TSDF5242X [ETC]
Consumer IC ; 消费性IC\nTSDF52424X/TSDF52424XR
Vishay Telefunken
Dual - MOSMIC – MOS Monolithic Integrated Circuit
Two AGC Amplifiers for TV–Tuner Prestage with 5 V Supply Voltage
MOSMIC - MOS Monolithic Integrated Circuit
Electrostatic sensitive device.
Observe precautions for handling.
Applications
Low noise gain controlled input stages in UHF-and VHF- tuners with 5 V supply voltage.
Typical Application
Features
Amplifier 1 and 2
Two AGC amplifiers in a single package
2 (TSDF52424X)
5 (TSDF52424XR)
Integrated gate protection diodes
Low noise figure
AGC
RFC
C
+5 V
G2 (common)
High gain, medium forward transadmittance
(24 mS typ.)
D
3
4
AMP1
C
C
RF out
G1
G1
1
6
RF in
Biasing network on chip
Improved cross modulation at gain reduction
High AGC-range with less steep slope
SMD package, reverse pinning possible
RFC
C
+5 V
D
AMP2
RF out
RF in
S (common)
5 (TSDF52424X)
2 (TSDF52424XR)
16761
6
1
5
2
4
6
1
5
2
4
3
3
16762
16763
TSDF52424X Marking: WC2
Plastic case (SOT 363)
TSDF52424XR Marking: W2C
Plastic case (SOT 363)
1 = Gate 1 (amplifier 1), 2 = Gate 2,
3 = Drain (amplifier 1), 4 = Drain (amplifier 2),
5 = Source, 6 = Gate1 (amplifier 2)
1 = Gate 1 (amplifier 1), 2 = Source,
3 = Drain (amplifier 1), 4 = Drain (amplifier 2),
5 = Gate2, 6 = Gate1 (amplifier 2)
T = Telefunken
Y = Year, is variable for digit from 0 to 9 (e.g. 0 = 2000, 1 = 2001)
CW = Calendar Week, is variable for number from 01 to 52
Number of Calendar Week is always indicating place of pin 1
Document Number 85077
Rev. 1, 24-Nov-00
www.vishay.com
1 (4)
TSDF52424X/TSDF52424XR
Vishay Telefunken
All of following data and characteristics are valid for operating either
amplifier 1 (pin 1, 3, 2, 5) or amplifier 2 (pin 6, 4, 2, 5)
Absolute Maximum Ratings
T
amb
= 25 C, unless otherwise specified
Parameter
Drain - source voltage
Test Conditions
Symbol
Value
8
Unit
V
V
DS
Drain current
I
25
10
6
200
150
mA
mA
V
mW
C
D
Gate 1/Gate 2 - source peak current
Gate 1/Gate 2 - source voltage
Total power dissipation
Channel temperature
±I
±V
G1/G2SM
G1/G2SM
T
amb
≤ 60 C
P
tot
T
Ch
Storage temperature range
T
stg
–55 to +150
C
Maximum Thermal Resistance
T
amb
= 25 C, unless otherwise specified
Parameter
Channel ambient
Test Conditions
on glass fibre printed board
(25 x 20 x 1.5) mm plated with 35 m Cu
Symbol
Value
450
Unit
K/W
R
thChA
3
Electrical DC Characteristics
T
amb
= 25 C, unless otherwise specified
Parameter
Test Conditions
Symbol
Min Typ Max Unit
±I
±I
+V
–V
= 10 mA, V
= 10 mA, V
= 5 V, V
= V = 0
±V
7
7
10
10
50
Gate 1 - source
breakdown voltage
G1S
G2S
DS
(BR)G1SS
±V
(BR)G2SS
V
= V = 0
G2S
G1S
DS
= V = 0
+I
–I
Gate 1 - source
leakage current
G1S
G2S
DS
G1SS
G1SS
A
= 5 V, V
= V = 0
100
G1S
G2S
G2S
DS
Gate 2 - source
leakage current
Drain current
Self-biased
operating current
±V
= 5 V, V
= V = 0
±I
20
nA
A
G1S
DS
G2SS
DSS
V
DS
V
DS
= 5 V, V
= 0, V = 4 V
G2S
I
I
50
8
500
G1S
= 5 V, V
= 5 V, V
= nc, V
= 4 V
13
18 mA
V
G1S
G1S
G2S
DSP
Gate 2 - source
cut-off voltage
V
DS
= nc, I = 20 A
V
G2S(OFF)
1.0
D
www.vishay.com
2 (4)
Document Number 85077
Rev. 1, 24-Nov-00
TSDF52424X/TSDF52424XR
Vishay Telefunken
Electrical AC Characteristics
V
DS
= 5 V, V
= 4 V, I = I
, f = 1 MHz , T = 25 C, unless otherwise specified
amb
G2S
D
DSP
Parameter
Test Conditions
Symbol Min Typ Max Unit
Forward transadmittance
Gate 1 input capacitance
Feedback capacitance
Output capacitance
y
20
24
1.7 2.1
20
0.9
26
28
mS
pF
fF
21s
C
issg1
C
C
rss
pF
oss
G = 2 mS, G = 0.5 mS, f = 200 MHz
S
L
Power gain
AGC range
Noise figure
G
dB
dB
dB
ps
G = 3,3 mS, G = 1 mS, f = 800 MHz
16.5 20
45
6
S
L
V
V
= 5 V, V
= 5 V, V
= 1 to 4 V, f = 800 MHz
= 3 to 4 V, f = 50 MHz
DS
G2S
G
ps
10
1
1.3
DS
G2S
G = 2 mS, G = 0.5 mS, f = 200 MHz
S
L
F
G = 3,3 mS, G = 1 mS, f = 800 MHz
S
L
Input level for k = 1 % @ 0 dB AGC
f = 50 MHz, f = 60 MHz
90
w
unw
Cross modulation
X
mod
dB V
Input level for k = 1 % @ 40 dB AGC
f = 50 MHz, f = 60 MHz
100 105
w
unw
Caution for Gate 1 switch-off mode:
No external DC-voltage on Gate 1 in active mode!
Switch-off at Gate 1 with V
< 0.7 V is feasible.
G1S
Using open collector switching transistor (inside of PLL), insert 10 k collector resistor.
Dimensions of TSDF52424X/TSDF52424XR in mm
14280
Document Number 85077
Rev. 1, 24-Nov-00
www.vishay.com
3 (4)
TSDF52424X/TSDF52424XR
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
www.vishay.com
4 (4)
Document Number 85077
Rev. 1, 24-Nov-00
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