STGD7NB60MT4 [ETC]
N-CHANNEL 7A - 600V TO-220/DPAK POWERMESH IGBT ; N沟道7A - 600V TO- 220 / DPAK IGBT的PowerMESH
| 型号： | STGD7NB60MT4 |
| 厂家： | 
ETC |
| 描述： | N-CHANNEL 7A - 600V TO-220/DPAK POWERMESH IGBT
|
| 文件： | 总11页 (文件大小：526K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STGP7NB60M - STGD7NB60M
N-CHANNEL 7A - 600V TO-220 / DPAK
PowerMESH™ IGBT
TYPE
V
I
C
CE(sat) (Max)
@25°C
V
CES
@100°C
STGP7NB60M 600 V
STGD7NB60M 600 V
< 1.9 V
< 1.9 V
7 A
7 A
3
■
■
■
■
■
■
■
HIGH INPUT IMPEDANCE
LOW ON-VOLTAGE DROP (V
3
1
2
1
)
cesat
DPAK
TO-220
OFF LOSSES INCLUDE TAIL CURRENT
LOW GATE CHARGE
HIGH CURRENT CAPABILITY
HIGH FREQUENCY OPERATION
CO-PACKAGED WITH TURBOSWITCH™
ANTIPARALLEL DIODE
INTERNAL SCHEMATIC DIAGRAM
DESCRIPTION
Using the latest high voltage technology based on a
patented strip layout, STMicroelectronics has de-
signed an advanced family of IGBTs, the Power-
MESH™ IGBTs, with outstanding perfomances.
The suffix "M" identifies a family optimized to
achieve very low switching switching times for high
frequency applications (<20KHZ)
APPLICATIONS
■
MOTOR CONTROLS
■
SMPS AND PFC AND BOTH HARD SWITCH
AND RESONANT TOPOLOGIES
ORDERING INFORMATION
SALES TYPE
MARKING
GP7NB60M
GD7NB60M
PACKAGE
PACKAGING
TUBE
STGP7NB60M
TO-220
DPAK
STGD7NB60MT4
TAPE & REEL
June 2003
1/11
STGP7NB60M - STGD7NB60M
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
TO-220
DPAK
V
Collector-Emitter Voltage (V = 0)
600
±20
14
V
V
CES
GS
V
Gate-Emitter Voltage
GE
I
Collector Current (continuous) at T = 25°C
A
C
C
I
Collector Current (continuous) at T = 100°C
7
A
C
C
I
( )
Collector Current (pulsed)
56
A
CM
P
TOT
Total Dissipation at T = 25°C
80
70
W
C
Derating Factor
0.64
0.56
W/°C
°C
°C
T
stg
Storage Temperature
– 55 to 150
150
T
Max. Operating Junction Temperature
j
( ) Pulse width limited by safe operating area
THERMAL DATA
TO-220
1.56
DPAK
1.78
100
Rthj-case Thermal Resistance Junction-case Max
Rthj-amb Thermal Resistance Junction-ambient Max
°C/W
°C/W
62.5
ELECTRICAL CHARACTERISTICS (T
= 25 °C UNLESS OTHERWISE SPECIFIED)
CASE
OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
Collector-Emitter Breakdown
Voltage
I
C
= 250 µA, V = 0
600
V
BR(CES)
GE
I
Collector cut-off
(V = 0)
GE
V
V
V
= Max Rating, T = 25 °C
50
µA
µA
nA
CES
CE
C
= Max Rating, T = 125 °C
100
CE
GE
C
I
Gate-Emitter Leakage
= ± 20V , V = 0
±100
GES
CE
Current (V = 0)
CE
ON (1)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
5
Unit
V
V
V
CE
V
GE
V
GE
= V , I = 250 µA
Gate Threshold Voltage
3
GE(th)
GE
C
V
Collector-Emitter Saturation
Voltage
= 15V, I = 7 A
1.5
1.2
1.9
V
CE(sat)
C
= 15V, I = 7 A, Tj =125°C
V
C
2/11
STGP7NB60M - STGD7NB60M
ELECTRICAL CHARACTERISTICS (CONTINUED)
DYNAMIC
Symbol
Parameter
Forward Transconductance
Input Capacitance
Test Conditions
Min.
Typ.
5
Max.
Unit
S
g
fs
(1)
V
V
= 25 V, Ic = 7 A
CE
CE
C
C
= 25V, f = 1 MHz, V = 0
550
85
pF
pF
pF
ies
GE
Output Capacitance
oes
C
res
Reverse Transfer
Capacitance
13
Q
V
V
= 480V, I = 7 A,
= 15V
37
4.2
13
50
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
nC
nC
nC
g
CE
GE
C
Q
ge
Q
gc
I
Latching Current
V
= 480 V, V = 15V
28
A
CL
clamp
GE
Tj = 125°C , R = 10 Ω
G
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
V
= 480 V, I = 7 A R = 10Ω
Turn-on Delay Time
Rise Time
13
6
ns
ns
d(on)
CC C G
t
r
, V = 15 V
GE
(di/dt)
Eon
Turn-on Current Slope
Turn-on Switching Losses
V
V
= 480 V, I = 7 A R =10Ω
= 15 V,Tj =125°C
1000
50
A/µs
µJ
on
CC
C
G
GE
SWITCHING OFF
Symbol
Parameter
Cross-over Time
Test Conditions
Min.
Typ.
340
95
Max.
Unit
ns
ns
ns
ns
µJ
µJ
ns
ns
ns
ns
µJ
µJ
t
V
R
= 480 V, I = 7 A,
c
cc
C
= 10 Ω , V = 15 V
G
GE
t (V
)
Off Voltage Rise Time
Delay Time
r
off
t (
)
155
240
455
500
610
215
280
390
870
920
d off
t
Fall Time
f
E
(**)
Turn-off Switching Loss
Total Switching Loss
Cross-over Time
Off Voltage Rise Time
Delay Time
off
E
t
ts
V
R
= 480 V, I = 7 A,
c
cc
C
= 10 Ω , V = 15 V
G
GE
t (V
)
r
off
Tj = 125 °C
t (
)
d off
t
Fall Time
f
E
(**)
off
Turn-off Switching Loss
Total Switching Loss
E
ts
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by max. junction temperature.
(**)Losses include Also the Tail (Jedec Standardization)
3/11
STGP7NB60M - STGD7NB60M
Output Characteristics
Transfer Characteristics
Transconductance
Normalized Collector-Emitter On Voltage vs Temp.
Gate Threshold vs Temperature
Collector-Emitter On Voltage vs Collector Current
4/11
STGP7NB60M - STGD7NB60M
Capacitance Variations
Normalized Breakdown Voltage vs Temperature
Total Switching Losses vs Gate Resistance
Gate Charge vs Gate-Emitter Voltage
Total Switching Losses vs Collector Current
Total Switching Losses vs Temperature
5/11
STGP7NB60M - STGD7NB60M
Thermal Impedance for TO-220
Thermal Impedance for DPAK
Turn-Off SOA
6/11
STGP7NB60M - STGD7NB60M
Fig. 1: Gate Charge test Circuit
Fig. 2: Test Circuit For Inductive Load Switching
7/11
STGP7NB60M - STGD7NB60M
TO-220 MECHANICAL DATA
mm.
inch
TYP.
DIM.
MIN.
TYP
MAX.
4.60
0.88
1.70
0.70
15.75
10.40
2.70
5.15
1.32
6.60
2.72
14
MIN.
0.173
0.024
0.045
0.019
0.60
MAX.
0.181
0.034
0.066
0.027
0.620
0.409
0.106
0.202
0.052
0.256
0.107
0.551
0.154
A
b
4.40
0.61
1.15
0.49
15.25
10
b1
c
D
E
0.393
0.094
0.194
0.048
0.244
0.094
0.511
0.137
e
2.40
4.95
1.23
6.20
2.40
13
e1
F
H1
J1
L
L1
L20
L30
øP
Q
3.50
3.93
16.40
28.90
0.645
1.137
3.75
2.65
3.85
2.95
0.147
0.104
0.151
0.116
8/11
STGP7NB60M - STGD7NB60M
TO-252 (DPAK) MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
2.20
0.90
0.03
0.64
5.20
0.45
0.48
6.00
6.40
4.40
9.35
TYP.
MAX.
2.40
1.10
0.23
0.90
5.40
0.60
0.60
6.20
6.60
4.60
10.10
MIN.
0.087
0.035
0.001
0.025
0.204
0.018
0.019
0.236
0.252
0.173
0.368
MAX.
0.094
0.043
0.009
0.035
0.213
0.024
0.024
0.244
0.260
0.181
0.398
A
A1
A2
B
B2
C
C2
D
E
G
H
L2
L4
V2
0.8
0.031
0.60
0o
1.00
8o
0.024
0o
0.039
0o
P032P_B
9/11
STGP7NB60M - STGD7NB60M
DPAK FOOTPRINT
TUBE SHIPMENT (no suffix)*
All dimensions
are in millimeters
All dimensions are in millimeters
TAPE AND REEL SHIPMENT (suffix ”T4”)*
REEL MECHANICAL DATA
mm
MIN. MAX. MIN. MAX.
330 12.992
inch
DIM.
A
B
C
D
G
N
T
1.5
12.8
20.2
16.4
50
0.059
13.2 0.504 0.520
0.795
18.4 0.645 0.724
1.968
22.4
0.881
BASE QTY
BULK QTY
2500
TAPE MECHANICAL DATA
2500
mm
MIN. MAX. MIN. MAX.
6.8 0.267 0.275
10.4 10.6 0.409 0.417
12.1 0.476
inch
DIM.
A0
B0
B1
D
7
1.5
1.5
1.6 0.059 0.063
0.059
D1
E
1.65 1.85 0.065 0.073
7.4 7.6 0.291 0.299
2.55 2.75 0.100 0.108
F
K0
P0
P1
P2
R
3.9
7.9
1.9
40
4.1 0.153 0.161
8.1 0.311 0.319
2.1 0.075 0.082
1.574
W
15.7
16.3 0.618 0.641
* on sales type
10/11
STGP7NB60M - STGD7NB60M
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
© The ST logo is a registered trademark of STMicroelectronics
© 2003 STMicroelectronics - Printed in Italy - All Rights Reserved
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11/11
相关型号：
STGD8NC60K
N-channel 600V - 8A - D2PAK / DPAK / TO-220 Short circuit rated PowerMESH IGBT
STMICROELECTR
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