20N60A4 [FAIRCHILD]
600V, SMPS Series N-Channel IGBTs; 600V ，开关电源系列N沟道IGBT的
| 型号： | 20N60A4 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | 600V, SMPS Series N-Channel IGBTs |
| 文件： | 总8页 (文件大小：833K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HGT1S20N60A4S9Aꢀ
Data Sheet
March 2006
600V, SMPS Series N-Channel IGBTs
Features
The HGT1S20N60A4S9Aꢀis MOS gated high voltage switching
devices combining the best features of MOSFETs and bipolar
transistors. These devices have the high input impedance of
a MOSFET and the low on-state conduction loss of a bipolar
transistor. The much lower on-state voltage drop varies only
• >100kHz Operation at 390V, 20A
• 200kHz Operation at 390V, 12A
• 600V Switching SOA Capability
o
• Typical Fall Time. . . . . . . . . . . . . . . . . 55ns at T = 125 C
J
o
o
moderately between 25 C and 150 C.
• Low Conduction Loss
• Temperature Compensating SABER™ Model
www.intersil.com
This IGBT is ideal for many high voltage switching
applications operating at high frequencies where low
conduction losses are essential. This device has been
optimized for high frequency switch mode power
supplies.
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards
Formerly Developmental Type TA49339.
Packaging
JEDEC TO-263AB
Ordering Information
PART NUMBER
PACKAGE
BRAND
COLLECTOR
(FLANGE)
HGT1S20N60A4S9A
TO-263AB
20N60A4
NOTE: When ordering, use the entire part number.
G
C
E
Symbol
C
G
E
FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,682,195
4,803,533
4,888,627
4,417,385
4,605,948
4,684,413
4,809,045
4,890,143
4,430,792
4,620,211
4,694,313
4,809,047
4,901,127
4,443,931
4,631,564
4,717,679
4,810,665
4,904,609
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
4,587,713
4,644,637
4,801,986
4,883,767
©2006 Fairchild Semiconductor Corporation
HGT1S20N60A4S9A Rev. A
HGT1S20N60A4S9Aꢀ
o
Absolute Maximum Ratings T = 25 C, Unless Otherwise Specified
C
HGT1S20N60A4S9Aꢀ
UNITS
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
600
V
CES
Collector Current Continuous
o
At T = 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C
70
40
A
A
A
V
V
C25
o
At T = 110 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C
C110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
280
CM
GES
GEM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
±20
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
o
±30
Switching Safe Operating Area at T = 150 C (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA
J
100A at 600V
290
o
Power Dissipation Total at T = 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
C
W
D
o
o
Power Dissipation Derating T > 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2.32
W/ C
C
o
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T , T
J
-55 to 150
C
STG
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, See Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
o
300
260
C
C
L
o
PKG
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
o
Electrical Specifications T = 25 C, Unless Otherwise Specified
J
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
-
UNITS
V
Collector to Emitter Breakdown Voltage
Emitter to Collector Breakdown Voltage
Collector to Emitter Leakage Current
BV
BV
I
I
= 250µA, V
= 0V
600
-
CES
ECS
C
GE
= 10mA, V
= 0V
15
-
-
-
V
C
GE
o
I
V
= 600V
T = 25 C
J
-
250
2.0
2.7
2.0
7.0
±250
-
µA
mA
V
CES
CE
o
T = 125 C
J
-
-
o
Collector to Emitter Saturation Voltage
V
I
= 20A,
T = 25 C
J
-
-
1.8
1.6
5.5
-
CE(SAT)
C
V
= 15V
o
GE
T = 125 C
V
J
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
V
I
= 250µA, V
= 600V
4.5
-
V
GE(TH)
C CE
I
V
= ±20V
nA
A
GES
GE
o
SSOA
T = 150 C, R = 3Ω, V
= 15V
100
-
J
G
GE
L = 100µH, V = 600V
CE
Gate to Emitter Plateau Voltage
On-State Gate Charge
V
I
I
= 20A, V
= 20A,
= 300V
CE
-
-
-
-
-
-
-
-
-
-
8.6
142
182
15
-
V
GEP
C
Q
V
= 15V
162
nC
nC
ns
ns
ns
ns
µJ
µJ
µJ
g(ON)
C
GE
V
= 300V
CE
V
= 20V
o
210
GE
Current Turn-On Delay Time
Current Rise Time
t
IGBT and Diode at T = 25 C
-
d(ON)I
J
I
= 20A
CE
t
12
-
rI
V
V
R
= 390V
=15V
CE
Current Turn-Off Delay Time
Current Fall Time
t
73
-
-
d(OFF)I
GE
= 3Ω
G
t
32
fI
L = 500µH
Test Circuit (Figure 20)
Turn-On Energy (Note 3)
Turn-On Energy (Note 3)
Turn-Off Energy (Note 2)
E
E
E
105
280
150
-
ON1
ON2
OFF
350
200
©2006 Fairchild Semiconductor Corporation
HGT1S20N60A4S9A Rev. A
HGT1S20N60A4S9Aꢀ
o
Electrical Specifications T = 25 C, Unless Otherwise Specified (Continued)
J
PARAMETER
Current Turn-On Delay Time
Current Rise Time
SYMBOL
TEST CONDITIONS
MIN
TYP
15
MAX
21
UNITS
ns
o
t
IGBT and Diode at T = 125 C
-
-
-
-
-
-
-
-
d(ON)I
J
I
V
V
R
= 20A
CE
t
13
18
ns
rI
= 390V
= 15V
= 3Ω
CE
GE
Current Turn-Off Delay Time
Current Fall Time
t
105
55
135
73
ns
d(OFF)I
G
t
ns
fI
L = 500µH
Test Circuit (Figure 20)
Turn-On Energy (Note 3)
Turn-On Energy (Note 3)
Turn-Off Energy (Note 2)
Thermal Resistance Junction To Case
NOTES:
E
E
E
115
510
330
-
-
µJ
ON1
ON2
OFF
600
500
0.43
µJ
µJ
o
R
C/W
θJC
2. Turn-Off Energy Loss (E
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
OFF
at the point where the collector current equals zero (I
= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
CE
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
3. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E
is the turn-on loss of the IGBT only. E
ON1 ON2
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T as the IGBT. The diode type is specified in
J
Figure 20.
Typical Performance Curves Unless Otherwise Specified
100
120
V
= 15V
o
GE
DIE CAPABILITY
T
= 150 C, R = 3Ω, V = 15V, L = 100µH
G GE
J
80
60
40
20
0
100
80
60
40
20
0
PACKAGE LIMIT
25
50
75
100
125
150
0
100
200
300
400
500
600
700
o
T
, CASE TEMPERATURE ( C)
V
, COLLECTOR TO EMITTER VOLTAGE (V)
CE
C
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
500
14
12
10
8
450
400
350
300
250
200
150
100
o
T
V
V
= 390V, R = 3Ω, T = 125 C
G J
C
o
GE
15V
CE
75 C
300
I
SC
f
f
P
= 0.05 / (t
d(OFF)I
+ t
)
6
MAX1
MAX2
d(ON)I
+ E )
OFF
= (P - P ) / (E
100
40
D
C
ON2
= CONDUCTION DISSIPATION
4
C
t
SC
(DUTY FACTOR = 50%)
o
R
= 0.43 C/W, SEE NOTES
o
ØJC
2
T
= 125 C, R = 3Ω, L = 500µH, V
= 390V
J
G
CE
20
0
10
11
12
13
14
15
5
10
30
40
50
V
, GATE TO EMITTER VOLTAGE (V)
I
, COLLECTOR TO EMITTER CURRENT (A)
GE
CE
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
©2006 Fairchild Semiconductor Corporation
HGT1S20N60A4S9A Rev. A
HGT1S20N60A4S9Aꢀ
Typical Performance Curves Unless Otherwise Specified (Continued)
100
80
100
80
60
40
20
0
DUTY CYCLE < 0.5%, V
PULSE DURATION = 250µs
= 12V
GE
DUTY CYCLE < 0.5%, V
= 15V
PULSE DURATION = 250µs
GE
60
40
20
0
o
o
T
= 125 C
J
T
= 125 C
J
o
o
o
o
T
= 150 C
T = 25 C
J
T
= 25 C
J
T
= 150 C
J
J
0
0
0.4
V
0.8
1.2
1.6
2.0
2.4
2.8
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
V
, COLLECTOR TO EMITTER VOLTAGE (V)
, COLLECTOR TO EMITTER VOLTAGE (V)
CE
CE
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
1400
800
R
= 3Ω, L = 500µH, V
= 390V
CE
G
R
= 3Ω, L = 500µH, V
= 390V
CE
G
700
600
500
400
300
200
100
0
1200
1000
800
600
400
200
0
o
T
= 125 C, V
= 12V, V = 15V
GE
J
GE
o
T
= 125 C, V
= 12V OR 15V
J
GE
o
T
= 25 C, V
= 12V OR 15V
35 40
J
GE
30
o
T
= 25 C, V
= 12V, V = 15V
GE
J
GE
5
10
I
15
20
25
5
10
15
20
25
30
35
40
, COLLECTOR TO EMITTER CURRENT (A)
I
, COLLECTOR TO EMITTER CURRENT (A)
CE
CE
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
22
36
R
= 3Ω, L = 500µH, V
= 390V
CE
R
= 3Ω, L = 500µH, V = 390V
CE
G
G
32
28
24
20
16
12
8
20
18
16
14
12
10
8
o
o
T
= 25 C, T = 125 C, V
= 12V
GE
J
J
o
o
T
= 25 C, T = 125 C, V
= 12V
GE
J
J
o
o
T
= 25 C, T = 125 C, V
= 15V
35
J
J
GE
o
o
T
= 25 C OR T = 125 C, V
= 15V
J
J
GE
4
5
10
15
20
25
30
40
5
10
15
20
25
30
35
40
I
, COLLECTOR TO EMITTER CURRENT (A)
I
, COLLECTOR TO EMITTER CURRENT (A)
CE
CE
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
©2006 Fairchild Semiconductor Corporation
HGT1S20N60A4S9A Rev. A
HGT1S20N60A4S9Aꢀ
Typical Performance Curves Unless Otherwise Specified (Continued)
120
110
80
72
64
56
48
40
32
24
16
R
= 3Ω, L = 500µH,
R
= 3Ω, L = 500µH, V
= 390V
V
= 390V
G
G
CE
o
CE
o
V
= 12V, V
GE
= 15V, T = 125 C
J
GE
T
= 125 C, V
= 12V OR 15V
J
GE
100
90
80
70
60
o
= 25 C, V
T
= 12V OR 15V
GE
J
o
V
= 12V, V
GE
= 15V, T = 25 C
GE
J
5
10
15
20
25
30
35
40
5
10
15
20
25
30
35
40
I
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
CE
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
16
240
o
I
= 1mA, R = 15Ω, T = 25 C
G(REF)
L
J
DUTY CYCLE < 0.5%, V
= 10V
CE
PULSE DURATION = 250µs
14
12
10
8
200
V
= 600V
CE
V
= 400V
CE
160
120
80
40
0
o
T
= 25 C
J
V
= 200V
CE
6
o
T
= 125 C
J
4
o
T
= -55 C
J
2
0
6
7
8
9
10
11
12
0
20
40
60
80
100
120
140
160
V
, GATE TO EMITTER VOLTAGE (V)
Q , GATE CHARGE (nC)
G
GE
FIGURE 13. TRANSFER CHARACTERISTIC
FIGURE 14. GATE CHARGE WAVEFORMS
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
o
T
= 125 C, L = 500µH, V
= 390V, V = 15V
GE
R
= 3Ω, L = 500µH, V
= 390V, V = 15V
GE
J
CE
G
CE
E
= E
+ E
ON2 OFF
E
= E
ON2
+ E
TOTAL
TOTAL
OFF
10
I
= 30A
CE
I
= 30A
CE
1
I
I
= 20A
= 10A
CE
CE
I
I
= 20A
= 10A
CE
CE
0.1
10
100
, GATE RESISTANCE (Ω)
1000
3
25
50
75
100
125
150
R
o
G
T
, CASE TEMPERATURE ( C)
C
FIGURE 15. TOTAL SWITCHING LOSS vs CASE
TEMPERATURE
FIGURE 16. TOTAL SWITCHING LOSS vs GATE RESISTANCE
©2006 Fairchild Semiconductor Corporation
HGT1S20N60A4S9A Rev. A
HGT1S20N60A4S9Aꢀ
Typical Performance Curves Unless Otherwise Specified (Continued)
5
4
3
2
1
0
2.2
2.1
2.0
1.9
1.8
1.7
o
FREQUENCY = 1MHz
DUTY CYCLE < 0.5%, T = 25 C
J
PULSE DURATION = 250µs,
C
I
= 30A
= 20A
IES
CE
I
I
CE
CE
C
OES
= 10A
C
RES
0
20
40
60
80
100
8
9
10
V , GATE TO EMITTER VOLTAGE (V)
GE
11
12
13
14
15
16
V
, COLLECTOR TO EMITTER VOLTAGE (V)
CE
FIGURE 17. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
FIGURE 18. COLLECTOR TO EMITTER ON-STATE VOLTAGE
vs GATE TO EMITTER VOLTAGE
0
10
0.5
0.2
0.1
-1
10
10
t
1
0.05
P
D
0.02
0.01
t
2
DUTY FACTOR, D = t / t
PEAK T = (P X Z
1
2
X R
-2
) + T
J
D
θJC
θJC C
SINGLE PULSE
-5
-4
10
-3
-2
-1
0
10
10
10
10
10
t , RECTANGULAR PULSE DURATION (s)
1
FIGURE 19. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
Test Circuit and Waveforms
HGTG20N60A4D
DIODE TA49372
90%
OFF
10%
V
GE
E
ON2
L = 500µH
E
V
CE
R
= 3Ω
G
90%
DUT
+
10%
d(OFF)I
I
CE
V
= 390V
t
t
DD
rI
-
t
fI
t
d(ON)I
FIGURE 20. INDUCTIVE SWITCHING TEST CIRCUIT
FIGURE 21. SWITCHING TEST WAVEFORMS
©2006 Fairchild Semiconductor Corporation
HGT1S20N60A4S9A Rev. A
HGT1S20N60A4S9Aꢀ
Operating Frequency Information
Handling Precautions for IGBTs
Insulated Gate Bipolar Transistors are susceptible to
gate-insulation damage by the electrostatic discharge of
energy through the devices. When handling these devices,
care should be exercised to assure that the static charge
built in the handler’s body capacitance is not discharged
through the device. With proper handling and application
procedures, however, IGBTs are currently being extensively
used in production by numerous equipment manufacturers in
military, industrial and consumer applications, with virtually
no damage problems due to electrostatic discharge. IGBTs
can be handled safely if the following basic precautions are
taken:
Operating frequency information for a typical device
(Figure 3) is presented as a guide for estimating device
performance for a specific application. Other typical
frequency vs collector current (I ) plots are possible using
CE
the information shown for a typical unit in Figures 6, 7, 8, 9
and 11. The operating frequency plot (Figure 3) of a typical
device shows f
or f ; whichever is smaller at each
MAX1
MAX2
point. The information is based on measurements of a
typical device and is bounded by the maximum rated
junction temperature.
f
is defined by f
= 0.05/(t
MAX1
+ t ).
d(OFF)I d(ON)I
MAX1
Deadtime (the denominator) has been arbitrarily held to 10%
of the on-state time for a 50% duty factor. Other definitions
1. Prior to assembly into a circuit, all leads should be kept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as “ECCOSORBD™ LD26” or equivalent.
are possible. t
and t are defined in Figure 21.
d(OFF)I
d(ON)I
Device turn-off delay can establish an additional frequency
limiting condition for an application other than T
.
JM
+ E
2. When devices are removed by hand from their carriers,
the hand being used should be grounded by any suitable
means - for example, with a metallic wristband.
f
is defined by f
MAX2
= (P - P )/(E
OFF
). The
ON2
MAX2
D
C
allowable dissipation (P ) is defined by P = (T - T )/R
.
D
D
JM θJC
C
The sum of device switching and conduction losses must not
exceed P . A 50% duty factor was used (Figure 3) and the
3. Tips of soldering irons should be grounded.
D
4. Devices should never be inserted into or removed from
circuits with power on.
conduction losses (P ) are approximated by
C
P = (V x I )/2.
C
CE CE
5. Gate Voltage Rating - Never exceed the gate-voltage
E
and E are defined in the switching waveforms
OFF
rating of V
. Exceeding the rated V can result in
ON2
GEM
GE
permanent damage to the oxide layer in the gate region.
shown in Figure 21. E
is the integral of the
ON2
instantaneous power loss (I
x V ) during turn-on and
6. Gate Termination - The gates of these devices are
essentially capacitors. Circuits that leave the gate
open-circuited or floating should be avoided. These
conditions can result in turn-on of the device due to
voltage buildup on the input capacitor due to leakage
currents or pickup.
CE
CE
E
is the integral of the instantaneous power loss
OFF
(I
x V ) during turn-off. All tail losses are included in the
CE
CE
calculation for E
; i.e., the collector current equals zero
OFF
(I
= 0).
CE
7. Gate Protection - These devices do not have an internal
monolithic Zener diode from gate to emitter. If gate
protection is required an external Zener is recommended.
©2006 Fairchild Semiconductor Corporation
HGT1S20N60A4S9A Rev. A
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
®
ACEx™
FAST
ISOPLANAR™
LittleFET™
MICROCOUPLER™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
PowerEdge™
PowerSaver™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TCM™
ActiveArray™
Bottomless™
Build it Now™
CoolFET™
CROSSVOLT™
DOME™
FASTr™
FPS™
FRFET™
GlobalOptoisolator™
GTO™
®
PowerTrench
®
QFET
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
μSerDes™
ScalarPump™
SILENT SWITCHER
SMART START™
SPM™
®
HiSeC™
TinyLogic
2
EcoSPARK™
I C™
MSXPro™
OCX™
TINYOPTO™
TruTranslation™
UHC™
2
E CMOS™
i-Lo™
ImpliedDisconnect™
IntelliMAX™
EnSigna™
FACT™
FACT Quiet Series™
OCXPro™
OPTOLOGIC
®
UniFET™
®
®
OPTOPLANAR™
PACMAN™
POP™
UltraFET
Across the board. Around the world.™
VCX™
Wire™
®
The Power Franchise
Programmable Active Droop™
Power247™
Stealth™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE
SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS,
SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I19
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