关闭背景特效

SSW3N80A [ETC]

TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 3A I(D) | TO-263AB ; 晶体管| MOSFET | N沟道| 800V V（ BR ） DSS | 3A I（ D） | TO- 263AB\n

SSW3N80A


元器件型号：	SSW3N80A
生产厂家：	ETC
描述和应用：	TRANSISTOR \| MOSFET \| N-CHANNEL \| 800V V(BR)DSS \| 3A I(D) \| TO-263AB 晶体管\| MOSFET \| N沟道\| 800V V（ BR ） DSS \| 3A I（ D） \| TO- 263AB\n 晶体晶体管开关脉冲
PDF文件：	总7页 (文件大小：376K)
下载文档：	下载PDF数据表文档文件
型号参数：SSW3N80A参数

SSW3N80ATM

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

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0 FAIRCHILD

SSW3N90A

TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 3A I(D) | TO-263AB

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18 ETC

SSW3N90ATM

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

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0 FAIRCHILD

SSW-407

SPDT RF Absorptive Switch

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8 ETC

SSW408

DC-4 GHz High Power GaAs MMIC SPDT Switch

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25 STANFORD

SSW408

DC-4 GHz High Power GaAs MMIC SPDT Switch

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28 STANFORD

SSW-408

DC-4 GHz High Power GaAs MMIC SPDT Switch

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8 STANFORD

SSW-408

DC-4 GHz High Power GaAs MMIC SPDT Switch

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21 STANFORD

SSW-424

SPDT RF Absorptive Switch

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24 ETC

SSW4N60A

TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 4A I(D) | TO-263AB

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106 ETC

SSW4N60A

Power Field-Effect Transistor, 4A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3

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0 SAMSUNG

SSW4N60B

600V N-Channel MOSFET

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69 FAIRCHILD

SSW4N60BTM

暂无描述

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0 FAIRCHILD

SSW4N80A

TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 4A I(D) | TO-263AB

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47 ETC

SSW4N80AS

TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 4.5A I(D) | TO-263AB

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24 ETC

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