FDB7030BL [ONSEMI]
N 沟道，PowerTrench® MOSFET，逻辑电平，30V，60A，9mΩ;
| 型号： | FDB7030BL |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，PowerTrench® MOSFET，逻辑电平，30V，60A，9mΩ 开关 脉冲 晶体管 |
| 文件： | 总7页 (文件大小：229K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
October 2003
FDP7030BL/FDB7030BL
N-Channel Logic Level PowerTrenchÒ MOSFET
General Description
Features
This N-Channel Logic Level MOSFET has been
designed specifically to improve the overall efficiency of
DC/DC converters using either synchronous or
conventional switching PWM controllers.
·
·
·
·
60 A, 30 V
RDS(ON) = 9 mW @ VGS = 10 V
RDS(ON) = 12 mW @ VGS = 4.5 V
Critical DC electrical parameters specified at
elevated temperature
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
RDS(ON) specifications.
High performance trench technology for extremely
low RDS(ON)
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
175°C maximum junction temperature rating
It has been optimized for low gate charge, low RDS(ON)
and fast switching speed.
D
D
G
G
G
S
TO-263AB
FDB Series
TO-220
FDP Series
D
S
S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
Parameter
Drain-Source Voltage
Ratings
Units
30
V
V
A
VGSS
Gate-Source Voltage
± 20
ID
Drain Current – Continuous
– Pulsed
(Note 1)
(Note 1)
60
180
PD
60
W
W/°C
°C
Total Power Dissipation @ TC = 25°C
0.4
Derate above 25°C
Operating and Storage Junction Temperature Range
TJ, TSTG
–65 to +175
Thermal Characteristics
RqJC
Thermal Resistance, Junction-to-Case
2.5
°C/W
°C/W
RqJA
Thermal Resistance, Junction-to-Ambient
62.5
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
24mm
Quantity
FDB7030BL
FDB7030BL
FDP7030BL
13’’
800 units
45
FDP7030BL
Tube
n/a
FDP7030BL/FDB7030BL Rev D1(W)
Ó2003 Fairchild Semiconductor Corporation
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Drain-Source Avalanche Ratings (Note 1)
WDSS
IAR
Single Pulse Drain-Source
Avalanche Energy
VDD = 15 V,
ID = 60 A
73
60
mJ
A
Maximum Drain-Source Avalanche
Current
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
30
V
VGS = 0 V,
ID = 250 mA
DBVDSS
DTJ
Breakdown Voltage Temperature
Coefficient
ID = 250 mA, Referenced to 25°C
mV/°C
22
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate–Body Leakage
VDS = 24 V,
VGS = 0 V
1
mA
nA
VGS = ± 20 V, VDS = 0 V
± 100
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
1
1.9
–5
3
V
VDS = VGS
,
ID = 250 mA
DVGS(th)
DTJ
Gate Threshold Voltage
Temperature Coefficient
ID = 250 mA, Referenced to 25°C
mV/°C
RDS(on)
Static Drain–Source On–
Resistance
VGS = 10 V,
VGS = 4.5 V,
VGS= 10 V, ID = 30 A, TJ=125°C
ID = 30 A
ID = 25 A
6.8
8.5
10.1
9
12
18
mW
ID(on)
gFS
On–State Drain Current
VGS = 10 V,
VDS = 10V,
VDS = 10 V
ID = 30 A
30
A
S
Forward Transconductance
85
Dynamic Characteristics
Ciss
Input Capacitance
1760
440
pF
pF
VDS = 15 V,
f = 1.0 MHz
V GS = 0 V,
Coss
Output Capacitance
Crss
RG
Reverse Transfer Capacitance
Gate Resistance
185
1.2
pF
VGS = 15 mV, f = 1.0 MHz
W
Switching Characteristics (Note 2)
td(on)
tr
td(off)
tf
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
VDD = 15V,
VGS = 10 V,
ID = 1 A,
RGEN = 6 W
12
12
30
19
17
5.4
6.4
22
22
48
33
24
ns
ns
ns
ns
VDS = 15 V,
VGS = 5 V
ID = 30 A,
Qg
Qgs
Qgd
nC
nC
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
60
A
V
Drain–Source Diode Forward
VGS = 0 V, IS = 30 A
Voltage
VSD
(Note 1)
0.92
1.3
trr
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
IF = 30 A,
diF/dt = 100 A/µs
30
20
nS
nC
Qrr
Notes:
1. Pulse Test: Pulse Width < 300ms, Duty Cycle < 2.0%
FDP7030BL/FDB7030BL Rev D1(W)
Typical Characteristics
180
1.8
1.6
1.4
1.2
1
VGS=10V
6.0V
VGS = 3.5V
150
4.5V
120
90
60
30
0
4.0V
4.0V
4.5V
5.0V
3.5V
6.0V
10V
3.0V
0.8
0
20
40
60
80
100
0
1
2
3
4
5
ID, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
1.4
1.2
1
0.030
ID = 30A
VGS =10V
ID = 30A
0.025
0.020
0.015
0.010
0.005
TA = 125oC
0.8
0.6
TA = 25oC
-50
-25
0
25
50
75
100
125
150
175
2
4
6
8
10
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
90
1000
VDS = 5V
VGS = 0V
75
60
45
30
15
0
100
10
TA = 125oC
1
25oC
TA = 125oC
-55oC
0.1
-55oC
25oC
0.01
0.001
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.5
2
2.5
3
3.5
4
4.5
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDP7030BL/FDB7030BL Rev D1(W)
Typical Characteristics
10
2500
2000
1500
1000
500
f = 1MHz
VGS = 0 V
VDS = 10V
ID = 30A
20V
8
6
4
2
0
Ciss
15V
Coss
Crss
0
0
5
10
15
20
25
30
0
5
10
15
20
25
30
35
Qg, GATE CHARGE (nC)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
5000
4000
3000
2000
1000
0
1000
SINGLE PULSE
RqJC = 2.5°C/W
TA = 25°C
10µs
100µs
1mS
10mS
100m
RDS(ON) LIMIT
100
10
1
DC
VGS = 10V
SINGLE PULSE
R
qJC = 2.5oC/W
TA = 25oC
0.1
1
10
100
0.00001
0.0001
0.001
0.01
0.1
1
VDS, DRAIN-SOURCE VOLTAGE (V)
t1, TIME (sec)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RqJC(t) = r(t) * RqJC
RqJC = 2.5 °C/W
0.2
P(pk
0.1
0.1
t1
t2
0.05
0.02
0.01
TJ - TA = P * RqJC(t)
Duty Cycle, D = t1 / t2
SINGLE PULSE
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
FDP7030BL/FDB7030BL Rev D1(W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Power247™
PowerTrench
QFET
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic
LittleFET™
MICROCOUPLER™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
MSXPro™
OCX™
OCXPro™
OPTOLOGIC
OPTOPLANAR™
PACMAN™
POP™
FACT Quiet Series™
FAST
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
ActiveArray™
Bottomless™
CoolFET™
CROSSVOLT™
DOME™
EcoSPARK™
E2CMOSTM
EnSignaTM
FACT™
QS™
QT Optoelectronics™ TINYOPTO™
Quiet Series™
RapidConfigure™
RapidConnect™
TruTranslation™
UHC™
UltraFET
HiSeC™
I2C™
SILENT SWITCHER VCX™
SMART START™
SPM™
ImpliedDisconnect™
ISOPLANAR™
Across the board. Around the world.™
The Power Franchise™
ProgrammableActive Droop™
Stealth™
SuperSOT™-3
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reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I5
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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