STD2NC60-1 [ETC]
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 2A I(D) | TO-251AA ; 晶体管| MOSFET | N沟道| 600V V（ BR ） DSS | 2A I（ D） | TO- 251AA\n
| 型号： | STD2NC60-1 |
| 厂家： | 
ETC |
| 描述： | TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 2A I(D) | TO-251AA
|
| 文件： | 总9页 (文件大小：97K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STD2NC60
- 2A DPAK / IPAK
N-CHANNEL 600V - 3.3
Ω
PowerMesh II MOSFET
TYPE
V
R
DS(on)
I
D
DSS
STD2NC60
600V
< 3.6Ω
2A
■
■
■
■
■
TYPICAL R (on) = 3.3Ω
DS
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
NEW HIGH VOLTAGE BENCHMARK
GATE CHARGE MINIMIZED
3
3
2
1
1
DPAK
IPAK
DESCRIPTION
The PowerMESH II is the evolution of the first
generation of MESH OVERLAY . The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■
■
■
HIGH CURRENT, HIGH SPEED SWITCHING
SWITH MODE POWER SUPPLIES (SMPS)
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVERS
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Drain-source Voltage (V = 0)
Value
Unit
V
V
600
DS
GS
V
Drain-gate Voltage (R = 20 kΩ)
600
V
DGR
GS
V
Gate- source Voltage
±30
V
GS
I
Drain Current (continuos) at T = 25°C
2
A
D
D
C
I
Drain Current (continuos) at T = 100°C
1.3
A
C
I
( )
●
Drain Current (pulsed)
8
60
A
DM
P
Total Dissipation at T = 25°C
W
TOT
C
Derating Factor
0.48
4
W/°C
V/ns
°C
°C
dv/dt(1)
Peak Diode Recovery voltage slope
Storage Temperature
T
stg
–65 to 150
150
T
Max. Operating Junction Temperature
j
(•)Pulse width limited by safe operating area
(1)I ≤2A, di/dt ≤100A/µs, V ≤ V
, T ≤ T
(BR)DSS j JMAX.
SD
DD
January 2001
1/9
STD2NC60
THERMAL DATA
Rthj-case
Rthj-amb
Thermal Resistance Junction-case Max
2
°C/W
°C/W
°C
Thermal Resistance Junction-ambient Max
100
275
T
l
Maximum Lead Temperature For Soldering Purpose
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
I
Avalanche Current, Repetitive or Not-Repetitive
2
A
AR
(pulse width limited by T max)
j
E
Single Pulse Avalanche Energy
80
mJ
AS
(starting T = 25 °C, I = I , V = 50 V)
j
D
AR DD
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Drain-source
Test Conditions
Min.
Typ.
Max.
Unit
V
I
= 250 µA, V = 0
600
V
(BR)DSS
D
GS
Breakdown Voltage
I
Zero Gate Voltage
V
V
V
= Max Rating
DS
1
µA
µA
nA
DSS
Drain Current (V = 0)
GS
= Max Rating, T = 125 °C
50
DS
GS
C
I
Gate-body Leakage
= ±30V
±100
GSS
Current (V = 0)
DS
ON (1)
Symbol
Parameter
Test Conditions
Min.
Typ.
3
Max.
4
Unit
V
V
GS(th)
DS(on)
V
V
= V , I = 250µA
Gate Threshold Voltage
2
DS
GS
GS
D
R
Static Drain-source On
Resistance
= 10V, I = 1.5 A
D
3.3
3.6
Ω
I
On State Drain Current
V
V
> I
= 10V
x R
DS(on)max,
2
A
D(on)
DS
GS
D(on)
DYNAMIC
Symbol
Parameter
Test Conditions
x R
DS(on)max,
Min.
Typ.
Max.
Unit
g
fs
(1)
Forward Transconductance
V
> I
1.2
2
S
DS
D(on)
I
= 1.5A
D
C
Input Capacitance
Output Capacitance
V
= 25V, f = 1 MHz, V = 0
400
57
pF
pF
iss
DS
GS
C
oss
Reverse Transfer
Capacitance
C
rss
7
pF
2/9
STD2NC60
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
V
R
= 300V, I = 1.5A
Turn-on Delay Time
13
ns
d(on)
DD
D
= 4.7Ω V = 10V
G
GS
t
Rise Time
9
ns
r
(see test circuit, Figure 3)
Q
V
V
= 480V, I = 3A,
= 10V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
15
22
nC
nC
nC
g
DD
GS
D
Q
6.2
5.6
gs
Q
gd
SWITCHING OFF
Symbol
Parameter
Off-voltage Rise Time
Fall Time
Test Conditions
Min.
Typ.
11
Max.
Unit
ns
t
V
R
= 480V, I = 3A,
r(Voff)
DD
D
= 4.7Ω, V = 10V
G
GS
t
f
13
ns
(see test circuit, Figure 5)
t
Cross-over Time
18
ns
c
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
2
Unit
A
I
Source-drain Current
SD
I
(2)
(1)
Source-drain Current (pulsed)
Forward On Voltage
8
A
SDM
V
I
I
= 3A, V = 0
1.6
V
SD
SD
SD
GS
t
= 3A, di/dt = 100A/µs,
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
500
2.1
8.5
ns
µC
A
rr
V
= 100V, T = 150°C
j
DD
Q
rr
(see test circuit, Figure 5)
I
RRM
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Safe Operating Area
Thermal Impedance
3/9
STD2NC60
Output Characteristics
Tranfer Characteristics
Tranconductance
Static Drain-Source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
4/9
STD2NC60
Normalized Gate Thereshold Voltage vs Temp.
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/9
STD2NC60
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For
Fig. 4: Gate Charge test Circuit
Resistive Load
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/9
STD2NC60
TO-251 (IPAK) MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
2.2
TYP.
MAX.
2.4
MIN.
0.086
0.035
0.027
0.025
0.204
MAX.
0.094
0.043
0.051
0.031
0.212
0.033
A
A1
A3
B
0.9
1.1
0.7
1.3
0.64
5.2
0.9
B2
B3
B5
B6
C
5.4
0.85
0.3
0.012
0.95
0.6
0.6
6.2
6.6
4.6
16.3
9.4
1.2
1
0.037
0.023
0.023
0.244
0.260
0.181
0.641
0.370
0.047
0.039
0.45
0.48
6
0.017
0.019
0.236
0.252
0.173
0.626
0.354
0.031
C2
D
E
6.4
4.4
15.9
9
G
H
L
L1
L2
0.8
0.8
0.031
H
L
D
L2
L1
0068771-E
7/9
STD2NC60
TO-252 (DPAK) MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
2.20
0.90
0.03
0.64
5.20
0.45
0.48
6.00
6.40
4.40
9.35
TYP.
MAX.
2.40
1.10
0.23
0.90
5.40
0.60
0.60
6.20
6.60
4.60
10.10
MIN.
0.087
0.035
0.001
0.025
0.204
0.018
0.019
0.236
0.252
0.173
0.368
MAX.
0.094
0.043
0.009
0.035
0.213
0.024
0.024
0.244
0.260
0.181
0.398
A
A1
A2
B
B2
C
C2
D
E
G
H
L2
L4
V2
0.8
0.031
0.60
0o
1.00
8o
0.024
0o
0.039
0o
P032P_B
8/9
STD2NC60
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9/9
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