EFA720A [EXCELICS]
Low Distortion GaAs Power FET; 低失真功率的GaAs FET
| 型号： | EFA720A |
| 厂家： | 
EXCELICS SEMICONDUCTOR, INC. |
| 描述： | Low Distortion GaAs Power FET |
| 文件： | 总2页 (文件大小：28K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
EFA720A
Excelics
DATA SHEET
Low Distortion GaAs Power FET
•
•
•
+35.5dBm TYPICAL OUTPUT POWER
17.5dB TYPICAL POWER GAIN AT 2GHz
0.5 X 7200 MICRON RECESSED
“MUSHROOM” GATE
•
•
Si3N4 PASSIVATION AND PLATED HEAT SINK
ADVANCED EPITAXIAL DOPING PROFILE
PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY
•
Idss SORTED IN 120mA PER BIN RANGE
±
Chip Thickness: 50 10 microns
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
(with > 20 microns Gold Plated Heat Sink (PHS) )
All Dimensions In Microns
SYMBOLS
P1dB
PARAMETERS/TEST CONDITIONS
MIN TYP MAX UNIT
Output Power at 1dB Compression
Vds=8V, Ids=50% Idss
Gain at 1dB Compression
Vds=8V, Ids=50% Idss
f= 2GHz
33.5
35.5
35.5
17.5
12.5
dBm
dB
f= 4GHz
f= 2GHz
f= 4GHz
16.0
G1dB
PAE
Power Added Efficiency at 1dB Compression
%
Vds=8V, Ids=50% Idss
f= 2GHz
36
Saturated Drain Current Vds=3V, Vgs=0V
1200 2040
2640
-3.5
mA
mS
V
Idss
Gm
Transconductance
Pinch-off Voltage
Vds=3V, Vgs=0V
840
1100
-2.0
-15
-14
6
Vds=3V, Ids=20mA
Vp
Drain Breakdown Voltage Igd=7.2mA
Source Breakdown Voltage Igs=7.2mA
Thermal Resistance (Au-Sn Eutectic Attach)
-12
-7
V
BVgd
BVgs
Rth
V
oC/W
MAXIMUM RATINGS AT 25OC
SYMBOLS
PARAMETERS
Drain-Source Voltage
Gate-Source Voltage
Drain Current
ABSOLUTE 1
12V
CONTINUOUS2
8V
Vds
Vgs
Ids
-8V
-4V
Idss
2.4A
Forward Gate Current
Input Power
180mA
34dBm
175oC
30mA
Igsf
Pin
Tch
Tstg
Pt
@3dB Compression
150oC
-65/150oC
Channel Temperature
Storage Temperature
Total Power Dissipation
-65/175oC
23 W
19 W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
EFA720A
DATA SHEET
Low Distortion GaAs Power FET
S-PARAMETERS
8V, 1/2 Idss
FREQ --- S11 ---
(GHz) MAG ANG MAG ANG MAG ANG MAG
0.500 0.954 -139.8 7.651 105.9 0.018
--- S21 ---
--- S12 ---
--- S22 ---
ANG
25.1 0.664 -173.7
20.5 0.680 -176.3
22.1 0.685 -177.2
25.1 0.689 -177.6
28.5 0.692 -177.7
32.1 0.696 -177.8
35.5 0.700 -177.8
38.8 0.704 -177.9
41.8 0.709 -177.9
44.6 0.715 -178.0
47.2 0.720 -178.1
49.5 0.726 -178.2
51.6 0.733 -178.4
53.5 0.739 -178.6
55.2 0.746 -178.8
56.7 0.753 -179.0
58.0 0.760 -179.3
59.1 0.767 -179.6
60.1 0.774 -180.0
1.000 0.950 -160.3 4.004
1.500 0.949 -168.0 2.694
2.000 0.949 -172.3 2.027
2.500 0.949 -175.1 1.624
3.000 0.949 -177.3 1.354
3.500 0.950 -179.1 1.161
4.000 0.950 179.4 1.016
4.500 0.951 178.1 0.903
5.000 0.951 176.9 0.812
5.500 0.952 175.7 0.737
6.000 0.953 174.7 0.675
6.500 0.953 173.6 0.621
7.000 0.954 172.7 0.575
7.500 0.955 171.7 0.535
8.000 0.956 170.7 0.499
8.500 0.957 169.8 0.468
9.000 0.957 168.9 0.439
9.500 0.958 168.0 0.413
10.000 0.959 167.1 0.389
92.2 0.019
84.8 0.020
79.1 0.020
74.1 0.021
69.5 0.022
65.2 0.023
61.0 0.024
57.0 0.025
53.1 0.026
49.3 0.028
45.6 0.029
42.0 0.031
38.5 0.033
35.1 0.034
31.8 0.036
28.6 0.038
25.5 0.040
22.6 0.042
19.7 0.044
61.0 0.782
179.6
Note:
The data included 0.7 mils diameter Au bonding wires:
3 gate wires, 20 mils each; 3 drain wires, 12 mils each; 8 source wires, 7 mils each.
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