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FDB3632 [FAIRCHILD]

N-Channel PowerTrench MOSFET; N沟道PowerTrench MOSFET的
FDB3632
元器件型号： FDB3632
生产厂家： FAIRCHILD SEMICONDUCTOR    FAIRCHILD SEMICONDUCTOR
描述和应用：

N-Channel PowerTrench MOSFET
N沟道PowerTrench MOSFET的

晶体 晶体管 功率场效应晶体管 开关 PC
PDF文件： 总11页 (文件大小：302K)
下载文档：  下载PDF数据表文档文件
型号参数：FDB3632参数
 查看货源

FDB3632_12

 N-Channel PowerTrench® MOSFET 100V, 80A, 9mΩ

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23 FAIRCHILD

FDB3632_F085

 N-Channel PowerTrench® MOSFET 100V, 80A, 9mΩ

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19 FAIRCHILD

FDB3632_NL

 Power Field-Effect Transistor, 12A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263AB, 3 PIN

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0 FAIRCHILD

FDB3632_SB82115

 暂无描述

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0 FAIRCHILD

FDB3652

 rDS(ON) = 14m (Typ.), VGS = 10V, ID = 61A Qg(tot) = 41nC (Typ.), VGS = 10V

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37 TYSEMI

FDB3652

 N-Channel PowerTrench MOSFET 100V, 61A, 16mз

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134 FAIRCHILD

FDB3652_08

 N-Channel PowerTrench® MOSFET 100V, 61A, 16mΩ

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16 FAIRCHILD

FDB3652_F085

 Power Field-Effect Transistor, 9A I(D), 100V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT PACKAGE-3

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0 FAIRCHILD

FDB3652_NL

 Power Field-Effect Transistor, 9A I(D), 100V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE PACKAGE-3

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0 FAIRCHILD

FDB3672

 N-Channel PowerTrench MOSFET

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49 FAIRCHILD

FDB3672_09

 N-Channel PowerTrench® MOSFET 100V, 44A, 28mΩ

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17 FAIRCHILD

FDB3672_F085

 Power Field-Effect Transistor, 7.2A I(D), 100V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT PACKAGE-3

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0 FAIRCHILD

FDB3682

 rDS(ON) =32m (Typ.), VGS = 10V, ID =32A Qg(tot) = 18.5nC (Typ.), VGS = 10V

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22 TYSEMI

FDB3682

 N-Channel PowerTrench MOSFET

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38 KEXIN

FDB3682

 N-Channel PowerTrench MOSFET 100V, 32A, 36mз

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96 FAIRCHILD
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