EIB1415-0.3P [EXCELICS]
14.0-14.5 GHz 0.3-Watt Internally Matched Power FET; 14.0-14.5 GHz的0.3瓦内部匹配功率场效应管
| 型号： | EIB1415-0.3P |
| 厂家： | 
EXCELICS SEMICONDUCTOR, INC. |
| 描述： | 14.0-14.5 GHz 0.3-Watt Internally Matched Power FET |
| 文件： | 总1页 (文件大小：80K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
EIB1415-0.3P
UPDATED 8/31/2006
14.0-14.5 GHz 0.3-Watt Internally Matched Power FET
Excelics
EIB1415-0.3P
0.080
MIN
0.080
MIN
0.020
0.250
0.433 0.362
GATE
DRAIN
FEATURES
YYWW
•
•
•
•
•
•
14.0– 14.5GHz Bandwidth
SN
Input/Output Impedance Matched to 50 Ohms
+26.0 dBm Output Power at 1dB Compression
8.0 dB Power Gain at 1dB Compression
32% Power Added Efficiency
0.070
0.100
0.256
0.200
0.004
0.051
Non - Hermetic Metal Flange Package
0.025
ALL DIMENSIONS IN INCHES
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
SYMBOL
P1dB
PARAMETERS/TEST CONDITIONS1
MIN
TYP
MAX
UNITS
Output Power at 1dB Compression
DS = 8 V, IDSQ ≈ 120mA
f = 14.0-14.5GHz
24.0
26.0
dBm
V
Gain at 1dB Compression
VDS = 8 V, IDSQ ≈ 120mA
Gain Flatness
f = 14.0-14.5GHz
f = 14.0-14.5GHz
7.0
8.0
dB
dB
G1dB
±0.6
150
∆G
VDS = 8 V, IDSQ ≈ 120mA
Power Added Efficiency at 1dB Compression
VDS = 8 V, IDSQ ≈ 120mA
32
%
PAE
Id1dB
f = 14.0-14.5GHz
f = 14.0-14.5GHz
Drain Current at 1dB Compression
130
mA
Output 3rd Order Intermodulation Distortion
∆f=10MHz 2-Tone Test. Pout=14.0 dBm S.C.L
-43
-46
dBc
IM3
Vds = 8 V, IDSQ ≈ 65% IDSS
f = 14.5GHz
Saturated Drain Current
VDS = 3 V, VGS = 0 V
210
-2.0
55
300
-3.5
60
mA
V
oC/W
IDSS
VP
Pinch-off Voltage
Thermal Resistance3
VDS = 3 V, IDS = 2.0 mA
RTH
Note: 1) Tested with 200 Ohm gate resistor.
2) S.C.L. = Single Carrier Level.
3) Overall Rth depends on case mounting.
ABSOLUTE MAXIMUM RATING1,2
SYMBOLS
PARAMETERS
Drain-Source Voltage
ABSOLUTE1
CONTINUOUS2
8V
-4V
12
-5
Vds
Gate-Source Voltage
Forward Gate Current
Reverse Gate Current
Input Power
Vgs
3.6mA
1.2mA
Igsf
-0.6mA
24.0dBm
175 oC
-0.2mA
Igsr
@ 3dB Compression
175 oC
Pin
Channel Temperature
Storage Temperature
Total Power Dissipation
Tch
-65 to +175 oC
-65 to +175 oC
Tstg
Pt
2.5W
2.5W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 1
Revised August 2006
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