JANTX2N6338 [ETC]
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 25A I(C) | TO-3 ; 晶体管| BJT | NPN | 100V V（ BR ） CEO | 25A I（C ） | TO- 3\n
| 型号： | JANTX2N6338 |
| 厂家： | 
ETC |
| 描述： | TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 25A I(C) | TO-3
|
| 文件： | 总17页 (文件大小：85K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
The documentation and process conversion
measures necessary to comply with this revision
shall be completed by 25 October 1999.
INCH-POUND
MIL-PRF-19500/509C
25 July 1999
SUPERSEDING
MIL-S-19500/509B
25 June 1993
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER
TYPES 2N6338 AND 2N6341
JAN, JANTX, JANTXV AND JANS
This specification is approved for use by all Depart-
ments and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for NPN, silicon power transistors. Four levels of product
assurance are provided for each device type as specified in MIL-PRF-19500.
1.2 Physical dimensions. See Figure 1, (similar to TO – 204AA formally TO - 3).
1.3 Maximum ratings.
Types
P
T
1/ 2/
P
T
V
CBO
V
CEO
V
EBO
I
C
I
B
T
and T
OP
STG
T
= +25°C
T
= +100°C
C
A
W
W
V dc
V dc
V dc
A dc
A dc
°C
2N6338
2N6341
200
200
112
112
120
180
100
150
6.0
6.0
25
25
10
10
-65 to +200
-65 to +200
1/ Between T = +25°C and T = +200°C, linear derating factor (average) = 1.14 W/°C.
C
C
2/ Maintain voltage and current according to the safe operating area shown in figure 4.
1.4 Primary electrical characteristics at T = 25°C.
A
Limit
h
FE1
1/
V
V
C
(
BE(SAT)
CE SAT)
obo
1 MHz £ f £ 1 MHz
= 10 V dc
I
= 25 A dc
I
= 10 A dc
I
= 10 A dc
= 1.0 V dc
I
= 25 A dc
I = 2.5 A dc
B
I
= 10 A dc
= 1.0 A dc
C
C
C
C
C
V
CB
V
CE
= 2.0 V dc
V
CE
= 2.0 V dc
I
B
I
B
I
E
= 0
V dc
V dc
V dc
pF
Min
Max
12
---
30
120
---
1.8
---
1.8
---
1.0
---
450
1/ Pulsed, (see 4.5.1).
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document
should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAC, 3990 East Broad St., Columbus, OH
43216-5000, by using the addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this
document or by letter.
AMSC N/A
FSC 5961
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
MIL-PRF-19500/509C
1.4 Primary electrical characteristics at T = 25°C - Continued.
A
Pulse response
|h
FE
|
Limit
f = 10 MHz
= 1.0 A dc
R
qJC
I
C
t
on
t
off
V
CE
= 10 V dc
ms
ms
°C/W
Minimum
Maximum
4
12
---
0.5
---
1.25
---
.875
2. APPLICABLE DOCUMENTS
2.1 Government documents.
2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This section does not include
documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has
been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements
documents cited in section 3 and 4 of this specification, whether or not they are listed.
2.1.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document
to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department
of Defense Index of Specifications and Standards (DODISS) and supplement thereto, cited in the solicitation (see 6.2).
SPECIFICATION
DEPARTMENT OF DEFENSE
MIL-PRF-19500
STANDARD
MILITARY
MIL-STD-750
- Semiconductor Devices, General Specification for.
-
Test Methods for Semiconductor Devices.
(Unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the Defense Automated
Printing Service, Building 4D (DPM-DODSSP), 700 Robbins Avenue, Philadelphia, PA 19111-5094.)
2.2 Order of precedence. In the event of a conflict between the text of this specification and the references cited herein (except for
associated detail specifications, specification sheets or MS standards), the text of this specification takes precedence. Nothing in this
specification, however, supersedes applicable laws and regulations unless a specific exemption has been obtained.
3. REQUIREMENTS
3.1 Associated specification. The individual item requirements shall be in accordance with MIL-PRF-19500, and as specified herein.
3.2 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-
19500.
3.3 Interface requirements and physical dimensions. The Interface requirements and physical dimensions shall be as specified in
MIL-PRF-19500 and figure 1 (similar to TO – 204AA formally TO - 3) herein.
2
MIL-PRF-19500/509C
FIGURE 1. Physical dimensions. (similar to TO – 204AA formally TO - 3)
3
MIL-PRF-19500/509C
Dimensions
Ltr
Notes
Inches
Millimeters
Min
Max
Min
Max
CD
CH
HR
0.875
0.360
0.525
0.188
22.23
9.14
0.250
0.495
0.131
6.35
12.57
3.33
13.33
4.78
4
4
HR
1
HT
LD
LL
0.060
0.038
0.312
0.135
0.043
0.500
0.050
1.52
0.97
7.92
3.43
1.09
12.7
1.27
4, 6
6
4
L
1
MHD
MHS
PS
0.151
1.177
0.420
0.205
1.65
1.197
0.440
0.225
3.83
29.90
10.67
5.21
41.91
30.40
11.18
5.72
3
3
PS
1
0.655
0.675
16.64
17.15
S
1
Notes
1, 2, 5, 7
1, 2, 5, 7
NOTES:
1. Dimensions are in inches.
2. Metric equivalents are given for general information only.
3. These dimensions should be measured at points 0.050 inch (1.27 mm) + 0.005 inch (0.13 mm) - 0.000 inch (0.00 mm)
below seating plane. When gauge is not used, measurement will be made at the seating plane.
4. Two places.
5. The seating plane of the header shall be flat within 0.001 inch (0.03 mm) concave to 0.004 inch (0.10 mm) convex inside a
0.930 inch (23.62 mm) diameter circle on the center of the header and flat within 0.001 inch (0.03 mm) concave to 0.006
inch (0.15 mm) convex overall.
6. Lead diameter shall not exceed twice LD within L .
1
7. Lead designation, shall be as follows:
Lead Number
1
2
Emitter
Base
Case
Collector
FIGURE 1. Physical dimensions (similar to TO – 204AA formally TO - 3) - Continued.
4
MIL-PRF-19500/509C
3.3.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750 and herein. Where a choice of
lead finish is desired, it shall be specified in the contract or purchase order (see 6.2).
3.4 Marking. Marking shall be in accordance with MIL-PRF-19500.
3.5 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as
specified in 1.3, 1.4, and table I herein.
3.6 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table I herein.
3.7 Qualification. Devices furnished under this specification shall be products that are authorized by the qualifying activity for listing
on the applicable qualified manufacturer’s list before contract award (see 4.2 and 6.3 ).
4.VERIFICATION
4.1 Classification of Inspections. The inspection requirements specified herein are classified as follows:
a. Qualification inspection (see 4.2).
b. Screening (see 4.3)
c. Conformance inspection (see 4.4).
4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500.
4.3 Screening. Screening shall be in accordance with table IV of MIL-PRF-19500, and as specified herein. The following
measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable.
Screen (see table IV
of MIL-PRF-19500)
Measurement
JANS level
JANTX and JANTXV levels
Not applicable
9
I
I
and h
FE2
CEX1
11
= 100 percent of initial value
I
and h
FE2
CEX1
CEX1
or 3 mA dc, whichever is greater;
Dh = ±25 percent of initial value.
FE2
12
13
See 4.3.1
See 4.3.1
Subgroups 2 and 3 of table I
Subgroup 2 of table I herein;
DI = 100 percent of initial value or
herein; DI
CEX1
initial value or 3 mA dc, whichever is greater;
= 100 percent of
CEX1
3 mA dc, whichever is greater;
Dh = ± 25 percent of initial value.
FE2
Dh = ± 25 percent of initial value.
FE2
4.3.1 Power burn-in conditions. Power burn-in conditions are as follows:
³ 20 V dc minimum; T = +187.5°C ± 12.5°C
V
CB
J
The selected I and V values used for burn-in should fall within the safe operating area outlined in figure 4.
CE
C
4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as specified herein. Group A
inspection shall be performed on each sublot.
4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500 and table I herein. Electrical
measurements (end-points) shall be in accordance with table I, subgroup 2 herein.
5
MIL-PRF-19500/509C
4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in
table VIa (JANS) and table VIb (JAN, JANTX, and JANTXV) of MIL-PRF-19500 and paragraphs 4.4.2.1 and 4.4.2.2 herein. Electrical
measurements (end-points) shall be in accordance with table I, subgroup 2 herein. Delta measurements shall be in accordance with
table II herein.
4.4.2.1 Group B inspection, table VIa (JANS) of MIL-PRF-19500.
Subgroup
B3
Method
2037
Condition
Test condition A, all internal leads for each device shall be pulled separately.
B4
B5
1037
1027
V
= 20 V dc, 2,000 cycles.
CE
CE
V
= 20 V dc minimum; T = +275°C minimum; t = 96 hours.
J
4.4.2.2 Group B inspection, table VIb (JAN, JANTX and JANTXV) of MIL-PRF-19500.
Subgroup
B3
Method
2037
Condition
Test condition A, all internal leads for each device shall be pulled separately.
B3
B3
1037
1027
For solder die attach: V
CE
³ 20 V dc, 2,000 cycles.
³ 20 V dc adjust P to achieve T = +175°C minimum.
For eutectic die attach: V
CE
T
J
4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in
table VII of MIL-PRF- and as follows. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. Delta
measurements shall be in accordance with table II herein.
4.4.3.1 Group C inspection, table VII of MIL-PRF-19500.
Subgroup
C2
Method
2036
Condition
Test condition A; weight = 10lbs.; time = 15 s.
C6
C3
1037
1027
For solder die attach: V
CE
³ 20 V dc, 6,000 cycles.
³ 20 V dc adjust P to achieve T = +175°C minimum.
For eutectic die attach: V
CE
T
J
4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows:
4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750.
4.5.2 Thermal resistance. Thermal resistance measurement shall be conducted in accordance with test method 3131 of MIL-STD-750.
The following details shall apply:
a. Collector current magnitude during power applications shall be 3.0 A dc.
b. Collector to emitter voltage magnitude shall be 10 V dc.
c. Reference temperature measuring point shall be the case.
d. Reference point temperature shall be 25°C £ t £ 75°C and recorded before the test is started.
r
e. Mounting arrangement shall be with heat sink to header.
f. Maximum limit for R
qJC
shall be 0.875°C/W.
6
MIL-PRF-19500/509C
TABLE I. Group A inspection.
Inspection 1/
Subgroup 1
MIL-STD-750
Conditions
Symbol
Limits
Unit
Method
2071
Min
Max
Visual and mechanical
examination
Subgroup 2
Breakdown voltage,
collector to emitter
3011
3041
Bias condition D, I = 50 mA dc
C
Pulsed (see 4.5.1)
V
(BR)CEO
2N6338
2N6341
100
150
V dc
V dc
Collector to emitter
cutoff current
Bias condition D,
50
mA dc
I
CEO
V
V
= 50 V dc
= 75 V dc
CE
2N6338
2N6341
CE
Emitter to base
cutoff current
3061
3041
100
mA dc
Bias condition D, V = 6 V dc
EB
I
EBO
collector to emitter
cutoff current
Bias condition A, V = -1.5 V dc
BE
I
CEX1
V
V
= 100 V dc
= 150 V dc
CB
2N6338
2N6341
10
10
mA dc
mA dc
CB
Collector to base
cutoff current
3036
3066
Bias condition D
I
CBO
V
V
= 120 V dc
= 180 V dc
CB
2N6338
2N6341
10
10
mA dc
mA dc
CB
Base to emitter
saturation voltage
1.8
V dc
Test condition A; I = 1.0 A dc;
V
BE(SAT)
B
I
C
= 10 A dc; pulsed (see 4.5.1)
Collector to emitter
saturation voltage
3071
3071
3076
3076
1.0
1.8
V dc
V dc
I
= 1.0 A dc; I = 10 A dc;
V
V
B
C
CE(SAT)1
pulsed (see 4.5.1)
Collector to emitter
saturation voltage
I
B
= 2.5 A dc; I = 25 A dc;
C
CE(SAT)2
pulsed (see 4.5.1)
Forward-current
transfer ratio
40
30
V
= 2 V dc; I = 0.5 A dc;
h
h
CE
C
FE1
pulsed (see 4.5.1)
Forward-current
transfer ratio
120
V
= 2 V dc; I = 10 A dc;
C
CE
pulsed (see 4.5.1)
FE2
See footnotes at end of table.
7
MIL-PRF-19500/509C
TABLE I. Group A inspection - Continued.
MIL-STD-750
Inspection 1/
Symbol
Limits
Unit
Method
Conditions
Min
12
Max
Subgroup 2 - Continued
V
CE
= 2 V dc; I = 25 A dc;
h
FE3
C
Forward-current
transfer ratio
3076
pulsed (see 4.5.1)
Subgroup 3 2/
T
= +150°C
A
High temperature operation:
I
CEX2
Collector to emitter
cutoff current
3041
Bias condition A, V = -1.5 V dc
BE
1.0
1.0
mA dc
mA dc
V
V
= 100 V dc
= 150 V dc
CE
2N6338
2N6341
CE
Low temperature
operation:
T
= -55°C
A
h
FE4
10
V
= 2.0 V dc; I = 10 A dc;
C
CE
Forward-current
transfer ratio
3076
3251
pulsed (see 4.5.1)
Subgroup 4
Pulse response
Test condition A, except test circuit
and pulse requirements in
accordance with figure 2.
Turn-on time
Turn-off time
Storage time
0.5
1.25
1.0
12
ms
ms
ms
V
» 80 V; I = 10 A dc
t
CC
C
on
I
B1
= 1.0 A dc
V
CC
» 80 V; I = 10 A dc
t
off
C
I
B1
= I = 1.0 A dc
B2
V
CC
» 80 V; I = 10 A dc
t
C
s
I
B1
= I = 1.0 A dc
B2
Magnitude of common
emitter, small-signal
short-circuit, forward-
current transfer ratio
3306
3236
4.0
V
= 10 V dc; I = 1.0 A dc;
|h
|
CE
f = 10 MHz
C
FE
Open capacitance
open circuit
450
pF
V
CB
= 10 V dc; I = 0;
C
obo
E
0.1 MHz £ f £ 1 MHz
See footnotes at end of table.
8
MIL-PRF-19500/509C
TABLE I. Group A inspection - Continued.
MIL-STD-750
Inspection 1/
Subgroup 5
Symbol
Limits
Unit
Method
Conditions
Min
Max
Safe operating area
(dc operation)
3051
T
= +25°C; t = 1 s;
C
1 cycle (see figure 3)
Test 1
(Both device types)
I
I
= 25 A dc; V = 8 V dc
CE
C
Test 2
(Both device types)
= 14 A dc; V = 14 V dc
CE
C
Test 3
I
I
= 100 mA dc; V = 100 V dc
CE
C
2N6338
= 66 mA dc; V = 150 V dc
CE
C
2N6341
Safe operating area
(switching)
3053
Load condition C; (unclamped
inductive load) see figure 4
T
= +25°C; duty cycle £ 10
C
percent; R = 0.1W;
s
t = t £ 500 ns
r
f
Test 1
Test 2
t
» 5 ms (vary to obtain I );
C
p
R
R
= 10 W; V = 20 V dc;
BB1
BB1
BB2
= ¥ ; V
=0;
= 50 V dc; I = 20 A dc
BB2
V
CC
L = 3 mH
C
t
p
» 5 ms (vary to obtain I );
C
R
R
= 100 W; V
= 10 V dc;
BB1
BB2
BB1
= ¥ ; V
BB2
=0;
V
= 50 V dc; I = 200 mA dc
C
CC
L = 10 mH
See footnotes at end of table.
9
MIL-PRF-19500/509C
TABLE I. Group A inspection - Continued.
MIL-STD-750
Inspection 1/
Symbol
Limits
Unit
Method
Conditions
Min
Max
Subgroup 5 - Continued
Safe operating area
3053
Clamped inductive load;
(switching)
T
= +25°C; duty cycle £ 5
A
percent; t » 1.5 ms (vary
p
to obtain I ); V
» 50 V dc;
C
CC
I
C
» 25 A dc; (see figure 5)
2N6338
2N6341
Clamped voltage = 100 V dc
Clamped voltage = 150 V dc
Electrical measurements
See table I, subgroup 2 herein.
1/ For sampling plan see MIL-PRF-19500.
2/ The sample units subjected to the high-temperature operation test shall be permitted to return to and be stabilized at room ambient
temperature prior to their being subjected to the low-temperature operation test.
10
MIL-PRF-19500/509C
TABLE II. Groups B and C delta electrical measurements. 1/ 2/ 3/
Step
1.
Inspection
MIL-STD-750
Conditions
Symbol
Limits
Unit
Method
3041
Min
Max
Collector to emitter
cutoff current
100 percent of initial value or 2
mA dc; whichever is greater.
Bias condition A; V = -1.5 V dc
BE
DI
CEX1
V
V
= 100 V dc
= 150 V dc
CE
2N6338
2N6341
CE
2.
Forward-current
transfer ratio
3076
±25 percent change from
previously measured value.
V
= 2 V dc; I =0.5 A dc;
Dh
FE1
CE
C
pulsed (see 4.5.1)
1/ The delta electrical measurements for table VIa (JANS) of MIL-PRF-19500 are as follows:
a. Subgroups 3, 4, and 5, .see table II herein, steps 1 and 2.
2/ The delta electrical measurements for table VIb (JAN, JANTX and JANTXV) of MIL-PRF-19500 are as follows:
a. Subgroups 3 and 6, see table II herein, step 2.
3/ The delta electrical measurements for table VII of MIL-PRF-19500 are as follows:
a. Subgroup 6, .see table II herein, step 1.
11
MIL-PRF-19500/509C
FIGURE 2. Switching time test circuits.
12
MIL-PRF-19500/509C
FIGURE 3. Maximum safe operating area graph (continuous dc) for types 2N6338 and 2N6341.
13
MIL-PRF-19500/509C
FIGURE 4. Safe operating area for switching between saturation and cutoff - unclamped inductive load.
14
MIL-PRF-19500/509C
Procedure:
1. With switch S closed, set the specified test conditions.
1
2. Open S . Device fails if clamp voltage not reached and maintained until the current returns to zero.
1
3. Perform specified end-point tests.
NOTES:
1. Either a clamping circuit or clamping diode may be used.
2. The coil used shall provide a minimum inductance of 5 mH at 25 A with a maximum dc resistance of .1W. For reference only: 4
Triad C-48U; (20 mH windings in parallel) or equivalent.
3.
R £ .1W, 12 W, 1 percent tolerance maximum (noninductive).
S
FIGURE 5. Clamped inductive sweep test circuit.
15
MIL-PRF-19500/509C
5. PACKAGING
5.1 Packaging. For acquisition purposes, the packaging requirements should be as specified in the contract or order (see 6.2). When
actual packaging of material is to be performed by DoD personnel, these personnel need to contact the responsible packaging activity to
ascertain requisite packaging requirements. Packaging requirements are maintained by the Inventory Control Points' packaging activity
within the Military Department or Defense Agency, or within the Military Departments' System Command. Packaging data retrieval is
available from the managing Military Departments' or Defense Agency's automated packaging files, CD-ROM products, or by contacting
the responsible packaging activity.
6. NOTES
(This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.)
6.1 Notes. The notes specified in MIL-PRF-19500 are applicable to this specification.
6.2 Acquisition requirements. Acquisition documents must specify the following:
a. Issue of DODISS to be cited in the solicitation (see 2.1.1).
b. The lead finish as specified (see 3.3.1).
c. Type designation and quality assurance level.
d. Packaging requirements (see 5.1).
6.3 Qualification. With respect to products requiring qualification, awards will be made only for products which are, at the time of
award of contract, qualified for inclusion in Qualified Manufacturer's List QML-19500 whether or not such products have actually been so
listed by that date. The attention of the contractors is called to these requirements, and manufacturers are urged to arrange to have the
products that they propose to offer to the Federal Government tested for qualification in order that they may be eligible to be awarded
contracts or purchase orders for the products covered by this specification. Information pertaining to qualification of products may be
obtained from Defense Supply Center Columbus, DSCC-VQE, Columbus, OH 43216.
6.4 Design and application guidance. The following PNP type transistors are complementary to the NPN devices listed herein.
Transistor (NPN)
2N6338
Complementary (PNP) transistor types
2N6437
2N6438
2N6341
6.5 Changes from previous issue. Asterisks are not used in this revision to identify changes with respect to the previous issue, due to
the extensiveness of the changes.
Custodians:
Army - CR
Air Force - 11
NASA - NA
DLA – CC
Preparing activity:
DLA - CC
(Project 5961-2070)
Review activities:
Air Force – 80, 99
16
STANDARDIZATION DOCUMENT IMPROVEMENT PROPOSAL
INSTRUCTIONS
1. The preparing activity must complete blocks 1, 2, 3, and 8. In block 1, both the document number and revision
letter should be given.
2. The submitter of this form must complete blocks 4, 5, 6, and 7.
3. The preparing activity must provide a reply within 30 days from receipt of the form.
NOTE: This form may not be used to request copies of documents, nor to request waivers, or clarification of
Requirements on current contracts. Comments submitted on this form do not constitute or imply authorization to
waive any portion of the referenced document(s) or to amend contractual requirements.
I RECOMMEND A CHANGE:
3. DOCUMENT TITLE
1. DOCUMENT NUMBER
MIL-PRF-19500/509C
2. DOCUMENT DATE (YYMMDD)
990725
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER TYPES 2N6338 AND 2N6341 JAN, JANTX, JANTXV AND JANS
4. NATURE OF CHANGE (Identify paragraph number and include proposed rewrite, if possible. Attach extra sheets as needed.)
5. REASON FOR RECOMMENDATION
6. SUBMITTER
a. NAME (Last, First, Middle initial)
b. ORGANIZATION
d. TELEPHONE (Include Area Code)
Commercial
DSN
c. ADDRESS (Include Zip Code)
7. DATE SUBMITTED
(YYMMDD)
FAX
EMAIL
8. PREPARING ACTIVITY
b. TELEPHONE
Commercial
a. Point of contact: Alan Barone,
DSN
FAX
EMAIL
614-692-0510
850-0510
614-692-6939
alan_barone@dscc.dla.mil
c. ADDRESS : Defense Supply Center
Columbus, ATTN: DSCC-VAC, 3990 East
Broad Street, Columbus, OH 43216-5000
IF YOU DO NOT RECEIVE A REPLY WITHIN 45 DAYS, CONTACT:
Defense Standardization Program Office (DLSC-LM)
8725 John J. Kingman, Suite 2533, Fort Belvoir, VA 22060-6221
Telephone (703) 767-6888 DSN 427-68880
DD Form 1426, Feb 1999 (EG)
Previous editions are obsolete
WHS/DIOR, Feb 99
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