TP30-240RL [ETC]

TRISIL ; TRISIL\n


型号：	TP30-240RL
厂家：	ETC
描述：	TRISIL TRISIL\n
文件：	总6页 (文件大小：155K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

TP30-xxx Series

TRISIL^TM

FEATURES

BIDIRECTIONAL CROWBAR PROTECTION.

VOLTAGE RANGE: FROM 62 V TO 270 V.

HOLDING CURRENT :

I_H= 150 mA min.

REPETITIVE PEAK PULSE CURRENT :

I_PP= 30 A, 10/1000 µs.

JEDEC REGISTERED PACKAGE OUTLINE

DO-15

DESCRIPTION

SCHEMATIC DIAGRAM

The TP30-xxx series has been designed to protect

telecommunication equipment against lightning

surges and overvoltages induced by AC power

lines.

Peak Surge

Voltage

(V)

Voltage

Waveform

Current

Waveform

Admissible Necessary

COMPLIES WITH THE

FOLLOWING STANDARDS:

Ipp

(A)

Resistor

(µs)

(Ω)

(CCITT) ITU-K20

(CCITT) ITU-K17

VDE0433

1000

1500

2000

10/700

1.2/50

5/310

1/20

VDE0878

IEC-1000-4-5

level 2

level 3

10/700

1.2/50

5/310

8/20

FCC Part 68, lightning surge

type A

1500

800

10/160

10/560

10/160

10/560

15.5

8.0

FCC Part 68, lightning surge

type B

1000

9/720

5/320

BELLCORE TR-NWT-001089

First level

2500

1000

2/10

10/1000

2/10

10/1000

125

15.0

23.3

BELLCORE TR-NWT-001089

Second level

5000

2/10

125

15.0

CNET l31-24

1000

0.5/700

0.8/310

February 2003 - Ed: 6B

1/6

TP30-xxx Series

ABSOLUTE MAXIMUM RATINGS (T_amb= 25°C)

Symbol

Parameter

Power dissipation on infinite heatsink

Peak pulse current

Value

Unit

_amb= 50 °C

I_PP

10/1000 µs

8/20 µs

I_TSM

I²t

Non repetitive surge peak on-state current

I²t value for fusing

tp = 20 ms

V_RM

A²s

dV/dt

Critical rate of rise of off-state voltage

kV/µs

T_stg

T_j

Storage temperature range

Maximum junction temperature

- 55 to + 150

150

°C

T_L

Maximum lead temperature for soldering during 10s at 5mm for case

230

°C

THERMAL RESISTANCES

Symbol

Parameter

Value

Unit

°C/W

R_th(j-l)

Junction to leads

R_th(j-a)

100

Junction to ambient on printed circuit

with standard footprint dimension

ELECTRICAL CHARACTERISTICS

(T_amb= 25°C)

Symbol

V_RM

I_RM

V_R

Parameter

Stand-off voltage

Leakage current at stand-off voltage

Continuous Reverse voltage

Breakdown voltage

Breakover voltage

V_BR

V_BO

I_H

Holding current

I_BO

Breakover current

I_PP

Peak pulse current

Capacitance

2/6

TP30-xxx Series

I_R@ V_R

max

Type

I_RM@ V_RM

max

V_BO@ I_BO

max

I_H

min

typ

note 1

note 2

note 3

note 4

note 5

µA

TP30-62

TP30-68

108

117

162

180

198

216

243

800

150

TP30-100

TP30-120

TP30-130

TP30-180

TP30-200

TP30-220

TP30-240

TP30-270

100

120

130

180

200

220

240

270

133

160

173

240

267

293

320

360

Note 1:

measured at V guarantee V

BRmin

Note 2: Measured at 50 Hz (1 cycle) - See test circuit 1.

Note 3: See test circuit 2.

Note 4:

Note 5:

= 1V, F = 1MHz.

= 50V, F = 1MHz.

TEST CIRCUIT 1 FOR I_BOand V_BOparameters :

= 20ms

Auto

Transformer

220V/2A

140

static

relay.

240

measure

out

D.U.T

measure

Transformer

220V/800V

TEST PROCEDURE :

Pulse Test duration (tp = 20ms):

- For Bidirectional devices = Switch K is closed

- For Unidirectional devices = Switch K is open.

V_OUTSelection

- Device with V_BO< 250 Volt

- V_OUT= 250 V_RMS, R₁= 140 Ω.

- Device with V_BO250 Volt

- V_OUT= 480 V_RMS, R₂= 240 Ω.

3/6

TP30-xxx Series

TEST CIRCUIT 2 for I_Hparameter.

- V

D.U.T.

= - 48 V

BAT

Surge generator

This is a GO-NOGO Test which allows to confirm the holding current (I_H) level in a functional

test circuit.

TEST PROCEDURE :

1) Adjust the current level at the I_Hvalue by short circuiting the AK of the D.U.T.

2) Fire the D.U.T with a surge Current : Ipp = 10A , 10/1000 µs.

3) The D.U.T will come back off-state within 50 ms max.

4/6

TP30-xxx Series

Fig. 1: Non repetitive surge peak on-sate current

versus overload duration (Tj initial = 25°C).

Fig. 2: Relative variation of holding current versus

junction temperature.

IH[Tj] / IH[Tj=25°C]

ITSM(A)

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

F = 50Hz

1E-2

1E-1

1E+0

1E+1

1E+2

1E+3

-40

-20

100 120

t(s)

Tj(°C)

Fig. 3: Relative variation of junction capacitance

versus reverse applied voltage (typical values).

Fig. 4: On-state voltage versus on-state current

(typical values).

IT(A)

C[VR]/C[VR=1V]

1.0

Tj = 25°C

F = 1MHz

0.5

0.2

0.1

100

300

VR(V)

VT(V)

Fig. 6: Relative variation of V_BOvoltage versus

junction temperature.

Fig. 5: Variation of thermal impedance junction to

ambient versus pulse duration.

Vbo[Tj]/Vbo[Tj=25°C]

Zth(j-a)(°CW)

1.10

1E+2

1.05

1E+1

1E+0

1E-1

1.00 270 V

0.95

62 V

0.90

-40

-20

Tj(°C)

100

5/6

1E-3

1E-2

1E-1

1E+0

tp(s)

1E+1

1E+2 5E+2

TP30-xxx Series

ORDER CODE

TP 30 - 62

TRISIL PROTECTION

VOLTAGE

I_PP= 30 A

MARKING : Logo, Date Code, Part Number.

PACKAGE MECHANICAL DATA

DO-15 (Plastic)

REF.

DIMENSIONS

Millimeters Inches

Min. Max.

Min.

Max.

6.05

6.75

0.238

0.116

1.024

0.028

0.266

2.95

3.53

0.139

1.220

0.035

0.71

0.88

Packaging : Tape and reel.

Weight : 0.4 g.

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of

use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by

implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to

change without notice. This publication supersedes and replaces all information previously supplied.

STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written

approval of STMicroelectronics.

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6/6

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