OM6502ST [ETC]
TRANSISTOR | IGBT | N-CHAN | 500V V(BR)CES | 100A I(C) | TO-257AA ; 晶体管| IGBT | N -CHAN | 500V V( BR ) CES | 100A I(C ) | TO- 257AA\n型号: | OM6502ST |
厂家: | ETC |
描述: | TRANSISTOR | IGBT | N-CHAN | 500V V(BR)CES | 100A I(C) | TO-257AA
|
文件: | 总2页 (文件大小:22K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
OM6501ST
OM6502ST
INSULATED GATE BIPOLAR TRANSISTOR
(IGBT) IN A HERMETIC TO-257AA PACKAGE
500 Volt, 5 And 10 Amp, N-Channel IGBT
In A Hermetic Metal Package
FEATURES
• Isolated Hermetic Metal Package
• High Input Impedance
• Low On-Voltage
• High Current Capability
• Fast Turn-Off
• Low Conductive Losses
• Available Screened to MIL-S-19500, TX, TXV And S Levels
DESCRIPTION
The IGBT power transistor features a high impedance insulated gate and a low
on-resistance characteristic of bipolar transistors. These devices are ideally suited
for motor drives, UPS converters, power supplies and resonant power converters.
MAXIMUM RATINGS @ 25°C Unless Specified Otherwise
PART
IC (Cont.)
V(BR)CES
V
VCE (sat) (Typ.)
Tf (Typ.)
ns
qJC
°C/W
3.8
PD
W
TJ
NUMBER
OM6501ST
OM6502ST
@ 90°C, A
V
°C
5
500
500
2.8
2.8
400
35
42
150
150
10
400
3.0
3.1
SCHEMATIC MECHANICAL OUTLINE
PACKAGE OPTIONS
.200
.190
.420
.410
Collector
.045
.035
.665
.645
.150
.140
.537
.527
1
2
3
.430
.410
C
E
G
MOD PAK
Gate
.038 MAX.
.005
.750
.500
Emitter
.120 TYP.
.100 TYP.
.035
.025
Pin 1: Collector
Pin 2: Emitter
Pin 3: Gate
6 PIN SIP
Note: IGBTs are also available in Z-Tab, dual and quad pak styles - Please call the factory for more information.
4 11 R2
Supersedes 2 07 R1
3.1 - 139
PRELIMINARY DATA: OM6501ST
IGBT CHARACTERISTICS
PRELIMINARY DATA: OM6502ST
IGBT CHARACTERISTICS
Parameter - OFF
Min. Typ. Max. Units Test Conditions
Parameter - OFF
Min. Typ. Max. Units Test Conditions
V(BR)CES Collector Emitter
Breakdown Voltage
500
V
VCE = 0
V(BR)CES Collector Emitter
Breakdown Voltage
500
V
VCE = 0
025Craw
IC = 250 µA
IC = 250 µA
ICES
Zero Gate Voltage
Drain Current
0.25 mA VCE = Max. Rat., VGE = 0
1.0 mA CE = 0.8 Max. Rat., VGE = 0
TC = 125°C
±100 nA VGE = ±20 V
CE = 0 V
ICES
Zero Gate Voltage
Drain Current
0.25 mA VCE = Max. Rat., VGE = 0
1.0 mA CE = 0.8 Max. Rat., VGE = 0
TC = 125°C
±100 nA VGE = ±20 V
CE = 0 V
V
V
o
S
IGES
Gate Emitter Leakage
Current
IGES
Gate Emitter Leakage
Current
e
,
V
V
Parameter - ON
Parameter - ON
nitsr,eAM10
VGE(th) Gate Threshold Voltage
VCE(sat) Collector Emitter
Saturation Voltage
2.0
4.0
V
V
VCE = VGE, IC = 250 µA
VGE = 15 V, IC = 5 A
TC = 25°C
VGE(th) Gate Threshold Voltage
VCE(sat) Collector Emitter
Saturation Voltage
2.0
2.5
4.0
V
V
VCE = VGE, IC = 250 µA
VGE = 15 V, IC = 10 A
TC = 25°C
3.0
3.0
VCE(sat) Collector Emitter
Saturation Voltage
2.8 3.0
V
VGE = 15 V, IC = 5 A
TC = 100°C
VCE(sat) Collector Emitter
Saturation Voltage
2.8 3.0
V
VGE = 15 V, IC = 10 A
TC = 100°C
35USA(0
Dynamic
Dynamic
gfs
Forward Transductance
Input Capacitance
2.0
260
50
S
VCE = 20 V, IC = 5 A
gfs
Forward Transductance
Input Capacitance
S
VCE = 20 V, IC = 10 A
Cies
Coes
Cres
pF VGE = 0
Cies
Coes
Cres
950 pF VGE = 0
)8354
Output Capacitance
pF VCE = 25 V
pF f = 1 mHz
Output Capacitance
140 pF VCE = 25 V
5-7
Reverse Transfer Capacitance
20
Reverse Transfer Capacitance
80
pF f = 1 mHz
67FXA(5)0835-426
Switching-Resistive Load
Switching-Resistive Load
Td(on)
tr
Turn-On Time
Rise Time
37
nS VCC = 400 V, IC = 5 A
nS VGE = 15 V, Rg = 47
Td(on)
tr
Td(off)
tf
Turn-On Time
Rise Time
150 nS
150
1000 nS VCC = 400 V, IC = 10 A
700 nS VGE = 15 V, Rg = 100
1500 nS
Switching-Inductive Load
Turn-Off Delay Time
Fall Time
tr(Volt)
tf
Off Voltage Rise Time
Fall Time
.35
.81
1.2
.95
µS VCEclamp = 400 V, IC = 5 A
µS VGE = 15 V, Rg = 100
µS L = 0.1 mH, Tj = 100°C
mJ
Switching-Inductive Load
tcross
Eoff
Cross-Over Time
Turn-Off Losses
Td(off)
tf
Turn-Off Delay Time
Fall Time
1.2
1.5
2.0
4.0
µS VCEclamp = 350 V, IC = 10 A
µS VGE = 15 V, Rg = 100
µS L = 180 µH, Tj = 100°C
mJ
tcross
Eoff
Cross-Over Time
Turn-Off Losses
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