XP04654|XP4654 [ETC]
Composite Device - Composite Transistors ; 复合设备 - 复合晶体管\n
| 型号： | XP04654|XP4654 |
| 厂家： | 
ETC |
| 描述： | Composite Device - Composite Transistors
|
| 文件： | 总5页 (文件大小：124K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Composite Transistors
XP04654 (XP4654)
Silicon NPN epitaxial planar type (Tr1)
Silicon PNP epitaxial planar type (Tr2)
Unit: mm
+0.05
For high-speed switching
0.12
–0.02
0.2 0.05
5
6
4
3
■ Features
• Two elements incorporated into one package
• Reduction of the mounting area and assembly cost by one half
1
2
(0.65) (0.65)
■ Basic Part Number
• 2SC3757 + 2SA1738
1.3 0.1
2.0 0.1
10˚
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Tr1
Collector-base voltage
(Emitter open)
VCBO
40
V
1: Emitter (Tr1)
2: Base (Tr1)
3: Collector (Tr2)
EIAJ: SC-88
4: Emitter (Tr2)
5: Base (Tr2)
6: Collector (Tr1)
SMini6-G1 Package
Collector-emitter voltage
(E-B short)
VCES
VEBO
40
5
V
V
Emitter-base voltage
(Collector open)
Marking Symbol: ED
Internal Connection
Collector current
IC
ICP
100
300
−15
mA
mA
V
Peak collector current
6
5
4
Tr2
Collector-base voltage
(Emitter open)
VCBO
Tr1
Tr2
3
Collector-emitter voltage
(E-B short)
VCES
VEBO
−15
−4
V
V
Emitter-base voltage
(Collector open)
1
2
Collector current
IC
ICP
PT
mA
mA
mW
°C
−50
−100
Peak collector current
Overall Total power dissipation
Junction temperature
150
Tj
150
Storage temperature
Tstg
−55 to +150
°C
Note) The part number in the parenthesis shows conventional part number.
Publication date: February 2004
SJJ00188BED
1
XP04654
■ Electrical Characteristics Ta = 25°C 3°C
• Tr1
Parameter
Symbol
ICBO
Conditions
VCB = 40 V, IE = 0
Min
Typ
Max
0.1
Unit
µA
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
IEBO
VEB = 4 V, IC = 0
0.1
µA
Forward current transfer ratio
hFE
VCE = 1 V, IC = 10 mA
60
320
Collector-emitter saturation voltage
VCE(sat) IC = 10 mA, IB = 1 mA
VBE(sat) IC = 10 mA, IB = 1 mA
0.17
0.25
V
Base-emitter saturation voltage
Transition frequency
1.0
6
V
MHz
pF
fT
VCB = 10 V, IE = −10 mA, f = 200 MHz
450
2
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
(Common base, input open circuited)
Turn-on time
Turn-off time
Storage time
ton
toff
tstg
17
17
10
ns
ns
ns
Refer to the switching time measurement
circuit
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
• Tr2
Parameter
Symbol
ICBO
Conditions
VCB = −8 V, IE = 0
Min
Typ
Max
− 0.1
− 0.1
150
Unit
µA
µA
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
IEBO
VEB = −3 V, IC = 0
hFE1
VCE = −1 V, IC = −10 mA
VCE = −1 V, IC = −1 mA
50
30
hFE2
Collector-emitter saturation voltage
Transition frequency
VCE(sat) IC = −10 mA, IB = −1 mA
− 0.1 − 0.2
V
MHz
pF
fT
VCB = −10 V, IE = 10 mA, f = 200 MHz 800
VCB = −5 V, IE = 0, f = 1 MHz
1 500
1
Collector output capacitance
Cob
(Common base, input open circuited)
Turn-on time
Turn-off time
Storage time
ton
toff
tstg
Refer to the switching time measurement circuit
12
20
19
ns
ns
ns
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Common characteristics chart
PT Ta
250
200
150
100
50
0
0
40
80
120
160
(
)
Ambient temperature Ta °C
SJJ00188BED
2
XP04654
Characteristics charts of Tr1
Switching time measurement circuit
ton , toff test circuit
tstg test circuit
0.1 µF
0.1 µF
1 kΩ
VOUT
VOUT
A
220 Ω
910 Ω
500 Ω
50 Ω
90 Ω
0.1 µF
VIN = 10 V 3.3 kΩ
VIN = 10 V
50 Ω
VCC = 3 V
VCC = 10 V
3.3 kΩ
500 Ω
VBB = 2 V
50 Ω
VBB = −3 V
10%
10%
VIN
VIN
10%
90%
toff
VOUT
VOUT
90%
ton
10%
tstg
(Waveform at A)
IC VCE
VCE(sat) IC
VBE(sat) IC
100
10
100
10
1
120
100
80
60
40
20
0
IC / IB = 10
Ta = 25°C
IB = 3.0 mA
2.5 mA
2.0 mA
1.5 mA
1.0 mA
Ta = −25°C
25°C
1
75°C
Ta = 75°C
−25°C
25°C
0.5 mA
0.1
0.01
0.1
0.01
0.1
1
10
100
1000
1
10
100
0
0.2
0.4
0.6
0.8
1.0
1.2
(
)
Collector current IC mA
(
)
(
)
V
Collector current IC mA
Collector-emitter voltage VCE
hFE IC
fT IE
Cob VCB
600
500
400
300
200
100
6
5
4
3
2
1
0
600
500
400
300
200
100
0
IE = 0
f = 1 MHz
Ta = 25°C
VCE = 1 V
VCB = 10 V
Ta = 25°C
Ta = 75°C
25°C
−25°C
0
−1
−10
−100
−1000
1
10
100
0.1
1
10
100
(
)
Emitter current IE mA
( )
V
(
)
Collector-base voltage VCB
Collector current IC mA
SJJ00188BED
3
XP04654
Characteristics charts of Tr2
Switching time measurement circuit
ton , toff test circuit
tstg test circuit
VBB
VCC = −1.5 V
VBB = −10 V VCC = −3 V
2 kΩ
62 Ω
VOUT
508 Ω
34 Ω
30 Ω
VOUT
0.1 µF
51 Ω
0.1 µF
51 Ω
52 Ω
VIN
VIN
0
10%
90%
0
VIN
VOUT
VIN
VOUT
90%
90%
90%
10%
toff
VIN = 9.8 V
ton
VIN = −5.8 V
tstg
VIN = 9.0 V
VBB = Ground VBB = −8.0 V
IC VCE
VCE(sat) IC
VBE(sat) IC
−60
−50
−40
−30
−20
−10
0
−100
−10
−100
−10
IC / IB = 10
IC / IB = 10
Ta = 25°C
IB = −600 µA
−500 µA
−400 µA
Ta = 75°C
25°C
Ta = −25°C
25°C
75°C
−25°C
−300 µA
−200 µA
−1
−1
− 0.1
− 0.1
−100 µA
− 0.01
− 0.01
0
−2
−4
−6
−8
−10 −12
−1
−10
−100
−1000
−1
−10
−100
−1000
(
)
V
(
)
Collector-emitter voltage VCE
Collector current IC mA
(
)
Collector current IC mA
hFE IC
fT IE
Cob VCB
2400
2000
1600
1200
800
400
0
240
200
160
120
80
2.4
2.0
1.6
1.2
0.8
0.4
0
VCB = −10 V
f = 200 MHz
Ta = 25°C
IE = 0
f = 1 MHz
Ta = 25°C
VCE = −10 V
Ta = 75°C
25°C
−25°C
40
0
− 0.1
−1
−10
−100
1
10
100
−1
−10
−100
(
)
(
)
Collector current IC mA
Emitter current IE mA
(
)
V
Collector-base voltage VCB
SJJ00188BED
4
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of
the products or technical information described in this material and controlled under the "Foreign Exchange
and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteristics and
applied circuits examples of the products. It neither warrants non-infringement of intellectual property right
or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical
information as described in this material.
(4) The products described in this material are intended to be used for standard applications or general elec-
tronic equipment (such as office equipment, communications equipment, measuring instruments and house-
hold appliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combus-
tion equipment, life support systems and safety devices) in which exceptional quality and reliability are
required, or if the failure or malfunction of the products may directly jeopardize life or harm the human
body.
• Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without notice for
modification and/or improvement. At the final stage of your design, purchasing, or use of the products,
therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifica-
tions satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rat-
ing, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not
be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of
break down and failure mode, possible to occur to semiconductor products. Measures on the systems such
as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent
physical injury, fire, social damages, for example, by using the products.
(7) When using products for which damp-proof packing is required, observe the conditions (including shelf life
and amount of time let standing of unsealed items) agreed upon when specification sheets are individually
exchanged.
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written
permission of Matsushita Electric Industrial Co., Ltd.
2003 SEP
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