FCP165N60E [ONSEMI]
N 沟道 SuperFET® II Easy-Drive MOSFET;
| 型号： | FCP165N60E |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道 SuperFET® II Easy-Drive MOSFET 局域网 开关 脉冲 晶体管 |
| 文件： | 总10页 (文件大小：802K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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December 2015
FCP165N60E
N-Channel SuperFET II Easy-Drive MOSFET
®
600 V, 23 A, 165 mΩ
Features
Description
•
•
•
•
•
•
650 V @TJ = 150°C
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new
high voltage super-junction (SJ) MOSFET family that is utilizing
charge balance technology for outstanding low on-resistance
and lower gate charge performance. This technology is tailored
to minimize conduction loss, provide superior switching
performance, dv/dt rate and higher avalanche energy.
Consequently, SuperFET II MOSFET easy-drive series offers
slightly slower rise and fall times compared to the SuperFET II
MOSFET series. Noted by the “E” part number suffix, this family
helps manage EMI issues and allows for easier design
implementation. For faster switching in applications where
switching losses must be at an absolute minimum, please
consider the SuperFET II MOSFET series.
Typ. RDS(on) = 132 mΩ
Ultra Low Gate Charge (Typ. Qg = 57 nC)
Low Effective Output Capacitance (Typ. Coss(eff) = 204 pF)
100% Avalanche Tested
RoHS Compliant
Applications
•
•
Telecom / Sever Power Supplies
Industrial Power Supplies
D
G
D
G
S
TO-220
S
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
Parameter
FCP165N60E
Unit
Drain to Source Voltage
Gate to Source Voltage
600
±20
±30
23
V
- DC
VGSS
ID
V
A
- AC
(f > 1 Hz)
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
Drain Current
14
IDM
EAS
IAR
Drain Current
(Note 1)
(Note 2)
(Note 1)
(Note 1)
69
A
mJ
A
Single Pulsed Avalanche Energy
Avalanche Current
525
5
EAR
Repetitive Avalanche Energy
MOSFET dv/dt
2.27
100
20
mJ
dv/dt
PD
V/ns
Peak Diode Recovery dv/dt
(Note 3)
(TC = 25oC)
- Derate Above 25oC
227
1.82
-55 to +150
300
W
W/oC
oC
Power Dissipation
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
oC
Thermal Characteristics
Symbol
Parameter
Unit
FCP165N60E
RθJC
RθJA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
0.55
40
oC/W
www.fairchildsemi.com
1
©2015 Fairchild Semiconductor Corporation
FCP165N60E Rev. C0
Package Marking and Ordering Information
Part Number
Top Mark
Package
Packing Method
Reel Size
Tape Width
Quantity
FCP165N60E
FCP165N60E
TO-220
Tube
N/A
N/A
50 units
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
V
GS = 0 V, ID = 10 mA, TJ = 25°C
600
650
-
-
-
-
V
V
BVDSS
Drain to Source Breakdown Voltage
VGS = 0 V, ID = 10 mA, TJ = 150°C
ΔBVDSS
/ ΔTJ
Breakdown Voltage Temperature
Coefficient
I
D = 10 mA, Referenced to 25oC
DS = 600 V, VGS = 0 V
-
0.7
-
V/oC
V
-
-
-
-
1.46
-
1
-
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
μA
VDS = 480 V, VGS = 0 V,TC = 125oC
VGS = ±20 V, VDS = 0 V
±100
nA
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
VGS = VDS, ID = 250 μA
VGS = 10 V, ID = 11.5 A
VDS = 20 V, ID = 11.5 A
2.5
-
3.5
165
-
V
mΩ
S
Static Drain to Source On Resistance
Forward Transconductance
-
-
132
20
Dynamic Characteristics
Ciss
Input Capacitance
-
-
-
-
-
-
-
-
1830
50
2434
pF
pF
pF
pF
nC
nC
nC
Ω
VDS = 380 V, VGS = 0 V,
f = 1 MHz
Coss
Crss
Output Capacitance
67
-
Reverse Transfer Capacitance
Effective Output Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance
8.6
204
57
Coss(eff.)
Qg(tot)
Qgs
VDS = 0 V to 480 V, VGS = 0 V
-
75
-
V
V
DS = 380 V, ID = 11.5 A,
GS = 10 V
8.3
24
(Note 4)
Qgd
-
ESR
f = 1 MHz
6
-
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
-
-
-
-
22
18
55
46
ns
ns
ns
ns
VDD = 380 V, ID = 11.5 A,
V
GS = 10 V, Rg = 4.7 Ω
100
18
210
47
(Note 4)
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
-
-
-
-
-
-
-
23
69
1.2
-
A
A
ISM
VSD
trr
Drain to Source Diode Forward Voltage
Reverse Recovery Time
VGS = 0 V, ISD = 11.5 A
-
V
326
5.3
ns
μC
V
GS = 0 V, ISD = 11.5 A,
dIF/dt = 100 A/μs
Qrr
Reverse Recovery Charge
-
Notes:
1. Repetitive rating: pulse width limited by maximum junction temperature.
2. I = 5.0 A, R = 25 Ω, Starting T = 25°C
AS
G
J
3. I ≤ 11.5 A, di/dt ≤ 200 A/μs, V ≤ 380 V, Starting T = 25°C
SD
DD
J
4. Essentially independent of operating temperature.
©2015 Fairchild Semiconductor Corporation
FCP165N60E Rev. C0
www.fairchildsemi.com
2
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
100
100
VGS = 10.0V
*Notes:
1. VDS = 20V
8.0V
7.0V
6.0V
5.0V
4.5V
2. 250μs Pulse Test
150oC
10
10
25oC
*Notes:
1. 250μs Pulse Test
2. TC = 25oC
-55oC
1
1
0.3
2
3
4
5
6
7
1
10
20
VGS, Gate-Source Voltage[V]
VDS, Drain-Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
0.4
100
*Note: TC = 25oC
*Notes:
1. VGS = 0V
2. 250μs Pulse Test
10
0.3
150oC
1
VGS = 10V
0.2
25oC
0.1
VGS = 20V
-55oC
0.1
0.01
0.0
0.001
0.0
0.3
0.6
0.9
1.2
1.5
0
20
40
60
80
VSD, Body Diode Forward Voltage [V]
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
10
100000
*Note: ID = 11.5A
VDS = 120V
10000
1000
100
10
8
Ciss
VDS = 300V
6
Coss
VDS = 480V
4
*Note:
1. VGS = 0V
2. f = 1MHz
Crss
2
0
C
C
C
= C + C (C = shorted)
gs gd ds
iss
1
= C + C
ds gd
= C
gd
oss
rss
0.1
0
12
24
36
48
60
0.1
1
10
100
600
Qg, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
©2015 Fairchild Semiconductor Corporation
FCP165N60E Rev. C0
www.fairchildsemi.com
3
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
2.5
1.2
*Notes:
1. VGS = 10V
*Notes:
1. VGS = 0V
2. ID = 11.5A
2.0
2. ID = 10mA
1.1
1.5
1.0
0.5
1.0
0.9
0.8
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
25
20
15
10
5
100
10μs
100μs
10
1ms
DC
1
Operation in This Area
is Limited by R DS(on)
*Notes:
TC = 25oC
0.1
TJ = 150oC
RθJC = 0.55oC/W
0.01
0
25
50
75
100
125
150
1
10
100
1000
TC, Case Temperature [oC]
Figure 11. Eoss vs. Drain to Source Voltage
12.0
9.6
7.2
4.8
2.4
0
0
120
240
360
480
600
VDS, Drain to Source Voltage [V]
©2015 Fairchild Semiconductor Corporation
FCP165N60E Rev. C0
www.fairchildsemi.com
4
Typical Performance Characteristics (Continued)
Figure 12. Transient Thermal Response Curve
1
0.5
0.2
0.1
PDM
0.1
t1
0.05
t2
*Notes:
0.02
0.01
1. ZθJC(t) = 0.55oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
Single pulse
0.01
0.005
10-5
10-4
10-3
10-2
10-1
1
10
t1, Rectangular Pulse Duration [sec]
©2015 Fairchild Semiconductor Corporation
FCP165N60E Rev. C0
5
www.fairchildsemi.com
I
= const.
G
Figure 13. Gate Charge Test Circuit & Waveform
RL
VDS
90%
VDS
VDD
VGS
RG
10%
VGS
DUT
V
GS
td(on)
tr
td(off)
tf
t on
t off
Figure 14. Resistive Switching Test Circuit & Waveforms
VGS
Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms
©2015 Fairchild Semiconductor Corporation
FCP165N60E Rev. C0
www.fairchildsemi.com
6
+
DUT
VDS
_
I SD
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I SD
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms
©2015 Fairchild Semiconductor Corporation
FCP165N60E Rev. C0
www.fairchildsemi.com
7
SUPPLIER "B" PACKAGE
SHAPE
ꢀꢁꢂꢂ
3.50
10.67
9.65
SUPPLIER "A" PACKAGE
SHAPE
E
3.40
2.50
16.30
13.90
IF PRESENT, SEE NOTE "D"
E
16.51
15.42
9.40
8.13
E
1
2
3
4.10
2.70
[2.46]
C
14.04
12.70
2.13
2.06
FRONT VIEWS
H
4.70
4.00
1.62
1.42
1.62
1.10
2.67
2.40
"A1"
8.65
7.59
1.00
0.55
SEE NOTE "F"
ꢃ
ꢄ
ꢃ
ꢄ
6.69
6.06
OPTIONAL
CHAMFER
E
14.30
11.50
NOTE "I"
BOTTOM VIEW
NOTES:
A) REFERENCE JEDEC, TO-220, VARIATION AB
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS COMMON TO ALL PACKAGE
SUPPLIERS EXCEPT WHERE NOTED [ ].
D) LOCATION OF MOLDED FEATURE MAY VARY
(LOWER LEFT CORNER, LOWER CENTER
AND CENTER OF THE PACKAGE)
3
2
1
E DOES NOT COMPLY JEDEC STANDARD VALUE.
F) "A1" DIMENSIONS AS BELOW:
SINGLE GAUGE = 0.51 - 0.61
DUAL GAUGE = 1.10 - 1.45
G) DRAWING FILE NAME: TO220B03REV9
H
PRESENCE IS SUPPLIER DEPENDENT
I) SUPPLIER DEPENDENT MOLD LOCKING HOLES
IN HEATSINK.
0.60
0.36
2.85
2.10
BACK VIEW
SIDE VIEW
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coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
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相关型号：
FCP165N65S3R0
Power MOSFET, N-Channel, SUPERFET® III, Easy Drive, 650 V, 19 A, 165 mΩ, TO-220
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