FDB6696 [FAIRCHILD]
Power Field-Effect Transistor, 52A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB;
| 型号： | FDB6696 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Power Field-Effect Transistor, 52A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB 开关 脉冲 晶体管 |
| 文件： | 总5页 (文件大小：68K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
January 2002
PRELIMINARY
FDP6696 / FDB6696
N-Channel Logic Level PowerTrenchÒ MOSFET
General Description
Features
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low RDS(ON) and fast switching speed.
· 52 A, 30 V
RDS(ON) = 10 mW @ VGS = 10 V
RDS(ON) = 12.5 mW @ VGS = 4.5 V
· Critical DC electrical parameters specified at
elevated temperature
Applications
· High performance trench technology for extremely
low RDS(ON)
· Synchronous rectifier
· DC/DC converter
· 175°C maximum junction temperature rating
D
D
G
G
G
S
TO-263AB
FDB Series
TO-220
FDP Series
D
S
S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
Parameter
Drain-Source Voltage
Ratings
Units
30
V
V
A
VGSS
ID
Gate-Source Voltage
± 16
Drain Current – Continuous
– Pulsed
(Note 1)
(Note 1)
52
150
PD
Total Power Dissipation @ TC = 25°C
58
W
W/°C
°C
Derate above 25°C
Operating and Storage Junction Temperature Range
0.4
TJ, TSTG
–65 to +175
Thermal Characteristics
RqJC
Thermal Resistance, Junction-to-Case
2.6
°C/W
°C/W
RqJA
Thermal Resistance, Junction-to-Ambient
62.5
Package Marking and Ordering Information
Device Marking
Device
FDB6696
FDP6696
Re el Size
Tape width
24mm
Quantity
FDB6696
13’’
800 units
45
FDP6696
Tube
n/a
Ó2002 Fairchild Semiconductor Corporation
FDP6696 Rev B(W)
Electrical Characteristics
TA= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Drain-Source Avalanche Ratings (Note 1)
WDSS
IAR
Single Pulse Drain-Source
Avalanche Energy
VDD = 15 V, ID = 13 A
165
13
mJ
A
Maximum Drain-Source Avalanche
Current
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage VGS = 0 V,
ID = 250 mA
30
V
Breakdown Voltage Temperature
22
DBVDSS
ID = 250 mA, Referenced to 25°C
mV/°C
Coefficient
DTJ
IDSS
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
VDS = 24 V, VGS = 0 V
VGS = 16 V, VDS = 0 V
VGS = –16 V VDS = 0 V
10
mA
nA
nA
IGSSF
IGSSR
100
–100
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS
,
ID = 250 mA
1
1.9
3
V
Gate Threshold Voltage
Temperature Coefficient
–5.4
DVGS(th)
DTJ
ID = 250 mA, Referenced to 25°C
mV/°C
RDS(on)
Static Drain–Source On–
Resistance
VGS = 10 V,
VGS = 4.5 V, ID = 24 A
VGS= 10 V, ID = 26 A, TJ=125°C
ID = 26 A
7.7
9.5
10.8
10
12.5
15
mW
ID(on)
gFS
On–State Drain Current
VGS = 10 V,
VDS = 10V,
VDS = 5 V
ID = 26 A
60
A
S
Forward Transconductance
84
Dynamic Characteristics
C
Input Capacitance
1510
394
pF
pF
iss
VDS = 15 V,
f = 1.0 MHz
V GS = 0 V,
Coss
Output Capacitance
C
rss
Reverse Transfer Capacitance
141
pF
Switching Characteristics (Note 2)
VDD = 15 V,
VGS = 4.5 V, RGEN = 6 W
ID = 1 A,
td(on)
tr
td(off)
tf
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
11
10
32
13
15
4
34
32
96
48
20
ns
ns
ns
ns
VDS = 15 V,
VGS = 5 V
ID = 26 A,
Qg
nC
nC
nC
Qgs
Qgd
5
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
52
1.3
A
V
Drain–Source Diode Forward
Voltage
VGS = 0 V,
IS = 26 A (Note 1)
0.9
VSD
trr
Diode Reverse Recovery Time
IF = 26 A,
diF/dt = 100 A/µs
29
68
nS
nC
Qrr
Diode Reverse Recovery Charge
Notes:
1. Pulse Test: Pulse Width < 300ms, Duty Cycle < 2.0%
FDP6696 Rev B(W)
Typical Characteristics
2
1.8
1.6
1.4
1.2
1
120
VGS = 10V
5.0V
6.0V
4.5V
VGS = 3.5V
4.0V
90
60
30
0
4.0V
3.5V
4.5V
5.0V
6.0V
10V
3.0V
0.8
0
30
60
ID, DRAIN CURRENT (A)
90
120
0
1
2
3
4
5
VDS , DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.8
1.6
1.4
1.2
1
0.024
ID = 26A
ID = 26A
VGS =10V
0.019
0.014
0.009
0.004
TA = 125oC
TA = 25oC
0.8
0.6
2
4
6
8
10
-50
-25
0
25
50
75
100
125
150
175
VGS, GATE TO SOURCE VOLTAGE (V)
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
80
VGS = 0V
VDS = 10V
10
1
TA = 125oC
60
25oC
40
-55oC
TA = 125oC
20
0.1
0.01
25o
-55oC
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.5
2
2.5
3
3.5
4
VSD, BODY DIODE FORWARD VOLTAGE (V)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDP6696 Rev B(W)
Typical Characteristics
2000
1500
1000
500
0
10
VDS = 10V
f = 1MHz
VGS = 0 V
ID = 26A
15V
CISS
8
6
4
2
0
20V
COSS
CRSS
0
10
20
30
0
5
10
15
20
25
30
Qg, GATE CHARGE (nC)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
1000
2500
2000
1500
1000
500
SINGLE PULSE
RqJC = 2.6°C/W
TA = 25°C
10µs
100
10
1
RDS(ON) LIMIT
100µs
1ms
10ms
100ms
DC
VGS = 10V
SINGLE PULSE
Rq = 2.6oC/W
JC
TA = 25oC
0
0.01
0.1
1
10
100
1000
0.1
1
10
100
t1, TIME (sec)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RqJC(t) = r(t) * RqJC
RqJC = 2.6 °C/W
0.2
0.1
P(pk
0.1
0.05
t1
t2
0.02
TJ - Tc = P * RqJC(t)
0.01
Duty Cycle, D = t1 / t2
SINGLE PULSE
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
FDP6696 Rev B(W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
â
SMART START™
STAR*POWER™
Stealth™
VCX™
FAST
ACEx™
Bottomless™
CoolFET™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
FASTr™
FRFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
CROSSVOLT™
DenseTrench™
DOME™
POP™
Power247™
PowerTrenchâ
QFET™
EcoSPARK™
E2CMOSTM
TinyLogic™
QS™
EnSignaTM
TruTranslation™
UHC™
QT Optoelectronics™
Quiet Series™
SILENTSWITCHERâ
FACT™
FACT Quiet Series™
UltraFETâ
STAR*POWER is used under license
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NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITYARISING OUT OF THE APPLICATION OR USE OFANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICESORSYSTEMSWITHOUTTHEEXPRESSWRITTENAPPROVALOFFAIRCHILDSEMICONDUCTORCORPORATION.
As used herein:
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systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H4
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