EFA025A-100P [EXCELICS]
Low Distortion GaAs Power FET; 低失真功率的GaAs FET
| 型号： | EFA025A-100P |
| 厂家： | 
EXCELICS SEMICONDUCTOR, INC. |
| 描述： | Low Distortion GaAs Power FET |
| 文件： | 总3页 (文件大小：103K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
EFA025A-70
UPDATED 04/28/2006
Low Distortion GaAs Power FET
FEATURES
•
•
•
•
•
None-Hermetic Low Cost Ceramic 70mil Package
+20.0 dBm Output Power at 1dB Compression
10.0 dB Power Gain at 12GHz
7.0 dB Power Gain at 18GHz
Typical 1.50 dB Noise Figure and
10.0 dB Associated Gain at 12GHz
•
•
•
0.3 x 250 Micron Recessed “Mushroom” Gate
Si3N4 Passivation
Advanced Epitaxial Heterojunction Profile Provides High
Power Efficiency, Linearity and Reliability
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
SYMBOL
P1dB
PARAMETERS/TEST CONDITIONS1
MIN
17.0
TYP
MAX
UNITS
Output Power at 1dB Compression
DS = 6V, IDS ≈ 50% IDSS
f = 12GHz
f = 18GHz
20.0
20.0
10.0
7.0
dBm
V
Gain at 1dB Compression
VDS = 6V, IDS ≈ 50% IDSS
f = 12GHz
f = 18GHz
8.5
G1dB
PAE
dB
%
Power Added Efficiency at 1dB Compression
35
V
DS = 6V, IDS ≈ 50% IDSS
Noise Figure DS = 3V, IDS = 15mA
Associate Gain VDS = 3V, IDS = 15mA
f = 12GHz
f = 12GHz
NF
GA
V
1.5
10
dB
dB
mA
mS
V
f = 12GHz
IDSS
GM
Saturated Drain Current
Transconductance
V
V
DS = 3 V, VGS = 0 V
DS = 3 V, VGS = 0 V
35
30
65
105
-3.5
40
VP
Pinch-off Voltage
VDS = 3 V, IDS = 1.0 mA
-2.0
-15
-14
370*
BVGD
BVGS
RTH
Drain Breakdown Voltage
Source Breakdown Voltage
Thermal Resistance
I
GD = 1.0mA
GS = 1.0mA
-10
-6
V
I
V
oC/W
Notes: * Overall Rth depends on case mounting.
MAXIMUM RATINGS AT 25OC
SYMBOL
VDS
CHARACTERISTIC
Drain to Source Voltage
Gate to Source Voltage
Drain Current
VALUE
6 V
-4 V
VGS
IDS
52 mA
IGSF
Forward Gate Current
Input Power
1 mA
PIN
@ 3dB compression
310 mW
PT
Total Power Dissipation
Channel Temperature
Storage Temperature
TCH
150°C
TSTG
-65/+150°C
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 3
Revised May 2006
EFA025A-70
UPDATED 04/28/2006
Low Distortion GaAs Power FET
S-PARAMETERS
VDS = 3V, IDS ≈ 15mA
FREQ
(GHz)
--- S11 ---
--- S21 ---
MAG
--- S12 ---
--- S22 ---
MAG
MAG
1.020
0.956
0.911
0.867
0.814
0.748
0.689
0.656
0.636
0.584
0.545
0.552
0.589
0.563
0.571
0.607
0.625
0.618
0.643
0.691
0.653
0.634
0.655
0.646
0.563
0.596
ANG
-17.0
-37.8
-56.4
-73.0
-89.2
-105.5
-124.2
-144.7
-151.0
-166.5
164.8
142.3
134.6
120.6
96.0
ANG
159.6
142.6
125.5
109.6
93.8
MAG
ANG
ANG
-22.5
-28.0
-41.2
-52.4
-63.9
-78.5
-85.8
-92.9
-111.2
-131.4
-132.6
-133.6
-168.6
162.5
166.7
168.3
116.3
108.4
110.5
101.9
62.8
1.0
2.0
4.385
3.291
3.114
2.944
2.856
2.697
2.523
2.424
2.334
2.283
2.150
2.040
1.982
1.877
1.672
1.625
1.617
1.411
1.361
1.329
1.294
1.160
1.172
1.170
1.074
1.048
0.030
0.043
0.060
0.072
0.084
0.089
0.092
0.096
0.098
0.096
0.095
0.095
0.102
0.100
0.096
0.098
0.108
0.105
0.109
0.103
0.105
0.103
0.110
0.119
0.118
0.132
75.6
0.549
0.611
0.601
0.577
0.535
0.514
0.511
0.489
0.384
0.390
0.432
0.409
0.351
0.371
0.387
0.374
0.392
0.476
0.428
0.411
0.539
0.620
0.479
0.478
0.624
0.562
64.4
3.0
52.4
4.0
42.4
5.0
32.3
6.0
78.2
22.3
7.0
64.0
14.6
8.0
49.6
6.5
9.0
36.0
-2.9
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
19.0
20.0
21.0
22.0
23.0
24.0
25.0
26.0
21.7
-4.4
7.2
-10.8
-15.2
-21.4
-31.0
-35.6
-41.9
-49.6
-58.9
-68.8
-80.6
-95.7
-105.5
-120.8
-141.1
-159.4
-169.1
-5.8
-20.5
-36.0
-50.1
-63.4
-78.1
-92.5
-102.2
-116.0
-135.8
-146.5
-161.2
178.6
160.7
149.8
73.2
77.3
58.5
42.1
26.8
22.4
13.4
64.2
-8.1
61.0
-25.3
-39.9
-47.4
34.5
17.3
15.8
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 2 of 3
Revised May 2006
EFA025A-70
UPDATED 04/28/2006
Low Distortion GaAs Power FET
S-PARAMETERS
VDS = 3V, IDS ≈ ½ Idss
FREQ
--- S11 ---
--- S21 ---
MAG
--- S12 ---
MAG
--- S22 ---
MAG
(GHz)
MAG
0.985
0.953
0.913
0.872
0.825
0.779
0.734
0.688
0.642
0.614
0.591
0.572
0.598
0.631
0.631
0.634
0.658
0.694
0.672
0.707
0.761
0.736
0.703
0.723
0.705
0.676
ANG
-18.8
-38
ANG
161.4
142.7
125.5
109.5
94.3
ANG
76.6
65.9
54.2
46.2
38.8
34.4
30.9
33.5
44.6
48.1
50.4
50.2
40.5
29.4
18.3
5.6
ANG
-11.3
-24.1
-36
1.0
2.0
3.482
3.329
3.108
2.97
0.013
0.025
0.031
0.037
0.04
0.803
0.786
0.768
0.755
0.731
0.703
0.685
0.66
3.0
-56
4.0
-73.2
-89.3
-102.7
-117.1
-130.5
-152.3
-173.2
177.4
163.7
138.2
115.4
102.2
87.3
-45.6
-54.5
-66.2
-76.8
-85.6
-91.4
-102.2
-117.7
-131.9
-144.4
-158.9
179.8
158.4
145.1
132.5
113.1
96.6
5.0
2.867
2.713
2.559
2.448
2.42
6.0
79.7
0.04
7.0
65.3
0.039
0.033
0.037
0.044
0.054
0.071
0.086
0.097
0.112
0.126
0.128
0.15
8.0
52.1
9.0
37.6
0.661
0.654
0.642
0.641
0.638
0.642
0.667
0.685
0.665
0.731
0.761
0.836
0.826
0.83
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
19.0
20.0
21.0
22.0
23.0
24.0
25.0
26.0
2.355
2.312
2.282
2.188
2.036
1.97
21.8
8.6
-5.4
-22
-38.8
-54.9
-72.4
-87.7
-99.5
-116.1
-132.9
-148.4
-161.3
-178.5
162.6
146.3
131.8
1.909
1.685
1.58
70.3
-2.1
59
-17.2
-30.5
-43.3
-56.3
-68.7
-84.6
-101.6
-117.8
-131
42
1.467
1.399
1.29
0.137
0.143
0.143
0.138
0.134
0.134
0.14
25.5
14.9
84.7
3.9
1.184
1.103
1.043
1.017
1.017
76
-15.3
-33.5
-44.7
-59.8
0.824
0.841
0.843
0.831
58.8
41.2
28.4
0.156
16.6
NOISE-PARAMETERS
VDS = 3V, IDS ≈ 15mA
FREQ
(GHz)
2
Gamma Opt
Nfmin
MAG
0.83
0.75
0.65
0.58
0.45
0.40
0.41
0.47
0.53
0.62
0.57
0.59
0.57
ANG
28
(dB)
0.53
0.65
0.85
1.05
1.35
1.55
1.90
2.25
2.60
2.90
3.20
3.50
3.80
Rn/50
0.58
0.48
0.33
0.21
0.11
0.10
0.27
0.58
1.00
1.38
1.68
1.77
1.10
4
59
6
85
8
128
147
-170
-111
-69
-44
-14
1
10
12
14
16
18
20
22
24
39
26
66
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 3 of 3
Revised May 2006
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