FAN7383MX_WS [FAIRCHILD]

HB Based Peripheral Driver With Pwm;
FAN7383MX_WS
型号: FAN7383MX_WS
厂家: FAIRCHILD SEMICONDUCTOR    FAIRCHILD SEMICONDUCTOR
描述:

HB Based Peripheral Driver With Pwm

驱动 接口集成电路
文件: 总16页 (文件大小:1252K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
February 2007  
FAN7383  
Half-Bridge Gate-Drive IC  
Features  
Description  
„ Floating Channel Designed for Bootstrap Operation to  
The FAN7383 is a half-bridge gate-drive IC with  
shutdown and programmable dead-time control  
functions for driving MOSFETs and IGBTs that operate  
up to +600V.  
+600V.  
„ Typically 350mA/650mA Sourcing/Sinking Current  
Driving Capability for Both Channels  
„ Extended Allowable Negative VS Swing to -9.8V for  
Fairchild’s high voltage process and common-mode  
noise canceling technique give stable operation of high-  
side drivers under high-dv/dt noise circumstances.  
Signal Propagation at VDD=VBS=15V  
„ High-Side Output in Phase of IN Signal  
„ Built-in UVLO Functions for Both Channels  
„ Built-in Common-Mode dv/dt Noise Canceling Circuit  
„ Typically Internal 330ns Minimum Dead-Time  
An advanced level-shift circuit allows high-side gate  
driver operation up to VS= -9.8V (typical) for VBS=15V.  
The UVLO circuits for both channels prevent malfunction  
when VDD and VBS are lower than the specified  
„ Programmable Turn-On Delay Time Control  
(Dead-Time)  
threshold voltage.  
Output drivers typically source/sink 350mA/650mA,  
respectively, which is suitable for all kinds of half and full  
bridge inverter.  
Applications  
„ SMPS  
„ Motor Drive Inverter  
„ Fluorescent Lamp Ballast  
„ HID Ballast  
14-SOP  
Ordering Information  
Part Number  
FAN7383M(1)  
FAN7383MX(1)  
Package  
Pb-Free  
Operating Temperature Range Packing Method  
Tube  
-40°C ~ 125°C  
14-SOP  
Yes  
Tape & Reel  
Note:  
1. These devices passed wave soldering test by JESD22A-111.  
© 2006 Fairchild Semiconductor Corporation  
FAN7383 Rev. 1.0.3  
www.fairchildsemi.com  
Typical Application Circuit  
VDC  
RBOOT  
DBOOT  
VDD  
PWM  
IN  
1
2
3
4
5
6
7
14  
13  
12  
11  
10  
9
VB  
PWM IC  
RHON  
Shutdown  
Control  
SD  
DT  
HO1  
RHOFF  
HO2  
VS  
CBOOT  
VDD  
LO1  
LO2  
GND  
NC  
RDT  
NC  
NC  
8
RLOFF  
RLON  
FAN7383 Rev.01  
Figure 1. Application Circuit for Half-Bridge Switching Power Supply  
VDC  
VCC  
VDD  
VDD  
VB  
VB  
HO1  
HO1  
HO2  
VS  
HO2  
VS  
IN  
PHA  
PHB  
SD  
Forward  
IN  
SD  
M
SD  
FAN7383  
FAN7383  
Reverse  
DC Motor  
Controller  
LO1  
LO2  
LO1  
LO2  
DT  
DT  
GND  
GND  
FAN7383 Rev.01  
Figure 2. Application Circuit for Full-Bridge DC Motor Driver  
© 2006 Fairchild Semiconductor Corporation  
FAN7383 Rev. 1.0.3  
www.fairchildsemi.com  
2
Internal Block Diagram  
14 VB  
UVLO  
R
13 HO1  
12 HO2  
R
NOISE  
CANCELLER  
S
Q
11 VS  
SCHMITT  
TRIGGER INPUT  
HS(ON/OFF)  
1
2
3
IN  
UVLO  
4
VDD  
SHOOT THOUGH  
PREVENTION  
SD  
DT  
LO1  
LO2  
5
6
LS(ON/OFF)  
DELAY  
DEAD-TIME  
{ DTMIN=330nsec }  
7
GND  
FAN7383 Rev:01  
Figure 3. Functional Block Diagram of FAN7383  
© 2006 Fairchild Semiconductor Corporation  
FAN7383 Rev. 1.0.3  
www.fairchildsemi.com  
3
Pin Configuration  
IN  
SD  
DT  
1
2
3
4
5
6
7
14 VB  
13 HO1  
12 HO2  
11 VS  
VDD  
10 NC  
LO1  
LO2  
GND  
9
8
NC  
NC  
FAN7383 Rev:00  
Figure 4. Pin Configuration (Top View)  
Pin Definitions  
Pin #  
1
Name  
Description  
IN  
SD  
Logic Input for Gate Driver  
Logic Input for Shutdown (Active Low)  
Programmable Dead-Time Control with External Resistor  
Low-Side Supply Voltage  
Low-Side Driver Source Output  
Low-Side Driver Sink Output  
Ground  
2
3
DT  
4
VDD  
LO1  
LO2  
GND  
N.C.  
N.C.  
N.C.  
VS  
5
6
7
8
Not connected  
9
Not connected  
10  
11  
12  
13  
14  
Not connected  
High-Side Floating Supply Return  
High-Side Driver Sink Output  
High-Side Driver Source Output  
High-Side Floating Supply  
HO2  
HO1  
VB  
© 2006 Fairchild Semiconductor Corporation  
FAN7383 Rev. 1.0.3  
www.fairchildsemi.com  
4
Absolute Maximum Ratings  
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be  
operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In  
addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.  
The absolute maximum ratings are stress ratings only. TA = 25°C unless otherwise specified.  
Symbol  
VS  
Parameter  
High-side offset voltage  
Min.  
VB-25  
-0.3  
Max.  
VB+0.3  
625  
Unit  
V
VB  
High-side floating supply voltage  
High-side floating output voltage HO1, HO2  
Low-side and logic fixed supply voltage  
Low-side output voltage LO1, LO2  
Logic input voltage (IN)  
V
VHO  
VDD  
VLO  
VS-0.3  
-0.3  
VB+0.3  
25  
V
V
-0.3  
VDD+0.3  
VDD+0.3  
VDD+0.3  
5.0  
V
VIN  
-0.3  
V
VSD  
Shutdown logic input voltage  
Dead-time control voltage  
-0.3  
V
VDT  
-0.3  
V
GND  
dVS/dt  
Logic ground  
VDD-25  
VDD+0.3  
50  
V
Allowable offset voltage slew rate  
Power dissipation  
V/ns  
W
(2)(3)(4)  
PD  
1.0  
θJA  
TJ  
Thermal resistance, junction-to-ambient  
Junction temperature  
110  
°C/W  
°C  
°C  
150  
TSTG  
Storage temperature  
150  
Notes:  
2. When mounted on 76.2 x 114.3 x 1.6mm PCB. (FR-4 glass epoxy material).  
3. Please refer to:  
JESD51-2: Integral circuits thermal test method environmental conditions - Natural convection  
JESD51-3: Low effective thermal conductivity test board for leaded surface mount packages  
4. Do not exceed PD under any circumstances.  
Recommended Operating Conditions  
The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended  
operating conditions are specified to ensure optimal performance to the datasheet specifications. Fairchild does not  
recommend exceeding them or designing to Absolute Maximum Ratings.  
Symbol  
VB  
Parameter  
High-side floating supply voltage  
High-side floating supply offset voltage  
Low-side supply voltage  
Condition  
Min.  
VS+15  
6-VDD  
15  
Max.  
VS+20  
600  
Unit  
V
VS  
V
VDD  
VHO  
VLO  
VIN  
20  
V
High-side (HO) output voltage  
Low-side (LO) output voltage  
Logic input voltage (IN)  
VS  
VB  
V
GND  
GND  
-40  
VDD  
VDD  
125  
V
V
TA  
Ambient temperature  
°C  
© 2006 Fairchild Semiconductor Corporation  
FAN7383 Rev. 1.0.3  
www.fairchildsemi.com  
5
Electrical Characteristics  
VBIAS (VDD, VBS) = 15.0V, RDT = GND, TA = 25°C, unless otherwise specified. The VIN and IIN parameters are  
referenced to GND. The VO and IO parameters are referenced to VS and GND and are applicable to the respective  
outputs HO and LO.  
Symbol  
SUPPLY CURRENT SECTION  
IQBS Quiescent VBS supply current  
IQDD  
Parameter  
Condition  
Min. Typ. Max. Unit  
VIN=0V or 5V  
35  
90  
Quiescent VDD supply current  
VDD supply current at shutdown mode  
Operating VBS supply current  
Operating VDD supply current  
Offset supply leakage current  
VIN=0V or 5V, RDT=0Ω  
SD=GND  
650  
650  
400  
900  
900  
700  
(5)  
ISD  
μA  
IPBS  
IPDD  
ILK  
fIN=20kHz,rms value  
fIN=20kHz,rms value, RDT=0Ω  
VB=VS=600V  
950 1200  
10  
POWER SUPPLY SECTION  
VDDUV+ VDD and VBS supply under-voltage  
VBSUV+ positive going threshold  
10.7 11.6 12.5  
10.0 10.8 11.6  
0.8  
VDDUV- VDD and VBS supply under-voltage  
VBSUV- negative going threshold  
V
VDDUVH VDD and VBS supply under-voltage  
VBSUVH lockout hysteresis  
GATE DRIVER OUTPUT SECTION  
VOH  
VOL  
IO+  
High-level output voltage, VBIAS-VO  
Low-level output voltage, VO  
IO=20mA  
1.0  
0.6  
V
V
Output high short-circuit pulse current  
Output low short-circuit pulsed current  
VO=0V, VIN=5V with PW<10µs  
VO=15V, VIN=0V with PW<10µs  
250  
500  
350  
650  
mA  
mA  
IO-  
Allowable negative VS pin voltage for IN  
signal propagation to HO  
VS  
-9.8 -7.0  
V
LOGIC INPUT SECTION (INPUT AND SHUTDOWN)  
VIH  
VIL  
Logic "1" input voltage  
2.9  
2.9  
V
V
Logic "0" input voltage  
1.2  
IIN+  
IIN-  
Logic "1" input bias current  
Logic "0" input bias current  
Shutdown "1" input voltage  
Shutdown "0" input voltage  
Input pull-down resistance  
VIN=5V  
VIN=0V  
50  
100  
2.0  
1.2  
μA  
μA  
V
SD+  
SD-  
RPD  
V
100  
KΩ  
Note:  
5.This parameter guaranteed by design.  
© 2006 Fairchild Semiconductor Corporation  
FAN7383 Rev. 1.0.3  
www.fairchildsemi.com  
6
Dynamic Electrical Characteristics  
VBIAS (VDD, VBS) = 15.0V, VS = GND, CL=1000pF, RDT = GND, and TA = 25°C, unless otherwise specified.  
Symbol  
Parameter  
Turn-on propagation delay  
Turn-off propagation delay  
Turn-on rise time  
Conditions  
Min. Typ. Max. Unit  
tON  
tOFF  
tR  
VS=0V  
500  
170  
50  
670  
250  
100  
80  
VS=0V or 600V(5)  
ns  
tF  
Turn-off fall time  
30  
(5)  
tSD  
Shutdown propagation delay  
100  
330  
180  
420  
RDT=0Ω  
250  
ns  
µs  
DT1,  
DT2  
Dead-time LO OFF to HO ON and HO  
OFF to LO ON  
RDT=200KΩ  
RDT=0Ω  
1.20 1.68 2.30  
0
0
60  
DMT  
Dead-time matching  
ns  
RDT=200KΩ  
150  
Note:  
5.These parameters guaranteed by design.  
© 2006 Fairchild Semiconductor Corporation  
FAN7383 Rev. 1.0.3  
www.fairchildsemi.com  
7
Typical Characteristics  
11.6  
11.4  
11.2  
11.0  
10.8  
10.6  
10.4  
10.2  
10.0  
12.0  
11.8  
11.6  
11.4  
11.2  
11.0  
10.8  
-40  
-20  
0
20  
40  
60  
80  
100  
120  
-40  
-20  
0
20  
40  
60  
80  
100  
120  
Temperature [°C]  
Temperature [°C]  
Figure 5. VDD/VBS UVLO (+) vs. Temperature  
Figure 6. VDD/VBS UVLO (-) vs. Temperature  
1000  
800  
600  
400  
200  
100  
80  
60  
40  
20  
0
-40  
-20  
0
20  
40  
60  
80  
100  
120  
-40  
-20  
0
20  
40  
60  
80  
100  
120  
Temperature [°C]  
Temperature [°C]  
Figure 7. VDD Quiescent Current vs. Temperature  
Figure 8. VBS Quiescent Current vs. Temperature  
1600  
1400  
1200  
1000  
800  
800  
600  
400  
200  
0
600  
400  
-40  
-20  
0
20  
40  
60  
80  
100  
120  
-40  
-20  
0
20  
40  
60  
80  
100  
120  
Temperature [°C]  
Temperature [°C]  
Figure 9. VDD Operating Current vs. Temperature  
Figure 10. VBS Operating Current vs. Temperature  
© 2006 Fairchild Semiconductor Corporation  
FAN7383 Rev. 1.0.3  
www.fairchildsemi.com  
8
Typical Characteristics (Continued)  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
100  
80  
60  
40  
20  
0
-40  
-20  
0
20  
40  
60  
80  
100  
120  
-40  
-20  
0
20  
40  
60  
80  
100  
120  
Temperature [°C]  
Temperature [°C]  
Figure 11. Logic Input Current vs. Temperature  
Figure 12. Logic Input High Voltage vs. Temperature  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
-40  
-20  
0
20  
40  
60  
80  
100  
120  
-40  
-20  
0
20  
40  
60  
80  
100  
120  
Temperature [°C]  
Temperature [°C]  
Figure 13. Logic Input Low Voltage vs. Temperature  
Figure 14. SD Positive Threshold vs. Temperature  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
100  
80  
60  
40  
20  
0
-40  
-20  
0
20  
40  
60  
80  
100  
120  
-40  
-20  
0
20  
40  
60  
80  
100  
120  
Temperature [°C]  
Temperature [°C]  
Figure 15. SD Negative Threshold vs. Temperature  
Figure 16. Rising Time vs. Temperature  
© 2006 Fairchild Semiconductor Corporation  
FAN7383 Rev. 1.0.3  
www.fairchildsemi.com  
9
Typical Characteristics (Continued)  
700  
600  
500  
400  
300  
200  
80  
60  
40  
20  
0
-40  
-20  
0
20  
40  
60  
80  
100  
120  
-40  
-20  
0
20  
40  
60  
80  
100  
120  
Temperature [°C]  
Temperature [°C]  
Figure 17. Falling Time vs. Temperature  
Figure 18. Turn-on Delay Time vs. Temperature  
300  
250  
200  
150  
100  
50  
400  
360  
320  
280  
240  
0
-40  
-20  
0
20  
40  
60  
80  
100  
120  
-40  
-20  
0
20  
40  
60  
80  
100  
120  
Temperature [°C]  
Temperature [°C]  
Figure 19. Turn-off Falling Time vs. Temperature  
Figure 20. Dead-Time (RDT=0kΩ) vs. Temperature  
2.0  
1.6  
1.2  
0.8  
0.4  
0.0  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
0
20  
40  
60  
80 100 120 140 160 180 200  
RDT [kohm]  
-40  
-20  
0
20  
40  
60  
80  
100  
120  
Temperature [°C]  
Figure 21. Dead Time (RDT=200kΩ) vs. Temperature  
Figure 22. RDT vs. Dead Time  
© 2006 Fairchild Semiconductor Corporation  
FAN7383 Rev. 1.0.3  
www.fairchildsemi.com  
10  
Typical Characteristics (Continued)  
-6  
-8  
-10  
-12  
-14  
-40  
-20  
0
20  
40  
60  
80  
100  
120  
Temperature [°C]  
Figure 23. Allowable Negative VS Voltage for Signal  
Propagation to High Side vs. Temperature  
© 2006 Fairchild Semiconductor Corporation  
FAN7383 Rev. 1.0.3  
www.fairchildsemi.com  
11  
Switching Time Definitions  
10μF 100nF  
+15V  
FAN7383  
10μF 100nF  
+15V  
IN  
1
2
3
4
5
6
7
14  
13  
12  
11  
10  
9
VB  
SD  
DT  
HO1  
HO1, 2  
HO2  
VS  
SD  
1nF  
VDD  
LO1  
LO2  
GND  
NC  
NC  
NC  
LO1, 2  
1nF  
8
FAN7383 Rev:00  
Figure 24. Switching Time Test Circuit  
IN  
HO1, 2  
LO1, 2  
SD  
Shutdown  
Shutdown  
DT2  
DT1  
DT2  
DT1  
DT1  
FAN7383 Rev:00  
Figure 25. Input / Output Waveforms  
50%  
50%  
IN  
tOFF  
90%  
tON  
LO1, 2  
HO1, 2  
10%  
90%  
tON  
tOFF  
10%  
FAN7383 Rev:00  
Figure 26. Switching Time Waveform Definitions  
© 2006 Fairchild Semiconductor Corporation  
FAN7383 Rev. 1.0.3  
www.fairchildsemi.com  
12  
50%  
SD  
90%  
HO or LO  
tSD  
FAN7383 Rev:00  
Figure 27. Shutdown Waveform Definition  
90%  
HO  
LO  
10%  
DT1  
DT2  
90%  
MDT= DT1-DT2  
10%  
FAN7383 Rev:00  
Figure 28. Dead-Time Waveform Definition  
© 2006 Fairchild Semiconductor Corporation  
FAN7383 Rev. 1.0.3  
www.fairchildsemi.com  
13  
Typical Application Information  
1. Normal Operating Consideration  
3. Layout Consideration  
The FAN7383 is a single PWM input half-bridge gate-  
drive IC with programmable dead-time and shutdown  
function.  
For optimum performance of high- and low-side gate  
drivers, cannot be achieved without taking due  
considerations must be taken during printed circuit board  
(PCB) layout.  
The dead-time is set with a resistor (RDT) at the DT pin.  
The wide dead-time programming range provides the  
flexibility to optimize drive signal timing for a selection of  
switching devices (MOSFET or IGBT) and applications.  
3.1 Supply Capacitors  
If the output stages are able to quickly turn on the  
switching device with high value of current, the supply  
capacitors must be placed as close as possible to the  
device pins (VDD and GND for the ground-tied supply, VB  
The turn-on time delay circuitry (Dead-Time)  
accommodates resistor values from 0Ω to 200kΩ with a  
dead-time proportional to the RDT resistance.  
and VS for the floating supply) to minimize parasitic  
inductance and resistance.  
Grounding the DT pin programs the FAN7383 to drive  
both outputs with minimum dead time.  
3.2 Gate Drive Loop  
If the SD pin voltage decrease below 1.2V in normal  
operation, the IC enters the shutdown mode.  
Current loops behave like an antenna, able to receive  
and transmit noise. To reduce the noise coupling/  
emission and improve the power switch turn-on and off  
performances, gate drive loops must be reduced as  
much as possible.  
2. Under-Voltage Lockout (UVLO)  
The FAN7383 has an under-voltage lockout (UVLO)  
protection circuitry for high and low side channels to  
prevent malfunction when VDD or VBS is lower than the  
3.3 Ground Plane  
specified threshold voltage. The UVLO circuitry monitors  
the supply voltage (VDD) and bootstrap capacitor voltage  
Ground plane must not be placed under or nearby the  
high-voltage floating side to minimize noise coupling.  
(VBS) independently.  
© 2006 Fairchild Semiconductor Corporation  
FAN7383 Rev. 1.0.3  
www.fairchildsemi.com  
14  
Package Dimensions  
14-SOP  
Dimensions are in millimeters unless otherwise noted.  
0.05  
0.002  
MIN  
1.55 0.10  
0.061 0.004  
#14  
#1  
#8  
#7  
6.00 0.30  
0.236 0.012  
1.80  
MAX  
0.071  
3.95 0.20  
0.156 0.008  
5.72  
0.225  
0.60 0.20  
0.024 0.008  
January 2001, Rev. A  
Figure 29. 14-Lead Small Outline Package (SOP)  
© 2006 Fairchild Semiconductor Corporation  
FAN7383 Rev. 1.0.3  
www.fairchildsemi.com  
15  
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APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER  
ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S  
WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.  
LIFE SUPPORT POLICY  
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR  
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.  
As used herein:  
1. Life support devices or systems are devices or systems 2. A critical component in any component of a life support,  
which, (a) are intended for surgical implant into the body or  
(b) support or sustain life, and (c) whose failure to perform  
when properly used in accordance with instructions for use  
provided in the labeling, can be reasonably expected to  
result in a significant injury of the user.  
device, or system whose failure to perform can be  
reasonably expected to cause the failure of the life support  
device or system, or to affect its safety or effectiveness.  
PRODUCT STATUS DEFINITIONS  
Definition of Terms  
Datasheet Identification  
Product Status  
Definition  
Advance Information  
Formative or In Design  
This datasheet contains the design specifications for product  
development. Specifications may change in any manner without notice.  
Preliminary  
First Production  
Full Production  
Not In Production  
This datasheet contains preliminary data; supplementary data will be  
published at a later date. Fairchild Semiconductor reserves the right to  
make changes at any time without notice to improve design.  
No Identification Needed  
Obsolete  
This datasheet contains final specifications. Fairchild Semiconductor  
reserves the right to make changes at any time without notice to improve  
design.  
This datasheet contains specifications on a product that has been  
discontinued by Fairchild Semiconductor. The datasheet is printed for  
reference information only.  
Rev. I23  
© 2006 Fairchild Semiconductor Corporation  
FAN7383 Rev. 1.0.3  
www.fairchildsemi.com  
16  

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