XL0102DA00BU [ETC]

SENSITIVE GATE SCR; 敏感SCR门


型号：	XL0102DA00BU
厂家：	ETC
描述：	SENSITIVE GATE SCR 敏感SCR门
文件：	总2页 (文件大小：81K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

XL0102DA

SENSITIVE GATE SCR

TO92

(Plastic)

On-State Current

0.8 Amp

Gate Trigger Current

< 200 µA

Off-State Voltage

400 V

This series of Silicon Controlled Rectifiers

uses a high performance PNPN

technology.

This part is intended for general purpose

applications where high gate sensitivity is

required.

Absolute Maximum Ratings, according to IEC publication No. 134

SYMBOL

PARAMETER

On-state Current

CONDITIONS

Min.

Max.

Unit

All Conduction Angle, T_L= 60 ºC

0.8

0.5

I_T(RMS)

Average On-state Current

Non-repetitive On-State Current

Fusing Current

Half Cycle, Q = 180 º, T_L= 60 ºC

I_T(AV)

I_TSM

I²t

V_GRM

I_GM

P_GM

P_G(AV)

T_j

T_stg

T_sld

Half Cycle, 60 Hz, T

Half Cycle, 50 Hz, T

t = 10ms, Half Cycle

_GR= 10 µA

= 25 ºC

= 25º C

A²s

0.24

Peak Reverse Gate Voltage

Peak Gate Current

20 µs max.

20ms max.

Peak Gate Dissipation

Gate Dissipation

ºC

0.1

Operating Temperature

Storage Temperature

-40

+125

+150

260

Soldering Temperature

1.6 mm from case, 10s max.

SYMBOL

PARAMETER

CONDITIONS

VOLTAGE

Unit

R_GK= 1 KW

Repetitive Peak Off State

Voltage

400

V_DRM

Jan - 02

XL0102DA

SENSITIVE GATE SCR

Electrical Characteristics

Unit

SYMBOL

PARAMETER

CONDITIONS

SENSITIVITY

200

100

Gate Trigger Current

V_D= 12 V_DC, R_L= 140W, T_j= 25 ºC

MAX

MIN

µA

I_GT

I_DRM

Off-State Leakage Current

V_D

= V_DRM, R_GK= 1KW, T_j= 125 ºC

T_j= 25 ºC

I_T= 1.6 Amp, tp = 380 µs, T_j= 25 ºC

V_D= 12 V_DC, R_L= 140W, T_j= 25 ºC

V_DRM, R_GK= 1KW, R_L= 3.3KW, T_j= 125 ºC

I_T= 50 mA , R_GK= 1KW, T_j= 25 ºC

V_TM

V_GT

On-state Voltage

1.93

0.8

0.1

Gate Trigger Voltage

Gate Non-Trigger Voltage

Holding Current

V_GD

I_H

I_L

MAX

TYP

V/µs

Latching Current

I_G= 1 mA, R_GK= 1KW, T_j= 25 ºC

V_D= 0.67 x V_DRM, R_GK= 1KW, T_j= 125 ºC

Critical Rate of Voltage

Rise

dv / dt

Critical Rate of Current Rise I_G= 10 mA, di_G/dt = 0.1 A/µs, T_j= 125 ºC

A/µs

di / dt

t_gd

MIN

TYP

500

Gate Controlled Delay Time I_G= 10 mA, di_G/dt = 0.1 A/µs, T

= 25 ºC

TM = 3x IT(AV),V = VDRM

ºC/W

R_th(j-l)

R_th(j-a)

Thermal Resistance

Junction-Leads for DC

Thermal Resistance

Junction-Ambient

150

PART NUMBER INFORMATION

XL 01

00 BU

PACKAGING

FORMING

CHRISTMAS LIGHT

CASE

VOLTAGE

CURRENT

SENSITIVITY

TO92 (Plastic)

PACKAGE MECHANICAL DATA

DIMENSIONS

REF.

Milimeters

Typ.

1.5

Min.

Max.

4.55

2.42

1.15

4.55

12.7

3.55

4.6

4.65

2.66

1.39

4.65

15.5

3.65

2.54

1.27

4.6

14.1

3.6

1.5

0.43

0.38

0.33

0.48

0.43

Marking: type number

Weight: 0.2 g

Jan - 02

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