MMBV809LT1 [ETL]
Silicon Tuning Diode; 硅调谐二极管
| 型号： | MMBV809LT1 |
| 厂家： | 
E-TECH ELECTRONICS LTD |
| 描述： | Silicon Tuning Diode |
| 文件： | 总2页 (文件大小：102K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Silicon Tuning Diode
MMBV809LT1
This device is designed for 900 MHz frequency control
and tuning applications. It provides solid–state reliability in
replacement of mechanical tuning methods.
• Controlled and Uniform Tuning Ratio
• Available in Surface Mount Package
3
• Available in 8 mm Tape and Reel
1
1
3
(
2
ANODE
CATHODE
CASE 318–08, STYLE 8
SOT– 23 (TO–236AB)
MAXIMUM RATINGS(EACH DIODE)
Rating
Symbol
V R
Value
Unit
Vdc
mAdc
mW
Reverse Voltage
20
20
Forward Current
Device Dissipation(1) @T A = 25°C
I F
P D
225
Derate above 25°C
1.8
mW/°C
°C
Junction Temperature
Storage Temperature Range
T J
+125
T stg
–55 to +150
°C
DEVICE MARKING
MMBV809LT1=5K
ELECTRICAL CHARACTERISTICS(TA=25°C unless otherwise noted)
Characteristic
Reverse Breakdown Voltage
(IR=10µAdc)
Symbol
Min
Max
Unit
V (BR)R
20
—
Vdc
Reverse Voltage Leakage Current
(VR=15Vdc)
I
—
50
nAdc
R
Q,Figure of Merit CR,Capacitance Ratio
CTDiode Capacitance
Device Type
VR=3.0Vdc
f=500MHz
C2/C8
VR=2.0Vdc,f=1.0MHz
pF
f=1.0MHz(2)
Min
Typ
Max
Typ
Min
Max
MMBV809LT1
4.5
5.3
6.1
75
1.8
2.6
1. FR-5 Board 1.0 x 0.75 x 0.62 in.
2. CR is the ratio of Ct measured at 2.0 Vdc divided by Ct measured at 8.0 vdc
I5–1/2
MMBV809LT1
TYPICAL CHARACTERISTICS
10
9
8
7
6
5
4
3
2
1
0
1000
V
R =3Vdc
A = 25°C
T
100
10
10
100
1000
0.5
1
2
3
4
5
8
10
15
V R , REVERSE VOLTAGE (VOLTS)
f, FREQUENCY ( GHz )
Figure 1. Diode Capacitance
Figure 2. Figure of Merit
1.04
1000
V
R= 3.0Vdc
V
R= 3.0Vdc
1.03
1.02
1.01
1.00
0.99
0.98
0.97
0.96
f = 1.0MHz
f = 1.0MHz
800
600
400
–75
–50
–25
0
+25
+50
+75
+100 +125
0
0.2
0.4
0.6
0.8
1.0
1.2
T A , AMBIENTTEMPERATURE(°C
)
f, FREQUENCY ( GHz )
Figure 4. Diode Capacitance
Figure 3. Series Resistance
I5–2/2
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