TS512AIDT [ETC]
OP-AMP|DUAL|BIPOLAR|SOP|8PIN|PLASTIC ;
| 型号： | TS512AIDT |
| 厂家： | 
ETC |
| 描述： | OP-AMP|DUAL|BIPOLAR|SOP|8PIN|PLASTIC 放大器 光电二极管 |
| 文件： | 总6页 (文件大小：50K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TS512,A
PRECISION DUAL OPERATIONAL AMPLIFIER
■ LOW INPUT OFFSET VOLTAGE:
500µV max.
■ LOW POWER CONSUMPTION
■ SHORT CIRCUIT PROTECTION
■ LOW DISTORTION, LOW NOISE
■ HIGH GAIN-BANDWIDTH PRODUCT:
N
DIP8
(Plastic Package)
3MHz
■ HIGH CHANNEL SEPARATION
■ ESD INTERNAL PROTECTION
■ LOW INPUT OFFSER CURRENT
■ MACROMODEL INCLUDED IN THIS
SPECIFICATION
D
SO8
DESCRIPTION
(Plastic Micropackage)
The TS512 is a high performance dual operational
amplifier with frequency and phase compensation
built into the chip. The internal phase compensa-
tion allows stable operation as voltage follower in
spite of its high gain-bandwidth products.
ORDER CODE
Package
Part Number Temperature Range
N
D
The circuit presents very stable electrical charac-
teristics over the entire supply voltage range, and
is particularly intended for professional and tele-
com applications (active filter, etc).
TS512I
-40°C, +125°C
-40°C, +125°C
•
•
•
•
TS512AI
N = Dual in Line Package (DIP)
D = Small Outline Package (SO) - also available in Tape & Reel (DT)
PIN CONNECTIONS (top view)
+
8
7
V
Output 1 1
CC
Output
Inverting Input 1 2
-
+
Inverting Input 2
6
5
Non-inverting Input 1 3
-
Non-inverting Input 2
+
-
V
CC
4
November 2001
1/6
TS512, A
SCHEMATIC DIAGRAM (1/2 TS512)
VCC
R16
R1
R2
R5
R6
R11
R18
4kΩ
2kΩ
2kΩ
4kΩ
1kΩ
2kΩ
4kΩ
Q25
Q13
Q14
Q35
Q11
Q2
Q12
R12
812Ω
Q3
Q29
Q27
Q21
R13
27Ω
Q37
Q36
Non-inverting
Input
Inverting
Input
Output
Q38
R17
4kΩ
R14
Q15
Ω
27
Q22
Q28
Q5
C2
23pF
Q7
Q30
Q17
Q20
Q31
Q9
Q32
Q10
Q4
Q6
Q18
Q19
Q8
Q23
R8
150kΩ
C1
43pF
Q33
Q34
R15
150kΩ
R3
60kΩ
R4
1.2kΩ
R7
15kΩ
R9
15kΩ
R10
Ω
45k
VCC
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
Supply Voltage
±18
V
CC
V
±V
Input Voltage
i
CC
V
±(V - 1)
CC
Differential Input Voltage
id
T
Operating Free-Air Temperature Range
-40 to +125
500
°C
oper
1)
p
mW
Power Dissipation at T
= 70°C
tot
amb
T
Junction Temperature
Storage Temperature Range
+ 150
°C
°C
j
T
-65 to +150
stg
1.
Power dissipation must be considered to ensure maximum junction temperature (Tj) is not exceeded.
2/6
TS512, A
ELECTRICAL CHARACTERISTICS
V
= ±15V, T
= 25°C (unless otherwise specified)
amb
CC
Symbol
Parameter
Min.
Typ.
Max.
Unit
I
Supply Current
0.7
50
1.2
mA
cc
Input Bias Current
150
300
I
nA
ib
T
≤ T ≤ T
min
op max
R
Input Resistance, f = 1kHz
Input Offset Voltage
1
MΩ
i
TS512
TS512A
0.5
2.5
0.5
V
mv
io
T
≤ T ≤ T
max
TS512
TS512A
3.5
1.5
min
op
Input Offset Voltage Drift
∆V
µV/°C
io
T
≤ T ≤ T
2
5
min
op
max
Input Offset Current
≤ T ≤ T
20
40
I
nA
io
T
min
op
max
Input Offset Current Drift
≤ T ≤ T
nA
-------
°C
∆I
io
T
0.08
23
min
op
max
I
Output Short Circuit Current
Large Signal Voltage Gain
mA
os
R
= 2kΩ
V
V
= ±15V
cc
A
90
100
95
dB
L
vd
= ± 4V
cc
GBP
Gain-bandwidth Product, f = 100kHz
1.8
3
MHz
Equivalent Input Noise Voltage, f = 1kHz
nV
Rs = 50Ω
Rs = 1kΩ
Rs = 10kΩ
8
10
18
-----------
e
n
Hz
Total Harmonic Distortion
A = 20dB
R = 2kΩ
THD
0.03
%
v
L
V
= 2V
f = 1kHz
o
pp
Output Voltage Swing
= 2kΩ
R
V
= ±15V
= ± 4V
±V
±13
V
L
cc
opp
V
±3
cc
Large Signal Voltage Swing
= 10k
V
V
pp
opp
R
Ω
f = 10kHz
28
L
Slew Rate
SR
V/µs
Unity Gain, RL = 2kΩ
0.8
1.5
Common Mode Rejection Ratio
CMR
SVR
dB
V
= ±10V
90
90
ic
Supply Voltage Rejection Ratio
Channel Separation,
dB
dB
V
/V
f = 1kHz
120
o1 o2
3/6
TS512, A
MACROMODEL
FIBP 2 5 VOFN 1.000000E-02
FIBN 5 1 VOFP 1.000000E-02
* AMPLIFYING STAGE
FIP 5 19 VOFP 9.000000E+02
FIN 5 19 VOFN 9.000000E+02
RG1 19 5 1.727221E+06
RG2 19 4 1.727221E+06
CC 19 5 6.000000E-09
DOPM 19 22 MDTH 400E-12
DONM 21 19 MDTH 400E-12
HOPM 22 28 VOUT 6.521739E+03
VIPM 28 4 1.500000E+02
HONM 21 27 VOUT 6.521739E+03
VINM 5 27 1.500000E+02
GCOMP 5 4 4 5 6.485084E-04
RPM1 5 80 1E+06
** Standard Linear Ics Macromodels, 1993.
** CONNECTIONS :
* 1 INVERTING INPUT
* 2 NON-INVERTING INPUT
* 3 OUTPUT
* 4 POSITIVE POWER SUPPLY
* 5 NEGATIVE POWER SUPPLY
.SUBCKT TS512 1 3 2 4 5 (analog)
********************************************************
.MODEL MDTH D IS=1E-8 KF=6.565195E-17
CJO=10F
* INPUT STAGE
CIP 2 5 1.000000E-12
CIN 1 5 1.000000E-12
EIP 10 5 2 5 1
RPM2 4 80 1E+06
GAVPH 5 82 19 80 2.59E-03
RAVPHGH 82 4 771
RAVPHGB 82 5 771
RAVPHDH 82 83 1000
RAVPHDB 82 84 1000
CAVPHH 4 83 0.331E-09
CAVPHB 5 84 0.331E-09
EOUT 26 23 82 5 1
EIN 16 5 1 5 1
RIP 10 11 2.600000E+01
RIN 15 16 2.600000E+01
RIS 11 15 1.061852E+02
DIP 11 12 MDTH 400E-12
DIN 15 14 MDTH 400E-12
VOFP 12 13 DC 0
VOFN 13 14 DC 0
VOUT 23 5 0
IPOL 13 5 1.000000E-05
CPS 11 15 12.47E-10
DINN 17 13 MDTH 400E-12
VIN 17 5 1.500000e+00
DINR 15 18 MDTH 400E-12
VIP 4 18 1.500000E+00
FCP 4 5 VOFP 3.400000E+01
FCN 5 4 VOFN 3.400000E+01
ROUT 26 3 6.498455E+01
COUT 3 5 1.000000E-12
DOP 19 25 MDTH 400E-12
VOP 4 25 1.742230E+00
DON 24 19 MDTH 400E-12
VON 24 5 1.742230E+00
.ENDS
ELECTRICAL CHARACTERISTICS
V
cc
= ±15V, T
= 25°C (unless otherwise specified)
amb
Symbol
Conditions
Value
Unit
V
0
mV
V/mV
µA
io
A
R = 2kΩ
100
vd
L
I
No load, per operator
350
cc
V
-13.5 to 13.5
V
icm
V
R = 2kΩ
+13
-13
23
23
3
V
OH
L
V
R = 2kΩ
V
OL
L
I
V = 0V
mA
sink
o
I
V = 0V
mA
source
o
R = 2kΩ,
C
C
= 100pF
= 100pF
GBP
SR
m
MHz
V/µs
Degrees
L
L
R = 2kΩ
1.4
55
L
R = 2kΩ,
L
L
4/6
TS512, A
PACKAGE MECHANICAL DATA
8 PINS - PLASTIC DIP
Millimeters
Inches
Dim.
Min.
Typ.
Max.
Min.
Typ.
Max.
A
a1
B
3.32
0.131
0.51
1.15
0.020
0.045
0.014
0.008
1.65
0.55
0.065
0.022
0.012
0.430
0.384
b
0.356
0.204
b1
D
E
0.304
10.92
9.75
7.95
0.313
e
2.54
7.62
7.62
0.100
0.300
0.300
e3
e4
F
6.6
0260
0.200
0.150
0.060
i
5.08
3.81
1.52
L
3.18
0.125
Z
5/6
TS512, A
PACKAGE MECHANICAL DATA
8 PINS - PLASTIC MICROPACKAGE (SO)
L
c1
b
s
E
e3
D
M
5
8
1
4
Millimeters
Typ.
Inches
Typ.
Dim.
Min.
Max.
Min.
Max.
A
a1
a2
a3
b
1.75
0.25
1.65
0.85
0.48
0.25
0.5
0.069
0.010
0.065
0.033
0.019
0.010
0.020
0.1
0.004
0.65
0.35
0.19
0.25
0.026
0.014
0.007
0.010
b1
C
c1
D
45° (typ.)
4.8
5.8
5.0
6.2
0.189
0.228
0.197
0.244
E
e
1.27
3.81
0.050
0.150
e3
F
3.8
0.4
4.0
1.27
0.6
0.150
0.016
0.157
0.050
0.024
L
M
S
8° (max.)
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems withoutexpress written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
2001 STMicroelectronics - Printed in Italy - All Rights Reserved
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