
See 4.5.2; n = 22, c =0.
Test condition B, 1,000 hours, VCB = 10 V dc; power shall be
applied to achieve TJ = +150°C minimum and a power dissipation of PD ≥ 75
percent of max rated PT as defined in 1.3. n = 45 devices, c = 0. For small
lots, n = 12 devices, c = 0.
* 4.4.3.2 Group C inspection, table VII (JAN, JANTX and JANTXV) of MIL-PRF-19500.
Subgroup Method
Conditions
C2
C6
C8
2036
3005
Test condition E (not applicable to UB suffix devices).
Not applicable.
Pre-pulse condition VCE = 0, IC = 0; pulse condition IC = 400 mA dc, tP = 60 s, 1
cycle; tr ≤ 6s, tf ≤ 6s. Sample size, n = 22, c = 0 (see 4.5.4).
9
MIL-PRF-19500/398F
4.4.3.3 Group C sample selection. Samples for subgroups in group C shall be chosen at random from any
inspection lot containing the intended package type and lead finish procured to the same specification which is
submitted to and passes group A tests for conformance inspection. Testing of a subgroup using a single device type
enclosed in the intended package type shall be considered as complying with the requirements for that subgroup.
* 4.4.4 Group E inspection. Group E inspection shall be performed in accordance with table II herein for
qualification or re-qualification only. In case qualification was awarded to a prior revision of the specification that did
not request the performance of table II tests, the tests specified in table II herein must be performed to maintain
qualification.
4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.
4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in MIL-STD-750.
4.5.2 Thermal resistance. Thermal resistance measurements shall be conducted in accordance with test method
3131 of MIL-STD-750. The following details shall apply:
a. Collector current magnitude during power application shall be 79 mA dc minimum.
b. Collector to emitter voltage magnitude shall be 20 V dc minimum.
c. Reference temperature measuring point shall be the case.
d. Reference point temperature shall be +25°C ≤ TR ≤ +75°C and recorded before the test is started.
e. Mounting arrangement shall be with heat sink to case.
f. Maximum limit of RθJC shall be 60°C/W.
* 4.5.3 Power-output and collector-efficiency measurements. The device shall be tested in the circuit of figure 4
using the procedure outlined on figure 5. The specified conditions shall be applied and the variable capacitors
adjusted to obtain maximum power output. When the maximum power output is obtained, the collector current shall
be measured and recorded. The collector efficiency shall be computed as follows:
PO (watts) x 100
η in percent =
28 x IC (amperes)
* 4.5.4 Burnout by pulsing. The devices shall be tested in the circuit of figure 6. The voltage source shall be
increased from zero until the specified current is reached. The current shall be maintained for the specified time.
10
MIL-PRF-19500/398F
4.5.5 Delta requirements. Delta requirements shall be as specified below:
Step
1.
Inspection
MIL-STD-750
Conditions
Bias condition D;
Symbol
Limit
Unit
Method
3036
Min
Max
Collector to
emitter cutoff
current
± 100 percent of initial
value or 2 µA dc,
whichever is grearer.
∆ICEO
(1)
VCE = 28 V dc
2.
Forward
current
transfer ratio
3076
3071
± 25 percent from initial
reading.
V
CE = 5 V dc,
∆hFE1
(1)
IC = 50 mA dc
(pulsed see 4.5.1)
3.
Collector to
emitter
voltage
± 50 mV dc change from
previous measured value.
IC = 100 mA dc,
IB = 10 mA dc,
(pulsed see 4.5.1)
∆VCE(sat)1
(1) (2)
(saturated)
(1) Devices which exceed group A limits shall be consider failures.
(2) JANS only.
11
MIL-PRF-19500/398F
*TABLE I. Group A inspection.
Inspection 1/
MIL-STD-750
Conditions
Symbol
Limits
Min Max
Unit
Method
2071
Subgroup 1 2/
Visual and mechanical
examination 3/
n = 45 devices, c = 0
Solderability 3/ 4/
2026
1022
n = 15 leads, c = 0
Resistance to solvents
3/ 4/ 5/
n = 15 devices, c = 0
Temp cycling 3/ 4/
Hermetic seal 4/
1051
1071
Test condition C, 25 cycles.
n = 22 devices, c = 0
n = 22 devices, c = 0
Fine leak
Gross leak
Electrical
Group A, subgroup 2
measurements 4/
Bond strength 3/ 4/
2037
Precondition TA = +250°C at t =
24 hrs or TA = +300°C at t = 2 hrs,
n = 11 wires, c = 0
Subgroup 2
Collector-emitter
breakdown voltage
3011
3001
3026
3041
3041
3076
Bias condition D; IC = 5 mA dc;
pulsed (see 4.5.1)
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICEO
30
60
V dc
V dc
V dc
Collector-base
breakdown voltage
Bias condition D; IC = 100 µA dc;
pulsed (see 4.5.1)
Emitter-base
breakdown voltage
3.5
Bias condition D; IE = 100 µA dc;
pulsed (see 4.5.1)
Collector-emitter cutoff
current
Bias condition D; VCE = 28 V dc
Bias condition C; VCE = 55 V dc
20
µA dc
µA dc
Collector-emitter cutoff
current
ICES1
100
Forward-current
VCE = 5.0 V dc; IC = 50 mA dc;
hFE1
transfer ratio
pulsed (see 4.5.1)
2N3866, 2N3866UB
2N3866A, 2N3866AUB
15
25
200
200
See footnote at end of table.
12
MIL-PRF-19500/398F
*TABLE I. Group A inspection - Continued.
Inspection 1/
MIL-STD-750
Conditions
Symbol
Limits
Min Max
Unit
Method
3076
Subgroup 2 continued
Forward-current
transfer ratio
2N3866, 2N3866UB
2N3866A, 2N3866AUB
V
CE
= 5.0 V dc; I = 360 mA dc;
h
FE2
C
pulsed (see 4.5.1)
5.0
8.0
Collector-emitter
saturated voltage
3071
I
= 100 mA dc; I = 10 mA dc;
V
CE(sat)
1.0
2.0
V dc
C
B
pulsed (see 4.5.1)
Subgroup 3
T
= +150°C
A
High temperature
operation
Collector to emitter
Cutoff current
3041
3076
Bias condition C; V
= 55 V dc
I
mA
dc
CE
CES2
Low temperature
operation
T
= -55°C
A
Forward-current
transfer ratio
2N3866, 2N3866UB
2N3866A, 2N3866AUB
V
= 5.0 V dc; I = 50 mA dc;
h
FE3
CE
C
pulsed (see 4.5.1)
7
12
Subgroup 4
Magnitude of small-
signal short-circuit
current transfer ratio
2N3866, 2N3866UB
2N3866A, 2N3866AUB
3306
3236
V
= 15 V dc; I = 50 mA dc; f =
C
h
CE
200 MHz
fe
2.5
4.0
8.0
7.5
Open circuit output
capacitance
V
V
= 28 V dc; I = 0
C
obo
3.5
2.0
pF
W
CB
E
Power output
= 28 V dc; P = 0.15 W; f =
in
P
P
η
1.0
0.5
45
CC
1out
400 MHz (see figure 4 and 4.5.3)
Power output
V
= 28 V dc; P = 0.075 W; f =
in
W
%
%
CC
400 MHz (see figure 4 and 4.5.3)
2out
Collector-efficiency
Collector-efficiency
See footnote at end of table.
V
= 28 V dc; P = 0.15 W; f =
in
CC
400 MHz (see 4.5.3)
1
V
= 28 V dc; P = 0.075 W; f =
in
40
η
CC
400 MHz (see 4.5.3)
2
13
MIL-PRF-19500/398F
* TABLE I. Group A inspection - Continued.
Inspection 1/
MIL-STD-750
Conditions
Symbol
Limits
Min Max
Unit
Method
Subgroups 5 and 6
Not applicable
Subgroup 7
Collector-emitter
3011
55
V dc
VBE = -1.5 V dc; IC = 40 mA dc (see
V(BR)CEX
breakdown voltage
(clamped inductive)
figure 7)
1/ For sampling plan see MIL-PRF-19500.
2/ For resubmission of failed subgroup A1, double the sample size of the failed test or sequence of tests. A failure
in group A, subgroup 1 shall not require retest of the entire subgroup. Only the failed test shall be rerun upon
submission.
3/ Separate samples may be used.
4/ Not required for JANS devices.
5/ Not required for laser marked devices.
14
MIL-PRF-19500/398F
* TABLE II. Group E inspection (all quality levels) - for qualification only.
MIL-STD-750
Inspection
Qualification
Method
Conditions
Subgroup 1
45 devices
c = 0
Temperature cycling
(air to air)
1051
1071
Test condition C, 500 cycles
Hermetic seal
Fine leak
Gross leak
Electrical measurements
Subgroup 2
See group A, subgroup 2 and 4.5.5 herein.
45 devices
c = 0
Intermittent life
1037
VCB = 10 V dc, 6000 cycles
Electrical measurements
Subgroup 3
See group A, subgroup 2 and 4.5.5 herein.
Not applicable
Subgroup 4
22 devices
c = 0
Thermal resistance
Subgroups 5, 6, and 7
Not applicable
3131
RθJC
Subgroup 8
45 devices
c = 0
Reverse stability
1033
Condition A for devices ≥ 400 V, condition B for devices <
400 V.
15
MIL-PRF-19500/398F
C , C , C = 3 - 35 pF.
1
2
5
C = 24 pF (see note).
3
C = 0.4 - 7 pF.
4
L = Straight piece number 16 bare tin wire, 0.625 inch long.
1
L = 3 turns number 16 wire, 0.250 inch ID, 0.312 inch long.
2
L = 1 turns number 18 wire, 0.250 inch ID, 0.022 inch long.
3
L = Ferrite RF choke, Z = 450 Ω.
4
NOTE: For optimum performance, C should be mounted as close as possible to base lead.
3
* FIGURE 4. Power - output test circuit (400 MHz).
16
MIL-PRF-19500/398F
NOTES:
1. Test fixture is the circuit as described on figure 4.
2. RF power source may be any unit capable of generating desired power level at desired frequency with
a harmonic and spurious content at least 20 dB below operating frequency level.
3. The RF isolator may be any device (pad, circulator, ect.) capable of establishing at least 20 dB of
isolation (RL > 20 dB) between RF source and test fixture.
4. Variable attenuators (or fixed if calibrated): Attenuator on directional coupler number 2 shall be
calculated against known working standard either by means of calibration chart or suitable adjustment
if variable. Attenuator at position "A" of directional coupler number 1 shall be calibrated or adjusted so
that actual power at test fixture is known. Attenuator at position "B" shall be adjusted to establish
sensitivity needed to measure VSWR.
5. RF switch may be eliminated if additional power meters are used.
PROCEDURE:
a. Remove "test fixture" and install jumper between directional coupler number 1 and directional coupler
number 2.
b. Set the RF switch to power output position "C".
c. Adjust frequency and power of RF source, as required by specification, and monitor frequency
counter and RF power meter respectively (see note 4).
d. Set the RF switch to position "A" and adjust variable attenuator to obtain identical reading as
power out in position "C" (see note 4).
e. Reconnect "test fixture" in test setup and insert device.
f. Adjust power supply to 28 V dc.
g. Adjust circuit output tuning for maximum power gain and circuit input tuning for maximum VSWR.
(Switch between power in; VSWR, and power out while tuning and repeat as many times as necessary
to obtain minimum VSWR and maximum power out. Check power in level before taking final reading.
Minimum VSWR is defined as minimum reading obtained on power meter with switch in position "B"
and maintaining power in.)
* FIGURE 5. RF power output (POUT) test procedure.
17
MIL-PRF-19500/398F
* FIGURE 6. Burnout by pulsing test circuit.
18
MIL-PRF-19500/398F
RBB1 = 150 Ω.
BB1 = 20 V dc.
V
K = s.p.s.t relay, 6 V ac coil (Clare Mercury Relay, model number HGP-1400, or equivalent).
RBB2 = 33 Ω.
VBB2 = 1.5 V dc.
RS = 1 Ω ± 1 percent, .5 watt (noninductive).
VCC = The voltage should be adjusted to approximately 17 volts.
L = 25 mH, 100 mA, 83 Ω resistive (Miller number 957, or equivalent).
Vclamp = 55 V (min).
V(BR)CEX clamped at 10 percent over rating.
* FIGURE 7. VBR(CEX) (clamped inductive) test circuit.
19
MIL-PRF-19500/398F
5. PACKAGING
5.1 Packaging. Packaging shall prevent mechanical damage of the devices during shipping and handling and
shall not be detrimental to the device. When actual packaging of materiel is to be performed by DoD personnel,
these personnel need to contact the responsible packaging activity to ascertain requisite packaging requirements.
Packaging requirements are maintained by the Inventory Control Points' packaging activity within the Military
Department or Defense Agency, or within the Military Departments' System Command. Packaging data retrieval is
available from the managing Military Departments' or Defense Agency's automated packaging files, CD-ROM
products, or by contacting the responsible packaging activity.
6. NOTES
(This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.)
* 6.1 Intended use. The notes specified in MIL-PRF-19500 are applicable to this specification.
* 6.2 Acquisition requirements. Acquisition documents must specify the following:
a. Title, number, and date of this specification.
b. Issue of DoDISS to be cited in the solicitation, and if required, the specific issue of individual documents
referenced (see 2.2).
c. Packaging requirements (see 5.1).
d. Lead finish (see 3.4.1).
e. Type designation and product assurance level.
f. For die acquisition, the JANHC or JANKC letter version shall be specified (see figure 3).
g. Surface mount designation if applicable.
6.3 Qualification. With respect to products requiring qualification, awards will be made only for products which
are, at the time of award of contract, qualified for inclusion in Qualified Manufacturers' List (QML) whether or not
such products have actually been so listed by that date. The attention of the contractors is called to these
requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the Federal
Government tested for qualification in order that they may be eligible to be awarded contracts or orders for the
products covered by this specification. Information pertaining to qualification of products may be obtained from
Defense Supply Center, Columbus, ATTN: DSCC/VQE, P.O. Box 3990, Columbus, OH 43216-5000.
* 6.4 Suppliers of JANHC and JANKC die. The qualified JANHC and JANKC suppliers with the applicable letter
version (example JANHCA2N3866) will be identified on the QML.
Die ordering information (1)
PIN
Manufacturer
34156
2N3866
2N3866A
JANHCA2N3866
JANHCA2N3866A
(1) For JANKC level, replace JANHC with JANKC.
20
MIL-PRF-19500/398F
*
6.5 Changes from previous issue. The margins of this specification are marked with asterisks to indicate where
changes from the previous issue were made. This was done as a convenience only and the Government assumes
no liability whatsoever for any inaccuracies in these notations. Bidders and contractors are cautioned to evaluate the
requirements of this document based on the entire content irrespective of the marginal notations and relationship to
the last previous issue.
Custodians:
Army - CR
Navy - EC
Air Force - 11
NASA - NA
DLA - CC
Preparing activity:
DLA - CC
(Project 5961-2574)
Review activities:
Army - AR, MI, SM
Navy - AS, MC
Air Force - 19, 99
21
STANDARDIZATION DOCUMENT IMPROVEMENT PROPOSAL
INSTRUCTIONS
1. The preparing activity must complete blocks 1, 2, 3, and 8. In block 1, both the document number and revision
letter should be given.
2. The submitter of this form must complete blocks 4, 5, 6, and 7.
3. The preparing activity must provide a reply within 30 days from receipt of the form.
NOTE: This form may not be used to request copies of documents, nor to request waivers, or clarification of requirements on
current contracts. Comments submitted on this form do not constitute or imply authorization to waive any portion of the referenced
document(s) or to amend contractual requirements.
1. DOCUMENT NUMBER
MIL-PRF-19500/398F
2. DOCUMENT DATE
23 January 2002
I RECOMMEND A CHANGE:
3. DOCUMENT TITLE
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-FREQUENCY TYPES 2N3866, 2N3866A, 2N3866UB,
2N3866AUB JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
4. NATURE OF CHANGE (Identify paragraph number and include proposed rewrite, if possible. Attach extra sheets as needed.)
5. REASON FOR RECOMMENDATION
6. SUBMITTER
a. NAME (Last, First, Middle initial)
b. ORGANIZATION
c. ADDRESS (Include Zip Code)
d. TELEPHONE (Include Area Code)
7. DATE SUBMITTED
COMMERCIAL
DSN
FAX
EMAIL
8. PREPARING ACTIVITY
b. TELEPHONE
Commercial
614-692-0510
a. Point of Contact
Alan Barone
DSN
850-0510
FAX
614-692-6939
EMAIL
alan_barone@dscc.dla.mil
c. ADDRESS
Defense Supply Center, Columbus
ATTN: DSCC-VAC
IF YOU DO NOT RECEIVE A REPLY WITHIN 45 DAYS, CONTACT:
Defense Standardization Program Office (DLSC-LM)
8725 John J. Kingman, Suite 2533, Fort Belvoir, VA 22060-6221
Telephone (703) 767-6888 DSN 427-6888
P.O. Box 3990
Columbus, OH 43216-5000
DD Form 1426, Feb 1999 (EG)
Previous editions are obsolete
WHS/DIOR, Feb 99
相关型号：
JANS2N3996
Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-111, Metal, 3 Pin, TO-111, 3 PIN
MICROSEMI
JANS2N3997
Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-111, Metal, 3 Pin, TO-111, 3 PIN
MICROSEMI
JANS2N3998
Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-111, Metal, 3 Pin, TO-111, 3 PIN
MICROSEMI
JANS2N3999
Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-111, Metal, 3 Pin, TO-111, 3 PIN
MICROSEMI
JANS2N4029
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-206AA, TO-18, 3 PIN
MICROSEMI
JANS2N4033UA
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, CERAMIC PACKAGE-3
MICROSEMI
JANS2N4033UB
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, CERAMIC PACKAGE-3
MICROSEMI
©2020 ICPDF网 联系我们和版权申明