XN06116|XN6116 [ETC]

Composite Device - Composite Transistors ; 复合设备 - 复合晶体管\n


型号：	XN06116\|XN6116
厂家：	ETC
描述：	Composite Device - Composite Transistors 复合设备 - 复合晶体管\n 晶体晶体管
文件：	总3页 (文件大小：81K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Composite Transistors

XN06116 (XN6116)

Silicon PNP epitaxial planar transistor

Unit: mm

+0.20

–0.05

1.9 0.1

(0.95) (0.95)

2.90

+0.10

For switching/digital circuits

0.16

–0.06

■ Features

• Two elements incorporated into one package

(Transistors with built-in resistor)

• Reduction of the mounting area and assembly cost by one half

+0.10

–0.05

0.30

0.50

+0.10

–0.05

■ Basic Part Number

10˚

•

UNR2116 (UN2116) × 2

■ Absolute Maximum Ratings T_a= 25°C

Parameter

Symbol

Rating

Unit

1: Collector (Tr1)

2: Base (Tr1)

3: Collector (Tr2)

EIAJ: SC-74

4: Base (Tr2)

5: Emitter (Tr2)

6: Emitter (Tr1)

(Emitter open)

Collector-base voltage

Collector-emitter voltage

Collector current

V_CBO

V_CEO

I_C

−50

(Base open)

Mini6-G1 Package

−100

Total power dissipation

Junction temperature

Storage temperature

P_T

T_j

300

150

°C

Marking Symbol: 6Y

Internal Connection

T_stg

−55 to +150

°C

Tr1

Tr2

■ Electrical Characteristics T_a= 25°C 3°C

Parameter

Symbol

V_CBO

V_CEO

I_CBO

Conditions

Min

−50

Typ

Max

Unit

Collector-base voltage (Emitter open)

Collector-emitter voltage (Base open)

Collector-base cutoff current (Emitter open)

Collector-emitter cutoff current (Base open)

Emitter-base cutoff current (Collector open)

Forward current transfer ratio

h_FERatio ^*

I_C= −10 µA, I_E= 0

I_C= −2 mA, I_B= 0

V_CB= −50 V, I_E= 0

V_CE= −50 V, I_B= 0

V_EB= −6 V, I_C= 0

V_CE= −10 V, I_C= −5 mA

− 0.1

− 0.5

− 0.01

460

µA



I_CEO

I_EBO

h_FE

160

h_FE(SmallV_CE= −10 V, I_C= −5 mA

/Large)

0.50

0.99



Collector-emitter saturation voltage

Output voltage high-level

Output voltage low-level

Input resistance

V_CE(sat)I_C= −10 mA, I_B= − 0.3 mA

− 0.25

V_OH

V_OL

R₁

V_CC= −5 V, V_B= − 0.5 V, R_L= 1 kΩ

−4.9

V_CC= −5 V, V_B= −2.5 V, R_L= 1 kΩ

− 0.2

−30%

4.7

+30%

kΩ

MHz

Transition frequency

f_T

V_CB= −10 V, I_E= 1 mA, f = 200 MHz

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. : Ratio between 2 elements

Note) The part number in the parenthesis shows conventional part number.

Publication date: July 2003

SJJ00098BED

XN06116

P_T T_a

I_C V_CE

V_CE(sat) I_C

−100

−10

−1

−160

−120

−80

−40

500

400

300

200

100

I_C/ I_B= 10

T_a= 25°C

I_B= −1.0 mA

−0.9 mA

−0.8 mA

−0.7 mA

−0.6 mA

−0.5 mA

−0.4 mA

−0.3 mA

−0.2 mA

T_a= 75°C

25°C

−0.1

−0.1 mA

−25°C

−1

−

0.01

−0.1

−10

−100

−2

−4

−6

−8

−10 −12

120

160

(

)

Collector current I_CmA

( )

Collector-emitter voltage V_CEV

(

)

Ambient temperature T_a°C

h_FE I_C

C_ob V_CB

I_O V_IN

−10⁴

−10³

−10²

−10

−1

400

300

200

100

V_O= −5 V

_a= 25°C

f = 1 MHz

I_E= 0

V_CE= −10 V

T_a= 25°C

T_a= 75°C

25°C

−25°C

−0.1

−1

−10

−100

−0.4 −0.6 −0.8

−1.0

−1.2

−1.4

−1

−10

−100

−1000

Collector-base voltage V_CB(V)

( )

(

)

Input voltage V_IN

Collector current I_CmA

V_IN I_O

−100

V_O= −0.2 V

T_a= 25°C

−10

−1

−0.1

−0.01

−0.1

−1

−10

−100

(

)

Output current I_OmA

SJJ00098BED

Request for your special attention and precautions in using the technical information

and semiconductors described in this material

(1) An export permit needs to be obtained from the competent authorities of the Japanese Government

if any of the products or technologies described in this material and controlled under the "Foreign

Exchange and Foreign Trade Law" is to be exported or taken out of Japan.

(2) The technical information described in this material is limited to showing representative characteris-

tics and applied circuits examples of the products. It neither warrants non-infringement of intellec-

tual property right or any other rights owned by our company or a third party, nor grants any license.

(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the

product or technologies as described in this material.

(4) The products described in this material are intended to be used for standard applications or general

electronic equipment (such as office equipment, communications equipment, measuring instru-

ments and household appliances).

Consult our sales staff in advance for information on the following applications:

• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,

combustion equipment, life support systems and safety devices) in which exceptional quality and

reliability are required, or if the failure or malfunction of the products may directly jeopardize life or

harm the human body.

• Any applications other than the standard applications intended.

(5) The products and product specifications described in this material are subject to change without

notice for modification and/or improvement. At the final stage of your design, purchasing, or use of

the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that

the latest specifications satisfy your requirements.

(6) When designing your equipment, comply with the guaranteed values, in particular those of maxi-

mum rating, the range of operating power supply voltage, and heat radiation characteristics. Other-

wise, we will not be liable for any defect which may arise later in your equipment.

Even when the products are used within the guaranteed values, take into the consideration of

incidence of break down and failure mode, possible to occur to semiconductor products. Measures

on the systems such as redundant design, arresting the spread of fire or preventing glitch are

recommended in order to prevent physical injury, fire, social damages, for example, by using the

products.

(7) When using products for which damp-proof packing is required, observe the conditions (including

shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets

are individually exchanged.

(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written

permission of Matsushita Electric Industrial Co., Ltd.

2002 JUL

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