概述
规格参数
数据手册FCP13N60N 概述
N-Channel MOSFET 600V, 13A, 0.258Ω N沟道MOSFET 600V ， 13A ， 0.258Ω 功率场效应晶体管
FCP13N60N 规格参数
| 是否无铅： | 不含铅 | 是否Rohs认证： | 符合 |
| 生命周期： | Transferred | 零件包装代码： | TO-220 |
| 包装说明： | FLANGE MOUNT, R-PSFM-T3 | 针数： | 3 |
| Reach Compliance Code： | compliant | ECCN代码： | EAR99 |
| HTS代码： | 8541.29.00.95 | 风险等级： | 5.69 |
| 雪崩能效等级（Eas）： | 235 mJ | 配置： | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压： | 600 V | 最大漏极电流 (Abs) (ID)： | 13 A |
| 最大漏极电流 (ID)： | 13 A | 最大漏源导通电阻： | 0.258 Ω |
| FET 技术： | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码： | TO-220AB |
| JESD-30 代码： | R-PSFM-T3 | JESD-609代码： | e3 |
| 元件数量： | 1 | 端子数量： | 3 |
| 工作模式： | ENHANCEMENT MODE | 最高工作温度： | 150 °C |
| 封装主体材料： | PLASTIC/EPOXY | 封装形状： | RECTANGULAR |
| 封装形式： | FLANGE MOUNT | 峰值回流温度（摄氏度）： | NOT SPECIFIED |
| 极性/信道类型： | N-CHANNEL | 最大功率耗散 (Abs)： | 116 W |
| 最大脉冲漏极电流 (IDM)： | 39 A | 认证状态： | Not Qualified |
| 子类别： | FET General Purpose Power | 表面贴装： | NO |
| 端子面层： | Matte Tin (Sn) | 端子形式： | THROUGH-HOLE |
| 端子位置： | SINGLE | 处于峰值回流温度下的最长时间： | NOT SPECIFIED |
| 晶体管应用： | SWITCHING | 晶体管元件材料： | SILICON |
| Base Number Matches： | 1 |
FCP13N60N 数据手册
通过下载FCP13N60N数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载August 2009
TM
SupreMOS
FCP13N60N / FCPF13N60NT
N-Channel MOSFET
600V, 13A, 0.258Ω
Features
Description
•
•
•
•
•
RDS(on) = 0.244Ω ( Typ.) @ VGS = 10V, ID = 6.5A
Ultra Low Gate Charge ( Typ.Qg = 30.4nC)
Low Effective Output Capacitance
100% Avalanche Tested
The SupreMOS MOSFET, Fairchild’s next generation of high
voltage super-junction MOSFETs, employs a deep trench filling
process that differentiates it from preceding multi-epi based
technologies. By utilizing this advanced technology and precise
process control, SupreMOS provides world class Rsp, superior
switching performance and ruggedness.
This SupreMOS MOSFET fits the industry’s AC-DC SMPS
requirements for PFC, server/telecom power, FPD TV power, ATX
power, and industrial power applications.
RoHS Compliant
D
G
TO-220
FCP Series
TO-220F
FCPF Series
G D S
G D S
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
Symbol
VDSS
VGSS
Parameter
FCP13N60N FCPF13N60NT
Units
Drain to Source Voltage
Gate to Source Voltage
600
±30
V
V
-Continuous (TC = 25oC)
-Continuous (TC = 100oC)
- Pulsed
13
8.2
39
13*
8.2*
39
ID
Drain Current
A
IDM
EAS
IAR
Drain Current
(Note 1)
(Note 2)
A
mJ
Single Pulsed Avalanche Energy
Avalanche Current
235
4.3
A
EAR
Repetitive Avalanche Energy
MOSFET dv/dt Ruggedness
Peak Diode Recovery dv/dt
1.16
100
20
mJ
V/ns
V/ns
W
W/oC
oC
dv/dt
PD
(Note 3)
(TC = 25oC)
- Derate above 25oC
116
33.8
0.27
Power Dissipation
0.93
TJ, TSTG
TL
Operating and Storage Temperature Range
-55 to +150
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
300
oC
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
Parameter
Thermal Resistance, Junction to Case
FCP13N60N FCPF13N60NT Units
RθJC
RθCS
RθJA
1.07
0.5
3.7
0.5
Thermal Resistance, Case to Heak Sink ( Typical)
Thermal Resistance, Junction to Ambient
oC/W
62.5
62.5
©2009 Fairchild Semiconductor Corporation
FCP13N60N / FCPF13N60NT Rev. A
1
www.fairchildsemi.com
Package Marking and Ordering Information
Device Marking
FCP13N60N
Device
Package
TO-220
Reel Size
Tape Width
Quantity
FCP13N60N
FCPF13N60NT
-
-
-
-
50
50
FCPF13N60NT
TO-220F
Electrical Characteristics TC = 25oC unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 1mA, VGS = 0V, TC = 25oC
600
-
-
-
V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
I
D = 1mA, Referenced to 25oC
-
-
0.73
V/oC
V
DS = 480V, VGS = 0V
-
-
-
10
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
μA
VDS = 480V, VGS = 0V, TC = 125oC
-
-
100
VGS = ±30V, VDS = 0V
±100
nA
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
VGS = VDS, ID = 250μA
VGS = 10V, ID = 6.5A
VDS = 40V, ID = 6.5A
2.0
-
4.0
0.258
-
V
Ω
S
Static Drain to Source On Resistance
Forward Transconductance
-
-
0.244
16.3
Dynamic Characteristics
Ciss
Input Capacitance
-
-
-
-
-
-
-
-
-
1325
50
1765
pF
pF
pF
pF
pF
nC
nC
nC
Ω
VDS = 100V, VGS = 0V
f = 1MHz
Coss
Crss
Output Capacitance
65
Reverse Transfer Capacitance
Output Capacitance
3
5
Coss
Cosseff
Qg(tot)
Qgs
VDS = 380V, VGS = 0V, f = 1MHz
VDS = 0V to 480V, VGS = 0V
30
-
Effective Output Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance (G-S)
145
30.4
6.0
9.5
2.8
-
39.5
V
V
DS = 380V,ID = 6.5A
GS = 10V
-
-
-
(Note 4)
Qgd
ESR
Drain Open
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
-
-
-
-
14.5
10.6
45
39
ns
ns
ns
ns
VDD = 380V, ID = 6.5A
31.2
100
29.6
R
G = 4.7Ω
9.8
(Note 4)
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
-
-
-
-
-
-
-
13
39
1.2
-
A
A
ISM
VSD
trr
Drain to Source Diode Forward Voltage
Reverse Recovery Time
VGS = 0V, ISD = 6.5A
-
V
287
3.5
ns
μC
V
GS = 0V, ISD = 6.5A
dIF/dt = 100A/μs
Qrr
Reverse Recovery Charge
-
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. I = 4.3A, R = 25Ω, Starting T = 25°C
AS
G
J
3. I ≤ 13A, di/dt ≤ 200A/μs, V ≤ BV
, Starting T = 25°C
J
SD
DD
DSS
4. Essentially Independent of Operating Temperature Typical Characteristics
www.fairchildsemi.com
FCP13N60N / FCPF13N60NT Rev. A
2
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
60
40
VGS = 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
10
-55oC
150oC
10
25oC
1
*Notes:
1. 250μs Pulse Test
2. TC = 25oC
*Notes:
1. VDS = 20V
2. 250μs Pulse Test
0.2
3
0.6
2
4
6
8
1
10
20
VGS, Gate-Source Voltage[V]
VDS, Drain-Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
100
0.8
0.6
150oC
25oC
10
0.4
VGS = 10V
VGS = 20V
0.2
*Notes:
1. VGS = 0V
*Notes: TC = 25oC
30 40
2. 250μs Pulse Test
1
0.4
0.0
0.8
1.2
1.6
0
10
20
VSD, Body Diode Forward Voltage [V]
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
10
50000
C
C
C
= C + C (C = shorted)
gs gd ds
iss
VDS = 120V
VDS = 380V
= C + C
ds gd
oss
rss
10000
= C
gd
8
6
4
2
0
VDS = 480V
Ciss
1000
100
10
Coss
*Notes:
1. VGS = 0V
Crss
*Notes: ID = 6.5A
30
2. f = 1MHz
1
0.1
0
10
20
40
1
10
100
600
Qg, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
www.fairchildsemi.com
FCP13N60N / FCPF13N60NT Rev. A
3
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
1.2
1.1
1.0
2.5
2.0
1.5
1.0
0.9
*Notes:
1. VGS = 0V
*Notes:
1. VGS = 10V
0.5
2. ID = 1mA
2. ID = 6.5A
0.0
-100
0.8
-100
-50
0
50
100
150
200
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
Figure 9. Maximum Safe Operating Area
_ FCP13N60N
Figure 10. Maximum Safe Operating Area
_ FCPF13N60NT
100
100
10μs
10μs
100μs
10
1
100μs
10
1ms
1ms
10ms
10ms
1
DC
Operation in This Area
is Limited by R DS(on)
Operation in This Area
is Limited by R DS(on)
DC
*Notes:
1. TC = 25oC
2. TJ = 150oC
0.1
*Notes:
0.1
1. TC = 25oC
2. TJ = 150oC
3. Single Pulse
3. Single Pulse
0.01
0.01
0.1
1
10
100
1000
0.1
1
10
100
1000
VDS, Drain-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 11. Maximum Drain Current
vs. Case Temperature
15
12
9
6
3
0
25
50
75
100
125
150
TC, Case Temperature [oC]
www.fairchildsemi.com
FCP13N60N / FCPF13N60NT Rev. A
4
Typical Performance Characteristics (Continued)
Figure 12. Transient Thermal Response Curve_ FCP13N60N
2
1
0.5
0.2
0.1
PDM
0.1
t1
*Notes:
0.05
t2
0.02
0.01
1. ZθJC(t) = 1.07oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
Single pulse
0.01
10-5
10-4
10-3
Rectangular Pulse Duration [sec]
10-2
10-1
_ FCPF13N60NT
Figure 13. Transient Thermal Response Curve
5
0.5
1
0.2
0.1
PDM
0.05
t1
t2
0.1
0.02
*Notes:
0.01
1. ZθJC(t) = 3.7oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
Single pulse
0.01
10-5
10-4
10-3
10-2
10-1
100
101
102
Rectangular Pulse Duration [sec]
www.fairchildsemi.com
FCP13N60N / FCPF13N60NT Rev. A
5
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
www.fairchildsemi.com
FCP13N60N / FCPF13N60NT Rev. A
6
Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
D
U
T
V
D
S
_
I
S
D
L
D
r i v
e
r
R
G
S
a
m
e
T
y
p
e
V
a
s
D
U
T
D
D
V
G
S
•
d
v
/ d
c
t
c
o
n
t r o l l e
d
b
y
R
G
•
I S
o
n
t r o l l e
d
b
y
p
u
l s
e
p
e
r i o
d
D
G
a
t e
P
u
l s
e
W
i d t h
V
- - - - - - - - - - - - - - - - - - - - - - - - - -
D
=
G
S
G
a
t e
P
u
l s
e
P
e
r i o
d
1
0
V
(
D
r i v
e
r
)
I F
,
B
o
d
y
D
i o
d
e
F
o
r w
a
r d
C
u
r r e
n
t
M
I
S
D
d
i / d
t
(
D
U
T
)
I R
d
M
B
o
d
y
D
e
i o
R
e
R
e
v
e
r s
d
e
C
u
r r e
n
t
V
D
S
(
D
U
T
)
B
o
d
y
S
D
i o
d
e
c
o
v
e
r y
v
/ d
t
V
V
D
D
D
B
o
d
y
D
i o
d
e
F
o
r w
a
r d
V
o
l t a
e
D
r o
www.fairchildsemi.com
FCP13N60N / FCPF13N60NT Rev. A
7
Mechanical Dimensions
TO-220
Dimensions in Millimeters
www.fairchildsemi.com
FCP13N60N / FCPF13N60NT Rev. A
8
Mechanical Dimensions
TO-220F
Dimensions in Millimeters
www.fairchildsemi.com
FCP13N60N / FCPF13N60NT Rev. A
9
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intended to be an exhaustive list of all such trademarks.
®
®
AccuPower™
Auto-SPM™
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F-PFS™
FRFET
Global Power Resource
Green FPS™
PowerTrench
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The Power Franchise
®
®
Programmable Active Droop™
SM
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QFET
TinyBoost™
TinyBuck™
TinyCalc™
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Green FPS™ e-Series™
Gmax™
Quiet Series™
RapidConfigure™
®
TinyLogic
Current Transfer Logic™
EcoSPARK
EfficentMax™
GTO™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
®
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
TriFault Detect™
TRUECURRENT™*
™
Saving our world, 1mW /W /kW at a time™
SmartMax™
EZSWITCH™*
™*
SMART START™
®
SPM
MicroPak™
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS™
SyncFET™
Sync-Lock™
®*
®
MillerDrive™
MotionMax™
Motion-SPM™
®
Fairchild
®
®
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FACT Quiet Series™
UHC
®
OPTOLOGIC
Ultra FRFET™
UniFET™
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VisualMax™
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®
®
FACT
OPTOPLANAR
®
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FAST
FastvCore™
tm
FETBench™
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®
FlashWriter
*
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Advance Information
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
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First Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
No Identification Needed
Obsolete
Full Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I41
www.fairchildsemi.com
FCP13N60N / FCPF13N60NT Rev. A
10
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| FCP150N65F | ONSEMI | 功率 MOSFET，N 沟道，SUPERFET® II，FRFET®，650V，24A，150mΩ，TO-220 | 获取价格 |
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| FCP165N65S3 | ONSEMI | 功率 MOSFET，N 沟道，SUPERFET® III，Easy Drive，650 V，19 A，165 mΩ，TO-220 | 获取价格 |
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