FP10R12YT3 [EUPEC]
IGBT-modules; IGBT模块
| 型号： | FP10R12YT3 |
| 厂家： | 
EUPEC GMBH |
| 描述： | IGBT-modules |
| 文件： | 总10页 (文件大小：345K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Technische Information / technical information
IGBT-Module
IGBT-modules
FP10R12YT3
Vorläufige Daten
preliminary data
IGBT-Wechselrichter / IGBT-inverter
Höchstzulässige Werte / maximum rated values
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
TÝÎ = 25°C
V†Š»
1200
V
Kollektor-Dauergleichstrom
DC-collector current
T† = 80°C
T† = 25°C
I† ÒÓÑ
I†
10
16
A
A
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
t« = 1 ms, T† = 80°C
T† = 25°C
I†ç¢
PÚÓÚ
20
A
W
V
Gesamt-Verlustleistung
total power dissipation
69,5
+/-20
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
V•Š»
Charakteristische Werte / characteristic values
min. typ. max.
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
I† = 10 A, V•Š = 15 V, TÝÎ = 25°C
I† = 10 A, V•Š = 15 V, TÝÎ = 125°C
V†Š ÙÈÚ
1,90 2,45
2,15
V
V
Gate-Schwellenspannung
gate threshold voltage
I† = 0,30 mA, V†Š = V•Š, TÝÎ = 25°C
V•ŠÚÌ
Q•
5,0
5,8
0,10
0,0
6,5
V
µC
Â
Gateladung
gate charge
V•Š = -15 V ... +15 V
Interner Gatewiderstand
internal gate resistor
TÝÎ = 25°C
R•ÍÒÚ
CÍþÙ
CØþÙ
I†Š»
I•Š»
Eingangskapazität
input capacitance
f = 1 MHz, TÝÎ = 25°C, V†Š = 25 V, V•Š = 0 V
f = 1 MHz, TÝÎ = 25°C, V†Š = 25 V, V•Š = 0 V
V†Š = 1200 V, V•Š = 0 V, TÝÎ = 25°C
V†Š = 0 V, V•Š = 20 V, TÝÎ = 25°C
0,70
0,026
nF
nF
mA
nA
Rückwirkungskapazität
reverse transfer capacitance
Kollektor-Emitter Reststrom
collector-emitter cut-off current
5,0
Gate-Emitter Reststrom
gate-emitter leakage current
400
Einschaltverzögerungszeit (ind. Last)
turn-on delay time (inductive load)
I† = 10 A, V†Š = 600 V
V•Š = ±15 V, R•ÓÒ = 82 Â, TÝÎ = 25°C
V•Š = ±15 V, R•ÓÒ = 82 Â, TÝÎ = 125°C
tÁ ÓÒ
tØ
0,045
0,045
µs
µs
Anstiegszeit (induktive Last)
rise time (inductive load)
I† = 10 A, V†Š = 600 V
V•Š = ±15 V, R•ÓÒ = 82 Â, TÝÎ = 25°C
V•Š = ±15 V, R•ÓÒ = 82 Â, TÝÎ = 125°C
0,02
0,025
µs
µs
Abschaltverzögerungszeit (ind. Last)
turn-off delay time (inductive load)
I† = 10 A, V†Š = 600 V
V•Š = ±15 V, R•ÓËË = 82 Â, TÝÎ = 25°C
V•Š = ±15 V, R•ÓËË = 82 Â, TÝÎ = 125°C
tÁ ÓËË
tË
0,29
0,39
µs
µs
Fallzeit (induktive Last)
fall time (inductive load)
I† = 10 A, V†Š = 600 V
V•Š = ±15 V, R•ÓËË = 82 Â, TÝÎ = 25°C
V•Š = ±15 V, R•ÓËË = 82 Â, TÝÎ = 125°C
0,09
0,15
µs
µs
Einschaltverlustenergie pro Puls
turn-on energy loss per pulse
I† = 10 A, V†Š = 600 V, L» = 50 nH
V•Š = ±15 V, R•ÓÒ = 82 Â, TÝÎ = 25°C
V•Š = ±15 V, R•ÓÒ = 82 Â, TÝÎ = 125°C
EÓÒ
EÓËË
0,95
1,35
mJ
mJ
Abschaltverlustenergie pro Puls
turn-off energy loss per pulse
I† = 10 A, V†Š = 600 V, L» = 50 nH
V•Š = ±15 V, R•ÓËË = 82 Â, TÝÎ = 25°C
V•Š = ±15 V, R•ÓËË = 82 Â, TÝÎ = 125°C
0,67
1,05
mJ
mJ
Kurzschlußverhalten
SC data
t« ù 10 µs, V•Š ù 15 V
TÝÎù125°C, V†† = 900 V, V†ŠÑÈà = V†Š» -LÙ†Š ·di/dt
IȠ
35
A
Innerer Wärmewiderstand
thermal resistance, junction to case
pro IGBT
per IGBT
RÚÌœ†
RÚ̆™
1,60 1,80 K/W
0,55 K/W
Übergangs-Wärmewiderstand
thermal resistance, case to heatsink
pro IGBT / per IGBT
ð«ÈÙÚþ = 1 W/(m·K)
/
ðÃØþÈÙþ = 1 W/(m·K)
prepared by: Peter Kanschat
approved by: Ralf Keggenhoff
date of publication: 2004-1-13
revision: 2.1
1
Technische Information / technical information
IGBT-Module
IGBT-modules
FP10R12YT3
Vorläufige Daten
preliminary data
Diode-Wechselrichter / diode-inverter
Höchstzulässige Werte / maximum rated values
Periodische Spitzensperrspannung
repetitive peak reverse voltage
TÝÎ = 25°C
Vçç¢
IŒ
1200
10
V
A
Dauergleichstrom
DC forward current
Periodischer Spitzenstrom
t« = 1 ms
IŒç¢
I²t
20
A
repetitive peak forward current
Grenzlastintegral
Vç = 0 V, t« = 10 ms, TÝÎ = 125°C
I²t - value
20,0
A²s
Charakteristische Werte / characteristic values
min. typ. max.
Durchlassspannung
forward voltage
IŒ = 10 A, V•Š = 0 V, TÝÎ = 25°C
IŒ = 10 A, V•Š = 0 V, TÝÎ = 125°C
VŒ
Iç¢
QØ
1,65 2,10
1,65
V
V
Rückstromspitze
peak reverse recovery current
IŒ = 10 A, - diŒ/dt = 650 A/µs
Vç = 600 V, V•Š = -15 V, TÝÎ = 25°C
Vç = 600 V, V•Š = -15 V, TÝÎ = 125°C
16,0
16,0
A
A
Sperrverzögerungsladung
recovered charge
IŒ = 10 A, -diŒ/dt = 650 A/µs
Vç = 600 V, V•Š = -15 V, TÝÎ = 25°C
Vç = 600 V, V•Š = -15 V, TÝÎ = 125°C
1,00
1,80
µC
µC
Abschaltenergie pro Puls
reverse recovery energy
IŒ = 10 A, -diŒ/dt = 650 A/µs
Vç = 600 V, V•Š = -15 V, TÝÎ = 25°C
Vç = 600 V, V•Š = -15 V, TÝÎ = 125°C
EØþÊ
0,33
0,63
mJ
mJ
Innerer Wärmewiderstand
thermal resistance, junction to case
pro Diode
per diode
RÚÌœ†
RÚ̆™
1,95 2,20 K/W
Übergangs-Wärmewiderstand
thermal resistance, case to heatsink
pro Diode / per diode
/
0,65
K/W
ð«ÈÙÚþ = 1 W/(m·K)
ðÃØþÈÙþ = 1 W/(m·K)
Diode-Gleichrichter / diode-rectifier
Höchstzulässige Werte / maximum rated values
Periodische Rückw. Spitzensperrspannung
repetitive peak reverse voltage
TÝÎ = 25°C
Vçç¢
IŒç¢»¢
I碻¢
IŒ»¢
1600
25
V
A
A
Durchlassstrom Grenzeffektivwert pro Dio.
T† = 80°C
forward current RMS maximum per diode
Gleichrichter Ausgang Grenzeffektivstrom
T† = 80°C
25
maximum RMS current at Rectifier output
Stoßstrom Grenzwert
surge forward current
tÔ = 10 ms, TÝÎ = 25°C
tÔ = 10 ms, TÝÎ = 150°C
195
160
A
A
Grenzlastintegral
I²t - value
tÔ = 10 ms, TÝÎ = 25°C
tÔ = 10 ms, TÝÎ = 150°C
190
125
A²s
A²s
I²t
Charakteristische Werte / characteristic values
Durchlassspannung
TÝÎ = 150°C, IŒ = 10 A
forward voltage
min. typ. max.
0,95
VŒ
VÅ¥
rÅ
V
V
Schleusenspannung
TÝÎ = 150°C
0,78
17,0
threshold voltage
Ersatzwiderstand
TÝÎ = 150°C
mÂ
slope resistance
Sperrstrom
reverse current
TÝÎ = 150°C, Vç = 1600 V
Iç
2,00 5,00 mA
1,35 1,50 K/W
Innerer Wärmewiderstand
thermal resistance, junction to case
pro Diode
per diode
RÚÌœ†
RÚ̆™
Übergangs-Wärmewiderstand
thermal resistance, case to heatsink
pro Diode / per diode
/
0,60
K/W
ð«ÈÙÚþ = 1 W/(m·K)
ðÃØþÈÙþ = 1 W/(m·K)
prepared by: Peter Kanschat
approved by: Ralf Keggenhoff
date of publication: 2004-1-13
revision: 2.1
2
Technische Information / technical information
IGBT-Module
IGBT-modules
FP10R12YT3
Vorläufige Daten
preliminary data
IGBT-Brems-Chopper / IGBT-brake-chopper
Höchstzulässige Werte / maximum rated values
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
TÝÎ = 25°C
V†Š»
1200
V
Kollektor-Dauergleichstrom
DC-collector current
TÊ = 80°C
TÊ = 25°C
I†ÒÓÑ
I†
10
16
A
A
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
t« = 1 ms, T† = 80°C
T† = 25°C
I†ç¢
PÚÓÚ
20
A
W
V
Gesamt-Verlustleistung
total power dissipation
69,5
+/-20
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
V•Š»
Charakteristische Werte / characteristic values
min. typ. max.
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
I† = 10 A, V•Š = 15 V, TÝÎ = 25°C
I† = 10 A, V•Š = 15 V, TÝÎ = 125°C
1,90 2,45
2,15
V
V
V†Š ÙÈÚ
V•ŠÚÌ
Q•
Gate-Schwellenspannung
gate threshold voltage
I† = 0,30 mA, V†Š = V•Š, TÝÎ = 25°C
5,0
5,8
0,10
0,00
0,70
0,026
6,5
V
µC
Â
Gateladung
gate charge
V•Š = -15 V ... +15 V
Interner Gatewiderstand
internal gate resistor
R•ÍÒÚ
CÍþÙ
Eingangskapazität
input capacitance
f = 1 MHz, TÝÎ = 25°C
V†Š = 25 V, V•Š = 0 V
nF
nF
mA
nA
Rückwirkungskapazität
reverse transfer capacitance
f = 1 MHz, TÝÎ = 25°C
V†Š = 25 V, V•Š = 0 V
CØþÙ
I†Š»
Kollektor-Emitter Reststrom
collector-emitter cut-off current
V†Š = 1200 V, V•Š = 0 V, TÝÎ = 25°C
V†Š = 0 V, V•Š = 20 V, TÝÎ = 25°C
5,0
Gate-Emitter Reststrom
gate-emitter leakage current
I•Š»
400
Einschaltverzögerungszeit (ind. Last)
turn-on delay time (inductive load)
I† = 10 A, V†Š = 600 V
V•Š = ±15 V, R•ÓÒ = 82 Â, TÝÎ = 25°C
V•Š = ±15 V, R•ÓÒ = 82 Â, TÝÎ = 125°C
tÁ ÓÒ
tØ
0,045
0,045
µs
µs
Anstiegszeit (induktive Last)
rise time (inductive load)
I† = 10 A, V†Š = 600 V
V•Š = ±15 V, R•ÓÒ = 82 Â, TÝÎ = 25°C
V•Š = ±15 V, R•ÓÒ = 82 Â, TÝÎ = 125°C
0,02
0,025
µs
µs
Abschaltverzögerungszeit (ind. Last)
turn-off delay time (inductive load)
I† = 10 A, V†Š = 600 V
V•Š = ±15 V, R•ÓËË = 82 Â, TÝÎ = 25°C
V•Š = ±15 V, R•ÓËË = 82 Â, TÝÎ = 125°C
tÁ ÓËË
tË
0,28
0,39
µs
µs
Fallzeit (induktive Last)
fall time (inductive load)
I† = 10 A, V†Š = 600 V
V•Š = ±15 V, R•ÓËË = 82 Â, TÝÎ = 25°C
V•Š = ±15 V, R•ÓËË = 82 Â, TÝÎ = 125°C
0,09
0,15
µs
µs
Einschaltverlustenergie pro Puls
turn-on energy loss per pulse
I† = 10 A, V†Š = 600 V
V•Š = ±15 V, R•ÓÒ = 82 Â, TÝÎ = 25°C
V•Š = ±15 V, R•ÓÒ = 82 Â, TÝÎ = 125°C
EÓÒ
EÓËË
0,85
1,15
mJ
mJ
Abschaltverlustenergie pro Puls
turn-off energy loss per pulse
I† = 10 A, V†Š = 600 V
V•Š = ±15 V, R•ÓËË = 82 Â, TÝÎ = 25°C
V•Š = ±15 V, R•ÓËË = 82 Â, TÝÎ = 125°C
0,67
1,05
mJ
mJ
Kurzschlußverhalten
SC data
t« ù 10 µsec, V•Š ù 15 V
TÝÎù 125°C, V†† = 900 V, V†ŠÑÈà = V†Š» -LÙ†Š · di/dt
IȠ
35
A
Innerer Wärmewiderstand
thermal resistance, junction to case
pro IGBT
per IGBT
RÚÌœ†
RÚ̆™
1,60 1,80 K/W
0,55 K/W
Übergangs-Wärmewiderstand
thermal resistance, case to heatsink
pro IGBT / per IGBT
ð«ÈÙÚþ = 1 W/(m·K) / ðÃØþÈÙþ = 1 W/(m·K)
prepared by: Peter Kanschat
approved by: Ralf Keggenhoff
date of publication: 2004-1-13
revision: 2.1
3
Technische Information / technical information
IGBT-Module
IGBT-modules
FP10R12YT3
Vorläufige Daten
preliminary data
Diode-Brems-Chopper / Diode-brake-chopper
Höchstzulässige Werte / maximum rated values
Periodische Spitzensperrspannung
repetitive peak reverse voltage
TÝÎ = 25°C
Vçç¢
IŒ
1200
10
V
A
Dauergleichstrom
DC forward current
Periodischer Spitzenstrom
tÔ = 1 ms
IŒç¢
I²t
20
A
repetitive peak forw. current
Grenzlastintegral
Vç = 0 V, tÔ = 10 ms, TÝÎ = 125°C
I²t - value
11,0
A²s
Charakteristische Werte / characteristic values
min. typ. max.
Durchlaßspannung
forward voltage
IŒ = 10 A, V•Š = 0 V, TÝÎ = 25°C
IŒ = 10 A, V•Š = 0 V, TÝÎ = 125°C
1,85 2,30
1,90
V
V
VŒ
Rückstromspitze
peak reverse recovery current
IŒ = 10 A, -diŒ/dt = 200 A/µs
Vç = 600 V, V•Š = -15 V, TÝÎ = 25°C
Vç = 600 V, V•Š = -15 V, TÝÎ = 125°C
Iç¢
12,0
12,0
A
A
Sperrverzögerungsladung
recovered charge
IŒ = 10 A, -diŒ/dt = 200 A/µs
Vç = 600 V, V•Š = -15 V, TÝÎ = 25°C
Vç = 600 V, V•Š = -15 V, TÝÎ = 125°C
QØ
1,00
1,80
µC
µC
Abschaltenergie pro Puls
reverse recovery energy
IŒ = 10 A, -diŒ/dt = 200 A/µs
Vç = 600 V, V•Š = -15 V, TÝÎ = 25°C
Vç = 600 V, V•Š = -15 V, TÝÎ = 125°C
EØþÊ
0,55
0,85
mJ
mJ
Innerer Wärmewiderstand
thermal resistance, junction to case
pro Diode
per diode
RÚÌœ†
RÚ̆™
2,50 2,80 K/W
Übergangs-Wärmewiderstand
thermal resistance, case to heatsink
pro Diode / per diode
ð«ÈÙÚþ = 1 W/(m·K) /ðÃØþÈÙþ = 1 W/(m·K)
0,75
K/W
NTC-Widerstand / NTC-thermistor
Charakteristische Werte / characteristic values
Nennwiderstand
rated resistance
min. typ. max.
5,00
T† = 25°C
Rèë
ÆR/R
Pèë
kÂ
%
Abweichung von Ræåå
deviation of Ræåå
T† = 100°C, Ræåå = 493 Â
-5
5
Verlustleistung
power dissipation
T† = 25°C
20,0 mW
K
B-Wert
B-value
Rè = Rèë exp [Bèëõëå(1/Tè - 1/(298,15 K))]
Bèëõëå
3375
prepared by: Peter Kanschat
approved by: Ralf Keggenhoff
date of publication: 2004-1-13
revision: 2.1
4
Technische Information / technical information
IGBT-Module
IGBT-modules
FP10R12YT3
Vorläufige Daten
preliminary data
Modul / module
Isolations-Prüfspannung
RMS, f = 50 Hz, t = 1 min
insulation test voltage
Vš»¥¡
2,5
kV
Material für innere Isolation
material for internal insulation
AlèOé
Kriechstrecke
creepage distance
Kontakt - Kühlkörper / terminal to heatsink
Kontakt - Kontakt / terminal to terminal
13,5
7.5
mm
mm
Luftstrecke
clearance distance
Kontakt - Kühlkörper / terminal to heatsink
Kontakt - Kontakt / terminal to terminal
12,0
7.5
Vergleichszahl der Kriechwegbildung
comparative tracking index
CTI
> 225
min. typ. max.
40
Modulinduktivität
stray inductance module
LÙ†Š
nH
Modulleitungswiderstand,
Anschlüsse - Chip
module lead resistance,
terminals - chip
R††óôŠŠó
Rƒƒóô††ó
10,0
7,00
T† = 25°C, pro Schalter / per switch
mÂ
Höchstzulässige Sperrschichttemperatur
maximum junction temperature
TÝÎ ÑÈà
TÝÎ ÓÔ
TÙÚÃ
F
150
°C
°C
°C
N
Temperatur im Schaltbetrieb
temperature under switching conditions
-40
-40
40
125
125
80
Lagertemperatur
storage temperature
Anpreßkraft für mech. Bef. pro Feder
mountig force per clamp
-
Gewicht
weight
G
36
g
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine
Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehörigen technischen Erläuterungen.
This technical information specifies semiconductor devices but guarantees no characteristics.
It is valid with the appropriate technical explanations.
prepared by: Peter Kanschat
approved by: Ralf Keggenhoff
date of publication: 2004-1-13
revision: 2.1
5
Technische Information / technical information
IGBT-Module
IGBT-modules
FP10R12YT3
Vorläufige Daten
preliminary data
Ausgangskennlinie IGBT-Wechselr. (typisch)
output characteristic IGBT-inverter (typical)
I† = f (V†Š)
Ausgangskennlinienfeld IGBT-Wechselr. (typisch)
output characteristic IGBT-inverter (typical)
I† = f (V†Š)
V•Š = 15 V
TÝÎ = 125°C
20
20
18
16
14
12
10
8
TÝÎ = 25°C
TÝÎ = 125°C
18
16
14
12
10
8
V•Š = 19V
V•Š = 17V
V•Š = 15V
V•Š = 13V
V•Š = 11V
V•Š = 9V
6
6
4
4
2
2
0
0
0,0 0,4 0,8 1,2 1,6 2,0 2,4 2,8 3,2 3,6 4,0
V†Š [V]
0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0
V†Š [V]
Übertragungscharakteristik IGBT-Wechselr. (typisch)
transfer characteristic IGBT-inverter (typical)
I† = f (V•Š)
Schaltverluste IGBT-Wechselr. (typisch)
switching losses IGBT-inverter (typical)
EÓÒ = f (I†), EÓËË = f (I†)
V†Š = 20 V
V•Š = ±15 V, R•ÓÒ = 82 Â, R•ÓËË = 82 Â, V†Š = 600 V,
TÝÎ = 125°C
20
4,0
18
16
14
12
10
8
TÝÎ = 25°C
TÝÎ = 125°C
3,6
3,2
2,8
2,4
2,0
1,6
1,2
0,8
0,4
0,0
EÓÒ
EÓËË
6
4
2
0
5
6
7
8 9
V•Š [V]
10
11
12
0
2
4
6
8
10 12 14 16 18 20
I† [A]
prepared by: Peter Kanschat
approved by: Ralf Keggenhoff
date of publication: 2004-1-13
revision: 2.1
6
Technische Information / technical information
IGBT-Module
IGBT-modules
FP10R12YT3
Vorläufige Daten
preliminary data
Schaltverluste IGBT-Wechselr. (typisch)
switching losses IGBT-Inverter (typical)
EÓÒ = f (R•), EÓËË = f (R•)
Transienter Wärmewiderstand IGBT-Wechselr.
transient thermal impedance IGBT-inverter
ZÚÌœ™ = f (t)
V•Š = ±15 V, I† = 10 A, V†Š = 600 V, TÝÎ = 125°C
4,0
10
EÓÒ
EÓËË
ZÚÌœ™ : IGBT
3,5
3,0
2,5
2,0
1,5
1,0
0,5
0,0
1
i:
rÍ[K/W]: 0,133
τÍ[s]:
1
2
0,45
3
1,188
0,000352 0,0064823 0,1106875 0,1535065
4
0,379
0,1
0,001
50
100
150
200
R• [Â]
250
300
350
400
0,01
0,1
t [s]
1
10
Sicherer Rückwärts-Arbeitsbereich IGBT-Wr. (RBSOA)
reverse bias safe operating area IGBT-inv. (RBSOA)
I† = f (V†Š)
Durchlaßkennlinie der Diode-Wechselr. (typisch)
forward characteristic of diode-inverter (typical)
IŒ = f (VŒ)
V•Š = ±15 V, R•ÓËË = 82 Â, TÝÎ = 125°C
22
20
18
16
14
12
10
8
20
18
16
14
12
10
8
TÝÎ = 25°C
TÝÎ = 125°C
6
6
4
4
I†, Modul
I†, Chip
2
2
0
0
0
200
400
600 800
V†Š [V]
1000 1200 1400
0,0
0,5
1,0
1,5
VΠ[V]
2,0
2,5
prepared by: Peter Kanschat
approved by: Ralf Keggenhoff
date of publication: 2004-1-13
revision: 2.1
7
Technische Information / technical information
IGBT-Module
IGBT-modules
FP10R12YT3
Vorläufige Daten
preliminary data
Schaltverluste Diode-Wechselr. (typisch)
switching losses diode-inverter (typical)
EØþÊ = f (IŒ)
Schaltverluste Diode-Wechselr. (typisch)
switching losses diode-inverter (typical)
EØþÊ = f (R•)
R•ÓÒ = 82 Â, V†Š = 600 V, TÝÎ = 125°C
IŒ = 10 A, V†Š = 600 V, TÝÎ = 125°C
1,0
1,0
EØþÊ
EØþÊ
0,8
0,8
0,6
0,4
0,2
0,0
0,6
0,4
0,2
0,0
0
2
4
6
8
10 12 14 16 18 20
IΠ[A]
50
100
150
200
R• [Â]
250
300
350
400
Transienter Wärmewiderstand Diode-Wechselr.
transient thermal impedance diode-inverter
ZÚÌœ™ = f (t)
Durchlaßkennlinie der Diode-Gleichrichter (typisch)
forward characteristic of diode-rectifier (typical)
IŒ = f (VŒ)
10
20
ZÚÌœ™ : Diode
18
16
14
12
10
8
TÝÎ = 25°C
TÝÎ = 150°C
1
6
4
i:
rÍ[K/W]: 0,15
1
2
0,5
3
1,5
4
0,45
τÍ[s]:
2
0,0002952 0,0044276 0,1053625 0,1391219
0,1
0,001
0
0,01
0,1
t [s]
1
10
0,0
0,2
0,4
0,6
VΠ[V]
0,8
1,0
1,2
prepared by: Peter Kanschat
approved by: Ralf Keggenhoff
date of publication: 2004-1-13
revision: 2.1
8
Technische Information / technical information
IGBT-Module
IGBT-modules
FP10R12YT3
Vorläufige Daten
preliminary data
Ausgangskennlinie IGBT-Brems-Copper (typisch)
output characteristic IGBT-brake-chopper (typical)
I† = f (V†Š)
Durchlaßkennlinie der Diode-Brems-Chopper (typisch)
forward characteristic of diode-brake-chopper (typical)
IŒ = f (VŒ)
V•Š = 15 V
20
20
18
16
14
12
10
8
TÝÎ = 25°C
TÝÎ = 125°C
18
16
14
12
10
8
TÝÎ = 25°C
TÝÎ = 125°C
6
6
4
4
2
2
0
0
0,0 0,4 0,8 1,2 1,6 2,0 2,4 2,8 3,2 3,6 4,0
V†Š [V]
0,0
0,5
1,0
1,5
VΠ[V]
2,0
2,5
3,0
NTC-Temperaturkennlinie (typisch)
NTC-temperature characteristic (typical)
R = f (T)
100000
RÚáÔ
10000
1000
100
0
20
40
60
80
T† [°C]
100 120 140 160
prepared by: Peter Kanschat
approved by: Ralf Keggenhoff
date of publication: 2004-1-13
revision: 2.1
9
Technische Information / technical information
IGBT-Module
IGBT-modules
FP10R12YT3
Vorläufige Daten
preliminary data
Schaltplan / circuit diagram
ϑ
Gehäuseabmessungen / package outlines
prepared by: Peter Kanschat
approved by: Ralf Keggenhoff
date of publication: 2004-1-13
revision: 2.1
10
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