UNR5113(UN5113) [ETC]
Composite Device - Transistors with built-in Resistor ; 复合器件 - 晶体管具有内置电阻\n
| 型号： | UNR5113(UN5113) |
| 厂家： | 
ETC |
| 描述： | Composite Device - Transistors with built-in Resistor
|
| 文件： | 总18页 (文件大小：632K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Transistors with built-in Resistor
UNR5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/
511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z
(UN5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/511D/511E/511F/
511H/511L/511M/511N/511T/511V/511Z)
Silicon PNP epitaxial planer transistor
For digital circuits
Unit: mm
+±.1±
–±.±5
+±.1
–±.±
±.15
±.3
3
Features
I
G
1
2
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
(±.65) (±.65)
G
S-Mini type package, allowing automatic insertion through tape
packing and magazine packing.
1.3±±.1
2.±±±.2
1±°
Resistance by Part Number
I
Marking Symbol (R1)
(R2)
10kΩ
22kΩ
47kΩ
47kΩ
—
—
—
5.1kΩ
10kΩ
—
10kΩ
22kΩ
10kΩ
10kΩ
4.7kΩ
47kΩ
47kΩ
47kΩ
2.2kΩ
22kΩ
G
G
G
G
G
G
G
G
G
G
G
G
G
G
G
G
G
G
G
G
UNR5111
UNR5112
UNR5113
UNR5114
UNR5115
UNR5116
UNR5117
UNR5118
UNR5119
UNR5110
UNR511D
UNR511E
UNR511F
UNR511H
UNR511L
UNR511M
UNR511N
UNR511T
UNR511V
UNR511Z
6A
6B
6C
6D
6E
6F
10kΩ
22kΩ
47kΩ
10kΩ
10kΩ
4.7kΩ
22kΩ
0.51Ω
1kΩ
47kΩ
47kΩ
47kΩ
4.7kΩ
2.2kΩ
4.7kΩ
2.2kΩ
4.7kΩ
22kΩ
2.2kΩ
4.7kΩ
1 : Base
2 : Emitter
3 : Collector
EIAJ : SC–70
SMini3-G1 Package
6H
6I
Internal Connection
6K
6L
6M
6N
6O
6P
6Q
EI
EW
EY
FC
FE
C
E
R1
B
R2
Absolute Maximum Ratings (Ta=25˚C)
I
Parameter
Symbol
VCBO
VCEO
IC
Ratings
–50
Unit
V
Collector to base voltage
Collector to emitter voltage
Collector current
–50
V
–100
mA
mW
˚C
Total power dissipation
Junction temperature
Storage temperature
PT
150
Tj
150
Tstg
–55 to +150
˚C
Note) The Part numbers in the Parenthesis show conventional part number.
1
UNR5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/
Transistors with built-in Resistor 511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z
Electrical Characteristics (Ta=25˚C)
I
Parameter
Symbol
ICBO
Conditions
VCB = –50V, IE = 0
VCE = –50V, IB = 0
min
typ
max
– 0.1
– 0.5
– 0.5
– 0.2
– 0.1
– 0.01
–1.0
Unit
µA
Collector cutoff current
UNR5111
ICEO
µA
UNR5112/5114/511E/511D/511M/511N/511T
UNR5113
Emitter
cutoff
current
UNR5115/5116/5117/5110
UNR511F/511H
UNR5119
IEBO
VEB = –6V, IC = 0
mA
–1.5
UNR5118/511L/511V
UNR511Z
–2.0
– 0.4
Collector to base voltage
UNR511N/511T/511V/511Z
–50
–50
–50
–50
35
VCBO
IC = –10µA, IE = 0
V
V
Collector to emitter voltage
UNR511N/511T
UNR5111
VCEO
IC = –2mA, IB = 0
UNR5112/511E
60
UNR5113/5114/511M
80
Forward
current
transfer
ratio
UNR5115*/5116*/5117*/5110*
160
30
460
UNR511F/511D/5119/511H hFE
UNR5118/511L
UNR511N/511T
UNR511V
VCE = –10V, IC = –5mA
20
80
400
20
6
UNR511Z
0
200
Collector to emitter saturation voltage
UNR511V
IC = –10mA, IB = – 0.3mA
– 0.25
– 0.25
VCE(sat)
VOH
V
V
IC = –10mA, IB = –1.5mA
Output voltage high level
Output voltage low level
UNR5113
VCC = –5V, VB = – 0.5V, RL = 1kΩ
VCC = –5V, VB = –2.5V, RL = 1kΩ
VCC = –5V, VB = –3.5V, RL = 1kΩ
VCC = –5V, VB = –10V, RL = 1kΩ
VCC = –5V, VB = –6V, RL = 1kΩ
VCB = –10V, IE = 1mA, f = 200MHz
VCB = –10V, IE = 1mA, f = 200MHz
–4.9
– 0.2
– 0.2
– 0.2
– 0.2
VOL
V
UNR511D
UNR511E
Transition frequency
UNR511Z
80
150
10
fT
MHz
UNR5111/5114/5115
UNR5112/5117/511T
22
UNR5113/5110/511D/511E
Input
resis-
tance
47
UNR5116/511F/511L/511N/511Z R1
UNR5118
(–30%)
4.7
0.51
1
(+30%)
kΩ
UNR5119
UNR511H/511M/511V
2.2
* hFE rank classification (UNR5115/5116/5117/5110)
Rank
hFE
Q
R
S
160 to 260
210 to 340
290 to 460
2
UNR5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/
Transistors with built-in Resistor 511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z
Electrical Characteristics (continued) (Ta=25˚C)
I
Parameter
UNR5111/5112/5113/511L
UNR5114
Symbol
Conditions
min
0.8
typ
1.0
max
1.2
Unit
0.17
0.08
0.21
0.1
0.25
0.12
UNR5118/5119
UNR511D
4.7
UNR511E
2.14
0.47
0.22
0.047
0.1
Resis-
tance
ratio
UNR511F/511T
UNR511H
R1/R2
0.17
0.27
UNR511M
UNR511N
UNR511V
1.0
UNR511Z
0.21
3
UNR5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/
Transistors with built-in Resistor 511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z
Common characteristics chart
PT — Ta
240
200
160
120
80
40
0
0
40
80
120
160
)
(
Ambient temperature Ta ˚C
Characteristics charts of UNR5111
IC — VCE
VCE(sat) — IC
hFE — IC
–160
–140
–120
–100
–80
–60
–40
–20
0
160
120
80
–100
IC/IB=10
VCE=–10V
Ta=75˚C
25˚C
Ta=25˚C
–0.9mA
IB=–1.0mA
–30
–10
–0.8mA
–0.7mA
–0.6mA
–0.5mA
–25˚C
–3
–1
–0.4mA
–0.3mA
Ta=75˚C
–0.3
–0.1
25˚C
40
–0.2mA
–25˚C
–0.03
–0.01
–0.1mA
0
–1
0
–2
–4
–6
–8
–10 –12
–3
–10 –30 –100 –300 –1000
–0.1 –0.3
–1
–3
–10 –30 –100
(
)
(
)
Collector to emitter voltage VCE
V
(
)
Collector current IC mA
Collector current IC mA
Cob — VCB
IO — VIN
VIN — IO
6
5
4
3
2
1
0
–10000
–100
VO=–5V
Ta=25˚C
VO=–0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
–3000
–1000
–30
–10
–300
–100
–3
–1
–30
–10
–0.3
–0.1
–
3
–0.03
–0.01
–1
–0.4
–0.1 –0.3
–1
–3
–10 –30 –100
–0.6
–0.8
–1.0
–1.2
–1.4
–0.1 –0.3
–1
–3
–10 –30 –100
(
)
(
)
(
)
Collector to base voltage VCB
V
Input voltage VIN
V
Output current IO mA
4
UNR5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/
Transistors with built-in Resistor 511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z
Characteristics charts of UNR5112
IC — VCE
VCE(sat) — IC
hFE — IC
400
300
200
100
0
–160
–140
–120
–100
–80
–60
–40
–20
0
–100
IC/IB=10
VCE=–10V
Ta=25˚C
IB=–1.0mA
–30
–10
–0.9mA
–0.8mA
–0.7mA
–0.6mA
–3
–1
–0.5mA
–0.4mA
Ta=75˚C
25˚C
–0.3mA
–0.2mA
–0.3
–0.1
–25˚C
Ta=75˚C
25˚C
–25˚C
–0.1mA
–0.03
–0.01
–1
–3
–10 –30 –100 –300 –1000
0
–2
–4
–6
–8
–10 –12
–0.1 –0.3
–1
–3
–10 –30 –100
(
)
(
)
(
)
Collector current IC mA
Collector current IC mA
Collector to emitter voltage VCE
V
Cob — VCB
IO — VIN
VIN — IO
–100
6
5
4
3
2
1
0
–10000
VO=–0.2V
Ta=25˚C
VO=–5V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
–30
–10
–3000
–1000
–3
–1
–300
–100
–0.3
–0.1
–30
–10
–3
–1
–0.03
–0.01
–0.1 –0.3
–10 –30 –100
–0.1 –0.3
–1
–3
–10 –30 –100
–0.4
–0.6
–0.8
–1.0
–1.2
–1.4
–1
–3
(
)
( )
Input voltage VIN V
(
)
Output current IO mA
Collector to base voltage VCB
V
Characteristics charts of UNR5113
IC — VCE
VCE(sat) — IC
hFE — IC
400
300
200
100
0
–100
–160
–140
–120
–100
–80
–60
–40
–20
0
IC/IB=10
IB=–1.0mA
VCE=–10V
Ta=75˚C
25˚C
Ta=25˚C
–30
–0.9mA
–0.8mA
–0.7mA
–0.6mA
–10
–0.5mA
–3
–1
–0.4mA
–0.3mA
–25˚C
–0.3
–0.1
Ta=75˚C
25˚C
–0.2mA
–0.1mA
–25˚C
–0.03
–0.01
–1
–3
–10 –30 –100 –300 –1000
0
–2
–4
–6
–8
–10 –12
–0.1 –0.3
–1
–3
–10 –30 –100
( )
Collector current IC mA
(
)
( )
Collector current IC mA
Collector to emitter voltage VCE
V
5
UNR5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/
Transistors with built-in Resistor 511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z
Cob — VCB
IO — VIN
VIN — IO
6
5
4
3
2
1
–10000
–100
VO=–5V
Ta=25˚C
VO=–0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
–3000
–1000
–30
–10
–300
–100
–3
–1
–30
–10
–0.3
–0.1
–3
–1
–0.03
–0.01
0
–0.1 –0.3
–1
–3
–10 –30 –100
–0.4
–0.6
–0.8
–1.0
–1.2
–1.4
–0.1 –0.3
–1
–3
–10 –30 –100
(
)
(
)
(
)
Collector to base voltage VCB
V
Input voltage VIN
V
Output current IO mA
Characteristics charts of UNR5114
IC — VCE
VCE(sat) — IC
hFE — IC
–160
–140
–120
–100
–80
–60
–40
–20
0
–100
400
300
200
100
0
IC/IB=10
VCE=–10V
Ta=25˚C
–30
IB=–1.0mA
–0.9mA
–0.8mA
–10
–0.7mA
–0.6mA
–3
–1
Ta=75˚C
–0.5mA
–0.4mA
25˚C
–0.3mA
–0.2mA
–0.3
–0.1
Ta=75˚C
–25˚C
25˚C
–0.1mA
–0.03
–0.01
–25˚C
0
–2
–4
–6
–8
–10 –12
–0.1 –0.3
–1
–3
–10 –30 –100
–1
–3
–10 –30 –100 –300 –1000
(
)
(
)
(
)
Collector to emitter voltage VCE
V
Collector current IC mA
Collector current IC mA
Cob — VCB
IO — VIN
VIN — IO
6
5
4
3
2
1
0
–1000
–10000
VO=–5V
Ta=25˚C
VO=–0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
–3000
–1000
–300
–100
–300
–100
–30
–10
–30
–10
–3
–1
–3
–1
–0.3
–0.1
–0.1 –0.3
–1
–3
–10 –30 –100
–0.1 –0.3
–1
–3
–10 –30 –100
–0.4
–0.6
–0.8
–1.0
–1.2
–1.4
(
)
(
)
(
)
V
Collector to base voltage VCB
V
Output current IO mA
Input voltage VIN
6
UNR5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/
Transistors with built-in Resistor 511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z
Characteristics charts of UNR5115
IC — VCE
VCE(sat) — IC
hFE — IC
–100
–160
–140
–120
–100
–80
–60
–40
–20
0
400
300
200
100
0
IC/IB=10
Ta=25˚C
VCE=–10V
IB=–1.0mA
–30
–10
–0.9mA
–0.8mA
–0.7mA
–0.6mA
Ta=75˚C
–3
–1
–0.5mA
–0.4mA
25˚C
–0.3mA
–0.2mA
Ta=75˚C
–0.3
–0.1
–25˚C
25˚C
–0.1mA
–0.03
–0.01
–25˚C
–0.1 –0.3
–1
–3
–10 –30 –100
0
–2
–4
–6
–8
–10 –12
–1
–3
–10 –30 –100 –300 –1000
(
)
(
)
V
Collector current IC mA
(
)
Collector to emitter voltage VCE
Collector current IC mA
Cob — VCB
IO — VIN
VIN — IO
6
–10000
–100
VO=–5V
Ta=25˚C
VO=–0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
–3000
–1000
–30
–10
5
4
3
2
1
0
–300
–100
–3
–1
–30
–10
–0.3
–0.1
–3
–1
–0.03
–0.01
–0.1 –0.3
–1
–3
–10 –30 –100
–0.4
–0.6
–0.8
–1.0
–1.2
–1.4
–0.1 –0.3
–1
–3
–10 –30 –100
(
)
(
)
Collector to base voltage VCB
V
Input voltage VIN
V
(
)
Output current IO mA
Characteristics charts of UNR5116
IC — VCE
VCE(sat) — IC
hFE — IC
–160
–140
–120
–100
–80
–60
–40
–20
0
–100
400
300
200
100
0
IC/IB=10
Ta=25˚C
VCE=–10V
IB=–1.0mA
–30
–0.9mA
–0.8mA
–10
–0.7mA
Ta=75˚C
–0.6mA
–0.5mA
–0.4mA
–3
–1
25˚C
–0.3mA
–0.2mA
–0.3
–0.1
Ta=75˚C
–25˚C
25˚C
–0.03
–0.01
–0.1mA
–25˚C
0
–2
–4
–6
–8
–10 –12
–0.1 –0.3
–1
–3
–10 –30 –100
–1
–3
–10 –30 –100 –300 –1000
(
)
(
)
(
)
Collector to emitter voltage VCE
V
Collector current IC mA
Collector current IC mA
7
UNR5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/
Transistors with built-in Resistor 511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z
Cob — VCB
IO — VIN
VIN — IO
6
5
4
3
2
1
–10000
–100
VO=–5V
Ta=25˚C
VO=–0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
–3000
–1000
–30
–10
–300
–100
–3
–1
–30
–10
–0.3
–0.1
–3
–1
–0.03
–0.01
0
–0.1 –0.3
–1
–3
–10 –30 –100
–0.4
–0.6
–0.8
–1.0
–1.2
–1.4
–0.1 –0.3
–1
–3
–10 –30 –100
(
)
V
(
)
(
)
Collector to base voltage VCB
Input voltage VIN
V
Output current IO mA
Characteristics charts of UNR5117
IC — VCE
VCE(sat) — IC
hFE — IC
–120
–100
–80
–60
–40
–20
0
–100
400
300
200
100
0
IC/IB=10
Ta=25˚C
VCE=–10V
–30
IB=–1.0mA
–0.9mA
–0.8mA
–0.7mA
–0.6mA
–0.5mA
–0.4mA
–10
–3
–1
Ta=75˚C
Ta=75˚C
–0.3
–0.1
–0.3mA
–0.2mA
25˚C
25˚C
–25˚C
–25˚C
–0.1mA
–0.03
–0.01
0
–2
–4
–6
–8
–10 –12
–0.1 –0.3
–1
–3
–10 –30 –100
–1
–3
–10 –30 –100 –300 –1000
(
)
(
)
(
)
Collector to emitter voltage VCE
V
Collector current IC mA
Collector current IC mA
Cob — VCB
IO — VIN
VIN — IO
–10000
6
5
4
3
2
1
0
–100
VO=–5V
Ta=25˚C
VO=–0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
–3000
–1000
–30
–10
–300
–100
–3
–1
–30
–10
–0.3
–0.1
–3
–1
–0.03
–0.01
–0.4
–0.6
–0.8
–1.0
–1.2
–1.4
–0.1 –0.3
–1
–3
–10 –30 –100
–0.1 –0.3
–1
–3
–10 –30 –100
(
)
V
Input voltage VIN
(
)
(
)
Collector to base voltage VCB
V
Output current IO mA
8
UNR5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/
Transistors with built-in Resistor 511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z
Characteristics charts of UNR5118
IC — VCE
VCE(sat) — IC
hFE — IC
160
120
80
–240
–200
–160
–120
–80
–40
0
–100
IC/IB=10
Ta=25˚C
VCE=–10V
–30
–10
IB=–1.0mA
–0.9mA
–0.8mA
–0.7mA
–3
–1
Ta=75˚C
25˚C
Ta=75˚C
–0.6mA
–0.5mA
–0.3
–0.1
–25˚C
25˚C
–0.4mA
–0.3mA
–0.2mA
40
–0.03
–0.01
–25˚C
–0.1mA
0
–1
–3
–10 –30 –100 –300 –1000
0
–2
–4
–6
–8
–10 –12
–0.1 –0.3
–1
–3
–10 –30 –100
(
)
(
)
(
)
Collector current IC mA
Collector to emitter voltage VCE
V
Collector current IC mA
Cob — VCB
IO — VIN
VIN — IO
6
5
4
3
2
1
0
–10000
–100
VO=–5V
Ta=25˚C
VO=–0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
–3000
–1000
–30
–10
–300
–100
–3
–1
–30
–10
–0.3
–0.1
–3
–1
–0.03
–0.01
–0.1 –0.3
–1
–3
–10 –30 –100
–0.4
–0.6
–0.8
–1.0
–1.2
–1.4
–0.1 –0.3
–1
–3
–10 –30 –100
(
)
Collector to base voltage VCB
V
( )
Input voltage VIN V
(
)
Output current IO mA
Characteristics charts of UNR5119
IC — VCE
VCE(sat) — IC
hFE — IC
–240
–200
–160
–120
–80
–40
0
–100
160
120
80
IC/IB=10
Ta=25˚C
VCE=–10V
–30
–10
IB=–1.0mA
–0.9mA
–0.8mA
–0.7mA
Ta=75˚C
–3
–1
Ta=75˚C
25˚C
–25˚C
–0.3
–0.1
–0.6mA
–0.5mA
25˚C
40
–0.4mA
–0.3mA
–0.2mA
–0.1mA
–0.03
–0.01
–25˚C
0
–1
0
–2
–4
–6
–8
–10 –12
–0.1 –0.3
–1
–3
–10 –30 –100
–3
–10 –30 –100 –300 –1000
(
)
(
)
(
)
Collector to emitter voltage VCE
V
Collector current IC mA
Collector current IC mA
9
UNR5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/
Transistors with built-in Resistor 511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z
Cob — VCB
IO — VIN
VIN — IO
–10000
–100
6
5
4
3
2
1
VO=–5V
Ta=25˚C
VO=–0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
–3000
–1000
–30
–10
–300
–100
–3
–1
–30
–10
–0.3
–0.1
–3
–1
–0.03
–0.01
0
–0.4
–0.6
–0.8
–1.0
–1.2
–1.4
–0.1 –0.3
–1
–3
–10 –30 –100
–0.1 –0.3
–1
–3
–10 –30 –100
(
)
(
)
(
)
V
Input voltage VIN
V
Output current IO mA
Collector to base voltage VCB
Characteristics charts of UNR5110
IC — VCE
VCE(sat) — IC
hFE — IC
–120
–100
–80
–60
–40
–20
0
–100
400
300
200
100
0
IC/IB=10
Ta=25˚C
VCE=–10V
IB=–1.0mA
–0.9mA
–30
–0.8mA
–0.7mA
–0.6mA
–0.5mA
–0.4mA
–10
Ta=75˚C
–3
–1
–0.3mA
25˚C
Ta=75˚C
–0.2mA
–0.1mA
–25˚C
–0.3
–0.1
25˚C
–25˚C
–0.03
–0.01
0
–2
–4
–6
–8
–10 –12
–0.1 –0.3
–1
–3
–10 –30 –100
–1
–3
–10 –30 –100 –300 –1000
(
)
(
)
(
)
Collector to emitter voltage VCE
V
Collector current IC mA
Collector current IC mA
Cob — VCB
IO — VIN
VIN — IO
–10000
–100
6
5
4
3
2
1
0
VO=–5V
Ta=25˚C
VO=–0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
–3000
–1000
–30
–10
–300
–100
–3
–1
–30
–10
–0.3
–0.1
–3
–1
–0.03
–0.01
–0.4
–0.6
–0.8
–1.0
–1.2
–1.4
–0.1 –0.3
–1
–3
–10 –30 –100
–0.1 –0.3
–1
–3
–10 –30 –100
(
)
( )
Output current IO mA
(
)
V
Input voltage VIN
V
Collector to base voltage VCB
10
UNR5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/
Transistors with built-in Resistor 511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z
Characteristics charts of UNR511D
IC — VCE
VCE(sat) — IC
hFE — IC
–60
–50
–40
–30
–20
–10
0
–100
160
120
80
IC/IB=10
IB=–1.0mA
–0.9mA
–0.8mA
Ta=25˚C
VCE=–10V
Ta=75˚C
–30
–10
–3
–1
25˚C
–0.3mA
–0.2mA
–25˚C
–0.7mA
–0.6mA
–0.5mA
–0.4mA
Ta=75˚C
–0.3
–0.1
25˚C
40
–0.1mA
–0.03
–0.01
–25˚C
0
–1
0
–2
–4
–6
–8
–10 –12
–0.1 –0.3
–1
–3
–10 –30 –100
–3
–10 –30 –100 –300 –1000
(
)
(
)
(
)
Collector to emitter voltage VCE
V
Collector current IC mA
Collector current IC mA
Cob — VCB
IO — VIN
VIN — IO
6
5
4
3
2
1
0
–10000
–100
VO=–5V
Ta=25˚C
VO=–0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
–3000
–1000
–30
–10
–300
–100
–3
–1
–30
–10
–0.3
–0.1
–3
–1
–0.03
–0.01
–0.1 –0.3
–1
–3
–10 –30 –100
–1.5
–2.0
–2.5
–3.0
–3.5
–4.0
–0.1 –0.3
–1
–3
–10 –30 –100
(
)
(
)
(
)
Collector to base voltage VCB
V
Input voltage VIN
V
Output current IO mA
Characteristics charts of UNR511E
IC — VCE
VCE(sat) — IC
hFE — IC
–100
–60
–50
–40
–30
–20
–10
0
400
300
200
100
0
IC/IB=10
IB=–1.0mA
–0.9mA
Ta=25˚C
VCE=–10V
–0.8mA –0.7mA
–30
–10
–3
–1
–0.3mA
–0.2mA
Ta=75˚C
–0.6mA
–0.5mA
–0.4mA
Ta=75˚C
–0.3
–0.1
25˚C
–0.1mA
25˚C
–25˚C
–25˚C
–0.03
–0.01
–0.1 –0.3
–1
–3
–10 –30 –100
–1
–3
–10 –30 –100 –300 –1000
0
–2
–4
–6
–8
–10 –12
( )
Collector current IC mA
(
)
(
)
V
Collector current IC mA
Collector to emitter voltage VCE
11
UNR5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/
Transistors with built-in Resistor 511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z
Cob — VCB
IO — VIN
VIN — IO
–10000
–100
6
5
4
3
2
1
VO=–5V
Ta=25˚C
VO=–0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
–3000
–1000
–30
–10
–300
–100
–3
–1
–30
–10
–0.3
–0.1
–3
–1
–0.03
–0.01
0
–1.5
–2.0
–2.5
–3.0
–3.5
–4.0
–0.1 –0.3
–1
–3
–10 –30 –100
–0.1 –0.3
–1
–3
–10 –30 –100
(
)
V
(
)
Input voltage VIN
(
)
V
Output current IO mA
Collector to base voltage VCB
Characteristics charts of UNR511F
IC — VCE
VCE(sat) — IC
hFE — IC
–240
–200
–160
–120
–80
–40
0
–100
160
120
80
IC/IB=10
Ta=25˚C
VCE=–10V
Ta=75˚C
–30
IB=–1.0mA
–0.9mA
–0.8mA
–0.7mA
–0.6mA
–10
–3
–1
25˚C
–25˚C
Ta=75˚C
–0.5mA
–0.3
–0.1
25˚C
–0.4mA
–0.3mA
–0.2mA
40
–0.03
–0.01
–25˚C
–0.1mA
0
–1
0
–2
–4
–6
–8
–10 –12
–0.1 –0.3
–1
–3
–10 –30 –100
–3
–10 –30 –100 –300 –1000
(
)
V
(
)
(
)
Collector to emitter voltage VCE
Collector current IC mA
Collector current IC mA
Cob — VCB
IO — VIN
VIN — IO
–100
6
5
4
3
2
1
0
–10000
VO=–0.2V
Ta=25˚C
VO=–5V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
–30
–10
–3000
–1000
–3
–1
–300
–100
–0.3
–0.1
–30
–10
–0.03
–0.01
–3
–1
–0.1 –0.3
–1
–3
–10 –30 –100
–0.1 –0.3
–1
–3
–10 –30 –100
–0.4
–0.6
–0.8
–1.0
–1.2
–1.4
( )
Output current IO mA
(
)
( )
V
Collector to base voltage VCB
V
Input voltage VIN
12
UNR5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/
Transistors with built-in Resistor 511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z
Characteristics charts of UNR511H
IC — VCE
VCE(sat) — IC
hFE — IC
–120
–100
–80
–60
–40
–20
0
–100
–10
240
200
160
120
80
IC/IB=10
Ta=25˚C
VCE=–10V
IB=–0.5mA
–0.4mA
Ta=75˚C
25˚C
–1
Ta=75˚C
25˚C
–0.3mA
–25˚C
–0.2mA
–0.1
40
–25˚C
–0.1mA
–0.01
0
0
–2
–4
–6
–8
–10 –12
–1
–3
–10 –30 –100 –300 –1000
–0.1 –0.3
–1
–3
–10 –30 –100
(
)
Collector to emitter voltage VCE
V
(
)
Collector current IC mA
(
)
Collector current IC mA
Cob — VCB
VIN — IO
6
5
4
3
2
1
0
–100
–10
VO=–0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
–1
–0.1
–0.01
–0.1 –0.3
–1
–3
–10
–30
–100
–1
–3
–10 –30 –100
(
)
(
)
Collector to base voltage VCB
V
Output current IO mA
Characteristics charts of UNR511L
IC — VCE
VCE(sat) — IC
hFE — IC
–100
–240
–200
–160
–120
–80
–40
0
240
200
160
120
80
IC/IB=10
VCE=–10V
Ta=25˚C
–30
–10
–3
–1
IB=–1.0mA
–0.8mA
Ta=75˚C
Ta=75˚C
25˚C
–0.3
–0.1
–0.6mA
25˚C
–25˚C
–0.4mA
–0.2mA
–25˚C
40
–0.03
–0.01
0
–1
–1
–3
–10 –30 –100 –300 –1000
0
–2
–4
–6
–8
–10 –12
–3
–10 –30 –100 –300 –1000
(
)
(
)
Collector current IC mA
(
)
Collector to emitter voltage VCE
V
Collector current IC mA
13
UNR5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/
Transistors with built-in Resistor 511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z
Cob — VCB
VIN — IO
6
5
4
3
2
1
0
–100
–10
VO=–0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
–1
–0.1
–0.01
–0.1 –0.3
–1
–3
–10
–30
–100
–1
–3
–10 –30 –100
(
)
(
)
Collector to base voltage VCB
V
Output current IO mA
Characteristics charts of UNR511M
IC — VCE
VCE(sat) — IC
hFE — IC
–10
500
400
300
200
100
0
240
200
160
120
80
IC/IB=10
Ta=25˚C
VCE=–10V
–3
–1
IB=–1.0mA
–0.9mA
–0.8mA
–0.7mA
–0.6mA
–0.3
–0.1
Ta=75˚C
25˚C
Ta=75˚C
25˚C
–0.03
–0.01
–25˚C
–0.5mA
–0.4mA
–0.3mA
–25˚C
40
–0.2mA
–0.1mA
–0.003
–0.001
0
–1
–3
–10 –30 –100 –300 –1000
–1
–3
–10 –30 –100 –300 –1000
0
–2
–4
–6
–8
–10 –12
(
)
(
)
(
)
V
Collector current IC mA
Collector current IC mA
Collector to emitter voltage VCE
Cob — VCB
IO — VIN
VIN — IO
10–4
10–3
10–2
10–1
1
–100
10
8
VO=–0.2V
Ta=25˚C
VO=–5V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
–30
–10
–3
–1
6
4
–0.3
–0.1
2
–0.03
–0.01
0
–0.1 –0.3
–1
–3
–10 –30 –100
–0.4
–0.6
–0.8
–1.0
–1.2
–1.4
–0.1 –0.3
–1
–3
–10 –30 –100
(
)
Output current IO mA
( )
V
(
)
V
Input voltage VIN
Collector to base voltage VCB
14
UNR5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/
Transistors with built-in Resistor 511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z
Characteristics charts of UNR511N
IC — VCE
VCE(sat) — IC
hFE — IC
Ta=75˚C
–25˚C
300
250
200
150
100
50
–10
–1
–200
–175
–150
–125
–100
–75
IC/IB=10
VCE=–10V
Ta=25˚C
IB=–1.0mA
–0.9mA
–0.8mA
–0.7mA
25˚C
–0.6mA
–0.5mA
Ta=75˚C
25˚C
–0.4mA
–0.3mA
–0.2mA
–0.1
–50
–25
0
–25˚C
–0.1mA
0
–1
–0.01
–10
–100
–1000
0
–2
–4
–6
–8
–10 –12
–1
–10
–100
–1000
(
)
(
)
(
)
Collector current IC mA
Collector to emitter voltage VCE
V
Collector current IC mA
Cob — VCB
IO — VIN
VIN — IO
6
5
4
3
2
1
0
–10000
–1000
–100
–10
–100
–10
VO=–5V
Ta=25˚C
VO=–0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
–1
–0.1
–1
–0.4
–0.01
–0.1
–1
–10
–100
–0.6
–0.8
–1.0
–1.2
–1.4
–1
–10
–100
(
)
(
)
(
)
Collector to base voltage VCB
V
Input voltage VIN
V
Output current IO mA
Characteristics charts of UNR511T
IC — VCE
VCE(sat) — IC
hFE — IC
–200
–175
–150
–125
–100
–75
–10
300
250
200
150
100
50
IC/IB=10
VCE=–10V
Ta=25˚C
Ta=75˚C
IB=–1.0mA
–1
–0.9mA
–0.8mA
–0.7mA
–0.6mA
25˚C
Ta=75˚C
25˚C
–25˚C
–0.5mA
–0.4mA
–0.1
–50
–25
0
–0.3mA
–0.2mA
–25˚C
–0.1mA
0
–1
–0.01
–10
–100
–1000
0
–2
–4
–6
–8
–10 –12
–1
–10
–100
–1000
(
)
(
)
(
)
Collector current IC mA
Collector to emitter voltage VCE
V
Collector current IC mA
15
UNR5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/
Transistors with built-in Resistor 511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z
IO — VIN
VIN — IO
–10000
–1000
–100
–10
–100
–10
VO=–5V
Ta=25˚C
VO=–0.2V
Ta=25˚C
–1
–0.1
–1
–0.4
–0.01
–0.1
–0.6
–0.8
–1
–1.2
–1.4
–1
–10
–100
(
)
V
(
)
Input voltage VIN
Output current IO mA
Characteristics charts of UNR511V
IC — VCE
VCE(sat) — IC
hFE — IC
–10
12
10
8
–12
–10
–8
–6
–4
–2
0
IC/IB=10
VCE=–10V
Ta=25˚C
IB=–1.0mA
–0.9mA
Ta=75˚C
25˚C
–0.8mA
–1
–0.7mA
–0.6mA
–0.5mA
Ta=75˚C
–25˚C
6
25˚C
–0.1
4
–0.4mA
–0.3mA
–25˚C
2
–0.2mA
–0.1mA
0
–1
–0.01
–10
–100
–1
–10
–100
–1000
0
–2
–4
–6
–8
–10 –12
( )
Collector current IC mA
(
)
(
)
V
Collector current IC mA
Collector to emitter voltage VCE
IO — VIN
VIN — IO
–10000
–1000
–100
–10
–100
–10
VO=–5V
Ta=25˚C
VO=–0.2V
Ta=25˚C
–1
–0.1
–1
–0.4
–0.01
–0.1
–0.6
–0.8
–1
–1.2
–1.4
–1
–10
–100
(
)
(
)
Input voltage VIN
V
Output current IO mA
16
UNR5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/
Transistors with built-in Resistor 511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z
Characteristics charts of UNR511Z
IC — VCE
VCE(sat) — IC
hFE — IC
300
250
200
150
100
50
–10
–1
–200
–175
–150
–125
–100
–75
IC/IB=10
VCE=–10V
Ta=25˚C
IB=–1.0mA
Ta=75˚C
–25˚C
–0.9mA
–0.8mA
–0.7mA
–0.6mA
–0.5mA
25˚C
Ta=75˚C
–25˚C
–0.1
25˚C
–0.4mA
–0.3mA
–50
–25
0
–0.2mA
–0.1mA
0
–1
–0.01
–10
–100
–1000
0
–2
–4
–6
–8
–10 –12
–1
–10
–100
–1000
(
)
(
)
(
)
Collector current IC mA
Collector current IC mA
Collector to emitter voltage VCE
V
Cob — VCB
IO — VIN
VIN — IO
6
5
4
3
2
1
0
–10000
–1000
–100
–10
–100
–10
VO=–5V
Ta=25˚C
VO=–0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
–1
–0.1
–1
–0.4
–0.01
–0.1
–1
–10
–100
–0.6
–0.8
–1
–1.2
–1.4
–1
–10
–100
(
)
(
)
(
)
Collector to base voltage VCB
V
Input voltage VIN
V
Output current IO mA
17
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2001 MAR
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