FDD7N60NZ_10 [FAIRCHILD]
N-Channel MOSFET 600V, 5.5A, 1.25ï; N沟道MOSFET 600V ， 5.5A ， 1.25ï ????
| 型号： | FDD7N60NZ_10 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | N-Channel MOSFET 600V, 5.5A, 1.25ï |
| 文件： | 总9页 (文件大小：263K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
December 2010
TM
UniFET-II
FDD7N60NZ / FDU7N60NZ
N-Channel MOSFET
600V, 5.5A, 1.25
Features
Description
•
•
•
•
•
•
RDS(on) = 1.05 ( Typ.)@ VGS = 10V, ID = 2.75A
Low Gate Charge ( Typ. 13nC)
Low Crss ( Typ. 7pF)
These N-Channel enhancement mode power field effect tran-
sistors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advance technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
cient switching mode power supplies and active power factor
correction.
Fast Switching
100% Avalanche Tested
Improved dv/dt Capability
•
•
ESD Improved Capability
RoHS Compliant
D
D
G
G
S
I-PAK
D-PAK
G
S
D
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol
VDSS
VGSS
Parameter
FDD7N60NZ/FDU7N60NZ Units
Drain to Source Voltage
Gate to Source Voltage
600
±25
V
V
-Continuous (TC = 25oC)
-Continuous (TC = 100oC)
- Pulsed
5.5
ID
Drain Current
A
3.3
IDM
Drain Current
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
22
A
mJ
A
EAS
IAR
Single Pulsed Avalanche Energy
Avalanche Current
347
5.5
EAR
dv/dt
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
12.5
10
mJ
V/ns
W
(TC = 25oC)
- Derate above 25oC
90
PD
Power Dissipation
0.7
W/oC
oC
TJ, TSTG
TL
Operating and Storage Temperature Range
-55 to +150
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
300
oC
Thermal Characteristics
Symbol
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Units
FDD7N60NZ/FDU7N60NZ
RJC
RJA
1.4
90
oC/W
©2010 Fairchild Semiconductor Corporation
FDD7N60NZ / FDU7N60NZ Rev. A
1
www.fairchildsemi.com
Package Marking and Ordering Information
Device Marking
FDD7N60NZ
FDU7N60NZ
Device
Package
D-PAK
I-PAK
Reel Size
380mm
-
Tape Width
Quantity
2500
FDD7N60NZ
FDU7N60NZ
16mm
-
70
Electrical Characteristics TC = 25oC unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250A, VGS = 0V, TJ = 25oC
600
-
-
-
-
V
BVDSS
TJ
Breakdown Voltage Temperature
Coefficient
I
D = 250A, Referenced to 25oC
0.6
V/oC
V
DS = 600V, VGS = 0V
-
-
-
-
50
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
A
A
VDS = 480V, TC = 125oC
-
100
±10
VGS = ±25V, VDS = 0V
-
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
VGS = VDS, ID = 250A
VGS = 10V, ID = 2.75A
VDS = 20V, ID = 2.75A
3.0
-
5.0
1.25
-
V
S
Static Drain to Source On Resistance
Forward Transconductance
-
1.05
7.3
(Note 4)
-
Dynamic Characteristics
Ciss
Input Capacitance
-
-
-
-
-
550
70
7
730
90
10
17
-
pF
pF
pF
nC
nC
VDS = 25V, VGS = 0V
f = 1MHz
Coss
Crss
Qg(tot)
Qgs
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
13
3
V
V
DS = 400V ID = 5.5A
GS = 10V
Qgd
Gate to Drain “Miller” Charge
-
5.6
-
nC
(Note 4, 5)
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
-
-
-
-
17.5
30
45
70
90
60
ns
ns
ns
ns
VDD = 250V, ID = 5.5A
GS = 10V, RG = 25
V
40
25
(Note 4, 5)
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
-
-
-
-
-
-
-
5.5
22
1.4
-
A
A
ISM
VSD
trr
Drain to Source Diode Forward Voltage
Reverse Recovery Time
VGS = 0V, ISD = 5.5A
-
V
250
1.4
ns
C
VGS = 0V, ISD = 5.5A
dIF/dt = 100A/s
(Note 4)
Qrr
Reverse Recovery Charge
-
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 23mH, I = 5.5A, V = 50V, R = 25, Starting T = 25C
AS
DD
G
J
3. I 5.5A, di/dt 200A/s, V BV
, Starting T = 25C
SD
DD
DSS
J
4. Pulse Test: Pulse width 300s, Dual Cycle 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
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FDD7N60NZ / FDU7N60NZ Rev. A
2
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
20
20
VGS = 15.0V
*Notes:
1. VDS = 20V
10.0V
10
10
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
2. 250s Pulse Test
150oC
25oC
-55oC
1
1
*Notes:
1. 250s Pulse Test
2. TC = 25oC
0.1
0.1
0.1
1
10
30
2
4
6
8
VDS, Drain-Source Voltage[V]
VGS, Gate-Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
Drain Current and Gate Voltage
100
2.0
1.5
1.0
0.5
10
150oC
VGS = 10V
25oC
VGS = 20V
1
*Notes:
1. VGS = 0V
*Note: TC = 25oC
2. 250s Pulse Test
0.1
0.0
0.5
1.0
1.5
0
3
6
9
12
VSD, Body Diode Forward Voltage [V]
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
1000
10
C
C
C
= C + C (C = shorted)
gs gd ds
iss
Coss
VDS = 120V
= C + C
ds gd
oss
rss
V
DS = 300V
= C
gd
800
600
400
200
0
8
6
4
2
0
VDS = 480V
Ciss
*Note:
1. VGS = 0V
2. f = 1MHz
Crss
*Note: ID = 5.5A
12
10-1
1
10
30
0
3
6
9
15
Qg, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
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FDD7N60NZ / FDU7N60NZ Rev. A
3
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
2.5
2.0
1.5
1.0
1.2
1.1
1.0
0.9
*Notes:
1. VGS = 0V
*Notes:
1. VGS = 10V
0.5
2. ID = 250A
2. ID = 2.75A
0.8
-100
0.0
-100
-50
0
50
100
150
200
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
Figure 9. Maximum Safe Operating Area
vs. Case Temperature
Figure 10. Maximum Drain Current
40
6
5
4
3
2
1
0
30s
10
100s
1ms
10ms
DC
1
Operation in This Area
is Limited by R DS(on)
0.1
*Notes:
1. TC = 25oC
2. TJ = 150oC
3. Single Pulse
0.01
1
10
100
1000
25
50
75
100
125
150
TC, Case Temperature [oC]
VDS, Drain-Source Voltage [V]
Figure 11. Transient Thermal Response Curve
2
1
0.5
0.2
0.1
PDM
0.1
t1
t2
0.05
0.02
0.01
*Notes:
1. ZJC(t) = 1.4oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZJC(t)
Single pulse
0.01
10-5
10-4
10-3
10-2
10-1
1
Rectangular Pulse Duration [sec]
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FDD7N60NZ / FDU7N60NZ Rev. A
4
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
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FDD7N60NZ / FDU7N60NZ Rev. A
5
Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
DUT
VDS
_
I SD
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I SD
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
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FDD7N60NZ / FDU7N60NZ Rev. A
6
Mechanical Dimensions
D-PAK
Dimensions in Millimeters
www.fairchildsemi.com
FDD7N60NZ / FDU7N60NZ Rev. A
7
Mechanical Dimensions
I-PAK
Dimensions in Millimeters
FDD7N60NZ / FDU7N60NZ Rev. A
8
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Full Production
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Not In Production
Rev. I48
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9
FDD7N60NZ / FDU7N60NZ Rev. A
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