FDD6644 [FAIRCHILD]
30V N-Channel PowerTrench MOSFET; 30V N沟道PowerTrench MOSFET的
| 型号： | FDD6644 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | 30V N-Channel PowerTrench MOSFET |
| 文件： | 总6页 (文件大小：87K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
April 2001
FDD6644/FDU6644
30V N-Channel PowerTrench MOSFET
General Description
Features
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low RDS(ON) and fast switching speed.
• 67 A, 30 V.
RDS(ON) = 8.5 mΩ @ VGS = 10 V
RDS(ON) = 10.5 mΩ @ VGS = 4.5 V
• High performance trench technology for extremely
low RDS(ON)
Applications
• Low gate charge (25 nC typical)
• DC/DC converter
• High power and current handling capability
D
D
G
I-PAK
(TO-251AA)
G
S
D-PAK
(TO-252)
G D S
S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
Parameter
Drain-Source Voltage
Ratings
Units
30
V
V
A
VGSS
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
±16
67
ID
(Note 1a)
100
PD
W
Maximum Power Dissipation
(Note 1)
(Note 1a)
(Note 1b)
68
3.8
1.6
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +175
°C
Thermal Characteristics
Thermal Resistance, Junction-to-Case
(Note 1)
2.2
96
RθJC
°C/W
°C/W
Thermal Resistance, Junction-to-Ambient
(Note 1b)
RθJA
Package Marking and Ordering Information
Device Marking
Device
FDD6644
FDU6644
Package
Reel Size
13’’
Tape width
Quantity
FDD6644
D-PAK (TO-252)
I-PAK (TO-251)
12mm
N/A
2500 units
75
FDU6644
Tube
FDD/FDU6644 Rev C(W)
2001 Fairchild Semiconductor Corporation
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Drain-Source Avalanche Ratings (Note 2)
WDSS
IAR
Drain-Source Avalanche Energy
Drain-Source Avalanche Current
Single Pulse, VDD = 15 V, ID=17A
240
17
mJ
A
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
30
V
VGS = 0 V, ID = 250 µA
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
27
ID = 250 µA, Referenced to 25°C
mV/°C
IDSS
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
VDS = 24 V, VGS = 0 V
VGS = 16 V, VDS = 0 V
VGS = –16 V, VDS = 0 V
1
µA
nA
nA
IGSSF
IGSSR
100
–100
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
1
1.5
–5
3
V
VDS = VGS, ID = 250 µA
∆VGS(th)
∆TJ
Gate Threshold Voltage
Temperature Coefficient
mV/°C
mΩ
ID = 250 µA, Referenced to 25°C
RDS(on)
Static Drain–Source
On–Resistance
VGS = 10 V, ID = 16 A
VGS = 4.5 V, ID = 15 A
VGS = 10 V, ID = 16.5A,TJ=125°C
6.5
7.5
10
8.5
10.5
13
ID(on)
gFS
On–State Drain Current
VGS = 10 V, VDS = 5 V
50
A
S
Forward Transconductance
VDS = 5 V,
ID = 16 A
74
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
3087
489
pF
pF
pF
VDS = 15 V, V GS = 0 V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
185
Switching Characteristics (Note 2)
V
DD = 15 V, ID = 1 A,
td(on)
tr
td(off)
tf
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
10
12
48
10
25
7.5
6.5
20
22
77
20
35
ns
ns
ns
ns
nC
VGS = 10 V, RGEN = 6 Ω
V
DS = 15 V, ID = 16 A,
Qg
Qgs
Qgd
VGS = 5 V
FDD/FDU6644 Rev C(W)
Electrical Characteristics (continued)
TA = 25°C unless otherwise noted
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
3.2
1.2
A
V
Drain–Source Diode Forward
VGS = 0 V, IS = 2.7 A
Voltage
VSD
(Note 2)
0.7
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a)
R
θJA = 40°C/W when mounted on a
b)
R
θJA = 96°C/W when mounted
1in2 pad of 2 oz copper
on a minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
PD
3. Maximum current is calculated as:
RDS(ON)
where PD is maximum power dissipation at TC = 25°C and RDS(on) is at TJ(max) and VGS = 10V. Package current limitation is 21A
FDD/FDU6644 Rev C(W)
Typical Characteristics
2
1.75
1.5
50
3.5V
VGS = 10V
6.0V
3.0V
40
30
20
10
0
VGS = 3.0V
4.5V
3.5V
4.0V
1.25
1
4.5V
6.0V
2.5V
10V
0.75
0
10
20
30
40
50
0
0.5
1
1.5
I
D, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.8
1.6
1.4
1.2
1
0.024
ID = 8 A
ID = 16A
GS = 10V
V
0.02
0.016
0.012
0.008
0.004
TA = 125oC
0.8
0.6
TA = 25oC
-50
-25
0
25
50
75
100
125
150
175
2
4
6
8
10
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
70
60
50
40
30
20
10
0
VGS = 0V
TA = -55oC
25oC
125oC
VDS = 5V
10
TA = 125oC
1
25oC
0.1
-55oC
0.01
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
1.5
2
2.5
3
3.5
VSD, BODY DIODE FORWARD VOLTAGE (V)
V
GS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDD/FDU6644 Rev C(W)
Typical Characteristics
10
4000
3500
3000
2500
2000
1500
1000
500
f = 1MHz
VGS = 0 V
ID = 16A
VDS = 5V
10V
CISS
8
6
4
2
0
15V
COSS
CRSS
0
0
10
20
30
40
50
0
5
10
15
20
25
30
Qg, GATE CHARGE (nC)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
80
70
60
50
40
30
20
10
0
100
100µs
SINGLE PULSE
RθJA = 96°C/W
TA = 25°C
1ms
10ms
100ms
RDS(ON) LIMIT
10
1
1s
10s
DC
VGS = 10V
SINGLE PULSE
RθJA = 96oC/W
0.1
0.01
T
A = 25oC
0.1
1
10
100
0.01
0.1
1
10
100
t1, TIME (sec)
V
DS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
R
θJA(t) = r(t) + RθJA
RθJA = 96 °C/W
0.2
0.1
0.1
0.01
0.05
P(pk)
0.02
0.01
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
SINGLE PULSE
0.01
0.001
0.0001
0.001
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b
Transient thermal response will change depending on the circuit board design.
FDD/FDU6644 Rev C(W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
PACMAN™
POP™
PowerTrench
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER
SMART START™
Star* Power™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
FAST
FASTr™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
UltraFET
VCX™
EcoSPARK™
E2CMOSTM
EnSignaTM
FACT™
FACT Quiet Series™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TOANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOTASSUMEANY LIABILITYARISING OUT OF THEAPPLICATION OR USE OFANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUTTHE EXPRESS WRITTENAPPROVALOF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H1
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