JANTX2N6378 [ETC]
TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 50A I(C) | TO-3 ; 晶体管| BJT | PNP | 100V V（ BR ） CEO | 50A I（C ） | TO- 3\n
| 型号： | JANTX2N6378 |
| 厂家： | 
ETC |
| 描述： | TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 50A I(C) | TO-3
|
| 文件： | 总16页 (文件大小：94K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
The documentation and process conversion
measures necessary to comply with this revision
shall be completed by 25 October 1999
INCH-POUND
MIL-PRF-19500/515C
25 July 1999
SUPERSEDING
MIL-S-19500/515B
15 March 1993
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, POWER
TYPE 2N6378, 2N6379 JAN, JANTX, JANTXV, JANC AND JANHC
This specification is approved for use by all Depart-
ments and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for PNP silicon, power transistors. Three levels of product
assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance for each
unencapsulated device type.
1.2 Physical dimensions. See figure 1 (TO-3); figure 2 (JANC and JANHC).
1.3 Maximum ratings.
Types
P
T
P
T
V
CBO
V
CEO
V
EBO
I
B
I
C
T
and T
STG
J
T
= +25°C 1/
T
= +100°C 1/
C
C
W
W
V dc
V dc
V dc
A dc
A dc
°C
2N6378
2N6379
250
250
143
143
120
140
100
120
6
6
20
20
50
50
-65 to +200
-65 to +200
1/ Between T = +25°C and T = +200°C, linear derating factor (average) = 1.43 W/°C.
C
C
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document
should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAC, 3990 East Broad St., Columbus, OH
43216-5000, by using the addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this
document or by letter.
AMSC N/A
FSC 5961
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
MIL-PRF-19500/515C
1.4 Primary electrical characteristics. at T = +25°C unless otherwise specified.
C
h
FE3
h
FE2
V
V
CE(sat)
BE(sat)
R
qJC
V
= 4 V dc
V
= 4 V dc
I
= 20 A dc
= 2 A dc
I = 20 A dc
C
I = 2 A dc
B
CE
CE
C
I
C
= 50 A dc
I
C
= 20 A dc
I
B
1/
1/
V dc
Max
1.8
V dc
Max
1.0
°C/W
Min
10
10
Max
Min
30
30
Max
120
120
Min
Min
2N6378
2N6379
0.7
0.7
1.8
1.0
C
Pulse response
|h
fe
|
obo
V
= 10 V dc
V = 10 V dc
CE
I = 1 A dc
C
t
on
t
off
CB
I
= 0
E
f = 10 MHz
0.1 MHz £ f
£ 1 MHz
pF
ms
ms
Max
Max
Min
Max
Min
Max
1500
1500
2N6378
2N6379
3
3
12
12
0.5
0.5
1.05
1.05
1/ Pulsed (see 4.5.1).
2. APPLICABLE DOCUMENTS
2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This section does not include
documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has
been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements
documents cited in section 3 and 4 of this specification, whether or not they are listed.
2.1.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document
to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department
of Defense Index of Specifications and Standards (DODISS) and supplement thereto, cited in the solicitation (see 6.2).
SPECIFICATION
DEPARTMENT OF DEFENSE
MIL-PRF-19500
STANDARD
MILITARY
MIL-STD-750
- Semiconductor Devices, General Specification for.
-
Test Methods for Semiconductor Devices.
(Unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the Defense Automated
Printing Service, Building 4D (DPM-DODSSP), 700 Robbins Avenue, Philadelphia, PA 19111-5094.)
2.2 Order of precedence. In the event of a conflict between the text of this specification and the references cited herein (except for
associated detail specifications, specification sheets or MS standards), the text of this specification takes precedence. Nothing in this
specification, however, supersedes applicable laws and regulations unless a specific exemption has been obtained.
3. REQUIREMENTS
3.1 Associated specification. The individual item requirements shall be in accordance with MIL-PRF-19500, and as specified herein.
2
MIL-PRF-19500/515C
Dimensions
Millimeters
Ltr
Notes
Inches
Max
Min
Min
Max
CD
CH
HR
HR1
HT
0.875
0.380
0.525
0.188
0.135
0.050
0.063
0.500
0.161
1.197
0.440
0.225
0.675
22.22
9.65
3
0.270
0.495
0.131
0.060
6.86
12.57
3.33
13.34
4.78
1.52
3.43
L1
1.27
5, 9
5, 9
5
LD
0.057
0.312
0.151
1.177
0.420
0.205
0.655
0.97
7.92
1.09
LL
12.70
4.09
MHD
MHS
PS
3.84
7
29.90
10.67
5.21
30.40
11.18
5.72
4
4, 5
4
PS1
S
16.64
17.14
NOTES:
1. Dimensions are in inches.
2. Metric equivalents are given for general information only.
3. Body contour is optional within zone defined by CD
4. These dimensions shall be measured at points 0.050 (1.27 mm) to 0.055 (1.40 mm) below seating plane. When gauge is not
used, measurement shall be made at seating plane.
5. Both terminals.
6. At both ends.
7. Two holes.
8. Terminal 1 is the emitter, terminal 2 is base. The collector shall be electrically connected to the case.
9. LD applies between L1 and LL. Diameter is uncontrolled in L1.
10. In accordance with ANSI Y14.5M, diameters are equivalent to f x symbology.
FIGURE 1. Physical dimensions (T0-3).
3
MIL-PRF-19500/515C
Dimensions
Inches Millimeters
Ltr
Min
Max
0.235
0.235
Min
5.87
5.87
Max
5.97
5.97
A
C
0.231
0.231
NOTES:
1. Dimensions are in inches.
2. Metric equivalents are given for general information only.
3. Unless otherwise specified, tolerance is ± 0.005 inches (0.13 mm).
4. The physical characteristics of the die are:
Thickness: 0.008 inches (0.20 mm) to 0.012 inches (0.30 mm).
Top metal: Aluminum 40,000 D minimum, 50,000 D nominal.
Back metal: Gold 2,500 D minimum, 3,000 D nominal.
Back side: Collector.
Bonding pad:
B = 0.016 inches (0.41 mm) x 0.060 inches (1.52 mm).
E = 0.016 inches (0.41 mm) x 0.070 inches (1.78 mm).
FIGURE 2 Physical dimensions JANC and JANHC die.
4
MIL-PRF-19500/515C
3.2 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-
19500.
3.3 Interface requirements and physical dimensions. The Interface requirements and physical dimensions shall be as specified in
MIL-PRF-19500 and figures 1 (TO-3); and figure 2 (JANC and JANHC).
3.3.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750 and herein. Where a choice of
lead finish is desired, it shall be specified in the contract or purchase order (see 6.2).
3.4 Marking. Marking shall be in accordance with MIL-PRF-19500.
3.5 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as
specified in 1.3, 1.4, and table I herein.
3.6 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table I herein.
3.7 Qualification. Devices furnished under this specification shall be products that are authorized by the qualifying activity for listing
on the applicable qualified manufacturer’s list before contract award (see 4.2 and 6.4 ).
4.VERIFICATION
4.1 Classification of Inspections. The inspection requirements specified herein are classified as follows:
a. Qualification inspection (see 4.2).
b. Screening (see 4.3)
c. Conformance inspection (see 4.4).
4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500.
4.3 Screening (JANTX and JANTXV levels only). Screening shall be in accordance with table IV of MIL-PRF-19500 and as specified
herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein
shall not be acceptable.
Screen (see table IV
of MIL-PRF-19500)
Measurements
JANTX, JANTXV levels
1/
Thermal response (see 4.3.3) or SOA manufacturers option.
11
I
and h
FE2
CEX1
12
13
See 4.3.2, MIL-STD-750, method 1039, test condition B.
Subgroup 2 of table I herein;
DI
= 100 percent of initial value or 2 mA dc, whichever is
= ± 25 percent of initial value.
CEX1
greater.
Dh
FE2
1/ This test shall be performed anytime between screens 3 and 9.
4.3.1 Screening (JANC and JANHC) die. Screening of JANC and JANHC die shall be in accordance with MIL-PRF-19500. As a
minimum, die shall be 100 percent probed to insure the assembled chips will meet the requirements of group A, subgroup 2.
4.3.2 Power burn-in conditions. Power burn-in conditions are as follows:
T
= + 187.5 °C, ± 12.5 °C; V
³ 20 V dc; T
CB A £ 35°C.
J
5
MIL-PRF-19500/515C
4.3.3 Thermal response (DV ) measurements. The DV measurements shall be performed in accordance with method 3131 of
BE BE
MIL-STD-750. The DV conditions (I and V ) and maximum limit shall be derived by each vendor. The chosen DV measurement
BE BE
H
H
and conditions for each device in the qualification lot shall be submitted in the qualification report and a thermal response curve shall be
plotted. The chosen V shall be plotted. The chosen V shall be considered final after the manufacturer has had the opportunity to test
BE BE
five consecutive lots. One hundred percent safe operating area (SOA) testing may be performed in lieu of thermal response testing
herein provided that the appropriate conditions of temperature, time current and voltage to achieve die attach integrity are submitted to the
qualifying activity. The following parameter measurements shall apply:
a. I ................................................................................................................. 20 mA.
M
b. V measurement voltage........................................................................... 10 V (same as V ).
CE
H
c. I collector heating current .......................................................................... 5 A (minimum).
H
d. V collector-emitter heating voltage............................................................. 10 V (minimum).
H
e. t heating time............................................................................................. 100 ms.
H
f. t
MD
measurement delay time........................................................................ 50 ms to 80 ms (maximum).
sample window time ............................................................................. 10 ms (maximum).
g. t
SW
4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500, and as specified herein.
4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500, and table I herein. Electrical
measurements (end-points) shall be in accordance with subgroup 2 of table I herein.
4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in
table VIb (JAN, JANTX, and JANTXV) of MIL-PRF-19500. . Electrical measurements (end-points) shall be in accordance with subgroup
2 of table I herein. Delta measurements shall be in accordance with table II herein.
4.4.2.1 Group B inspection, table VIb (JAN, JANTX and JANTXV) of MIL-PRF-19500.
Subgroup
B3
Method
1037
Condition
For solder die attach: V
³ 20 V dc, 2,000 cycles.
CE
B3
B5
1027
3131
For eutectic die attach: V
³ 20 V dc adjust P to achieve T = +175°C minimum.
CE T J
See 4.5.2 herein.
4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in
table VII of MIL-PRF-19500. Electrical measurements (end-points) shall be in accordance with subgroup 2 of table I herein. Delta
measurements shall be in accordance with table II herein.
Subgroup
C2
Method
2036
Condition
Test condition A; weight = 10 pounds; time = 15 s.
C6
C3
1037
1027
For solder die attach: V ³ 20 V dc, 6,000 cycles.
CE
For eutectic die attach: V
CE
³ 20 V dc adjust P to achieve T = +175°C minimum.
T J
4.5 Method of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.
4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750.
6
MIL-PRF-19500/515C
4.5.2 Thermal resistance. Thermal resistance measurements shall be conducted in accordance with method 3131 of MIL-STD-750.
The following details shall apply:
a.
b.
c.
Collector current magnitude during power application shall be 5 A dc.
Collector to emitter voltage magnitude shall be ³ 10 V dc.
Reference temperature measuring point shall be the case.
d.
e.
Reference point temperature shall be 25°C £ T £ 75°C and recorded before the test is started.
R
Mounting arrangement shall be with heat sink to header.
f.
Maximum limit of R
shall be 0.7°C/W.
qJC
7
MIL-PRF-19500/515C
TABLE I. Group A inspection.
Inspection 1/
Subgroup 1
MIL-STD-750
Conditions
Symbol
Limit
Unit
Method
2071
Min
Max
Visual and mechanical
examination
Subgroup 2
Collector to emitter
breakdown voltage
3011
Bias condition D, I = 50 mA dc;
C
Pulsed (see 4.5.1)
V
V dc
(BR)CEO
2N6378
2N6379
100
120
Collector to emitter
cutoff current
3041
3041
Bias condition D
I
50
10
mA dc
mA dc
CEO
V
CE
V
CE
= 50 V dc
= 70 V dc
2N6378
2N6379
Collector to emitter cutoff
current
Bias condition A; V
BE
= 1.5 V dc
I
CEX1
2N6378
2N6379
V
CE
V
CE
= 120 V dc
= 140 V dc
Emitter-base cutoff current
3061
3036
Bias condition D, V
Bias condition D,
= 6 V dc
I
100
10
mA dc
mA dc
EB
EBO
Collector to base cutoff
current
I
CBO
V
CB
V
CB
= 120 V dc
= 140 V dc
2N6378
2N6379
Forward-current transfer ratio
Forward-current transfer ratio
Forward-current transfer ratio
3076
3076
3076
3071
V
= 4 V dc; I = 1 A dc;
h
h
h
50
30
10
CE
C
FE1
FE2
FE3
Pulsed (see 4.5.1)
V
CE
= 4 V dc; I = 20 A dc;
120
1.0
C
Pulsed (see 4.5.1)
V
= 4 V dc; I = 50 A dc;
C
CE
Pulsed (see 4.5.1)
Collector to emitter saturated
voltage
I
C
I
B
= 20 A dc; pulsed (see 4.5.1)
= 2.0 A dc
V
V
V dc
CE(sat)1
CE(sat)2
Collector to emitter saturated
voltage
3071
3066
I
C
= 50 A dc; I = 10 A dc;
3.0
1.8
V dc
V dc
B
Pulsed (see 4.5.1)
Base –emitter saturated
voltage
Test condition A; I = 20 A dc; I = 2.0
V
BE(sat)
C
B
A dc; pulsed (see 4.5.1)
See footnote at end of table.
8
MIL-PRF-19500/515C
TABLE I. Group A inspection - Continued.
Inspection 1/
MIL-STD-750
Conditions
Symbol
Limit
Unit
Method
3041
Min
Max
1.0
Subgroup 3
High-temperature operation:
T
= +150°C
A
Collector to emitter cutoff
current
I
mA dc
CEX2
Bias condition A; V
BE
= -1.5 V dc
V
CE
V
CE
= 120 V dc
= 140 V dc
2N6378
2N6379
Low-temperature operation:
T
V
= -55°C
A
Forward-current transfer
ratio
3076
3251
h
FE4
10
= 4.0 V dc I = 20 A dc;
CE
C
Pulsed (see 4.5.1)
Subgroup 4
Pulse response:
Test condition A, except test circuit and
pulse requirements in accordance with
figure 3 herein.
Turn-on time
Turn-off time
V
= approximately 80 V dc;
0.5
1.05
12
ms
ms
CC
t
t
on
I
C
= 20 A dc; I = 2.0 A dc;
B
V
CC
= approximately 80 V dc;
off
I
C
= 20 A dc; I = I
B1 B2 = 2.0 A dc
Magnitude of common
emitter small-signal short-
circuit forward- current
transfer ratio
3306
3236
V
CE
= 10 V dc; I = 1 A dc; f = 10 MHz
|h
|
3
C
fe
Open capacitance
(open circuit)
V
CB
= 10 V dc; I = 0;
C
1500
pF
E
obo
0.1 MHz < f < 1.0 MHz
Subgroup 5
Safe operating area
(dc operation)
3051
T
= +25°C t = 1 s; 1 cycle;
C
(See figure 4)
Test 1
(Both device types)
V
= 5 V dc; I = 50 A dc
C
CE
CE
Test 1
(Both device types)
V
= 8.6 V dc; I = 29 A dc
C
See footnote at end of table.
9
MIL-PRF-19500/515C
TABLE I. Group A inspection - Continued.
Inspection 1/
MIL-STD-750
Conditions
Symbol
Limit
Unit
Method
Min
Max
Subgroup 5 - Continued
Test 3
2N6378
2N6379
V
CE
V
CE
= 80 V dc; I = 165 mA dc
C
= 100 V dc; I = 130 mA dc
C
Safe operating area
(switching)
3053
Load condition C, (unclamped inductive
load) (see figure 5)
T
= + 25°C; duty cycle £ 10 percent;
C
R = 0.1 ohms; t = t £ 500 ns
s
r
f
Test 1
t
p
approximately 5 ms (vary to obtain I
;
C)
R
R
= 2 ohms; V
=12 V dc;
BB1
BB2
BB1
= ¥ ; V
BB2
= 0 V; I = 40 A dc; V
C
CC
= 50 V dc; L = 100 mH; (4 each Miller type
7827 in parallel, 40 A), 0.04 ohm, or
equivalent)
Test 2
t
p
approximately 5 ms (vary to obtain I ;)
C
R
R
= 120ohms; V
BB1
=12 V dc;
BB1
= ¥ ; V
BB2
= 0 V; V
CC
= 50 V dc; I
BB2
C
= 850 mA dc; L = 100 mH; (= 80 + 20 mH
2 each Triad Transformer C-48u, in
series), 0.713 ohm, or equivalent.
Safe operating area
(switching)
3053
Clamped inductive load T = + 25°C; duty
A
cycle £ 5 percent; t approximately 1.5 ms
p
(vary to obtain I ) V
=50 V dc;
C
CC
I
C
= 50 A dc; V
=12 V dc;
BB1
V
= 1.5 V; R
= 2 ohms;
= 100 ohms; R £ 0.1 ohms; L = 370
BB2
BB1
R
BB2
s
mH (Miller 7827 or equivalent)
Clamp voltage = 100 V dc
Clamp voltage = 120 V dc
Table I, subgroup 2 herein.
2N6378
2N6379
Electrical measurements
Subgroups 6 and 7
Not applicable
1/ For sampling plan, see MIL-PRF 19500.
10
MIL-PRF-19500/515C
TABLE II. Groups A, B, and C delta electrical measurements. 3/ 4/
Steps
1.
Inspection 1/
MIL-STD-750
Conditions
Symbol
Limits
Unit
Method
3041
Min
Max
Collector to emitter
cutoff current
100 percent of
initial value or 2
mA, whichever is
greater.
Bias condition A; V = +1.5 V dc
BE
DI
CEX1
2/
V
V
= 60 V dc
= 80 V dc
CE
2N6378
2N6379
CE
2.
3.
4.
Forward - current
transfer ratio
3076
3071
3131
± 25 percent
change from initial
reading.
V
= 4 V dc; I = 20 A dc;
Dh
FE2
CE
C
pulsed (see 4.5.1)
Collector to emitter
voltage (saturated)
± 50 mV change
from previously
measured value.
I
C
= 2.0 A dc; I = 20 A dc, pulsed
DV
DV
B
CE(sat)1
BE
(see 4.5.1)
Thermal response
See 4.3.3
1/ See MIL-PRF-19500 for sampling plan.
2/ Devices which exceed the group A limits for this test shall not be acceptable.
3/ The delta electrical measurements for table VIb (JAN, JANTX and JANTXV) of MIL-PRF-19500 are as follows:
a. Subgroup 4, see table II herein, step 4.
b. Subgroup 6, see table II herein, steps 1 and 2.
4/ The delta electrical measurements for table VII of MIL-PRF-19500 are as follows:
a. Subgroup 2 and 3, see table II herein, step 1.
b. Subgroup 6, see table II herein, steps 2, 3 and 4.
11
MIL-PRF-19500/515C
FIGURE 3. Pulse response test circuit.
12
MIL-PRF-19500/515C
FIGURE 4. Maximum safe operating graph (continuous dc).
13
MIL-PRF-19500/515C
5
FIGURE 5. Safe operating area for switching between saturation and cutoff (unclamped inductive load).
14
MIL-PRF-19500/515C
PACKAGING
5.1 Packaging. For acquisition purposes, the packaging requirements should be as specified in the contract or order (see 6.2). When
actual packaging of material is to be performed by DoD personnel, these personnel need to contact the responsible packaging activity to
ascertain requisite packaging requirements. Packaging requirements are maintained by the Inventory Control Points' packaging activity
within the Military Department or Defense Agency, or within the Military Departments' System Command. Packaging data retrieval is
available from the managing Military Departments' or Defense Agency's automated packaging files, CD-ROM products, or by contacting
the responsible packaging activity.
6. NOTES
(This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.)
6.1 Notes. The notes specified in MIL-PRF-19500 are applicable to this specification.
6.2 Acquisition requirements. Acquisition documents must specify the following:
a. Issue of DODISS to be cited in the solicitation (see 2.1.1).
b. The lead finish as specified (see 3.3.1).
c. Type designation and quality assurance level.
d. Packaging requirements (see 5.1).
e. For die acquisition, the letter version shall be specified (see figure 2).
6.3 Suppliers of JANC or JANHC die. The qualified JANC or JANHC suppliers with the applicable letter version (example, JANCA)
will be identified on the QML.
JANC or JANHC ordering information
Manufacturer
PIN
33178
2N6378
2N6379
A6378
A6379
6.4 Qualification. With respect to products requiring qualification, awards will be made only for products which are, at the time of
award of contract, qualified for inclusion in Qualified Manufacturer's List QML-19500 whether or not such products have actually been so
listed by that date. The attention of the contractors is called to these requirements, and manufacturers are urged to arrange to have the
products that they propose to offer to the Federal Government tested for qualification in order that they may be eligible to be awarded
contracts or purchase orders for the products covered by this specification. Information pertaining to qualification of products may be
obtained from Defense Supply Center Columbus, DSCC-VQE, Columbus, OH 43216.
6.5 Changes from previous issue. Marginal notations are not used in this revision to identify changes with respect to the previous
issue due to the extent of the changes.
Custodians:
Army – CR
Navy – EC
Air Force - 11
DLA – CC
Preparing activity:
DLA-CC
(Project 5961-2073)
Review activities:
Army – AV, MI, SM
Navy – AS, CG, MC, SH
Air Force - 13, 19, 99
15
STANDARDIZATION DOCUMENT IMPROVEMENT PROPOSAL
INSTRUCTIONS
1. The preparing activity must complete blocks 1, 2, 3, and 8. In block 1, both the document number and revision
letter should be given.
2. The submitter of this form must complete blocks 4, 5, 6, and 7.
3. The preparing activity must provide a reply within 30 days from receipt of the form.
NOTE: This form may not be used to request copies of documents, nor to request waivers, or clarification of
Requirements on current contracts. Comments submitted on this form do not constitute or imply authorization to
waive any portion of the referenced document(s) or to amend contractual requirements.
I RECOMMEND A CHANGE:
3. DOCUMENT TITLE
1. DOCUMENT NUMBER
MIL-PRF-19500/515C
2. DOCUMENT DATE (YYMMDD)
990725
SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, POWER TYPES 2N6378, 2N6379 JAN, JANTX, JANTXV, JANC AND JANHC
4. NATURE OF CHANGE (Identify paragraph number and include proposed rewrite, if possible. Attach extra sheets as needed.)
5. REASON FOR RECOMMENDATION
6. SUBMITTER
a. NAME (Last, First, Middle initial)
b. ORGANIZATION
d. TELEPHONE (Include Area Code)
Commercial
DSN
c. ADDRESS (Include Zip Code)
7. DATE SUBMITTED
(YYMMDD)
FAX
EMAIL
8. PREPARING ACTIVITY
b. TELEPHONE
Commercial
a. Point of contact: Alan Barone,
DSN
FAX
EMAIL
614-692-0510
850-0510
614-692-6939
alan_barone@dscc.dla.mil
c. ADDRESS : Defense Supply Center
Columbus, ATTN: DSCC-VAC, 3990 East
Broad Street, Columbus, OH 43216-5000
IF YOU DO NOT RECEIVE A REPLY WITHIN 45 DAYS, CONTACT:
Defense Standardization Program Office (DLSC-LM)
8725 John J. Kingman, Suite 2533, Fort Belvoir, VA 22060-6221
Telephone (703) 767-6888 DSN 427-68880
DD Form 1426, Feb 1999 (EG)
Previous editions are obsolete
WHS/DIOR, Feb 99
相关型号：
JANTX2N6379
Power Bipolar Transistor, 50A I(C), 120V V(BR)CEO, PNP, Silicon, TO-3, Metal, 2 Pin,
MICROSEMI
JANTX2N6603
RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, L Band, Silicon, NPN
MOTOROLA
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