STP9NM60 [ETC]
N-CHANNEL 600V 0.55 OHM 8.3A TO-220/DPAK/IPAK ZENER-PROTECTED MDMESH POWER MOSFET ; N沟道600V 0.55 OHM 8.3A TO-220 / DPAK / IPAK齐纳保护的MDmesh功率MOSFET\n
| 型号： | STP9NM60 |
| 厂家： | 
ETC |
| 描述： | N-CHANNEL 600V 0.55 OHM 8.3A TO-220/DPAK/IPAK ZENER-PROTECTED MDMESH POWER MOSFET
|
| 文件： | 总9页 (文件大小：339K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STP9NM60
STD9NM60 - STD9NM60-1
N-CHANNEL 600V - 0.55Ω - 8.3A TO-220/DPAK/IPAK
Zener-Protected MDmesh™Power MOSFET
TARGET DATA
TYPE
V
R
I
D
Pw
DSS
DS(on)
STP9NM60
STD9NM60
STD9NM60-1
600 V < 0.60 Ω 8.3 A 100 W
600 V < 0.60 Ω 8.3 A 100 W
600 V < 0.60 Ω 8.3 A 100 W
3
2
■
■
■
■
TYPICAL R (on) = 0.55 Ω
DS
1
HIGH dv/dt AND AVALANCHE CAPABILITIES
IMPROVED ESD CAPABILITY
LOW INPUT CAPACITANCE AND GATE
CHARGE
IPAK
TO-220
■
■
LOW GATE INPUT RESISTANCE
TIGHT PROCESS CONTROL AND HIGH
MANUFACTORING YIELDS
3
1
DPAK
DESCRIPTION
The MDmesh™ is a new revolutionary MOSFET
technology that associates the Multiple Drain pro-
cess with the Company’s PowerMESH™ horizontal
layout. The resulting product has an outstanding low
on-resistance, impressively high dv/dt and excellent
avalanche characteristics. The adoption of the
Company’s proprietary strip technique yields overall
dynamic performance that is significantly better than
that of similar completition’s products.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
The MDmesh™ family is very suitable for increase
the power density of high voltage converters allow-
ing system miniaturization and higher efficiencies.
ORDERING INFORMATION
SALES TYPE
MARKING
P9NM60
D9NM60
D9NM60
PACKAGE
TO-220
DPAK
PACKAGING
TUBE
STP9NM60
STD9NM60T4
STD9NM60-1
TAPE & REEL
TUBE
IPAK
June 2003
1/9
STP9NM60 / STD9NM60 / STD9NM60-1
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
600
600
± 30
8.3
Unit
V
V
DS
Drain-source Voltage (V = 0)
GS
V
Drain-gate Voltage (R = 20 kΩ)
V
DGR
GS
V
Gate-source Voltage
V
GS
I
Drain Current (continuous) at T = 25°C
A
D
C
I
Drain Current (continuous) at T = 100°C
5.2
A
D
C
I
( )
Drain Current (pulsed)
33.2
100
0.8
A
DM
P
Total Dissipation at T = 25°C
W
TOT
C
Derating Factor
W/°C
V/ns
dv/dt (1)
Peak Diode Recovery voltage slope
15
T
T
stg
Operating Junction Temperature
Storage Temperature
j
-65 to 150
°C
( ) Pulse width limited by safe operating area
(1) I ≤7A, di/dt ≤400 µA, V ≤ V
, T ≤ T
j JMAX.
SD
DD
(BR)DSS
THERMAL DATA
DPAK
IPAK
TO-220
Rthj-case
Rthj-amb
Thermal Resistance Junction-case Max
1.25
300
°C/W
°C/W
°C
Thermal Resistance Junction-ambient Max
Maximum Lead Temperature For Soldering Purpose
62.5
100
T
l
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
I
Avalanche Current, Repetitive or Not-Repetitive
3.5
A
AR
(pulse width limited by T max)
j
E
Single Pulse Avalanche Energy
TBD
mJ
AS
(starting T = 25 °C, I = I , V = 50 V)
j
D
AR
DD
GATE-SOURCE ZENER DIODE
Symbol
BV
Parameter
Test Conditions
Igs=± 1mA (Open Drain)
Min.
Typ.
Max.
Unit
Gate-Source Breakdown
Voltage
30
V
GSO
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
2/9
STP9NM60 / STD9NM60 / STD9NM60-1
ELECTRICAL CHARACTERISTICS (T
=25°C UNLESS OTHERWISE SPECIFIED)
CASE
ON/OFF
Symbol
Parameter
Drain-source
Test Conditions
Min.
Typ.
Max.
Unit
V
I
= 250 µA, V = 0
600
V
(BR)DSS
D
GS
Breakdown Voltage
I
Zero Gate Voltage
V
V
= Max Rating
DS
1
10
µA
µA
DSS
Drain Current (V = 0)
= Max Rating, T = 125 °C
GS
DS
C
I
Gate-body Leakage
V
= ± 20V
±5
µA
GSS
GS
Current (V = 0)
DS
V
V
V
= V , I = 250µA
Gate Threshold Voltage
3
4
5
V
GS(th)
DS
GS
GS
D
R
Static Drain-source On
Resistance
= 10V, I = 3.5 A
0.55
0.60
Ω
DS(on)
D
DYNAMIC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
(1)
Forward Transconductance
V
= 15 V I = 4.1 A
TBD
S
fs
DS
, D
C
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
= 25 V, f = 1 MHz, V = 0
580
160
20
pF
pF
pF
iss
DS
GS
C
oss
C
rss
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
Turn-on Delay Time
Rise Time
V
R
= 300 V, I = 4.1 A
= 4.7Ω V = 10 V
GS
TBD
TBD
ns
ns
d(on)
DD
D
t
r
G
(Resistive Load see, Figure 3)
Q
Q
Q
V
V
= 480 V, I = 8.3 A,
= 10 V
30
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
22
TBD
TBD
nC
nC
nC
g
DD
GS
D
gs
gd
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Min.
Typ.
Max.
Unit
t
V
R
= 480 V, I = 8.3 A,
r(Voff)
Off-voltage Rise Time
Fall Time
Cross-over Time
DD
D
TBD
TBD
TBD
ns
ns
ns
t
f
= 4.7Ω, V = 10V
G
GS
t
c
(Inductive Load see, Figure 5)
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Typ.
Max.
Unit
I
TBD
TBD
A
A
Source-drain Current
Source-drain Current (pulsed)
SD
(2)
I
SDM
V
(1)
I
I
= 8.3 A, V = 0
Forward On Voltage
TBD
V
SD
SD
SD
GS
t
= 8.3 A, di/dt = 100A/µs
= 100 V, T = 25°C
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
TBD
TBD
TBD
ns
µC
A
rr
Q
V
DD
rr
j
I
(see test circuit, Figure 5)
RRM
t
Q
I
= 8.3 A, di/dt = 100A/µs
= 100 V, T = 150°C
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
TBD
TBD
TBD
ns
µC
A
rr
SD
V
DD
rr
j
I
(see test circuit, Figure 5)
RRM
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3/9
STP9NM60 / STD9NM60 / STD9NM60-1
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuit For
Fig. 4: Gate Charge test Circuit
Resistive Load
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
4/9
STP9NM60 / STD9NM60 / STD9NM60-1
TO-220 MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
4.40
1.23
2.40
TYP.
MAX.
4.60
1.32
2.72
MIN.
0.173
0.048
0.094
MAX.
0.181
0.051
0.107
A
C
D
D1
E
1.27
0.050
0.49
0.61
1.14
1.14
4.95
2.4
0.70
0.88
1.70
1.70
5.15
2.7
0.019
0.024
0.044
0.044
0.194
0.094
0.393
0.027
0.034
0.067
0.067
0.203
0.106
0.409
F
F1
F2
G
G1
H2
L2
L4
L5
L6
L7
L9
DIA.
10.0
10.40
16.4
0.645
13.0
2.65
15.25
6.2
14.0
2.95
15.75
6.6
0.511
0.104
0.600
0.244
0.137
0.147
0.551
0.116
0.620
0.260
0.154
0.151
3.5
3.93
3.85
3.75
L2
Dia.
L5
L9
L7
L6
L4
P011C
5/9
STP9NM60 / STD9NM60 / STD9NM60-1
TO-252 (DPAK) MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
2.20
0.90
0.03
0.64
5.20
0.45
0.48
6.00
6.40
4.40
9.35
TYP.
MAX.
2.40
1.10
0.23
0.90
5.40
0.60
0.60
6.20
6.60
4.60
10.10
MIN.
0.087
0.035
0.001
0.025
0.204
0.018
0.019
0.236
0.252
0.173
0.368
MAX.
0.094
0.043
0.009
0.035
0.213
0.024
0.024
0.244
0.260
0.181
0.398
A
A1
A2
B
B2
C
C2
D
E
G
H
L2
L4
V2
0.8
0.031
0.60
0o
1.00
8o
0.024
0o
0.039
0o
P032P_B
6/9
STP9NM60 / STD9NM60 / STD9NM60-1
TO-251 (IPAK) MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
2.2
TYP.
MAX.
2.4
MIN.
0.086
0.035
0.027
0.025
0.204
MAX.
0.094
0.043
0.051
0.031
0.212
0.033
A
A1
A3
B
0.9
1.1
0.7
1.3
0.64
5.2
0.9
B2
B3
B5
B6
C
5.4
0.85
0.3
0.012
0.95
0.6
0.6
6.2
6.6
4.6
16.3
9.4
1.2
1
0.037
0.023
0.023
0.244
0.260
0.181
0.641
0.370
0.047
0.039
0.45
0.48
6
0.017
0.019
0.236
0.252
0.173
0.626
0.354
0.031
C2
D
E
6.4
4.4
15.9
9
G
H
L
L1
L2
0.8
0.8
0.031
H
L
D
L2
L1
0068771-E
7/9
STP9NM60 / STD9NM60 / STD9NM60-1
DPAK FOOTPRINT
TUBE SHIPMENT (no suffix)*
All dimensions
are in millimeters
All dimensions are in millimeters
TAPE AND REEL SHIPMENT (suffix ”T4”)*
REEL MECHANICAL DATA
mm
MIN. MAX. MIN. MAX.
330 12.992
inch
DIM.
A
B
C
D
G
N
T
1.5
12.8
20.2
16.4
50
0.059
13.2 0.504 0.520
0.795
18.4 0.645 0.724
1.968
22.4
0.881
BASE QTY
BULK QTY
2500
TAPE MECHANICAL DATA
2500
mm
MIN. MAX. MIN. MAX.
6.8 0.267 0.275
10.4 10.6 0.409 0.417
12.1 0.476
inch
DIM.
A0
B0
B1
D
7
1.5
1.5
1.6 0.059 0.063
0.059
D1
E
1.65 1.85 0.065 0.073
7.4 7.6 0.291 0.299
2.55 2.75 0.100 0.108
F
K0
P0
P1
P2
R
3.9
7.9
1.9
40
4.1 0.153 0.161
8.1 0.311 0.319
2.1 0.075 0.082
1.574
W
15.7
16.3 0.618 0.641
* on sales type
8/9
STP9NM60 / STD9NM60 / STD9NM60-1
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
© The ST logo is a registered trademark of STMicroelectronics
© 2003 STMicroelectronics - Printed in Italy - All Rights Reserved
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9/9
相关型号：
STP9NM60N
N-channel 600 V, 0.63 ohm, 6.5 A TO-220, TO-220FP, DPAK MDmesh ll Power MOSFET
STMICROELECTR
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