FDMA2002NZ_08 [FAIRCHILD]
Dual N-Channel PowerTrench㈢ MOSFET; 双N沟道MOSFET PowerTrench㈢
| 型号： | FDMA2002NZ_08 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Dual N-Channel PowerTrench㈢ MOSFET |
| 文件： | 总6页 (文件大小：622K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
March 2008
t
tm
tm
FDMA2002NZ
Dual N-Channel PowerTrench® MOSFET
General Description
Features
• 2.9 A, 30 V RDS(ON) = 123 mΩ @ VGS = 4.5 V
RDS(ON) = 140 mΩ @ VGS = 3.0 V
This device is designed specifically as a single package
solution for dual switching requirements in cellular
handset and other ultra-portable applications. It
features two independent N-Channel MOSFETs with
low on-state resistance for minimum conduction losses.
The MicroFET 2x2 offers exceptional thermal
performance for its physical size and is well suited to
linear mode applications.
RDS(ON) = 163 mΩ @ VGS = 2.5 V
• Low profile – 0.8 mm maximum – in the new package
MicroFET 2x2 mm
• HBM ESD protection level = 1.8kV (Note 3)
• RoHS Compliant
PIN 1
S1 G1 D2
D1
S1
G1
D2
1
2
3
6
5
4
D1
D2
G2
S2
D1 G2 S2
MicroFET 2x2
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
Parameter
Ratings
Units
VDS
Drain-Source Voltage
Gate-Source Voltage
30
V
VGS
ID
V
±12
2.9
Drain Current – Continuous (TC = 25°C, VGS = 4.5V)
– Continuous (TC = 25°C, VGS = 2.5V)
– Pulsed
2.7
A
10
PD
Power Dissipation for Single Operation
Power Dissipation for Single Operation
Operating and Storage Temperature
(Note 1a)
(Note 1b)
1.5
W
0.65
TJ, TSTG
–55 to +150
°C
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1d)
83 (Single Operation)
193 (Single Operation)
68 (Dual Operation)
145 (Dual Operation)
RθJA
RθJA
RθJA
RθJA
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
°C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
002
FDMA2002NZ
7’’
8mm
3000 units
FDMA2002NZ Rev B2 (W)
©2008 Fairchild Semiconductor Corporation
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
30
V
VGS = 0 V,
ID = 250 µA
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250 µA, Referenced to 25°C
25
mV/°C
IDSS
Zero Gate Voltage Drain Current
Gate–Body Leakage Current
VDS = 24 V,
VGS = 0 V
1
µA
µA
IGSS
VGS = ± 12 V, VDS = 0 V
±10
On Characteristics
VGS(th)
Gate Threshold Voltage
0.4
1.0
–3
1.5
V
VDS = VGS
,
ID = 250 µA
∆VGS(th)
∆TJ
Gate Threshold Voltage
Temperature Coefficient
ID = 250 µA, Referenced to 25°C
mV/°C
VGS = 4.5V, ID = 2.9A
75
84
123
140
163
166
203
268
VGS = 3.0V, ID = 2.7A
VGS = 2.5V, ID = 2.5A
92
Static Drain–Source
On–Resistance
RDS(on)
mΩ
VGS = 4.5V, ID = 2.9A, TC = 85°C
VGS = 3.0V, ID = 2.7A, TC = 150°C
VGS = 2.5V, ID = 2.5A, TC = 150°C
95
138
150
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
190
30
220
40
pF
pF
pF
V
DS = 15 V,
V GS = 0 V,
Output Capacitance
f = 1.0 MHz
Reverse Transfer Capacitance
20
30
Switching Characteristics (Note 2)
VDD = 15 V,
VGS = 4.5 V,
ID = 1 A,
RGEN = 6 Ω
td(on)
tr
td(off)
tf
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
6
8
12
16
21
10
3.0
ns
ns
12
ns
2
ns
VDS = 15 V,
ID = 2.9 A,
Qg
Qgs
Qgd
2.4
0.35
0.75
nC
nC
nC
V
GS = 4.5 V
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
2.9
A
V
VSD
Drain–Source Diode Forward
Voltage
IS = 2.0 A
0.9
0.8
10
1.2
1.2
IS = 1.1 A
trr
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
IF = 2.9 A,
dIF/dt = 100 A/µs
ns
Qrr
2
nC
FDMA2002NZ Rev B2 (W)
Electrical Characteristics
TA = 25°C unless otherwise noted
Notes:
1. RθJA is determined with the device mounted on a 1 in2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθJA is
determined by the user's board design.
(a) RθJA = 83°C/W when mounted on a 1in2 pad of 2 oz copper, 1.5” x 1.5” x 0.062” thick PCB
(b) RθJA = 193°C/W when mounted on a minimum pad of 2 oz copper
(c) RθJA = 68°C/W when mounted on a 1in2 pad of 2 oz copper, 1.5” x 1.5” x 0.062” thick PCB
(d) RθJA = 145°C/W when mounted on a minimum pad of 2 oz copper
a) 83oC/W when
mounted on a
1in2 pad of
b) 193oC/W when
mounted on a
minimum pad of
2 oz copper
2 oz copper
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
3.The diode connected between the gate and source serves only protection against ESD. No gate overvoltage rating is implied.
FDMA2002NZ Rev B2 (W)
Typical Characteristics
1.8
1.6
1.4
1.2
1
10
2.5V
VGS = 4.5V
VGS = 2.0V
8
6
4
2
0
2.7V
2.9V
3.5V
2.0V
2.5V
2.7V
2.9V
3.5V
4.0V
4.5V
1.5V
0.8
0
0.5
1
1.5
2
2.5
3
0
2
4
6
8
10
V
DS, DRAIN-SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.24
0.2
1.8
1.6
1.4
1.2
1
ID = 2.9A
ID = 1.45A
VGS = 4.5V
0.16
0.12
0.08
0.04
TA = 125oC
TA = 25oC
0.8
0.6
-50
-25
0
25
50
75
100
125
150
0
2
4
6
8
10
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
8
100
VGS = 0V
TA = -55oC
VDS = 5V
125oC
10
25oC
1
0.1
6
4
TA = 125oC
0.01
25oC
2
-55oC
0.001
0.0001
0
0.5
1
1.5
2
2.5
3
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
V
GS, GATE TO SOURCE VOLTAGE (V)
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDMA2002NZ Rev B2 (W)
Dimensional Outline and Pad Layout
rev3
FDMA2002NZ Rev B2 (W)
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global
subsidianries, and is not intended to be an exhaustive list of all such trademarks.
ACEx®
FPS™
PDP-SPM™
The Power Franchise®
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
EcoSPARK®
EfficentMax™
F-PFS™
Power-SPM™
PowerTrench®
Programmable Active Droop™
QFET®
QS™
Quiet Series™
RapidConfigure™
FRFET®
Global Power ResourceSM
Green FPS™
Green FPS™ e-Series™
GTO™
TinyBoost™
TinyBuck™
TinyLogic®
TINYOPTO™
TinyPower™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
Saving our world 1mW at a time™ TinyPWM™
EZSWITCH™ *
SmartMax™
SMART START™
SPM®
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SuperMOS™
®
TinyWire™
µSerDes™
™
®
MicroPak™
Fairchild®
MillerDrive™
MotionMax™
Motion-SPM™
OPTOLOGIC®
UHC®
Ultra FRFET™
UniFET™
VCX™
Fairchild Semiconductor®
FACT Quiet Series™
FACT®
FAST®
OPTOPLANAR®
VisualMax™
®
FastvCore™
tm
FlashWriter®
*
* EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE
APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER
ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S
WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which,
(a) are intended for surgical implant into the body or (b)
support or sustain life, and (c) whose failure to perform when
properly used in accordance with instructions for use provided
in the labeling, can be reasonably expected to result in a
significant injury of the user.
2. A critical component in any component of a life support,
device, or system whose failure to perform can be reasonably
expected to cause the failure of the life support device or
system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice.
Advance Information
Formative or In Design
This datasheet contains preliminary data; supplementary data will be pub-
lished at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
Preliminary
First Production
This datasheet contains final specifications. Fairchild Semiconductor reserves
the right to make changes at any time without notice to improve the design.
No Identification Needed
Obsolete
Full Production
This datasheet contains specifications on a product that is discontinued by
Fairchild Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I34
FDMA2002NZ Rev B2 (W)
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