FDB7042LL86Z [FAIRCHILD]
Power Field-Effect Transistor, 50A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3;
| 型号： | FDB7042LL86Z |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Power Field-Effect Transistor, 50A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 开关 脉冲 晶体管 |
| 文件： | 总5页 (文件大小：96K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
April 2001
FDP7042L / FDB7042L
N-Channel Logic Level PowerTrench MOSFET
General Description
Features
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
“low side” synchronous rectifier operation, providing an
• 50 A, 30 V.
RDS(ON) = 9 mΩ @ VGS = 4.5 V
DS(ON) = 7.5 mΩ @ VGS = 10 V
R
• Critical DC electrical parameters specified at
extremely low RDS(ON)
.
elevated temperature
Applications
• High performance trench technology for extremely
low RDS(ON)
• Synchronous rectifier
• DC/DC converter
• 175°C maximum junction temperature rating
D
D
G
G
G
D
S
S
TO-263AB
FDB Series
TO-220
FDP Series
S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
Parameter
Drain-Source Voltage
Ratings
Units
30
V
V
A
VGSS
Gate-Source Voltage
± 12
50
ID
Drain Current – Continuous
– Pulsed
(Note 1)
(Note 1)
150
PD
83
W
W°C
°C
Total Power Dissipation @ TC = 25°C
0.48
Derate above 25°C
Operating and Storage Junction Temperature Range
TJ, TSTG
-65 to +175
Thermal Characteristics
RθJC
Thermal Resistance, Junction-to-Case
1.8
°C/W
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
62.5
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
24mm
Quantity
FDB7042L
FDB7042L
FDP7042L
13’’
800 units
45
FDP7042L
Tube
n/a
FDP7042L Rev C(W)
2000 Fairchild Semiconductor Corporation
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
30
V
VGS = 0 V, ID = 250 µA
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
24
ID = 250 µA, Referenced to 25°C
mV/°C
IDSS
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
VDS = 24 V,
VGS = 12 V,
VGS = –12 V
VGS = 0 V
VDS = 0 V
VDS = 0 V
1
µA
nA
nA
IGSSF
IGSSR
100
–100
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
0.8
60
1.2
2
V
VDS = VGS, ID = 250 µA
∆VGS(th)
∆TJ
Gate Threshold Voltage
Temperature Coefficient
ID = 250 µA, Referenced to 25°C
–4.1
mV/°C
RDS(on)
Static Drain–Source On–Resistance VGS = 4.5 V,
VGS = 10 V,
ID = 25A
ID = 25A
VGS= 4.5 V, ID =25A, TJ=125°C
6.2
5.5
9.6
9
7.5
16
mΩ
ID(on)
gFS
On–State Drain Current
VGS = 4.5 V,
VDS = 5V,
VDS = 10 V
ID = 25 A
A
S
Forward Transconductance
117
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
2418
549
pF
pF
pF
VDS = 15 V, V GS = 0 V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
243
Switching Characteristics (Note 2)
td(on)
tr
td(off)
tf
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
21
20
60
30
32
10
9
34
32
96
48
51
ns
ns
VDD = 15 V, ID = 1 A,
VGS = 4.5 V, RGEN = 6 Ω
ns
ns
Qg
Qgs
Qgd
nC
nC
nC
VDS = 15 V, ID = 50 A,
V
GS = 4.5 V
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
50
A
V
Drain–Source Diode Forward
VGS = 0 V, IS = 25 A
Voltage
VSD
(Note 2)
0.8
1.3
Notes:
1. Maximum continuous current is limited by the package.
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDP7042L Rev C(W)
Typical Characteristics
2
1.8
1.6
1.4
1.2
1
150
VGS = 4.5V
3.5V
4.0V
120
VGS = 2.5V
3.0V
90
3.0V
3.5V
60
30
0
4.0V
120
2.5V
4.5V
0.8
0
30
60
90
150
0
1
2
3
4
5
175
3
ID, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.025
2
ID =25A
ID = 25 A
1.8
VGS = 4.5V
0.02
0.015
0.01
0.005
0
1.6
1.4
1.2
1
TA = 125oC
0.8
0.6
0.4
TA = 25oC
-50
-25
0
25
50
75
100
125
150
2
2.5
3
3.5
4
4.5
5
TJ, JUNCTION TEMPERATURE (oC)
V
GS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation
withTemperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
80
60
40
20
0
VGS = 0V
VDS = 5V
10
1
TA = 125oC
25oC
-55oC
0.1
TA = 125oC
25oC
0.01
0.001
-55oC
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1
1.5
2
2.5
VSD, BODY DIODE FORWARD VOLTAGE (V)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDP7042L Rev C(W)
Typical Characteristics
5
6000
5000
4000
3000
2000
1000
0
ID = 50A
VDS = 5V
f = 1MHz
GS = 0 V
4
V
CISS
10V
15V
3
2
1
0
COSS
CRSS
0
5
10
15
20
25
30
35
0
6
12
18
24
30
Qg, GATE CHARGE (nC)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
1000
100
10
1000
SINGLE PULSE
RθJC = 1.8°C/W
TC = 25°C
800
600
400
200
0
µ
100
s
RDS(ON) LIMIT
1ms
10ms
100ms
DC
VGS = 4.5V
SINGLE PULSE
RθJC = 1.8oC/W
TC = 25oC
1
0.1
1
10
100
1
10
100
1000
VDS, DRAIN-SOURCE VOLTAGE (V)
t1, TIME (sec)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RθJC(t) = r(t) + Rθ
JC
0.2
RθJC = 1.8 °C/W
0.1
0.05
P(pk)
0.02
0.1
0.01
t1
t2
SINGLE PULSE
TJ - TC = P * RθJC(t)
Duty Cycle, D = t1 / t2
0.01
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDP7042L Rev C(W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
PACMAN™
POP™
PowerTrench
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER
SMART START™
Star* Power™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
FAST
FASTr™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
UltraFET
VCX™
EcoSPARK™
E2CMOSTM
EnSignaTM
FACT™
FACT Quiet Series™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TOANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOTASSUMEANY LIABILITYARISING OUT OF THEAPPLICATION OR USE OFANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUTTHE EXPRESS WRITTENAPPROVALOF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H1
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