TSDF5242X [ETC]

Consumer IC ; 消费性IC\n
TSDF5242X
型号: TSDF5242X
厂家: ETC    ETC
描述:

Consumer IC
消费性IC\n

文件: 总4页 (文件大小:51K)
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TSDF52424X/TSDF52424XR  
Vishay Telefunken  
Dual - MOSMIC – MOS Monolithic Integrated Circuit  
Two AGC Amplifiers for TV–Tuner Prestage with 5 V Supply Voltage  
MOSMIC - MOS Monolithic Integrated Circuit  
Electrostatic sensitive device.  
Observe precautions for handling.  
Applications  
Low noise gain controlled input stages in UHF-and VHF- tuners with 5 V supply voltage.  
Typical Application  
Features  
Amplifier 1 and 2  
Two AGC amplifiers in a single package  
2 (TSDF52424X)  
5 (TSDF52424XR)  
Integrated gate protection diodes  
Low noise figure  
AGC  
RFC  
C
+5 V  
G2 (common)  
High gain, medium forward transadmittance  
(24 mS typ.)  
D
3
4
AMP1  
C
C
RF out  
G1  
G1  
1
6
RF in  
Biasing network on chip  
Improved cross modulation at gain reduction  
High AGC-range with less steep slope  
SMD package, reverse pinning possible  
RFC  
C
+5 V  
D
AMP2  
RF out  
RF in  
S (common)  
5 (TSDF52424X)  
2 (TSDF52424XR)  
16761  
6
1
5
2
4
6
1
5
2
4
3
3
16762  
16763  
TSDF52424X Marking: WC2  
Plastic case (SOT 363)  
TSDF52424XR Marking: W2C  
Plastic case (SOT 363)  
1 = Gate 1 (amplifier 1), 2 = Gate 2,  
3 = Drain (amplifier 1), 4 = Drain (amplifier 2),  
5 = Source, 6 = Gate1 (amplifier 2)  
1 = Gate 1 (amplifier 1), 2 = Source,  
3 = Drain (amplifier 1), 4 = Drain (amplifier 2),  
5 = Gate2, 6 = Gate1 (amplifier 2)  
T = Telefunken  
Y = Year, is variable for digit from 0 to 9 (e.g. 0 = 2000, 1 = 2001)  
CW = Calendar Week, is variable for number from 01 to 52  
Number of Calendar Week is always indicating place of pin 1  
Document Number 85077  
Rev. 1, 24-Nov-00  
www.vishay.com  
1 (4)  
TSDF52424X/TSDF52424XR  
Vishay Telefunken  
All of following data and characteristics are valid for operating either  
amplifier 1 (pin 1, 3, 2, 5) or amplifier 2 (pin 6, 4, 2, 5)  
Absolute Maximum Ratings  
T
amb  
= 25 C, unless otherwise specified  
Parameter  
Drain - source voltage  
Test Conditions  
Symbol  
Value  
8
Unit  
V
V
DS  
Drain current  
I
25  
10  
6
200  
150  
mA  
mA  
V
mW  
C
D
Gate 1/Gate 2 - source peak current  
Gate 1/Gate 2 - source voltage  
Total power dissipation  
Channel temperature  
±I  
±V  
G1/G2SM  
G1/G2SM  
T
amb  
60 C  
P
tot  
T
Ch  
Storage temperature range  
T
stg  
–55 to +150  
C
Maximum Thermal Resistance  
T
amb  
= 25 C, unless otherwise specified  
Parameter  
Channel ambient  
Test Conditions  
on glass fibre printed board  
(25 x 20 x 1.5) mm plated with 35 m Cu  
Symbol  
Value  
450  
Unit  
K/W  
R
thChA  
3
Electrical DC Characteristics  
T
amb  
= 25 C, unless otherwise specified  
Parameter  
Test Conditions  
Symbol  
Min Typ Max Unit  
±I  
±I  
+V  
–V  
= 10 mA, V  
= 10 mA, V  
= 5 V, V  
= V = 0  
±V  
7
7
10  
10  
50  
Gate 1 - source  
breakdown voltage  
G1S  
G2S  
DS  
(BR)G1SS  
±V  
(BR)G2SS  
V
= V = 0  
G2S  
G1S  
DS  
= V = 0  
+I  
–I  
Gate 1 - source  
leakage current  
G1S  
G2S  
DS  
G1SS  
G1SS  
A
= 5 V, V  
= V = 0  
100  
G1S  
G2S  
G2S  
DS  
Gate 2 - source  
leakage current  
Drain current  
Self-biased  
operating current  
±V  
= 5 V, V  
= V = 0  
±I  
20  
nA  
A
G1S  
DS  
G2SS  
DSS  
V
DS  
V
DS  
= 5 V, V  
= 0, V = 4 V  
G2S  
I
I
50  
8
500  
G1S  
= 5 V, V  
= 5 V, V  
= nc, V  
= 4 V  
13  
18 mA  
V
G1S  
G1S  
G2S  
DSP  
Gate 2 - source  
cut-off voltage  
V
DS  
= nc, I = 20 A  
V
G2S(OFF)  
1.0  
D
www.vishay.com  
2 (4)  
Document Number 85077  
Rev. 1, 24-Nov-00  
TSDF52424X/TSDF52424XR  
Vishay Telefunken  
Electrical AC Characteristics  
V
DS  
= 5 V, V  
= 4 V, I = I  
, f = 1 MHz , T = 25 C, unless otherwise specified  
amb  
G2S  
D
DSP  
Parameter  
Test Conditions  
Symbol Min Typ Max Unit  
Forward transadmittance  
Gate 1 input capacitance  
Feedback capacitance  
Output capacitance  
y
20  
24  
1.7 2.1  
20  
0.9  
26  
28  
mS  
pF  
fF  
21s  
C
issg1  
C
C
rss  
pF  
oss  
G = 2 mS, G = 0.5 mS, f = 200 MHz  
S
L
Power gain  
AGC range  
Noise figure  
G
dB  
dB  
dB  
ps  
G = 3,3 mS, G = 1 mS, f = 800 MHz  
16.5 20  
45  
6
S
L
V
V
= 5 V, V  
= 5 V, V  
= 1 to 4 V, f = 800 MHz  
= 3 to 4 V, f = 50 MHz  
DS  
G2S  
G
ps  
10  
1
1.3  
DS  
G2S  
G = 2 mS, G = 0.5 mS, f = 200 MHz  
S
L
F
G = 3,3 mS, G = 1 mS, f = 800 MHz  
S
L
Input level for k = 1 % @ 0 dB AGC  
f = 50 MHz, f = 60 MHz  
90  
w
unw  
Cross modulation  
X
mod  
dB V  
Input level for k = 1 % @ 40 dB AGC  
f = 50 MHz, f = 60 MHz  
100 105  
w
unw  
Caution for Gate 1 switch-off mode:  
No external DC-voltage on Gate 1 in active mode!  
Switch-off at Gate 1 with V  
< 0.7 V is feasible.  
G1S  
Using open collector switching transistor (inside of PLL), insert 10 k collector resistor.  
Dimensions of TSDF52424X/TSDF52424XR in mm  
14280  
Document Number 85077  
Rev. 1, 24-Nov-00  
www.vishay.com  
3 (4)  
TSDF52424X/TSDF52424XR  
Vishay Telefunken  
Ozone Depleting Substances Policy Statement  
It is the policy of Vishay Semiconductor GmbH to  
1. Meet all present and future national and international statutory requirements.  
2. Regularly and continuously improve the performance of our products, processes, distribution and operating  
systems with respect to their impact on the health and safety of our employees and the public, as well as their  
impact on the environment.  
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as  
ozone depleting substances (ODSs).  
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and  
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban  
on these substances.  
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of  
ODSs listed in the following documents.  
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively  
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental  
Protection Agency (EPA) in the USA  
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.  
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting  
substances and do not contain such substances.  
We reserve the right to make changes to improve technical design and may do so without further notice.  
Parameters can vary in different applications. All operating parameters must be validated for each customer application  
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the  
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or  
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.  
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany  
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423  
www.vishay.com  
4 (4)  
Document Number 85077  
Rev. 1, 24-Nov-00  

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