JANTXV2N5238 [ETC]
TRANSISTOR | BJT | NPN | 170V V(BR)CEO | 5A I(C) | TO-5 ; 晶体管| BJT | NPN | 170V V（ BR ） CEO | 5A I（C ） | TO- 5\n
| 型号： | JANTXV2N5238 |
| 厂家： | 
ETC |
| 描述： | TRANSISTOR | BJT | NPN | 170V V(BR)CEO | 5A I(C) | TO-5
|
| 文件： | 总21页 (文件大小：100K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
The documentation and process conversion
measures necessary to comply with this revision
shall be completed by 5 October 2002.
INCH-POUND
MIL-PRF-19500/394G
5 July 2002
SUPERSEDING
MIL-PRF-19500/394F
23 April 2001
PERFORMANCE SPECIFICATION
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER SWITCHING
TYPES: 2N4150, 2N5237, 2N5238, 2N4150S, 2N5237S, AND 2N5238S
JAN, JANTX, JANTXV, JANS, JANHC AND JANKC
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for NPN, silicon, low-power, high voltage
transistors. Four levels of product assurance are provided for each encapsulated device type as specified in
MIL-PRF-19500 and two levels of product assurance are provided for each unencapsulated device type.
1.2 Physical dimensions. See figure 1 (TO- 5) and figures 2 and 3 (JANHC and JANKC).
1.3 Maximum ratings.
Types
P
T
P
V
CBO
V
CEO
V
EBO
I
T
and
RqJC
(max)
RqJA
(min)
T (1)
T (2)
C
STG
T
=
T
= +25°C
A
J
C
+25°C
W
W
V dc
V dc
V dc
A dc
°C
°C/mW
°C/mW
2N4150, S
2N5237, S
2N5238, S
1.0
1.0
1.0
5.0
5.0
5.0
100
150
200
70
120
170
10
10
10
10
10
10
-65 to +200
-65 to +200
-65 to +200
.020
.020
.020
.175
.175
.175
(1) Derate linearly 5.7 mW/°C for TA > +25°C.
(2) Derate linearly 50 mW/°C for TC > +100°C.
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in
improving this document should be addressed to: Defense Supply Center, Columbus, ATTN: DSCC-VAC, P.O.
Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD Form
1426) appearing at the end of this document or by letter.
AMSC N/A
FSC 5961
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
MIL-PRF-19500/394G
1.4 Primary electrical characteristics.
hFE2 (1)
hFE3 (1)
Cobo
hfe
VBE(sat) (1)
VCE(sat)
Limits
IC = 5 A dc
VCE = 5 V dc VCE = 5 V dc
IC = 10 A dc
IE = 0
VCB = 10 V dc
100 kHz £ f £ 1 MHz
pF
IC = 0.2 A dc
VCE = 10 V dc
f = 10 MHz
IC = 5 A dc
IB = 0.5 A dc
IC = 5 A dc
IB = 0.5 A dc
V dc
1.5
V dc
0.6
Min
Max
40
120
10
1.5
7.5
350
(1) Pulsed, (see 4.5.1).
2. APPLICABLE DOCUMENTS
2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This
section does not include documents cited in other sections of this specification or recommended for additional
information or as examples. While every effort has been made to ensure the completeness of this list, document
users are cautioned that they must meet all specified requirements documents cited in sections 3 and 4 of this
specification, whether or not they are listed.
2.2 Government documents.
2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a
part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are
those listed in the issue of the Department of Defense Index of Specifications and Standards (DODISS) and
supplement thereto, cited in the solicitation (see 6.2).
SPECIFICATION
DEPARTMENT OF DEFENSE
MIL-PRF-19500 - Semiconductor Devices, General Specification for.
STANDARD
DEPARTMENT OF DEFENSE
MIL-STD-750 - Test Methods for Semiconductor Devices.
(Unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the
Document Automation and Production Services (DAPS), Building 4D (DPM–DODSSP), 700 Robbins Avenue,
Philadelphia, PA 19111-5094.)
2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited
herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws
and regulations unless a specific exemption has been obtained.
2
MIL-PRF-19500/394G
FIGURE 1. Physical dimensions .
3
MIL-PRF-19500/394G
Dimensions
Symbol
Inches
Millimeters
Min
7.75
6.10
0.23
8.51
Notes
5
Min
.305
.240
.009
.335
Max
.335
.260
.041
.370
Max
8.51
6.60
1.04
9.40
CD
CH
h
HD
LC
LD
LL
LU
L1
L2
Q
r
TL
TW
a
.200 TP
5.08 TP
6
7
.016
.016
.250
.021
0.41
0.53
See notes 14 and 15
0.41
.019
.050
0.48
1.27
7
7
6.35
7
13
11,12
3
10
4, 6, 8, 9
.050
.010
.045
.034
1.27
0.25
1.14
0.86
.029
.028
0.74
0.71
45° TP
45° TP
NOTES:
1. Dimensions are in inches.
2. Metric equivalents are given for general information only.
3. Symbol TL is measured from HD maximum.
4. Lead number 4 omitted on this variation.
5. CD shall not vary more than .010 inch (0.25 mm) in zone P. This zone is controlled for automatic handling.
6. Leads at gauge plane .054 inch (1.37 mm) + .001 (0.03 mm) - .000 inch (0.00 mm) below seating plane shall
be within .007 inch (0.18 mm) radius of true position (TP) relative to the tab. The device may be measured by
direct methods.
7. LD applies between L1 and L2. Dimension LD applies between L2 and LL minimum. Lead diameter shall
not exceed .042 inch (1.07 mm) within L1 and beyond LL minimum.
8. Lead designation is as follows: 1 - emitter; 2 - base; 3 - collector.
9. Lead number three is electrically connected to case.
10. Beyond r maximum, TW shall be held for a minimum length of .011 inch (0.28 mm).
11. r (radius) applies to both inside corners of tab.
12. Tab shown omitted.
13. Details of outline in this zone optional.
14. For transistor types 2N4150S, 2N5237S, and 2N5238S, dimension LL = 0.500 inch (12.70 mm) minimum,
and 0.750 inch mm) maximum.
15. For transistor types 2N4150, 2N5237, and 2N5238, dimension LL = 1.500 inch (38.10 mm) minimum, and
1.750 inches (44.45 mm) maximum.
FIGURE 1. Physical dimensions - Continued.
4
MIL-PRF-19500/394G
NOTES:
1. Chip size:
120 x 120 mils ± 2 mils.
2. Chip thickness:
3. Top metal:
4. Back metal:
10 ±1.5mils nominal.
Aluminum 30,000Å minimum, 33,000Å nominal.
A. Al/Ti/Ni/Ag12kÅ/3kÅ/7kÅ/7kÅmin.15kÅ/5kÅ/10kÅ/10kÅ nominal.
B. Gold 2,500Å minimum, 3,000Å nominal.
Collector.
5. Backside:
6. Bonding pad:
B = 52 x 12 mils, E = 84 x 12 mils.
FIGURE 2. JANHC and JANKC A-version die dimensions.
5
MIL-PRF-19500/394G
NOTES:
1. Die size:
.155 x .155 inch (3.937 x 3.937 mm).
2. Die thickness:
3. Base pad:
.008 ±.0016 inch (0.2032 ±0.04064 mm).
.012 x .090 inch (0.3048 x 2.286 mm).
.012 x .090 inch.
Gold, 2400 ±720 Ang.
Aluminum, 37500 ±7500 Ang.
Collector.
4. Emitter pad:
5. Back metal:
6. Top metal:
7. Back side:
8. Glassivation:
SiO2, 7500 ± 1500 Ang.
FIGURE 3. JANHC and JANKC B-version die dimensions.
6
MIL-PRF-19500/394G
3. REQUIREMENTS
3.1 General. The requirements for acquiring the product described herein shall consist of this document and
MIL-PRF-19500.
3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a
manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer's list (QML)
before contract award (see 4.2 and 6.3).
3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as
specified in MIL-PRF-19500.
3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified in
MIL-PRF-19500, on figure 1 (TO- 5) and on figures 2 and 3 (JANHC and JANKC) herein.
3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein.
Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2).
3.4.2 Construction. These devices shall be constructed in a manner and using materials which enable the
devices to meet the applicable requirements of MIL-PRF-19500 and this document.
3.5 Marking. Marking shall be in accordance with MIL-PRF-19500.
3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance
characteristics are as specified in 1.3, 1.4, and table I herein.
3.7 Electrical test requirements. The electrical test requirements shall be the subgroups specified in 4.4.2 and
4.4.3 herein.
3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and
shall be free from other defects that will affect life, serviceability, or appearance.
4. VERIFICATION
4.1 Classification of inspections. The inspection requirements specified herein are classified as follows:
a. Qualification inspection (see 4.2).
b. Screening (see 4.3).
c. Conformance inspection (see 4.4).
4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified
herein.
4.2.1 JANHC and JANKC qualification. JANHC and JANKC qualification inspection shall be in accordance with
MIL-PRF-19500.
* 4.2.2 Group E qualification. Group E qualification shall be performed herein for qualification or requalification
only. In case qualification was awarded to a prior revision of the associated specification that did not request the
performance of table II tests, the tests specified in table II herein shall be performed by the first inspection lot to this
revision to maintain qualification.
7
MIL-PRF-19500/394G
* 4.3 Screening (JANS, JANTXV, and JANTX levels only). Screening shall be in accordance with table IV of
MIL-PRF-19500 and as specified herein. The following measurements shall be made in accordance with table I
herein. Devices that exceed the limits of table I herein shall not be acceptable.
Screen (see table IV
of MIL-PRF-19500)
Measurement
JANS level
JANTX and JANTXV levels
3c
Thermal impedance, method 3131 of
MIL-STD-750, (see 4.3.3).
Thermal impedance, method 3131 of MIL-
STD-750, (see 4.3.3).
7
9
Hermetic seal (optional) (1)
Hermetic seal (optional) (1)
Not applicable
I
and h
FE1
CBO2
10
11
48 hours minimum
48 hours minimum
I
and h
FE1
I
; h ; DI
CBO2 FE1 CB02 = 100
CBO2
percent of initial value or 50 nA dc,
whichever is greater;
Dh
= ± 15 percent of initial value.
FE1
12
13
See 4.3.2
240 hours minimum
See 4.3.2
80 hours minimum
Subgroups 2 and 3 of table I herein;
Subgroup 2 of table I herein;
DI
= 100 percent of initial value
DI
= 100 percent of initial value
CB02
or 50 nA dc, whichever is greater;
Dh = ± 15 percent of initial value.
CB02
or 50 nA dc, whichever is greater;
Dh = ± 15 percent of initial value.
FE1
FE1
(1) Hermetic seal test shall be performed in either screen 7 or screen 14.
4.3.1 Screening (JANHC and JANKC). Screening of JANHC and JANKC die shall be in accordance with
MIL-PRF-19500, “Discrete Semiconductor Die/Chip Lot Acceptance”. Burn-in duration for the JANKC level follows
JANS requirements; the JANHC follows JANTX requirements.
4.3.2 Power burn-in conditions. Power burn-in conditions are as follows: VCB = 10 Vdc. Power shall be applied
to achieve TJ =135°C minimum using a minimum PD = 75 percent of PT maximum rated as defined in 1.3.
8
MIL-PRF-19500/394G
4.3.3 Thermal impedance (ZqJX measurements). The ZqJX measurements shall be performed in accordance with
method 3131 of MIL-STD-750.
a. IM measurement current...................... 10 mA.
b. IH forward heating current.................... 1 A.
c. tH heating time..................................... 10 - 30 ms.
d. tmd measurement delay time............... 30 - 60 ms.
e. VCE collector-emitter voltage .............. 16 V dc minimum.
The maximum limit for Z
qJX under these test conditions are ZqJX (max) = 12°C/W.
4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as
specified herein. If alternate screening is being performed in accordance with MIL-PRF-19500, a sample of
screened devices shall be submitted to and pass the requirements of group A1 and A2 inspection only (table VIb,
group B, subgroup 1 is not required to be performed again if group B has already been satisfied in accordance with
4.4.2).
4.4.1 Group A inspection. Group A inspection shall be conducted with MIL-PRF-19500, and table I herein.
4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the tests and conditions
specified for subgroup testing in table VIa (JANS) of MIL-PRF-19500 and 4.4.2.1 herein. Electrical measurements
(end-points) and delta requirements shall be in accordance with table I, group A, subgroup 2 and 4.5.3 herein: delta
requirements only apply to subgroups, B4, and B5. See 4.4.2.2 herein for JAN, JANTX, and JANTXV group B
testing. Electrical measurements (end-points) and delta requirements for JAN, JANTX, and JANTXV shall be after
each step in 4.4.2.2 and shall be in accordance with table I, group A, subgroup 2 and 4.5.3 herein.
* 4.4.2.1 Group B inspection, table VIa (JANS) of MIL-PRF-19500.
Subgroup
Method
Condition
B4
B5
1037
1027
VCB = 10 V dc.
(Note: If a failure occurs, resubmission shall be at the test conditions of the
original sample). VCB = 10 V dc; PD ³ 100 percent of maximum rated PT (see
1.3).
Option 1: 96 hours minimum, sample size in accordance with table VIa of
MIL-PRF-19500, adjust TA or PD to achieve TJ = +275°C minimum.
Option 2: 216 hours., sample size = 45, c = 0; adjust TA or PD to achieve TJ =
+225°C minimum.
9
MIL-PRF-19500/394G
4.4.2.2 Group B inspection, (JAN, JANTX, and JANTXV). Separate samples may be used for each step. In the
event of a group B failure, the manufacturer may pull a new sample at double size from either the failed assembly lot
or from another assembly lot from the same wafer lot. If the new “assembly lot” option is exercised, the failed
assembly lot shall be scrapped.
Subgroup
1
Method
1039
Condition
Steady-state life: Test condition B, 340 hours min., VCB = 10 - 30 V dc, power
shall be applied to achieve TJ = +150°C minimum using a minimum of PD = 75
percent of maximum rated PT as defined in 1.3. n = 45 devices, c = 0.
2
3
1039
1032
The steady-state life test of step 1 shall be extended to 1,000 hrs for each die
design. Samples shall be selected from a wafer lot every twelve months of wafer
production. Group B step 2 shall not be required more than once for any single
wafer lot. n = 45, c = 0.
High-temperature life (non-operating), t = 340 hours, TA = +200°C. n = 22, c = 0.
4.4.2.3 Group B sample selection. Samples selected from group B inspection shall meet all of the following
requirements:
a. For JAN, JANTX, and JANTXV samples shall be selected randomly from a minimum of three wafers (or
from each wafer in the lot) from each wafer lot. For JANS, samples shall be selected from each inspection
lot. See MIL-PRF-19500.
b. Must be chosen from an inspection lot that has been submitted to and passed group A, subgroup 2,
conformance inspection. When the final lead finish is solder or any plating prone to oxidation at high
temperature, the samples for life test (subgroups B4 and B5 for JANS, and group B for JAN, JANTX, and
JANTXV) may be pulled prior to the application of final lead finish.
4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the tests and conditions
specified for subgroup testing in table VII of MIL-PRF-19500, and in 4.4.3.1 (JANS).and 4.4.3.2 (JAN, JANTX, and
JANTXV) herein for group C testing. Electrical measurements (end-points) and delta requirements shall be in
accordance with table I, group A, subgroup 2 and 4.5.3 herein, delta measurements apply to subgroup C6.
4.4.3.1 Group C inspection, table VII (JANS) of MIL-PRF-19500.
Subgroup
C2
Method
2036
Condition
Test condition E.
C6
1026
1,000 hours at VCB = 10 V dc; power shall be applied to achieve TJ = +150°C
minimum and a minimum of PD = 75 percent of maximum rated PT as defined in
1.3.
4.4.3.2 Group C inspection, table VII (JAN, JANTX, and JANTXV) of MIL-PRF-19500.
Subgroup
C2
Method
2036
Condition
Test condition E.
*
C5
C6
3131
See 4.5.2, R
.
qJC
Not applicable.
10
MIL-PRF-19500/394G
4.4.3.3 Group C sample selection. Samples for subgroups in group C shall be chosen at random from any
inspection lot containing the intended package type and lead finish procured to the same specification which is
submitted to and passes group A tests for conformance inspection. When the final lead finish is solder or any
plating prone to oxidation at high temperature, the samples for C6 life test may be pulled prior to the application of
final lead finish. Testing of a subgroup using a single device type enclosed in the intended package type shall be
considered as complying with the requirements for that subgroup.
* 4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for
subgroup testing in appendix E, table IX of MIL-PRF-19500 and as specified herein. Electrical measurements (end-
points) shall be in accordance with table I, group A, subgroup 2 herein.
4.5 Method of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.
4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750.
4.5.2 Thermal resistance. Thermal resistance measurements shall be conducted in accordance with method
3131 of MIL-STD-750. The following conditions shall apply:
a. IM: Collector current ............................................................... 10 mA.
b. VCE: Measurement current (same as VH).................................. 10 V dc.
c. IH: Collector heating current................................................... 0.375 A.
d. VH: Collector-emitter heating voltage...................................... 10 V dc.
e. tH: Heating time...................................................................... 1.0 s.
f. tMD: Measurement delay time................................................... 30 to 60 ms.
g. tSW: Sampling window time....................................................... 10 ms maximum.
4.5.3 Delta requirements. Delta requirements shall be as specified below:
Step
Inspection
MIL-STD-750
Conditions
Symbol
Limit
Unit
Method
3036
1
2
Collector-base cutoff
current
Bias condition D,
VCB = 80 V dc
100 percent of initial
value or 50 nA dc,
whichever is greater.
DICB02 (1)
DhFE2 (1)
Forward current transfer
ratio
3076
± 20 percent change
from initial reading.
VCE = 5 V dc; IC = 5 A
dc; pulsed see 4.5.1
(see figure 4).
(1) Devices which exceed the group A limits for this test shall not be accepted.
11
MIL-PRF-19500/394G
TABLE I. Group A inspection.
Inspection 1/
MIL-STD-750
Conditions
Symbol
Limit
Unit
Method
2071
Min
Max
Subgroup 1 2/
Visual and mechanical
examination 3/
n = 45 devices, c = 0
Solderability 3/ 4/
2026
1022
n = 15 leads, c = 0
Resistance to solvent
3/ 4/ 5/
n = 15 devices, c = 0
Temperature cycling
3/ 4/
1051
1071
Test condition C, 25 cycles.
n = 22 devices, c = 0
Hermetic seal 4/
n = 22 devices, c = 0
Fine leak
Gross leak
Electrical
Group A, subgroup 2
measurements 4/
Bond strength 3/ 4/
2037
2075
Precondition TA = +250°C at
t = 24 hrs or TA = +300°C at
t = 2 hrs, n = 11 wires, c = 0
* Decap internal 4/
visual (design
verification)
n = 4 device, c = 0
Subgroup 2
Collector to base
cutoff current
3036
3011
I
10
mA dc
CBO1
2N4150, 2N4150S
2N5237, 2N5237S
2N5238, 2N5238S
VCB = 100 V dc
VCB = 150 V dc
VCB = 200 V dc
Breakdown voltage,
collector to emitter
V dc
Bias condition D, IC = 0.1 A dc,
pulsed (see 4.5.1)
V(BR)CEO
2N4150, 2N4150S
2N5237, 2N5237S
2N5238, 2N5238S
70
120
170
See footnotes at end of table.
12
MIL-PRF-19500/394G
TABLE I. Group A inspection - Continued.
Inspection 1/
MIL-STD-750
Conditions
Symbol
Limit
Unit
Method
Min
Max
Subgroup 2 - Continued
Emitter to base cutoff
current
3061
3041
10
10
mA dc
mA dc
VBE = 7 V dc
IEBO1
Collector to emitter
cutoff current
Bias condition D
ICEO1
VCE = 60 V dc
VCE = 110 V dc
VCE = 160 V dc
2N4150, 2N4150S
2N5237, 2N5237S
2N5238, 2N5238S
Collector to emitter
cutoff current
3041
Bias condition A
VBE = 0.5 V dc
10
mA dc
ICEX
2N4150, 2N4150S
2N5237, 2N5237S
2N5238, 2N5238S
VCE = 60 V dc
VCE = 110 V dc
VCE = 160 V dc
Emitter to base cutoff
current
3061
3036
3076
0.1
0.1
mA dc
mA dc
Bias condition D, VBE = 5 V dc
Bias condition D, VCB = 80 V dc
IEBO2
ICBO
hFE1
Collector to base cutoff
current
Forward-current
transfer ratio
VCE = 5 V dc, IC = 1 A dc, pulsed
(see 4.5.1)
50
50
50
200
225
225
2N4150, 2N4150S
2N5237, 2N5237S
2N5238, 2N5238S
Forward-current
transfer ratio
3076
3071
3071
40
120
0.6
2.5
VCE = 5 V dc, IC = 5 A dc, pulsed
(see 4.5.1)
hFE2
Collector to emitter
voltage (saturated)
V dc
V dc
IC = 5 A dc, IB = 0.5 A dc, pulsed
(see 4.5.1)
VCE(sat)1
Collector to emitter
voltage (saturated)
IC = 10 A dc, IB = 1 A dc, pulsed
(see 4.5.1)
VCE(sat)2
See footnotes at end of table.
13
MIL-PRF-19500/394G
TABLE I. Group A inspection - Continued.
Inspection 1/
MIL-STD-750
Conditions
Symbol
Limit
Unit
Method
Min
Max
Subgroup 2 - Continued
Base emitter voltage
saturation
3066
3066
3076
1.5
2.5
V dc
V dc
Test condition A, IC = 5 A dc, IB =
0.5 A dc, pulsed (see 4.5.1)
VBE(sat)1
VBE(sat)2
hFE3
Base emitter voltage
saturation
Test condition A, IC = 10 A dc, IB =
1 A dc, pulsed (see 4.5.1)
Forward-current
transfer ratio
10
VCE = 5 V dc, IC = 10 A dc, pulsed
(see 4.5.1)
Subgroup 3
High temperature
operation:
TA = +150°C
Collector to emitter
cutoff current
3041
100
mA dc
Bias condition A, VBE = -0.5 V dc
ICEX2
VCE = 60 V dc
VCE = 110 V dc
VCE = 160 V dc
2N4150, 2N4150S
2N5237, 2N5237S
2N5238, 2N5238S
Low temperature
operation:
TA = -55°C
Forward-current
transfer ratio
3076
3306
3206
20
VCE = 5 V dc, IC = 5 A dc,
pulsed (see 4.5.1)
hFE4
|hfe|
hfe
Subgroup 4
Magnitude of common-
emitter small-signal
short-circuit forward-
current transfer ratio
1.5
7.5
VCE = 10 V dc, IC = 0.2 A dc, f = 10
MHz
Small-signal short-
circuit forward-current
transfer ratio
VCE = 5 V dc, IC = 50 mA dc, f = 1
kHz
40
40
40
160
160
250
2N4150, 2N4150S
2N5237, 2N5237S
2N5238, 2N5238S
See footnotes at end of table.
14
MIL-PRF-19500/394G
TABLE I. Group A inspection - Continued.
Inspection 1/
MIL-STD-750
Conditions
Symbol
Limit
Unit
pF
Method
Min
Max
350
Subgroup 4 - Continued
Open circuit output
capacitance
3236
3251
VCB = 10 V dc, IE = 0, 100 kHz £ f £
1 MHz
Cobo
Pulse response
Delay time
Rise time
Test condition A
See figure 5
See figure 5
See figure 5
See figure 5
50
ns
ns
td
tr
500
1.5
500
Storage time
Fall time
ms
ts
tf
ns
Subgroup 5
Safe operating area
(continuous dc)
3051
TC = +25°C, t = 1.0 s,
Test 1
Test 2
VCE = 40 V dc, IC = 0.22 A dc
VCE = 70 V dc, IC = 90 mA dc
Test 3
2N5237, 2N5237S only
2N5238, 2N5238S only
VCE = 120 V dc, IC = 15 mA dc
VCE = 170 V dc, IC = 3.5 mA dc
Clamped inductive
sweep
3053
TC = +100°C minimum, IB = 0.5 A
dc, IC = 5 A dc, (see figure 6)
Electrical
See 4.5.3 herein.
Measurements
1/ For sampling plan, see MIL-PRF-19500.
2/ For resubmission of failed subgroup A1, double the sample size of the failed test or sequence of tests.
3/ Separate samples may be used.
4/ Not required for JANS.
5/ Not required for laser marked devices.
15
MIL-PRF-19500/394G
TABLE II. Group E inspection (all quality levels) – for qualification only.
MIL-STD-750
*
Inspection
Qualification
Method
1051
Conditions
Subgroup 1
45 devices
c = 0
Temperature cycling
(air to air)
Test condition C, 500 cycles
Hermetic seal
Fine leak
Gross leak
1071
1037
Electrical measurements
Subgroup 2
See group A, subgroup 2 herein.
45 devices
c = 0
Intermittent life
VCB = 10 V dc, 6,000 cycles.
Electrical measurements
See table I, group A, subgroup 2 herein.
Subgroups 3, 4, 5, 6,
and 7
Not applicable
Subgroup 8
45 devices
c = 0
Reverse stability
1033
Condition A for devices ³ 400 V
Condition B for devices < 400 V
16
MIL-PRF-19500/394G
FIGURE 4. Maximum operating conditions - dc forward biased mode.
17
MIL-PRF-19500/394G
FIGURE 5. Speed of response test circuit.
NOTES:
1. An appropriate pulse generator may be substituted.
2. RS £ 1.0 W noninductive.
3. Clamp voltage: 2N4150: 70 V dc +0 V dc, -5 V dc; 2N5237: 120 V dc +0 V dc, -5 V dc;
2N5238: 170 V dc +0 V dc, -5 V dc
4. STANCOR C-2691 or equivalent; 2 in series.
FIGURE 6. Clamped inductive sweep test circuit.
18
MIL-PRF-19500/394G
5. PACKAGING
5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or
order (see 6.2). When actual packaging of materiel is to be performed by DoD personnel, these personnel need to
contact the responsible packaging activity to ascertain requisite packaging requirements. Packaging requirements
are maintained by the Inventory Control Point's packaging activity within the Military Department or Defense Agency,
or within the Military Department's System Command. Packaging data retrieval is available from the managing
Military Department's or Defense Agency's automated packaging files, CD-ROM products, or by contacting the
responsible packaging activity.
6. NOTES
(This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.)
6.1 Intended use. The notes specified in MIL-PRF-19500 are applicable to this specification.
6.2 Acquisition requirements. Acquisition documents should specify the following:
a. Title, number, and date of this specification.
b. Issue of DoDISS to be cited in the solicitation and, if required, the specified issue of individual documents
referenced (see 2.2.1).
c. Lead finish (see 3.4.1).
d. Type designation and quality assurance level.
e. Packaging requirements (see 5.1).
6.3 Qualification. With respect to products requiring qualification, awards will be made only for products which
are, at the time of award of contract, qualified for inclusion in Qualified Manufacturer's List (QML) whether or not
such products have actually been so listed by that date. The attention of the contractors is called to these
requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the Federal
Government tested for qualification in order that they may be eligible to be awarded contracts or orders for the
products covered by this specification. Information pertaining to qualification of products may be obtained from
Defense Supply Center, Columbus, ATTN: DSCC-VQE, P.O. Box 3990, Columbus, OH 43216-5000.
19
MIL-PRF-19500/394G
6.4 Suppliers of JANHC and JANKC die. The qualified die suppliers with the applicable letter version (example,
JANHCA2N4150) will be identified on the QML.
JANC ordering information
PIN
Manufacturers
43611
34156
2N4150
JANHCA2N4150
JANKCA2N4150
JANHCB2N4150
JANKCB2N4150
6.5 Changes from previous issue. The margins of this revision are marked with an asterisk to indicate where
changes from the previous issue were made. This was done as a convenience only and the Government assumes
no liability whatsoever for any inaccuracies in these notations. Bidders and contractors are cautioned to evaluate the
requirements of this document based on the entire content irrespective of the marginal notations and relationship to
the last previous issue.
Custodians:
Army - CR
Navy - EC
Preparing activity:
DLA - CC
Air Force - 11
DLA – CC
(Project 5961 - 2559)
Review activities:
Army - MI, SM
Air Force - 19, 71, 99
20
STANDARDIZATION DOCUMENT IMPROVEMENT PROPOSAL
INSTRUCTIONS
1. The preparing activity must complete blocks 1, 2, 3, and 8. In block 1, both the document number and revision
letter should be given.
2. The submitter of this form must complete blocks 4, 5, 6, and 7.
3. The preparing activity must provide a reply within 30 days from receipt of the form.
NOTE: This form may not be used to request copies of documents, nor to request waivers, or clarification of requirements on
current contracts. Comments submitted on this form do not constitute or imply authorization to waive any portion of the referenced
document(s) or to amend contractual requirements.
1. DOCUMENT NUMBER
MIL-PRF-19500/394G
2. DOCUMENT DATE
5 July 2002
I RECOMMEND A CHANGE:
3. DOCUMENT TITLE
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER SWITCHING TYPES: 2N4150, 2N5237, 2N5238,
2N4150S, 2N5237S, AND 2N5238S JAN, JANTX, JANTXV, JANS, JANHC AND JANKC
4. NATURE OF CHANGE (Identify paragraph number and include proposed rewrite, if possible. Attach extra sheets as needed.)
5. REASON FOR RECOMMENDATION
6. SUBMITTER
a. NAME (Last, First, Middle initial)
b. ORGANIZATION
c. ADDRESS (Include Zip Code)
d. TELEPHONE (Include Area Code)
7. DATE SUBMITTED
COMMERCIAL
DSN
FAX
EMAIL
8. PREPARING ACTIVITY
b. TELEPHONE
Commercial
614-692-0510
a. Point of Contact
Alan Barone
DSN
FAX
EMAIL
850-0510
614-692-6939
alan.barone@dscc.dla.mil
c. ADDRESS
Defense Supply Center Columbus
ATTN: DSCC-VAC
IF YOU DO NOT RECEIVE A REPLY WITHIN 45 DAYS, CONTACT:
Defense Standardization Program Office (DLSC-LM)
8725 John J. Kingman, Suite 2533
P.O. Box 3990
Fort Belvoir, VA 22060-6221
Columbus, OH 43216-5000
Telephone (703) 767-6888 DSN 427-6888
DD Form 1426, Feb 1999 (EG)
Previous editions are obsolete
WHS/DIOR, Feb 99
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JANTXV2N5339U3
Small Signal Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-276AA, SMD5, 3 PIN
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