FDB7030L [FAIRCHILD]
N-Channel Logic Level Enhancement Mode Field Effect Transistor; N沟道逻辑电平增强模式场效应晶体管
| 型号： | FDB7030L |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| 文件： | 总4页 (文件大小：475K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
April 1998
FDP7030L / FDB7030L
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
Features
These N-Channel logic level enhancement mode power field
effect transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage
applications such as DC/DC converters and high efficiency
switching circuits where fast switching, low in-line power
loss, and resistance to transients are needed.
100 A, 30 V. RDS(ON) = 0.007 W @ VGS=10 V
RDS(ON) = 0.010 W @ VGS=5 V.
Critical DC electrical parameters specified at elevated
temperature.
Rugged internal source-drain diode can eliminate the need
for an external Zener diode transient suppressor.
High density cell design for extremely low RDS(ON)
.
175°C maximum junction temperature rating.
_________________________________________________________________________________
D
G
S
Absolute Maximum Ratings
Symbol Parameter
TC = 25°C unless otherwise noted
FDP7030L
FDB7030L
Units
VDSS
VGSS
ID
Drain-Source Voltage
30
V
V
A
Gate-Source Voltage - Continuous
Drain Current - Continuous
±20
(Note 1)
(Note 1)
100
75
- Pulsed
300
PD
Total Power Dissipation @ TC = 25°C
Derate above 25°C
125
W
W/°C
°C
0.83
Operating and Storage Temperature Range
-65 to 175
TJ,TSTG
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
275
°C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
1.2
°C/W
°C/W
RqJC
R
62.5
JA
q
© 1998 Fairchild Semiconductor Corporation
FDP7030L Rev.D1
Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
DRAIN-SOURCE AVALANCHE RATINGS (Note 1)
WDSS
IAR
Single Pulse Drain-Source Avalanche Energy
Maximum Drain-Source Avalanche Current
VDD = 15 V, ID = 38 A
200
38
mJ
A
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
30
V
BVDSS
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25 oC
mV/oC
Breakdown Voltage Temp. Coefficient
Zero Gate Voltage Drain Current
36
DBVDSS/DTJ
10
1
µA
mA
nA
nA
IDSS
VDS = 24 V, VGS = 0 V
TJ =125 °C
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
100
-100
IGSSF
IGSSR
VGS = 20 V, VDS = 0 V
VGS = -20 V, VDS = 0 V
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
1
1.5
-5
2
V
VGS(th)
VDS = VGS, ID = 250 µA
ID = 250 µA, Referenced to 25 oC
Gate Threshold Voltage Temp.Coefficient
mV/oC
DVGS(th)/DTJ
RDS(ON)
Static Drain-Source On-Resistance
VGS = 10 V, ID = 50 A
0.006 0.007
0.009 0.011
W
TJ = 125°C
0.009
0.01
VGS = 5 V, ID = 40 A
VGS = 10 V, VDS = 10 V
VDS = 10 V, ID = 50 A
ID(on)
gFS
On-State Drain Current
60
A
S
Forward Transconductance
50
DYNAMIC CHARACTERISTICS
Input Capacitance
VDS = 15 V, VGS = 0 V,
f = 1.0 MHz
2150
1290
420
pF
pF
pF
Ciss
Coss
Crss
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 2)
Turn - On Delay Time
Turn - On Rise Time
10
20
nS
nS
tD(on)
VDD = 15 V, ID = 75 A,
VGS = 10 V, RGEN = 6 W
RGS = 10 W
160
225
tr
Turn - Off Delay Time
Turn - Off Fall Time
70
95
nS
nS
tD(off)
140
195
tf
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDS = 12 V
ID = 50 A, VGS= 4.5 V
35
12
18
50
nC
nC
nC
DRAIN-SOURCE DIODE CHARACTERISTICS
Maximum Continuos Drain-Source Diode Forward Current (Note 1)
100
300
1.3
A
A
V
IS
Maximum Pulsed Drain-Source Diode Forward Current
(Note 2)
ISM
VSD
Drain-Source Diode Forward Voltage
1
VGS = 0 V, IS = 50 A (Note 2)
0.85
1.1
TJ = 125°C
Notes
1. Calculated continuous current based on maximum allowable junction temperature. Actual maximum continuous current limited by package constraints to 75A.
2. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
FDP7030L Rev.D1
Typical Electrical Characteristics
3
2.5
2
100
V
= 10V
8.0
5.0
GS
V GS =3.5V
4.5
80
60
40
20
0
6.0
4.0
4.0
4.5
5.0
60
1.5
1
3.5
6.0
8.0
10.0
3.0
2
0.5
0
0.5
1
1.5
2.5
0
20
40
80
100
V
, DRAIN-SOURCE VOLTAGE (V)
DS
I
, DRAIN CURRENT (A)
D
Figure 2. On-Resistance Variation with
Drain Current and Gate
Voltage.
Figure 1. On-Region Characteristics.
0.025
0.02
0.015
0.01
0.005
0
1.6
ID =50A
ID = 50A
VGS = 10V
1.4
1.2
1
125°C
25°C
0.8
0.6
-50
-25
0
25
50
75
100
125
150
175
2
4
6
8
10
T
, JUNCTION TEMPERATURE (°C)
J
V
, GATE TO SOURCE VOLTAGE (V)
GS
Figure 3. On-Resistance Variation
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
with Temperature.
60
60
50
40
30
20
10
0
V
= 10V
V
GS
=0V
DS
10
1
T = 125°C
A
25°C
0.1
T = -55°C
A
-55°C
0.01
0.001
25
125°C
0.0001
1
1.5
2
2.5
3
3.5
4
4.5
5
0
0.2
V
0.4
0.6
0.8
1
1.2
1.4
V
, GATE TO SOURCE VOLTAGE (V)
GS
, BODY DIODE FORWARD VOLTAGE (V)
SD
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
Figure 5. Transfer Characteristics.
FDP7030L Rev.D1
Typical Electrical Characteristics (continued)
5000
10
I
= 50A
D
V
= 6.0V
DS
3000
2000
12V
8
6
4
2
0
C
iss
24V
C
oss
1000
500
C
rss
f = 1 MHz
VGS = 0V
200
0
20
40
, GATE CHARGE (nC)
60
80
1
2
5
10
20
30
Q
g
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
Figure 7. Gate Charge Characteristics.
8000
6000
4000
2000
0
500
300
SINGLE PULSE
Rq
=1.2° C/W
JC
100
50
TC = 25°C
20
10
5
VGS = 10V
SINGLE PULSE
RqJC= 1.2o C/W
TC = 25 °C
2
1
0.01
0.1
1
10
100
1000
0.1
0.5
1
5
10
30 50
V
, DRAIN-SOURCE VOLTAGE (V))
SINGLE PULSE TIME (ms)
DS
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power
Dissipation.
1
D = 0.5
0.5
0.3
0.2
0.2
R
(t) = r(t) * R
JC
q
JC
q
R
= 1.2 °C/W
JC
q
0.1
0.1
P(pk)
0.05
0.05
0.02
t
1
t
2
0.03
0.01
T
- T = P * R
(t)
JC
J
C
q
0.02
Duty Cycle, D = t /t
1
2
Single Pulse
0.01
0.01
0.05
0.1
0.5
1
5
10
50
100
500
1000
t
,TIME (ms)
1
Figure 11. Transient Thermal Response Curve.
FDP7030L Rev.D1
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