STPS5L25B-TR [ETC]

LOW DROP POWER SCHOTTKY RECTIFIER ; 电力低压降肖特基整流器
STPS5L25B-TR
型号: STPS5L25B-TR
厂家: ETC    ETC
描述:

LOW DROP POWER SCHOTTKY RECTIFIER
电力低压降肖特基整流器

二极管 功效 局域网
文件: 总4页 (文件大小:54K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
STPS5L25B  
®
LOW DROP POWER SCHOTTKY RECTIFIER  
MAIN PRODUCT CHARACTERISTICS  
2
IF(AV)  
VRRM  
5 A  
4 (TAB)  
3
25 V  
Tj (max)  
VF (max)  
150°C  
0.35 V  
4
FEATURES AND BENEFITS  
3
VERY LOW FORWARD VOLTAGE DROP FOR  
LESS POWER DISSIPATION AND REDUCED  
HEATSINK  
2
1
NC  
OPTIMIZED CONDUCTION/REVERSE LOSSES  
TRADE-OFF WHICH MEANS THE HIGHEST  
EFFICIENCY IN THE APPLICATIONS  
HIGH POWER SURFACE MOUNT MINIATURE  
PACKAGE  
DPAK  
AVALANCHE CAPABILITY SPECIFIED  
DESCRIPTION  
Single Schottky rectifier suited to Switched Mode  
Power Supplies and high frequency DC to DC con-  
verters.  
This device is especially intended for use as a  
Rectifier at the secondary of 3.3V SMPS units.  
ABSOLUTE RATINGS (limiting values)  
Symbol  
Parameter  
Repetitive peak reverse voltage  
Value  
Unit  
V
VRRM  
25  
7
IF(RMS) RMS forward current  
A
IF(AV)  
IFSM  
IRRM  
IRSM  
PARM  
Tstg  
Average forward current  
Tc = 145°C δ = 0.5  
5
A
Surge non repetitive forward current  
Repetitive peak reverse current  
Non repetitive peak reverse current  
Repetitive peak avalanche power  
Storage temperature range  
tp = 10 ms Sinusoidal  
75  
1
A
tp=2 µs square F=1kHz  
tp = 100 µs square  
tp = 1µs Tj = 25°C  
A
2
A
3000  
W
°C  
°C  
V/µs  
- 65 to + 150  
150  
Tj  
Maximum operating junction temperature *  
dV/dt  
dPtot  
Critical rate of rise of reverse voltage  
1
10000  
* :  
<
thermal runaway condition for a diode on its own heatsink  
dTj  
Rth(j a)  
July 2003 - Ed: 5A  
1/4  
STPS5L25B  
THERMAL RESISTANCES  
Symbol  
Parameter  
Value  
Unit  
Rth(j-c)  
Junction to case  
2.5  
°C/W  
STATIC ELECTRICAL CHARACTERISTICS  
Symbol  
Tests Conditions  
Tests Conditions  
Min. Typ. Max.  
Unit  
µA  
mA  
V
IR *  
Reverse leakage current  
Tj = 25°C  
VR = VRRM  
350  
Tj = 125°C  
Tj = 25°C  
Tj = 125°C  
Tj = 25°C  
Tj = 125°C  
55  
115  
0.47  
0.35  
0.59  
0.50  
VF *  
Forward voltage drop  
IF = 5 A  
IF = 5 A  
IF = 10 A  
IF = 10 A  
0.31  
0.41  
Pulse test : * tp = 380 µs, δ < 2%  
Fig. 1: Average forward power dissipation versus  
average forward current.  
Fig. 2: Average forward current versus ambient  
temperature (δ=0.5).  
PF(av)(W)  
IF(av)(A)  
6
2.5  
δ = 0.2  
δ = 0.1  
δ = 0.5  
Rth(j-a)=Rth(j-c)  
5
2.0  
1.5  
1.0  
0.5  
0.0  
δ = 0.05  
4
δ = 1  
Rth(j-a)=70°C/W  
3
2
T
T
1
Tamb(°C)  
tp  
=tp/T  
δ
tp  
IF(av) (A)  
=tp/T  
δ
0
0
25  
50  
75  
100  
125  
150  
0
1
2
3
4
5
6
Fig. 3: Normalized avalanche power derating  
versus pulse duration.  
Fig. 4: Normalized avalanche power derating  
versus junction temperature.  
P
(t )  
p
(1µs)  
ARM  
P
ARM  
(t )  
p
(25°C)  
ARM  
P
ARM  
P
1
1.2  
1
0.1  
0.8  
0.6  
0.4  
0.2  
0
0.01  
T (°C)  
j
t (µs)  
p
0.001  
0
25  
50  
75  
100  
125  
150  
0.01  
0.1  
1
10  
100  
1000  
2/4  
STPS5L25B  
Fig. 5: Non repetitive surge peak forward current  
versus overload duration (maximum values).  
Fig. 5: Relative variation of thermal impedance  
junction to case versus pulse duration.  
IM(A)  
Zth(j-c)/Rth(j-c)  
100  
1.0  
80  
0.8  
Tc=25°C  
60  
δ = 0.5  
0.6  
Tc=75°C  
40  
0.4  
δ = 0.2  
T
Tc=100°C  
IM  
20  
Single pulse  
0.2  
δ = 0.1  
t
t(s)  
tp  
=tp/T  
δ
δ=0.5  
tp(s)  
0
0.0  
1.0E-4  
1E-3  
1E-2  
1E-1  
1E+0  
1.0E-3  
1.0E-2  
1.0E-1  
1.0E+0  
Fig. 7: Reverse leakage current versus reverse  
voltage applied (typical values).  
Fig. 8: Junction capacitance versus reverse  
voltage applied (typical values).  
IR(mA)  
C(pF)  
3E+2  
Tj=150°C  
1E+2  
2000  
F=1MHz  
Tj=25°C  
Tj=125°C  
1E+1  
1000  
500  
1E+0  
1E-1  
Tj=25°C  
200  
1E-2  
VR(V)  
VR(V)  
100  
1E-3  
1
2
5
10  
20  
30  
0
5
10  
15  
20  
25  
Fig. 9: Forward voltage drop versus forward  
current (maximum values).  
Fig. 10: Thermal resistance junction to ambient  
versus copper surface under tab (Epoxy printed  
circuit board FR4, copper thickness: 35µm).  
Rth(j-a) (°C/W)  
IFM(A)  
100.0  
100  
Typical values  
Tj=150°C  
80  
60  
40  
20  
0
10.0  
Tj=125°C  
Tj=25°C  
1.0  
VFM(V)  
0
2
4
6
8
10  
12  
14  
16  
18  
20  
0.1  
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0  
S(Cu) (cm²)  
3/4  
STPS5L25B  
PACKAGE MECHANICAL DATA  
DPAK  
DIMENSIONS  
Millimeters Inches  
Min. Min.  
REF.  
Max  
2.40  
1.10  
0.23  
0.90  
5.40  
0.60  
0.60  
6.20  
6.60  
4.60  
10.10  
Max.  
0.094  
0.043  
0.009  
0.035  
0.212  
0.023  
0.023  
0.244  
0.259  
0.181  
0.397  
A
A1  
A2  
B
2.20  
0.90  
0.03  
0.64  
5.20  
0.45  
0.48  
6.00  
6.40  
4.40  
9.35  
0.086  
0.035  
0.001  
0.025  
0.204  
0.017  
0.018  
0.236  
0.251  
0.173  
0.368  
B2  
C
C2  
D
E
G
H
L2  
L4  
V2  
0.80 typ.  
0.031 typ.  
0.60  
0°  
1.00  
8°  
0.023  
0°  
0.039  
8°  
FOOT PRINT DIMENSIONS (in millimeters)  
6.7  
6.7  
3
3
1.6  
1.6  
2.3 2.3  
Ordering type  
STPS5L25B  
Marking  
Package  
DPAK  
Weight  
0.30g  
Base qty  
75  
Delivery mode  
Tube  
STPS5L25B  
STPS5L25B  
STPS15LB-TR  
DPAK  
0.30g  
2500  
Tape & reel  
Epoxy meets UL94,V0  
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of  
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by  
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to  
change without notice. This publication supersedes and replaces all information previously supplied.  
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written  
approval of STMicroelectronics.  
The ST logo is a registered trademark of STMicroelectronics  
© 2003 STMicroelectronics - Printed in Italy - All rights reserved.  
STMicroelectronics GROUP OF COMPANIES  
Australia - Brazil - Canada - China - Finland - France - Germany  
Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore  
Spain - Sweden - Switzerland - United Kingdom - United States.  
http://www.st.com  
4/4  

相关型号:

STPS5L25_08

Low drop power Schottky rectifier
STMICROELECTR

STPS5L40

POWER SCHOTTKY RECTIFIER
STMICROELECTR

STPS5L40-C2

POWER SCHOTTKY RECTIFIER
ETC

STPS5L40C2

POWER SCHOTTKY RECTIFIER
ETC

STPS5L40RL

POWER SCHOTTKY RECTIFIER
STMICROELECTR

STPS5L60

POWER SCHOTTKY RECTIFIER
STMICROELECTR

STPS5L60-Y

Automotive power Schottky rectifier
STMICROELECTR

STPS5L60L

RECTIFIER DIODE
STMICROELECTR

STPS5L60RL

POWER SCHOTTKY RECTIFIER
STMICROELECTR

STPS5L60S

Power Schottky rectifier
STMICROELECTR

STPS5L60SF

60 V, 5 A PSMC Low Drop Power Schottky Rectifier
STMICROELECTR

STPS5L60SFY

Automotive 60 V, 5 A PSMC Low Drop Power Schottky Rectifier
STMICROELECTR