Q62703-N216-X6 [ETC]
EINFACHKOPPLER MIT TRANSISTORAUSGANG ; EINFACHKOPPLER MIT TRANSISTORAUSGANG\n
| 型号： | Q62703-N216-X6 |
| 厂家： | 
ETC |
| 描述： | EINFACHKOPPLER MIT TRANSISTORAUSGANG
|
| 文件： | 总3页 (文件大小：97K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SFH610A/611A/615A/617A
5.3 kV TRIOS OPTOCOUPLER
HIGH RELIABILITY
FEATURES
• High Current Transfer Ratios
at 10 mA: 40–320%
Package Dimensions in Inches (mm)
2
1
Pin One I.D.
SFH610A
at 1 mA: 60% typical (>13)
• Low CTR Degradation
Anode
1
2
4
3
Emitter
.268 (6.81)
.255 (6.48)
• Good CTR Linearity Depending on Forward Current
• Withstand Test Voltage, 5300 VACRMS
• High Collector-Emitter Voltage, VCEO=70 V
• Low Saturation Voltage
Cathode
Collector
3
4
.190 (4.83)
.179 (4.55)
• Fast Switching Times
• Field-Effect Stable by TRIOS
(TRansparent IOn Shield)
.305
(7.75)
.045 (1.14)
.030 (.76)
.150 (3.81)
.130 (3.30)
• Temperature Stable
.135 (3.43)
.115 (2.92)
• Low Coupling Capacitance
• End-Stackable, .100"(2.54 mm) Spacing
• High Common-Mode Interference Immunity (Uncon-
nected Base)
4°
10 °
.040 (1.02)
.030 (.76 )
Typ.
Typ.
3°–9°
.022 (.56)
.018 (.46)
.012 (.30)
.008 (.20)
1.00 (2.54)
Typ.
• Underwriters Lab File #52744
SFH611A
SFH615A/617A
•
VDE 0884 Available with Option 1
• SMD Option – See SFH6106/16/56 Data Sheet
4
3
Collector
Emitter
Cathode
Anode
1
2
Anode
1
2
4
3
Collector
Emitter
DESCRIPTION
Cathode
The SFH61XA features a high current transfer ratio, low
coupling capacitance and high isolation voltage. These
couplers have a GaAs infrared emitting diode emitter,
which is optically coupled to a silicon planar phototransis-
tor detector, and is incorporated in a plastic DIP-4
package.
Maximum Ratings
Emitter
Reverse Voltage ............................................................................6 V
DC Forward Current ................................................................ 60 mA
Surge Forward Current (tP≤10 µs) ............................................ 2.5 A
Total Power Dissipation .........................................................100 mW
Detector
Collector-Emitter Voltage .............................................................70 V
Emitter-Collector Voltage ...............................................................7 V
Collector Current......................................................................50 mA
Collector Current (tP≤1 ms)....................................................100 mA
Total Power Dissipation .........................................................150 mW
Package
The coupling devices are designed for signal transmission
between two electrically separated circuits.
The couplers are end-stackable with 2.54 mm spacing.
Creepage and clearance distances of >8 mm are
achieved with option 6. This version complies with IEC 950
(DIN VDE 0805) for reinforced insulation up to an operation
voltage of 400 V
or DC.
RMS
Specifications subject to change.
Isolation Test Voltage between Emitter and
Detector, refer to Climate DIN 40046,
part 2, Nov. 74 ......................................................... 5300 VAC
RMS
Creepage ................................................................................≥7 mm
Clearance ................................................................................≥7 mm
Insulation Thickness between Emitter and Detector............≥0.4 mm
Comparative Tracking Index
per DIN IEC 112/VDE0 303, part 1 .........................................≥175
Isolation Resistance
12
V =500 V, T =25°C ..........................................................≥10
Ω
Ω
IO
A
11
V =500 V, T =100°C ........................................................≥10
IO
A
Storage Temperature Range .......................................–55 to +150°C
Ambient Temperature Range ......................................–55 to +100°C
Junction Temperature...............................................................100°C
Soldering Temperature (max. 10 s. Dip Soldering
Distance to Seating Plane ≥1.5 mm) ....................................260°C
5–1
Characteristics (T =25°C)
A
Description
Symbol
Unit
Condition
Emitter (IR GaAs)
Forward Voltage
V
1.25 (≤1.65)
0.01 (≤10)
13
V
I =60 mA
F
F
Reverse Current
I
µA
pF
K/W
V =6 V
R
R
Capacitance
C
R
V =0 V, f=1 MHz
R
0
Thermal Resistance
Detector (Si Phototransistor)
Capacitance
750
thJA
C
R
5.2
pF
V
=5 V, f=1 MHz
CE
CE
Thermal Resistance
Package
500
K/W
thJA
Collector-Emitter Saturation Voltage
Coupling Capacitance
V
0.25 (≤0.4)
V
I =10 mA, I =2.5 mA
F C
CESAT
C
0.4
pF
C
Current Transfer Ratio (I /I at V =5 V) and Collector-Emitter Leakage Current by Dash Number
C F
CE
Description
I / I (I =10 mA)
-1
-2
-3
-4
40–80
30 (>13)
2 (≤50)
63–125
45 (>22)
2 (≤50)
100–200
70 (>34)
5 (≤100)
160–320
90 (>56)
5 (≤100)
%
C
F
F
I / I (I =1 mA)
%
C
F
F
Collector-Emitter Leakage Current, I
nA
CEO
V
=10 V
CE
Switching Times (Typical)
Linear Operation (without saturation)
I =10 mA, V =5 V,T =25°C
F
CC
A
Load Resistance
Turn-on Time
Rise Time
R
75
Ω
L
IF
RL=75 Ω
t
3.0
2.0
2.3
2.0
250
µs
µs
µs
µs
kHz
ON
VCC=5 V
IC
t
R
Turn-off Time
Fall Time
t
OFF
47 Ω
t
F
Cut-off Frequency
F
CO
Switching Operation (with saturation)
IF
-1
-2 and -3 -4
1 KΩ
I =20
I =10 mA I =5 mA
VCC=5 V
F
F
F
mA
3.0
2.0
18
Turn-on Time
Rise Time
t
4.2
3.0
23
6.0
4.6
25
µs
µs
µs
µs
ON
47 Ω
t
R
Turn-off Time
Fall Time
t
OFF
t
11
14
15
F
SFH610/11/15/17A
5–2
Figure 7. Permissable diode for-
ward current vs. ambient temp.
Figure 1. Current transfer ratio (typ.)
vs. temperature I =10 mA, V =0.5 V
Figure 4.Transistor capacitance (typ.) vs.
collector-emitter voltage T =25°C, f=1 MHz
F
CE
A
20
pF
15
C
10
5
CCE
0
10-1
10-0
101
102
10-2
V
V
e
Figure 5. Permissible pulse handling
capability. Forward current vs. pulse
Figure 2. Output characteristics (typ.)
Collector current vs. collector-emitter
width Pulse cycle D=parameter, T =25°C
A
voltage T =25°C
A
Figure 3. Diode forward voltage
(typ.) vs. forward current
Figure 6. Permissible power
dissipation vs. ambient temperature
SFH610/11/15/17A
5–3
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