UT62L2568 [ETC]
ASYNCHRONOUS STATIC RAM- High Speed ; 异步静态RAM-高速\n
| 型号： | UT62L2568 |
| 厂家： | 
ETC |
| 描述： | ASYNCHRONOUS STATIC RAM- High Speed
|
| 文件： | 总14页 (文件大小：139K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UTRON
UT62L2568
256K X 8 BIT LOW POWER CMOS SRAM
Rev. 1.1
REVISION HISTORY
REVISION
Preliminary Rev. 0.1
DESCRIPTION
Release Date
Jun 18, 2001
Jul 30, 2002
Original.
Rev. 1.0
1.
2.
Revised Power supply
a、 55ns (max.) for Vcc=2.7V~3.6V
b、 70/100ns (max.) for Vcc=2.5V~3.6V
Revised DC ELECTRICAL CHARACTERISTICS：
a、 Revised VIH as 2.2V
b、 Revised standby current ISB1 of LL-version
Typical : 3uAB2uA
Maximum : 25uAB20uA
3.
4.
Revised AC ELECTRICAL CHARACTERISTICS：
a、 Revised tOH as 10ns (min.)
Revised 36-pin TFBGA package outline dimension：
a、 Rev. 0.1 ball diameter=0.3mm
、
b
Rev. 1.0 ball diameter=0.35mm
Rev. 1.1
1.Revised “FEATURES” Operating current :
40/35/25mA(ICC max)ꢀ20/18/15mA (ICC typ.)
2.TRUTH TABLE & DC ELECTRICAL : Delete ISB2
3.Revised VTERM : -0.5 to Vcc+0.3V ꢀ-0.5 to 4.6V
4.Added VOH : 2.7V at Vcc=3.0V
Apr 28, 2003
5.Revised DC (ICC max) 45/35/25mAꢀ35/30/25mA
(ICC typ.) 30/25/20mAꢀ20/18/15mA
6.Add under/overshoot range of VIL & VIH
7.Revised AC tOHZ*@100ns (max): 35nsꢀ30ns
tWHZ*(max) :30/30/40ꢀ20/25/30ns
8.Revised “Data retention Characteristics” :
IDR-LL (Typ.) : NAꢀ1uA, IDR-L (Typ.) : NAꢀ10uA
IDR-LL (Max.) : 25uAꢀ6uA
tR(min) : 5nsꢀ”tRC”
9.Add order information for lead free product
UTRON TECHNOLOGY INC.
P80059
1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.
TEL: 886-3-5777882 FAX: 886-3-5777919
1
UTRON
UT62L2568
256K X 8 BIT LOW POWER CMOS SRAM
Rev. 1.1
FEATURES
GENERAL DESCRIPTION
The UT62L2568 is a 2,097,152-bit low power CMOS
static random access memory organized as 262,144
words by 8 bits. It is fabricated using high performance,
high reliability CMOS technology.
ꢁ Fast access time :
55ns(max.) for Vcc=2.7V~3.6V
70/100ns(max.) for Vcc=2.5V~3.6V
ꢁ CMOS low power operation
Operating : 20/18/15mA (TYP.)
Standby : 20 uA(TYP.) L -version
2 uA(TYP.) LL-version
The UT62L2568 is designed for very low power system
applications. It is particularly well suited for battery
back-up nonvolatile memory applications.
ꢁ Single 2.5V~3.6V power supply
ꢁ Operating temperature:
It operates from a wide range of 2.5V~ 3.6V supply
voltage. Easy memory expansion is provided by using
℃ ℃
Commercial : 0 ~70
℃ ℃
Extended : -20 ~80
two chip enable input (
,CE2). And all inputs and
CE
three-state outputs are fully TTL compatible.
ꢁ All TTL compatible inputs and outputs
ꢁ Fully static operation
ꢁ Three state outputs
ꢁ Data retention voltage: 1.5V (min)
Ⅰ
ꢁ Package : 32-pin 8mm x 20mm TSOP-
32-pin 8mm x 13.4mm STSOP
36-pin 6mm × 8mm TFBGA
FUNCTIONAL BLOCK DIAGRAM
×
256K
8
A0-A17
DECODER
MEMORY
ARRAY
Vcc
Vss
I/O DATA
CIRCUIT
COLUMN I/O
I/O1-I/O8
CE
CE2
OE
CONTROL
CIRCUIT
WE
UTRON TECHNOLOGY INC.
P80059
1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.
TEL: 886-3-5777882 FAX: 886-3-5777919
2
UTRON
UT62L2568
256K X 8 BIT LOW POWER CMOS SRAM
Rev. 1.1
PIN CONFIGURATION
A11
A9
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
OE
A10
A8
A13
CE
I/O8
I/O7
I/O6
I/O5
I/O4
Vss
I/O3
I/O2
I/O1
A0
A
B
C
D
E
F
A1
A2
CE2
A0
A3
A4
A5
A6
A7
A8
WE
CE2
A15
Vcc
A17
A16
A14
A12
A7
I/O5
I/O6
Vss
Vcc
I/O7
I/O1
I/O2
Vcc
Vss
WE
NC
UT62L2568
NC A17
I/O3
A6
A5
A4
A1
A2
A3
G
H
I/O8
CE
A16
A15 I/O4
OE
A11
A9 A10
A12 A13 A14
TSOP-1 / STSOP
1
2
3
4
5
6
TFBGA
PIN DESCRIPTION
SYMBOL
DESCRIPTION
A0 - A17
Address Inputs
I/O1 - I/O8
Data Inputs/Outputs
Chip Enable Inputs
Write Enable Input
Output Enable Input
,CE2
CE
WE
OE
VCC
VSS
NC
Power Supply
Ground
No Connection
UTRON TECHNOLOGY INC.
1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.
TEL: 886-3-5777882 FAX: 886-3-5777919
P80059
3
UTRON
UT62L2568
256K X 8 BIT LOW POWER CMOS SRAM
Rev. 1.1
TRUTH TABLE
MODE
I/O OPERATION
SUPPLY CURRENT
CE2
X
L
H
H
WE
X
X
H
H
L
OE
X
X
H
L
CE
H
High - Z
High - Z
High - Z
DOUT
ISB,ISB1
ISB,ISB1
Standby
X
L
L
L
Output Disable
Read
Write
ICC,ICC1, CC2
ICC,ICC1, CC2
ICC,ICC1, CC2
I
I
I
H
X
DIN
Note: H = VIH, L=VIL, X = Don't care.
ABSOLUTE MAXIMUM RATINGS*
PARAMETER
SYMBOL
RATING
UNIT
V
℃
Terminal Voltage with Respect to VSS
Operating Temperature
VTERM
TA
-0.5 to 4.6
0 to 70
-20 to 80
-65 to 150
1
Commercial
Extended
℃
TA
℃
Storage Temperature
Power Dissipation
DC Output Current
TSTG
PD
W
mA
℃
IOUT
50
Soldering Temperature (under 10 secs)
Tsolder
260
*Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress
rating only and functional operation of the device or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect device reliability.
℃
℃
℃
℃
DC ELECTRICAL CHARACTERISTICS (VCC =2.5V~3.6V, T =
)
0
to 70 / -20 to 80 (E)
A
PARAMETER
SYMBOL TEST CONDITION
MIN. TYP. MAX. UNIT
55
2.7 3.0
70/100 2.5 3.0
3.6
3.6
Vcc+0.3
V
V
V
V
Power Voltage
VCC
＊
1
Input High Voltage
2.2
- 0.2
- 1
-
-
-
-
VIH
＊
2
Input Low Voltage
0.6
1
1
VIL
ILI
ILO
VOH
VOL
≦
≦
≦
VIN VCC
Input Leakage Current
Output Leakage Current
Output High Voltage
Output Low Voltage
VSS
VSS
A
µ
≦
VI/O
VCC, Output Disabled
- 1
A
µ
IOH= - 1mA (IOH= -0.5mA when Vcc<2.7V) 2.2 2.7
-
V
V
mA
mA
mA
IOL= 2.1mA
-
-
-
-
-
-
0.4
35
30
25
5
Cycle time=Min.100% duty,
55
70
20
18
15
4
ICC
=VIL and CE2 = VIH,
CE
100
II/O =0mA
Operating Current
TCycle=
0.2V
≦
100%duty, II/O=0mA,
≧
CE
ICC1
mA
mA
1 s
µ
TCycle=
500ns
and CE2 Vcc-0.2V, other pins
-
8
10
at 0.2V or Vcc-0.2V
ICC2
ISB
Standby Current (TTL)
-
-
-
0.3
20
2
0.5
80
20
mA
µA
µA
=VIH or CE2 = VIL
CE
CE
-L
=VCC-0.2V or CE2=0.2V,
Standby Current (CMOS) ISB1
Notes:
-LL
other pins at 0.2V or Vcc-0.2V
1. Overshoot : Vcc+3.0v for pulse width less than 10ns.
2. Undershoot : Vss-3.0v for pulse width less than 10ns.
3. Overshoot and Undershoot are sampled, not 100% tested.
UTRON TECHNOLOGY INC.
P80059
1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.
TEL: 886-3-5777882
FAX: 886-3-5777919
4
UTRON
UT62L2568
256K X 8 BIT LOW POWER CMOS SRAM
Rev. 1.1
℃
(TA=25 , f=1.0MHz)
CAPACITANCE
PARAMETER
Input Capacitance
Input/Output Capacitance
SYMBOL
MIN.
-
-
MAX
6
8
UNIT
pF
pF
CIN
CI/O
Note : These parameters are guaranteed by device characterization, but not production tested.
AC TEST CONDITIONS
Input Pulse Levels
0V to 3V
5ns
1.5V
Input Rise and Fall Times
Input and Output Timing Reference Levels
Output Load
CL = 30pF+1TTL, IOH= -1mA, IOL= 2.1mA
℃
℃ ℃ ℃
to 70 / -20 to 80 (E)
)
AC ELECTRICAL CHARACTERISTICS ( T =
0
A
(1) READ CYCLE
PARAMETER
SYMBOL
UT62L2568-55
UT62L2568-70
UT62L2568-100 UNIT
VCC = 2.5V~3.6V
VCC = 2.7V~3.6V VCC = 2.5V~3.6V
MIN.
MAX.
MIN.
MAX.
MIN.
MAX.
Read Cycle Time
Address Access Time
Chip Enable Access Time
Output Enable Access Time
Chip Enable to Output in Low Z
Output Enable to Output in Low Z
Chip Disable to Output in High Z
Output Disable to Output in High Z
Output Hold from Address Change
tRC
tAA
tACE
tOE
tCLZ*
tOLZ*
tCHZ*
tOHZ*
tOH
55
-
-
-
10
5
-
-
10
-
70
-
-
-
10
5
-
-
10
-
100
-
-
-
100
100
50
-
ns
ns
ns
ns
ns
ns
ns
ns
ns
55
55
30
-
70
70
35
-
-
10
5
-
-
10
-
-
-
20
20
-
25
25
-
30
30
-
(2) WRITE CYCLE
PARAMETER
SYMBOL
UT62L2568-55
UT62L2568-70
UT62L2568-100 UNIT
VCC = 2.5V~3.6V
VCC = 2.7V~3.6V VCC = 2.5V~3.6V
MIN.
55
50
50
0
45
0
25
0
MAX.
MIN.
70
60
60
0
55
0
30
0
MAX.
MIN.
100
80
80
0
70
0
40
0
MAX.
Write Cycle Time
tWC
tAW
tCW
tAS
tWP
tWR
tDW
tDH
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Address Valid to End of Write
Chip Enable to End of Write
Address Set-up Time
Write Pulse Width
Write Recovery Time
Data to Write Time Overlap
Data Hold from End of Write Time
Output Active from End of Write
Write to Output in High Z
tOW*
tWHZ*
5
-
5
-
5
-
20
25
30
*These parameters are guaranteed by device characterization, but not production tested.
UTRON TECHNOLOGY INC.
P80059
1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.
TEL: 886-3-5777882
FAX: 886-3-5777919
5
UTRON
UT62L2568
256K X 8 BIT LOW POWER CMOS SRAM
Rev. 1.1
TIMING WAVEFORMS
READ CYCLE 1 (Address Controlled)
(1,2)
tRC
Address
tAA
tOH
tOH
Previous data valid
Dout
Data Valid
READ CYCLE 2 (
and CE2 and
Controlled)
tRC
(1,3,4,5)
CE
OE
Address
CE
tAA
tACE
CE2
OE
tCHZ
tOHZ
tOH
tOE
tCLZ
tOLZ
Dout
High-Z
High-Z
Data Valid
Notes :
1.
is high for read cycle.
WE
2.Device is continuously selected
=low,
=low, CE2=high.
CE
OE
3.Address must be valid prior to or coincident with
=low, CE2=high; otherwise tAA is the limiting parameter.
±
CE
4.tCLZ, tOLZ, tCHZ and tOHZ are specified with CL=5pF. Transition is measured 500mV from steady state.
5.At any given temperature and voltage condition, tCHZ is less than tCLZ is less than tOHZ is less than tOLZ
.
UTRON TECHNOLOGY INC.
P80059
1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.
TEL: 886-3-5777882
FAX: 886-3-5777919
6
UTRON
UT62L2568
256K X 8 BIT LOW POWER CMOS SRAM
Rev. 1.1
WRITE CYCLE 1 (
Controlled)
(1,2,3,5,6)
WE
tWC
Address
CE
tAW
tCW
CE2
tAS
tWP
tWR
WE
tWHZ
(4)
tOW
High-Z
Dout
Din
(4)
tDW
tDH
Data Valid
WRITE CYCLE 2 (
and CE2 Controlled)
(1,2,5,6)
CE
tWC
Address
tAW
CE
tWR
tAS
tCW
CE2
WE
tWP
tWHZ
High-Z
(4)
Dout
Din
tDW
tDH
Data Valid
UTRON TECHNOLOGY INC.
1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.
TEL: 886-3-5777882 FAX: 886-3-5777919
P80059
7
UTRON
UT62L2568
256K X 8 BIT LOW POWER CMOS SRAM
Rev. 1.1
Notes :
1.
,
must be high or CE2 must be low during all address transitions.
WE CE
2.A write occurs during the overlap of a low
, high CE2, low
.
WE
CE
3.During a
controlled write cycle with
OE
low, tWP must be greater than tWHZ+tDW to allow the drivers to turn off and data to be placed
WE
on the bus.
4.During this period, I/O pins are in the output state, and input signals must not be applied.
5.If the low transition and CE2 high transition occurs simultaneously with or after low transition, the outputs remain in a high
CE
impedance state.
6.tOW and tWHZ are specified with CL = 5pF. Transition is measured 500mV from steady state.
WE
±
℃
℃
℃
℃
DATA RETENTION CHARACTERISTICS
(TA =0 to 70 / -20 to 80 (E))
PARAMETER
SYMBOL
TEST CONDITION
MIN.
TYP. MAX. UNIT
Vcc for Data Retention
VDR
1.5
-
3.6
V
≧
VCC-0.2V
CE
≦
or CE2 0.2V
Data Retention Current
IDR
VCC=1.5V
- L
-
-
10
1
80
10
A
µ
≧
VCC-0.2V
CE
- LL
A
µ
≦
or CE2 0.2V
Chip Disable to Data
Retention Time
Recovery Time
tCDR
tR
See Data Retention
Waveforms (below)
0
-
-
-
-
ns
ns
tRC
DATA RETENTION WAVEFORM
Low Vcc Data Retention Waveform (1) (
controlled)
CE
≧
VDR
1.5V
VCC
Vcc(min.)
Vcc(min.)
tCDR
tR
≧
CE
VCC-0.2V
VIH
VIH
CE
Low Vcc Data Retention Waveform (2) (CE2 controlled)
≧
≦
VDR
1.5V
0.2V
VCC
VCC(min.)
VCC(min.)
tCDR
tR
CE2
CE2
VIL
VIL
UTRON TECHNOLOGY INC.
1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.
TEL: 886-3-5777882 FAX: 886-3-5777919
P80059
8
UTRON
UT62L2568
256K X 8 BIT LOW POWER CMOS SRAM
Rev. 1.1
PACKAGE OUTLINE DIMENSION
32 pin 8mm x 20mm TSOP-I Package Outline Dimension
UNIT
INCH(BASE)
0.047 (MAX)
MM(REF)
1.20 (MAX)
SYMBOL
A
A1
±
±
0.10 0.05
0.004 0.002
A2
±
±
0.039 0.002
1.00 0.05
0.008 + 0.002
- 0.001
0.20 + 0.05
-0.03
b
c
D
0.005 (TYP)
0.127 (TYP)
±
18.40 0.10
±
0.724 0.004
E
±
±
0.315 0.004
8.00 0.10
e
0.020 (TYP)
0.50 (TYP)
HD
L
±
±
20.00 0.20
±
0.50 0.10
0.787 0.008
±
0.0197 0.004
L1
y
Θ
±
±
0.0315 0.004
0.08 0.10
0.003 (MAX)
0.076 (MAX)
o
o
∼
∼
0
5o
0
5o
UTRON TECHNOLOGY INC.
1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.
TEL: 886-3-5777882 FAX: 886-3-5777919
P80059
9
UTRON
UT62L2568
256K X 8 BIT LOW POWER CMOS SRAM
Rev. 1.1
32 pin 8mm x 13.4mm STSOP Package Outline Dimension
HD
c
L
°
12 (2x)
°
12 (2x)
32
1
17
16
"A"
y
Seating Plane
D
°
12 (2X)
16
17
GAUGE PLANE
0
SEATING PLANE
L
°
12 (2X)
L1
"A" DATAIL VIEW
1
32
UNIT
INCH(BASE)
0.049 (MAX)
MM(REF)
SYMBOL
A
A1
A2
b
1.25 (MAX)
±
±
0.130 0.05
±
1.00 0.05
0.005 0.002
±
0.039 0.002
±
±
0.008 0.01
0.20 0.025
c
0.005 (TYP)
0.127 (TYP)
D
±
±
11.80 0.10
0.465 0.004
E
±
±
0.315 0.004
8.00 0.10
e
0.020 (TYP)
0.50 (TYP)
HD
L
±
±
13.40 0.20.
±
0.50 0.10
0.528 0.008
±
0.0197 0.004
L1
y
Θ
±
±
0.0315 0.004
0.8 0.10
0.003 (MAX)
0.076 (MAX)
o
o
∼
∼
0
5o
0
5o
UTRON TECHNOLOGY INC.
P80059
1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.
TEL: 886-3-5777882 FAX: 886-3-5777919
10
UTRON
UT62L2568
256K X 8 BIT LOW POWER CMOS SRAM
Rev. 1.1
36 pin 6mm×8mm TFBGA Package Outline Dimension
UTRON TECHNOLOGY INC.
P80059
1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.
TEL: 886-3-5777882
FAX: 886-3-5777919
11
UTRON
UT62L2568
256K X 8 BIT LOW POWER CMOS SRAM
Rev. 1.1
ORDERING INFORMATION
COMMERCIAL TEMPERATURE
PART NO.
ACCESS TIME
STANDBY CURRENT
PACKAGE
(ns)
(µA) TYP.
UT62L2568LC-55L
UT62L2568LC-55LL
UT62L2568LC-70L
UT62L2568LC-70LL
UT62L2568LC-100L
UT62L2568LC-100LL
UT62L2568LS-55L
UT62L2568LS-55LL
UT62L2568LS-70L
UT62L2568LS-70LL
UT62L2568LS-100L
UT62L2568LS-100LL
UT62L2568BS-55L
UT62L2568BS-55LL
UT62L2568BS-70L
UT62L2568BS-70LL
UT62L2568BS-100L
UT62L2568BS-100LL
55
55
70
70
100
100
55
55
70
20
2
20
2
20
2
20
2
20
2
20
2
20
2
20
2
32 PIN TSOP-I
32 PIN TSOP-I
32 PIN TSOP-I
32 PIN TSOP-I
32 PIN TSOP-I
32 PIN TSOP-I
32 PIN STSOP
32 PIN STSOP
32 PIN STSOP
32 PIN STSOP
32 PIN STSOP
32 PIN STSOP
36 PIN TFBGA
36 PIN TFBGA
36 PIN TFBGA
36 PIN TFBGA
36 PIN TFBGA
36 PIN TFBGA
70
100
100
55
55
70
70
100
100
20
2
EXTENDED TEMPERATURE
PART NO.
ACCESS TIME
STANDBY CURRENT
PACKAGE
(ns)
(µA) TYP.
UT62L2568LC-55LE
UT62L2568LC-55LLE
UT62L2568LC-70LE
UT62L2568LC-70LLE
UT62L2568LC-100LE
UT62L2568LC-100LLE
UT62L2568LS-55LE
UT62L2568LS-55LLE
UT62L2568LS-70LE
UT62L2568LS-70LLE
UT62L2568LS-100LE
UT62L2568LS-100LLE
UT62L2568BS-55LE
UT62L2568BS-55LLE
UT62L2568BS-70LE
UT62L2568BS-70LLE
UT62L2568BS-100LE
UT62L2568BS-100LLE
55
55
70
70
100
100
55
55
70
20
2
20
2
20
2
20
2
20
2
20
2
20
2
20
2
32 PIN TSOP-I
32 PIN TSOP-I
32 PIN TSOP-I
32 PIN TSOP-I
32 PIN TSOP-I
32 PIN TSOP-I
32 PIN STSOP
32 PIN STSOP
32 PIN STSOP
32 PIN STSOP
32 PIN STSOP
32 PIN STSOP
36 PIN TFBGA
36 PIN TFBGA
36 PIN TFBGA
36 PIN TFBGA
36 PIN TFBGA
36 PIN TFBGA
70
100
100
55
55
70
70
100
100
20
2
UTRON TECHNOLOGY INC.
P80059
1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.
TEL: 886-3-5777882 FAX: 886-3-5777919
12
UTRON
UT62L2568
256K X 8 BIT LOW POWER CMOS SRAM
Rev. 1.1
ORDERING INFORMATION (for lead free product)
COMMERCIAL TEMPERATURE
PART NO.
ACCESS TIME
STANDBY CURRENT
PACKAGE
(ns)
(µA) TYP.
UT62L2568LCL-55L
UT62L2568LCL-55LL
UT62L2568LCL-70L
UT62L2568LCL-70LL
UT62L2568LCL-100L
UT62L2568LCL-100LL
UT62L2568LSL-55L
UT62L2568LSL-55LL
UT62L2568LSL-70L
UT62L2568LSL-70LL
UT62L2568LSL-100L
UT62L2568LSL-100LL
UT62L2568BSL-55L
UT62L2568BSL-55LL
UT62L2568BSL-70L
UT62L2568BSL-70LL
UT62L2568BSL-100L
UT62L2568BSL-100LL
55
55
70
70
100
100
55
55
70
20
2
20
2
20
2
20
2
20
2
20
2
20
2
20
2
32 PIN TSOP-I
32 PIN TSOP-I
32 PIN TSOP-I
32 PIN TSOP-I
32 PIN TSOP-I
32 PIN TSOP-I
32 PIN STSOP
32 PIN STSOP
32 PIN STSOP
32 PIN STSOP
32 PIN STSOP
32 PIN STSOP
36 PIN TFBGA
36 PIN TFBGA
36 PIN TFBGA
36 PIN TFBGA
36 PIN TFBGA
36 PIN TFBGA
70
100
100
55
55
70
70
100
100
20
2
EXTENDED TEMPERATURE
PART NO.
ACCESS TIME
STANDBY CURRENT
PACKAGE
(ns)
(µA) TYP.
UT62L2568LCL-55LE
UT62L2568LCL-55LLE
UT62L2568LCL-70LE
UT62L2568LCL-70LLE
UT62L2568LCL-100LE
UT62L2568LCL-100LLE
UT62L2568LSL-55LE
UT62L2568LSL-55LLE
UT62L2568LSL-70LE
UT62L2568LSL-70LLE
UT62L2568LSL-100LE
UT62L2568LSL-100LLE
UT62L2568BSL-55LE
UT62L2568BSL-55LLE
UT62L2568BSL-70LE
UT62L2568BSL-70LLE
UT62L2568BSL-100LE
UT62L2568BSL-100LLE
55
55
70
70
100
100
55
55
70
20
2
20
2
20
2
20
2
20
2
20
2
20
2
20
2
32 PIN TSOP-I
32 PIN TSOP-I
32 PIN TSOP-I
32 PIN TSOP-I
32 PIN TSOP-I
32 PIN TSOP-I
32 PIN STSOP
32 PIN STSOP
32 PIN STSOP
32 PIN STSOP
32 PIN STSOP
32 PIN STSOP
36 PIN TFBGA
36 PIN TFBGA
36 PIN TFBGA
36 PIN TFBGA
36 PIN TFBGA
36 PIN TFBGA
70
100
100
55
55
70
70
100
100
20
2
UTRON TECHNOLOGY INC.
P80059
1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.
TEL: 886-3-5777882 FAX: 886-3-5777919
13
UTRON
UT62L2568
256K X 8 BIT LOW POWER CMOS SRAM
Rev. 1.1
This page is left blank intentionally.
UTRON TECHNOLOGY INC.
P80059
1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.
TEL: 886-3-5777882
FAX: 886-3-5777919
14
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