FDMA2002NZ [FAIRCHILD]
Dual N-Channel PowerTrench MOSFET; 双N沟道PowerTrench MOSFET
| 型号： | FDMA2002NZ |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Dual N-Channel PowerTrench MOSFET |
| 文件： | 总7页 (文件大小：127K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
May 2006
FDMA2002NZ
Dual N-Channel PowerTrench® MOSFET
General Description
Features
• 2.9 A, 30 V RDS(ON) = 123 mΩ @ VGS = 4.5 V
RDS(ON) = 140 mΩ @ VGS = 3.0 V
This device is designed specifically as a single package
solution for dual switching requirements in cellular
handset and other ultra-portable applications. It
features two independent N-Channel MOSFETs with
low on-state resistance for minimum conduction losses.
The MicroFET 2x2 offers exceptional thermal
performance for its physical size and is well suited to
linear mode applications.
RDS(ON) = 163 mΩ @ VGS = 2.5 V
• Low profile – 0.8 mm maximum – in the new package
MicroFET 2x2 mm
• RoHS Compliant
PIN 1
S1 G1 D2
D1
S1
G1
D2
1
2
3
6
5
4
D1
D2
G2
S2
D1 G2 S2
MicroFET 2x2
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
Parameter
Ratings
Units
VDS
Drain-Source Voltage
Gate-Source Voltage
30
V
VGS
ID
V
±12
2.9
Drain Current – Continuous (TC = 25°C, VGS = 4.5V)
– Continuous (TC = 25°C, VGS = 2.5V)
– Pulsed
2.7
A
10
PD
Power Dissipation for Single Operation
Power Dissipation for Single Operation
Operating and Storage Temperature
(Note 1a)
(Note 1b)
1.5
W
0.65
TJ, TSTG
–55 to +150
°C
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1d)
83 (Single Operation)
193 (Single Operation)
68 (Dual Operation)
145 (Dual Operation)
RθJA
RθJA
RθJA
RθJA
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
°C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
002
FDMA2002NZ
7’’
8mm
3000 units
FDMA2002NZ Rev B(W)
©2006 Fairchild Semiconductor Corporation
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
30
V
VGS = 0 V,
ID = 250 µA
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250 µA, Referenced to 25°C
25
mV/°C
IDSS
Zero Gate Voltage Drain Current
Gate–Body Leakage Current
VDS = 24 V,
VGS = 0 V
1
µA
µA
IGSS
VGS = ± 12 V, VDS = 0 V
±10
On Characteristics
VGS(th)
Gate Threshold Voltage
0.4
1.0
–3
1.5
V
VDS = VGS
,
ID = 250 µA
∆VGS(th)
∆TJ
Gate Threshold Voltage
Temperature Coefficient
ID = 250 µA, Referenced to 25°C
mV/°C
VGS = 4.5V, ID = 2.9A
75
84
123
140
163
166
203
268
VGS = 3.0V, ID = 2.7A
VGS = 2.5V, ID = 2.5A
92
Static Drain–Source
On–Resistance
RDS(on)
mΩ
VGS = 4.5V, ID = 2.9A, TC = 85°C
VGS = 3.0V, ID = 2.7A, TC = 150°C
95
138
150
V
GS = 2.5V, ID = 2.5A, TC = 150°C
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
190
30
220
40
pF
pF
pF
V
DS = 15 V,
V GS = 0 V,
Output Capacitance
f = 1.0 MHz
Reverse Transfer Capacitance
20
30
Switching Characteristics (Note 2)
VDD = 15 V,
VGS = 4.5 V,
ID = 1 A,
RGEN = 6 Ω
td(on)
tr
td(off)
tf
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
6
8
12
16
21
10
3.0
ns
ns
12
ns
2
ns
VDS = 15 V,
VGS = 4.5 V
ID = 2.9 A,
Qg
Qgs
Qgd
2.4
0.35
0.75
nC
nC
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
2.9
A
V
VSD
Drain–Source Diode Forward
Voltage
IS = 2.0 A
0.9
0.8
10
1.2
1.2
IS = 1.1 A
trr
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
IF = 2.9 A,
dIF/dt = 100 A/µs
ns
Qrr
2
nC
FDMA2002NZ Rev B(W)
Electrical Characteristics
TA = 25°C unless otherwise noted
Notes:
1. RθJA is determined with the device mounted on a 1 in2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθJA is
determined by the user's board design.
(a) RθJA = 83°C/W when mounted on a 1in2 pad of 2 oz copper, 1.5” x 1.5” x 0.062” thick PCB
(b) RθJA = 193°C/W when mounted on a minimum pad of 2 oz copper
(c) RθJA = 68°C/W when mounted on a 1in2 pad of 2 oz copper, 1.5” x 1.5” x 0.062” thick PCB
(d) RθJA = 145°C/W when mounted on a minimum pad of 2 oz copper
a) 83oC/W when
mounted on a
1in2 pad of
b) 193oC/W when
mounted on a
minimum pad of
2 oz copper
2 oz copper
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDMA2002NZ Rev B(W)
Typical Characteristics
1.8
1.6
1.4
1.2
1
10
2.5V
VGS = 4.5V
VGS = 2.0V
8
6
4
2
0
2.7V
2.9V
3.5V
2.0V
2.5V
2.7V
2.9V
3.5V
4.0V
4.5V
1.5V
0.8
0
0.5
1
1.5
2
2.5
3
0
2
4
6
8
10
V
DS, DRAIN-SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.24
0.2
1.8
1.6
1.4
1.2
1
ID = 2.9A
ID = 1.45A
VGS = 4.5V
0.16
0.12
0.08
0.04
TA = 125oC
TA = 25oC
0.8
0.6
-50
-25
0
25
50
75
100
125
150
0
2
V
4
6
8
10
TJ, JUNCTION TEMPERATURE (oC)
GS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
8
100
VGS = 0V
TA = -55oC
VDS = 5V
125oC
10
25oC
1
0.1
6
4
TA = 125oC
0.01
25oC
2
-55oC
0.001
0.0001
0
0.5
1
1.5
2
2.5
3
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
VGS, GATE TO SOURCE VOLTAGE (V)
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDMA2002NZ Rev B(W)
Typical Characteristics
300
250
200
150
100
50
10
f = 1MHz
VGS = 0 V
ID = 2.9A
8
VDS = 10V
20V
Ciss
6
15V
4
2
0
Coss
Crss
0
0
5
10
15
20
25
30
0
1
2
3
4
5
6
Qg, GATE CHARGE (nC)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
100
10
15
12
9
SINGLE PULSE
RθJA = 193°C/W
T
A = 25°C
100us
RDS(ON) LIMIT
1ms
10ms
100ms
1s
1
10s
DC
6
VGS = 4.5V
SINGLE PULSE
RθJA = 193oC/W
0.1
0.01
3
T
A = 25oC
0
0.0001
0.001
0.01
0.1
1
10
100
1000
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
t1, TIME (sec)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power
Dissipation.
1
D = 0.5
Rθ (t) = r(t) * Rθ
JA
JA
RθJA =193°C/W
0.2
P(pk)
0.1
0.1
0.05
t1
0.02
0.01
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
SINGLE PULSE
0.01
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDMA2002NZ Rev B(W)
FDMA2002NZ Rev B(W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
®
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Across the board. Around the world.™
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PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE
SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS,
SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I19
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