Q62702F1575 [ETC]
TRANSISTOR R.F SOT343 ; 晶体管R.F SOT343\n
| 型号： | Q62702F1575 |
| 厂家： | 
ETC |
| 描述： | TRANSISTOR R.F SOT343
|
| 文件： | 总7页 (文件大小：64K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BFP 136W
NPN Silicon RF Transistor
• For power amplifier in DECT and PCN systems
• f = 5.5GHz
T
• Gold metalization for high reliability
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking Ordering Code
Pin Configuration
Package
BFP 136W PAs
Q62702-F1575
1 = E 2 = C 3 = E 4 = B SOT-343
Maximum Ratings
Parameter
Symbol
Values
12
Unit
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
V
CEO
V
CES
V
CBO
V
EBO
V
20
20
2
I
I
150
20
mA
mW
°C
C
Base current
B
Total power dissipation
P
tot
≤
T
60 °C
1000
S
Junction temperature
Ambient temperature
Storage temperature
T
T
T
150
j
- 65 ... + 150
- 65 ... + 150
A
stg
Thermal Resistance
1)
≤
Junction - soldering point
R
thJS
90
K/W
1) T is measured on the collector lead at the soldering point to the pcb.
S
Semiconductor Group
1
Jan-20-1997
BFP 136W
Electrical Characteristics at T = 25°C, unless otherwise specified.
A
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Collector-emitter breakdown voltage
V
V
(BR)CEO
I = 1 mA, I = 0
12
-
-
C
B
Collector-emitter cutoff current
= 20 V, V = 0
I
I
I
µA
nA
µA
-
CES
V
CE
-
-
100
50
1
BE
Collector-base cutoff current
= 10 V, I = 0
CBO
V
CB
-
-
E
Emitter-base cutoff current
= 1 V, I = 0
EBO
V
EB
-
-
C
DC current gain
I = 80 mA, V = 5 V
h
FE
50
100
200
C
CE
Semiconductor Group
2
Jan-20-1997
BFP 136W
Electrical Characteristics at T = 25°C, unless otherwise specified.
A
Parameter
Symbol
Values
Unit
min.
typ.
max.
AC Characteristics
Transition frequency
f
GHz
pF
T
I = 80 mA, V = 5 V, f = 500 MHz
4
-
5.5
1.7
0.7
6.8
-
C
CE
Collector-base capacitance
= 10 V, f = 1 MHz
C
C
C
F
cb
ce
eb
V
CB
2.5
Collector-emitter capacitance
= 10 V, f = 1 MHz
V
CE
-
-
-
Emitter-base capacitance
= 0.5 V, f = 1 MHz
V
EB
-
Noise figure
dB
I = 30 mA, V = 5 V, Z = Z
C
CE
S
Sopt
Sopt
f = 900 MHz
-
-
2
-
-
f = 1.8 GHz
Power gain
3.3
2)
G
ma
I = 80 mA, V = 5 V, Z = Z
C
CE
S
Z = Z
L
Lopt
f = 900 MHz
f = 1.8 GHz
-
-
15.5
9.5
-
-
2
Transducer gain
|S |
21e
I = 80 mA, V = 5 V, Z =Z = 50 Ω
C
CE
S
L
f = 900 MHz
-
-
9
3
-
-
f = 1.8 GHz
Third order intersept point
I = 80 mA, V = 5 V, f = 1.8 MHz
IP
dBm
3
C
CE
Z = Z
S
Z = Z
Lopt
-
33
-
Sopt,
L
2
1/2
2) G = |S /S | (k-(k -1) )
ma
21 12
Semiconductor Group
3
Jan-20-1997
BFP 136W
SPICE Parameters (Gummel-Poon Model, Berkeley-SPICE 2G.6 Syntax) :
Transistor Chip Data
IS =
1.5813
12.331
1.4254
31.901
1.8821
1.0078
33.904
20.691
4.5579
1.1381
1.0033
0
fA
V
BF =
113.32
1.4907
86.717
-
NF =
1.0653
-
VAF =
NE =
IKF =
BR =
IKR =
RB =
A
-
ISE =
NR =
ISC =
IRB =
RC =
46.37
fA
-
-
1.8047
VAR =
NC =
RBM =
CJE =
TF =
V
0.033605 A
0.0080864 fA
Ω
Ω
V
-
-
0
0.83992
0.01636
0.36824
0.10174
2977.4
0.02899
0.75
mA
Ω
fF
ps
mA
V
Ω
-
RE =
0.22081
0.71518
0.31338
0
VJE =
XTF =
PTF =
MJC =
CJS =
XTB =
FC =
MJE =
VTF =
CJC =
XCJC =
VJS =
EG =
TNOM
V
fF
-
ITF =
VJC =
TR =
deg
-
0.31461
0
ns
-
fF
-
V
eV
K
MJS =
XTI =
0
1.11
3
-
0.99886
-
300
All parameters are ready to use, no scalling is necessary.
Extracted on behalf of SIEMENS Small Signal Semiconductors by:
Institut für Mobil-und Satellitenfunktechnik (IMST)
© 1996 SIEMENS AG
Package Equivalent Circuit:
LBI =
0.5
nH
nH
nH
nH
nH
nH
fF
LBO =
LEI =
0.51
0.18
0.14
0.05
0.35
78
LEO =
LCI =
LCO =
CBE =
CCB =
CCE =
48
fF
244
fF
Valid up to 6 GHz
For examples and ready to use parameters please contact your local Siemens distributor or sales office to
obtain a Siemens CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/35.htm
Semiconductor Group
4
Jan-20-1997
BFP 136W
Total power dissipation P = f (T *, T )
tot
A
S
* Package mounted on epoxy
1200
mW
1000
Ptot
900
TS
800
700
600
500
400
300
200
TA
100
0
0
20
40
60
80
100 120 °C 150
TA,TS
Permissible Pulse Load R
= f (t )
Permissible Pulse Load P
/P
= f (t )
thJS
p
totmax totDC
p
10 2
10 2
R
Ptotmax/PtotDC
-
thJS K/W
D = 0
0.005
0.01
0.02
0.05
0.1
10 1
10 1
0.2
0.5
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
10 0
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1s 10 0
tp
10 0
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1s 10 0
tp
Semiconductor Group
5
Jan-20-1997
BFP 136W
Collector-base capacitance C = f (V )
Transition frequency f = f (I )
T C
cb
CB
V
BE
= v = 0, f = 1MHz
be
V
= Parameter
CE
3.0
pF
7.0
GHz
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
8V
5V
3V
Ccb
fT
2V
2.0
1.5
1.0
1V
0.7V
0.5
0.0
0.5
0.0
0
2
4
6
8
V
VR
11
0
20 40 60 80 100 120 140 mA 170
IC
Power Gain G , G = f(I )
Power Gain G , G = f(I )
ma ms C
ma
ms
C
f = 0.9GHz
= Parameter
f = 1.8GHz
V = Parameter
CE
V
CE
12
dB
10
9
18
dB
14
12
10
8
10V
G
3V
G
10V
2V
3V
2V
8
1V
7
6
1V
0.7V
5
4
6
0.7V
3
4
2
2
0
1
0
0
20 40 60 80 100 120 140 mA 170
IC
0
20 40 60 80 100 120 140 mA 170
IC
Semiconductor Group
6
Jan-20-1997
BFP 136W
Power Gain G , G = f(V ):_____
Intermodulation Intercept Point IP =f(I )
3 C
ma
ms
CE
2
|S | = f(V ):---------
(3rd order, Output, Z =Z =50 )
Ω
S L
21
CE
f = Parameter
V
= Parameter, f = 900MHz
CE
40
18
8V
IC=80mA
dB
14
12
10
8
0.9GHz
dBm
30
5V
3V
2V
G
IP3
1.8GHz
0.9GHz
25
20
6
1V
4
15
10
2
0
0
2
4
6
8
V
12
0
20
40
60
80 100 120 mA 160
IC
VCE
2
Power Gain G , G = f(f)
Power Gain |S | = f(f)
21
ma
ms
V
= Parameter
V
= Parameter
CE
CE
30
34
IC=80mA
dB
IC=80mA
dB
24
20
16
12
8
28
24
20
16
12
8
G
G
4
0
10V
2V
1V
10V
1V
0.7V
4
0
-4
-8
0.7V
0.0
0.5
1.0
1.5
2.0
2.5
GHz 3.5
f
0.0
0.5
1.0
1.5
2.0
2.5
GHz 3.5
f
Semiconductor Group
7
Jan-20-1997
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