FCP165N60E [ONSEMI]

N 沟道 SuperFET® II Easy-Drive MOSFET;
FCP165N60E
型号: FCP165N60E
厂家: ONSEMI    ONSEMI
描述:

N 沟道 SuperFET® II Easy-Drive MOSFET

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December 2015  
FCP165N60E  
N-Channel SuperFET II Easy-Drive MOSFET  
®
600 V, 23 A, 165 mΩ  
Features  
Description  
650 V @TJ = 150°C  
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new  
high voltage super-junction (SJ) MOSFET family that is utilizing  
charge balance technology for outstanding low on-resistance  
and lower gate charge performance. This technology is tailored  
to minimize conduction loss, provide superior switching  
performance, dv/dt rate and higher avalanche energy.  
Consequently, SuperFET II MOSFET easy-drive series offers  
slightly slower rise and fall times compared to the SuperFET II  
MOSFET series. Noted by the “E” part number suffix, this family  
helps manage EMI issues and allows for easier design  
implementation. For faster switching in applications where  
switching losses must be at an absolute minimum, please  
consider the SuperFET II MOSFET series.  
Typ. RDS(on) = 132 mΩ  
Ultra Low Gate Charge (Typ. Qg = 57 nC)  
Low Effective Output Capacitance (Typ. Coss(eff) = 204 pF)  
100% Avalanche Tested  
RoHS Compliant  
Applications  
Telecom / Sever Power Supplies  
Industrial Power Supplies  
D
G
D
G
S
TO-220  
S
Absolute Maximum Ratings TC = 25oC unless otherwise noted.  
Symbol  
VDSS  
Parameter  
FCP165N60E  
Unit  
Drain to Source Voltage  
Gate to Source Voltage  
600  
±20  
±30  
23  
V
- DC  
VGSS  
ID  
V
A
- AC  
(f > 1 Hz)  
- Continuous (TC = 25oC)  
- Continuous (TC = 100oC)  
- Pulsed  
Drain Current  
14  
IDM  
EAS  
IAR  
Drain Current  
(Note 1)  
(Note 2)  
(Note 1)  
(Note 1)  
69  
A
mJ  
A
Single Pulsed Avalanche Energy  
Avalanche Current  
525  
5
EAR  
Repetitive Avalanche Energy  
MOSFET dv/dt  
2.27  
100  
20  
mJ  
dv/dt  
PD  
V/ns  
Peak Diode Recovery dv/dt  
(Note 3)  
(TC = 25oC)  
- Derate Above 25oC  
227  
1.82  
-55 to +150  
300  
W
W/oC  
oC  
Power Dissipation  
TJ, TSTG  
TL  
Operating and Storage Temperature Range  
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds  
oC  
Thermal Characteristics  
Symbol  
Parameter  
Unit  
FCP165N60E  
RθJC  
RθJA  
Thermal Resistance, Junction to Case, Max.  
Thermal Resistance, Junction to Ambient, Max.  
0.55  
40  
oC/W  
www.fairchildsemi.com  
1
©2015 Fairchild Semiconductor Corporation  
FCP165N60E Rev. C0  
Package Marking and Ordering Information  
Part Number  
Top Mark  
Package  
Packing Method  
Reel Size  
Tape Width  
Quantity  
FCP165N60E  
FCP165N60E  
TO-220  
Tube  
N/A  
N/A  
50 units  
Electrical Characteristics TC = 25oC unless otherwise noted.  
Symbol  
Parameter  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
Off Characteristics  
V
GS = 0 V, ID = 10 mA, TJ = 25°C  
600  
650  
-
-
-
-
V
V
BVDSS  
Drain to Source Breakdown Voltage  
VGS = 0 V, ID = 10 mA, TJ = 150°C  
ΔBVDSS  
/ ΔTJ  
Breakdown Voltage Temperature  
Coefficient  
I
D = 10 mA, Referenced to 25oC  
DS = 600 V, VGS = 0 V  
-
0.7  
-
V/oC  
V
-
-
-
-
1.46  
-
1
-
IDSS  
IGSS  
Zero Gate Voltage Drain Current  
Gate to Body Leakage Current  
μA  
VDS = 480 V, VGS = 0 V,TC = 125oC  
VGS = ±20 V, VDS = 0 V  
±100  
nA  
On Characteristics  
VGS(th)  
RDS(on)  
gFS  
Gate Threshold Voltage  
VGS = VDS, ID = 250 μA  
VGS = 10 V, ID = 11.5 A  
VDS = 20 V, ID = 11.5 A  
2.5  
-
3.5  
165  
-
V
mΩ  
S
Static Drain to Source On Resistance  
Forward Transconductance  
-
-
132  
20  
Dynamic Characteristics  
Ciss  
Input Capacitance  
-
-
-
-
-
-
-
-
1830  
50  
2434  
pF  
pF  
pF  
pF  
nC  
nC  
nC  
Ω
VDS = 380 V, VGS = 0 V,  
f = 1 MHz  
Coss  
Crss  
Output Capacitance  
67  
-
Reverse Transfer Capacitance  
Effective Output Capacitance  
Total Gate Charge at 10V  
Gate to Source Gate Charge  
Gate to Drain “Miller” Charge  
Equivalent Series Resistance  
8.6  
204  
57  
Coss(eff.)  
Qg(tot)  
Qgs  
VDS = 0 V to 480 V, VGS = 0 V  
-
75  
-
V
V
DS = 380 V, ID = 11.5 A,  
GS = 10 V  
8.3  
24  
(Note 4)  
Qgd  
-
ESR  
f = 1 MHz  
6
-
Switching Characteristics  
td(on)  
tr  
td(off)  
tf  
Turn-On Delay Time  
Turn-On Rise Time  
Turn-Off Delay Time  
Turn-Off Fall Time  
-
-
-
-
22  
18  
55  
46  
ns  
ns  
ns  
ns  
VDD = 380 V, ID = 11.5 A,  
V
GS = 10 V, Rg = 4.7 Ω  
100  
18  
210  
47  
(Note 4)  
Drain-Source Diode Characteristics  
IS  
Maximum Continuous Drain to Source Diode Forward Current  
Maximum Pulsed Drain to Source Diode Forward Current  
-
-
-
-
-
-
-
23  
69  
1.2  
-
A
A
ISM  
VSD  
trr  
Drain to Source Diode Forward Voltage  
Reverse Recovery Time  
VGS = 0 V, ISD = 11.5 A  
-
V
326  
5.3  
ns  
μC  
V
GS = 0 V, ISD = 11.5 A,  
dIF/dt = 100 A/μs  
Qrr  
Reverse Recovery Charge  
-
Notes:  
1. Repetitive rating: pulse width limited by maximum junction temperature.  
2. I = 5.0 A, R = 25 Ω, Starting T = 25°C  
AS  
G
J
3. I 11.5 A, di/dt 200 A/μs, V 380 V, Starting T = 25°C  
SD  
DD  
J
4. Essentially independent of operating temperature.  
©2015 Fairchild Semiconductor Corporation  
FCP165N60E Rev. C0  
www.fairchildsemi.com  
2
Typical Performance Characteristics  
Figure 1. On-Region Characteristics  
Figure 2. Transfer Characteristics  
100  
100  
VGS = 10.0V  
*Notes:  
1. VDS = 20V  
8.0V  
7.0V  
6.0V  
5.0V  
4.5V  
2. 250μs Pulse Test  
150oC  
10  
10  
25oC  
*Notes:  
1. 250μs Pulse Test  
2. TC = 25oC  
-55oC  
1
1
0.3  
2
3
4
5
6
7
1
10  
20  
VGS, Gate-Source Voltage[V]  
VDS, Drain-Source Voltage[V]  
Figure 3. On-Resistance Variation vs.  
Drain Current and Gate Voltage  
Figure 4. Body Diode Forward Voltage  
Variation vs. Source Current  
and Temperature  
0.4  
100  
*Note: TC = 25oC  
*Notes:  
1. VGS = 0V  
2. 250μs Pulse Test  
10  
0.3  
150oC  
1
VGS = 10V  
0.2  
25oC  
0.1  
VGS = 20V  
-55oC  
0.1  
0.01  
0.0  
0.001  
0.0  
0.3  
0.6  
0.9  
1.2  
1.5  
0
20  
40  
60  
80  
VSD, Body Diode Forward Voltage [V]  
ID, Drain Current [A]  
Figure 5. Capacitance Characteristics  
Figure 6. Gate Charge Characteristics  
10  
100000  
*Note: ID = 11.5A  
VDS = 120V  
10000  
1000  
100  
10  
8
Ciss  
VDS = 300V  
6
Coss  
VDS = 480V  
4
*Note:  
1. VGS = 0V  
2. f = 1MHz  
Crss  
2
0
C
C
C
= C + C (C = shorted)  
gs gd ds  
iss  
1
= C + C  
ds gd  
= C  
gd  
oss  
rss  
0.1  
0
12  
24  
36  
48  
60  
0.1  
1
10  
100  
600  
Qg, Total Gate Charge [nC]  
VDS, Drain-Source Voltage [V]  
©2015 Fairchild Semiconductor Corporation  
FCP165N60E Rev. C0  
www.fairchildsemi.com  
3
Typical Performance Characteristics (Continued)  
Figure 7. Breakdown Voltage Variation  
vs. Temperature  
Figure 8. On-Resistance Variation  
vs. Temperature  
2.5  
1.2  
*Notes:  
1. VGS = 10V  
*Notes:  
1. VGS = 0V  
2. ID = 11.5A  
2.0  
2. ID = 10mA  
1.1  
1.5  
1.0  
0.5  
1.0  
0.9  
0.8  
-100  
-50  
0
50  
100  
150  
200  
-100  
-50  
0
50  
100  
150  
200  
TJ, Junction Temperature [oC]  
TJ, Junction Temperature [oC]  
Figure 9. Maximum Safe Operating Area  
Figure 10. Maximum Drain Current  
vs. Case Temperature  
25  
20  
15  
10  
5
100  
10μs  
100μs  
10  
1ms  
DC  
1
Operation in This Area  
is Limited by R DS(on)  
*Notes:  
TC = 25oC  
0.1  
TJ = 150oC  
RθJC = 0.55oC/W  
0.01  
0
25  
50  
75  
100  
125  
150  
1
10  
100  
1000  
TC, Case Temperature [oC]  
Figure 11. Eoss vs. Drain to Source Voltage  
12.0  
9.6  
7.2  
4.8  
2.4  
0
0
120  
240  
360  
480  
600  
VDS, Drain to Source Voltage [V]  
©2015 Fairchild Semiconductor Corporation  
FCP165N60E Rev. C0  
www.fairchildsemi.com  
4
Typical Performance Characteristics (Continued)  
Figure 12. Transient Thermal Response Curve  
1
0.5  
0.2  
0.1  
PDM  
0.1  
t1  
0.05  
t2  
*Notes:  
0.02  
0.01  
1. ZθJC(t) = 0.55oC/W Max.  
2. Duty Factor, D= t1/t2  
3. TJM - TC = PDM * ZθJC(t)  
Single pulse  
0.01  
0.005  
10-5  
10-4  
10-3  
10-2  
10-1  
1
10  
t1, Rectangular Pulse Duration [sec]  
©2015 Fairchild Semiconductor Corporation  
FCP165N60E Rev. C0  
5
www.fairchildsemi.com  
I
= const.  
G
Figure 13. Gate Charge Test Circuit & Waveform  
RL  
VDS  
90%  
VDS  
VDD  
VGS  
RG  
10%  
VGS  
DUT  
V
GS  
td(on)  
tr  
td(off)  
tf  
t on  
t off  
Figure 14. Resistive Switching Test Circuit & Waveforms  
VGS  
Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms  
©2015 Fairchild Semiconductor Corporation  
FCP165N60E Rev. C0  
www.fairchildsemi.com  
6
+
DUT  
VDS  
_
I SD  
L
Driver  
RG  
Same Type  
as DUT  
VDD  
VGS  
• dv/dt controlled by RG  
• ISD controlled by pulse period  
Gate Pulse Width  
--------------------------  
VGS  
D =  
Gate Pulse Period  
10V  
( Driver )  
IFM , Body Diode Forward Current  
I SD  
di/dt  
( DUT )  
IRM  
Body Diode Reverse Current  
Body Diode Recovery dv/dt  
VSD  
VDS  
( DUT )  
VDD  
Body Diode  
Forward Voltage Drop  
Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms  
©2015 Fairchild Semiconductor Corporation  
FCP165N60E Rev. C0  
www.fairchildsemi.com  
7
SUPPLIER "B" PACKAGE  
SHAPE  
‘ꢀꢁꢂꢂ  
3.50  
10.67  
9.65  
SUPPLIER "A" PACKAGE  
SHAPE  
E
3.40  
2.50  
16.30  
13.90  
IF PRESENT, SEE NOTE "D"  
E
16.51  
15.42  
9.40  
8.13  
E
1
2
3
4.10  
2.70  
[2.46]  
C
14.04  
12.70  
2.13  
2.06  
FRONT VIEWS  
H
4.70  
4.00  
1.62  
1.42  
1.62  
1.10  
2.67  
2.40  
"A1"  
8.65  
7.59  
1.00  
0.55  
SEE NOTE "F"  
ꢃƒ  
ꢄƒ  
ꢃƒ  
ꢄƒ  
6.69  
6.06  
OPTIONAL  
CHAMFER  
E
14.30  
11.50  
NOTE "I"  
BOTTOM VIEW  
NOTES:  
A) REFERENCE JEDEC, TO-220, VARIATION AB  
B) ALL DIMENSIONS ARE IN MILLIMETERS.  
C) DIMENSIONS COMMON TO ALL PACKAGE  
SUPPLIERS EXCEPT WHERE NOTED [ ].  
D) LOCATION OF MOLDED FEATURE MAY VARY  
(LOWER LEFT CORNER, LOWER CENTER  
AND CENTER OF THE PACKAGE)  
3
2
1
E DOES NOT COMPLY JEDEC STANDARD VALUE.  
F) "A1" DIMENSIONS AS BELOW:  
SINGLE GAUGE = 0.51 - 0.61  
DUAL GAUGE = 1.10 - 1.45  
G) DRAWING FILE NAME: TO220B03REV9  
H
PRESENCE IS SUPPLIER DEPENDENT  
I) SUPPLIER DEPENDENT MOLD LOCKING HOLES  
IN HEATSINK.  
0.60  
0.36  
2.85  
2.10  
BACK VIEW  
SIDE VIEW  
ON Semiconductor and  
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.  
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent  
coverage may be accessed at www.onsemi.com/site/pdf/PatentMarking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.  
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,  
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or  
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer  
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not  
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification  
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized  
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and  
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such  
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This  
literature is subject to all applicable copyright laws and is not for resale in any manner.  
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